Presentations -
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Optical and electrical characterization on GaN epilayers on HVPE and OVPE substrates
2023.12
Event date： 2023.11 - 2023.12
Language：Japanese Presentation type：Poster presentation
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3-dimensional observation of dislocations in 4H-SiC using focused light birefringence International conference
Masashi Kato, Hisaya Sato, Tomohisa Kato, Koichi Murata, Shunta Harada
International Conference on Silicon Carbide and Related Materials 2023 2023.09
Event date： 2023.09
Language：English Presentation type：Oral presentation (general)
Venue：Sorrent, Italy
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Excited carrier concentration dependence of surface recombination velocities for 4H-SiC with and without passivation International conference
Masashi Kato, Ayato Ogawa, Lei Han and Tomohisa Kato
International Conference on Silicon Carbide and Related Materials 2023 2023.09
Event date： 2023.09
Language：English Presentation type：Poster presentation
Venue：Sorrent, Italy
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High-energy ion channeling for deep implantation of Al into 4H-SiC International coauthorship International conference
Manuel Belanche Guadas, Yoshiyuki Yonezawa, Inés Martí Hidalgo, René Heller, Corinna Martinella, Constantin Csato, Michael Rüb, Masashi Kato, Koichi Murata, Hidekazu Tsuchida, Tsunenobu Kimoto, Ulrike Grossner
International Conference on Silicon Carbide and Related Materials 2023 2023.09
Event date： 2023.09
Language：English Presentation type：Oral presentation (general)
Venue：Sorrent, Italy
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Observation of the c-axis direction in 4H-SiC for channeling ion implantation by the optical method International conference
Masashi Kato, Takumi Maruhashi, Hisaya Sato and Yoshiyuki Yonezawa
International Conference on Silicon Carbide and Related Materials 2023 2023.09
Event date： 2023.09
Language：English Presentation type：Oral presentation (general)
Venue：Sorrent, Italy
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Advances in Suppressing Bipolar Degradation in SiC Devices: Carrier Lifetime Control and Proton Implantation Invited International conference
Masashi Kato, Shunta Harada, Hitoshi Sakane
International Conference on Silicon Carbide and Related Materials 2023 2023.09
Event date： 2023.09
Language：English Presentation type：Oral presentation (invited, special)
Venue：Sorrent, Italy
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[C-2-01] Mitigation of Carrier Trapping Effects on Carrier Lifetime Measurements with Continuous-Wave Laser Illumination for Metal Halide Perovskite Materials International coauthorship International conference
NTUMBA LOBO, Gebhard Josef Matt, Andres Osvet, Shreetu Shrestha, Levchuk Ievgen, Andrii Kanak, Petro Fochuk, Christoph J Brabec, Masashi Kato
2023 International Conference on Solid State Devices and Materials 2023.09 JSAP
Event date： 2023.09
Language：English Presentation type：Oral presentation (general)
Venue：Nagoya Congress center
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[G-4-05] Photoelectrical Characterization of Heavily-doped p-SiC Schottky Contacts International conference
Hiroki Imabayashi, Hitose Sawazaki, Haruto Yoshimura, Masashi Kato, Kenji Shiojima
2023.09 JSAP
Event date： 2023.09
Language：English Presentation type：Oral presentation (general)
Venue：Nagoya Congress center
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[N-2-01 (Invited)] Proton implantation: the last resort to solve bipolar degradation of SiC power devices? Invited International conference
Masashi Kato, Shunta Harada, Hitoshi Sakane
2023 International Conference on Solid State Devices and Materials 2023.09 JSAP
Event date： 2023.09
Language：English Presentation type：Oral presentation (invited, special)
Venue：Nagoya Congress center
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[PS-4-04] Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC International conference
Kazuhiro TANAKA, Masashi KATO
2023 International Conference on Solid State Devices and Materials 2023.09 JSAP
Event date： 2023.09
Language：English Presentation type：Poster presentation
Venue：Nagoya Congress center
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[PS-6-07] Analysis of defects dominating carrier recombination in CeO2 single crystal for photocatalytic applications International coauthorship International conference
Endong Zhang, Masashi KATO
2023 International Conference on Solid State Devices and Materials 2023.09 JSAP
Event date： 2023.09
Language：English Presentation type：Poster presentation
Venue：Nagoya Congress center
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3C-SiC 光触媒による高耐久・高効率水素生成と将来展望 Invited
加藤 正史
公益社団法人 応用物理学会 先進パワー半導体分科会 第２５回研究会「ワイドギャップ半導体の新たな応用」 2023.09
Event date： 2023.09
Language：Japanese Presentation type：Oral presentation (invited, special)
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Effects of polishing on carrier recombination in TiO2 and SrTiO3 single crystals Invited International conference
Masashi Kato
E-MRS 2023 Spring Meeting 2023.05
Event date： 2023.05 - 2023.06
Language：English Presentation type：Oral presentation (invited, special)
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[15a-A301-5] 集光した偏光レーザーを用いたSiC内部の転位の3次元観測
佐藤 寿弥、加藤 智久、原田 俊太、加藤 正史
2023年第70回応用物理学会春季学術講演会 2023.03
Event date： 2023.03
Language：Japanese Presentation type：Oral presentation (general)
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[17p-A301-2] HVPE 基板および OVPE 基板上 GaN エピ層に対する TR-PL 信号の相違
石井 達也、宇佐美 茂佳、森 勇介、渡邉 浩崇、新田 州吾、本田 善央、天野 浩、加藤 正史
2023年第70回応用物理学会春季学術講演会 2023.03
Event date： 2023.03
Language：Japanese Presentation type：Oral presentation (general)
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[16p-A301-10] 偏光を用いたチャネリングイオン注入の角度検出
丸橋 拓実、佐藤 寿弥、米澤 喜幸、加藤 正史
2023年第70回応用物理学会春季学術講演会 2023.03
Event date： 2023.03
Language：Japanese Presentation type：Oral presentation (general)
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[16p-PA04-1] 界面顕微光応答法によるAu/Ni/p+-SiCショットキー接触の二次元評価
今林 弘毅、澤崎 仁施、吉村 遥翔、伊藤 夏輝、加藤 正史、塩島 謙次
2023年第70回応用物理学会春季学術講演会 2023.03
Event date： 2023.03
Language：Japanese Presentation type：Poster presentation
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[17a-A408-4] TiO2およびSrTiO3単結晶のキャリア再結合に表面研磨処理が及ぼす影響
張 銘鑫、張 恩棟、加藤 正史
2023年第70回応用物理学会春季学術講演会 2023.03
Event date： 2023.03
Language：Japanese Presentation type：Oral presentation (general)
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SiCパワーデバイスへの水素イオン注入と転位運動抑制
加藤 正史
日本学術振興会 R032産業イノベーションのための結晶成長委員会 11回研究会「パワー関連半導体の将来展望」 2023.03 日本学術振興会 R032産業イノベーションのための結晶成長委員会
Event date： 2023.03
Language：Japanese Presentation type：Oral presentation (invited, special)
Venue：ZoomによるWEB研究会(ハイブリッド開催), 東京大学生産技術研究所An棟401,402会議室
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SiC epi / sub 界面付近へのプロトン注入による信頼性向上技術 Invited
加藤正史
SiCアライアンス技術・普及WG第6回会議 2023.02
Event date： 2023.02
Language：Japanese Presentation type：Oral presentation (invited, special)
