Presentations -
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Excitation dependence of surface recombination velocities for oxidized 4H-SiC
2022.12
Event date： 2022.12
Language：Japanese Presentation type：Poster presentation
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Angular detection for channeling ion implantation by optical techniques
2022.12
Event date： 2022.12
Language：Japanese Presentation type：Poster presentation
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Suppression of bipolar degradation by H+ injection into SiC PiN diodes
2022.12
Event date： 2022.12
Language：Japanese Presentation type：Poster presentation
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Difference in PL signals for GaN epilayers on HVPE and OVPE substrates
2022.12
Event date： 2022.12
Language：Japanese Presentation type：Poster presentation
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3D observation of dislocation SiC using a focused polarized laser
2022.12
Event date： 2022.12
Language：Japanese Presentation type：Poster presentation
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OTC-06 Observation of carrier lifetimes inside of SiC epilayers and devices Invited International conference
Masashi Kato
The 10th Asia-Pacific Workshop on Widegap Semiconductors 2022.11
Event date： 2022.11
Language：English Presentation type：Oral presentation (invited, special)
Venue：COZZI Blu, Taoyuan, Taiwan Country：Taiwan, Province of China
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[J-5-03] Auger recombination coefficient in 4H-SiC under the high injection condition International conference
Kazuhiro TANAKA, Keisuke NAGAYA , Masashi KATO
2022 International Conference on Solid State Devices and Materials 2022.09
Event date： 2022.09
Language：English Presentation type：Oral presentation (general)
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[C-4-03] Accurate estimation of surface recombination velocities for SrTiO3 using angle-lapped structures International conference
Masashi Kato, Yosuke Kato
2022 International Conference on Solid State Devices and Materials 2022.09
Event date： 2022.09
Language：English Presentation type：Oral presentation (general)
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20p-C306-6 酸化処理を施した4H-SiCの表面再結合速度
小川 斐士, 韓 磊, 加藤 智久, 加藤 正史
2022年 第83回応用物理学会秋春季学術講演会 2022.09
Event date： 2022.09
Language：Japanese Presentation type：Oral presentation (general)
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20p-C306-5 H+注入によるSiC PiNダイオード内積層欠陥拡張の抑制
渡邉 王雅, 三井 俊樹, 原田 俊太, 坂根 仁, 加藤 正史
2022年 第83回応用物理学会秋春季学術講演会 2022.09
Event date： 2022.09
Language：Japanese Presentation type：Oral presentation (general)
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20p-C306-4 プロトン注入によるSiCエピタキシャル層の 基底面部分転位の運動抑制
原田 俊太, 坂根 仁, 三井 俊樹, 加藤 正史
2022年 第83回応用物理学会秋春季学術講演会 2022.09
Event date： 2022.09
Language：Japanese Presentation type：Oral presentation (general)
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Th-1-B.1: Suppression of stacking fault expansion in SiC PiN diodes by H+ implantation International conference
Masashi Kato, Ohga Watanabe, Toshiki Mii, Hitoshi Sakane, Shunta Harada
19th The International Conference on Silicon Carbide and Related Materials
Event date： 2022.09
Language：English Presentation type：Oral presentation (general)
Venue：Davos, Switzerland
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Fr-2-A.1: Hole capture cross section of the Al acceptor level at finite temperature International conference
Masashi Kato, Jing Di, Yutaro Ohkouchi, Taisuke Mizuno, Masaya Ichimura, Kazutoshi Kojima
19th The International Conference on Silicon Carbide and Related Materials
Event date： 2022.09
Language：English Presentation type：Oral presentation (general)
Venue：Davos, Switzerland
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Th-1-B.4: Suppression of recombination enhanced dislocation glide motion in 4H-SiC by hydrogen ion implantation International conference
Shunta Harada, Toshiki Mii, Hitoshi Sakane, Masashi Kato
19th The International Conference on Silicon Carbide and Related Materials
Event date： 2022.09
Language：English Presentation type：Oral presentation (general)
Venue：Davos, Switzerland
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ThA1-3 Single Crystal Photocatalytic Oxides: Carrier Recombination and Solar-to-hydrogen Conversion Invited International conference
Masashi Kato
9th International Symposium on Control of Semiconductor Interfaces
Event date： 2022.09
Language：English Presentation type：Oral presentation (invited, special)
Venue：Nagoya University
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[Th2-2] Discussion on carrier lifetime control in a drift layer of 1.2 kV class 4H-SiC devices for suppression of bipolar degradation International conference
Toshiki Mii, Masashi Kato, Shunta Harada, Hitoshi Sakane
19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors
Event date： 2022.08 - 2022.09
Language：English Presentation type：Oral presentation (general)
Venue：Online
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22p-E106-8 局在表面プラズモン共鳴を有するTiO2におけるキャリア再結合
張 銘鑫、張 恩棟、加藤 正史
第69回応用物理学会春季学術講演会
Event date： 2022.03
Language：Japanese Presentation type：Oral presentation (general)
Venue：青山学院大学およびオンライン
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23p-E204-8 斜め研磨構造を利用したSrTiO3表面再結合速度の高精度評価
加藤遥介、加藤正史
第69回応用物理学会春季学術講演会
Event date： 2022.03
Language：Japanese Presentation type：Oral presentation (general)
Venue：青山学院大学およびオンライン
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Effects of defects created by ion implantation on SiC devices International conference
Masashi Kato
第4回材料科学フロンティア研究院国際シンポジウム ～材料科学における融合研究～ 名古屋工業大学 材料科学フロンティア研究院
Event date： 2022.03
Language：English Presentation type：Oral presentation (general)
Venue：名古屋工業大学およびオンライン
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Effects of point defects on SiC power devices Invited International conference
Masashi Kato
International Conference on Recent Advances in Materials and Radiation Measurements (RAMRAM-2022) SSN college of Engineering
Event date： 2022.02
Language：English Presentation type：Oral presentation (invited, special)
Venue：online
