Papers - ICHIMURA Masaya

Deposition of Amorphous SexTe1-x Thin Film Alloys by a Novel Photochemical Deposition Technique and Their Analysis

R. Kumaresan, M. Ichimura, N. Sato, P. Ramasamy, and E. Arai

J. Electrochem. Soc.   149 ( 9 )   C464 - C468   2002.04

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Application of Novel Photochemical Deposition Technique for the Deposition of Indium Sulfide Reviewed

R. Kumaresan, M. Ichimura, N. Sato, P. Ramasamy

Mater. Sci. Eng. B   96 ( 7 )   37 - 42   2002.04

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Photochemical Deposition of ZnSe Polycrystalline Thin Films and Their Characterization Reviewed

R. Kumaresan, M. Ichimura and E. Arai

Thin Solid Films   414 ( 7 )   25 - 30   2002.04

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Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality Reviewed

H. Uchida, M. Ichimura and E. Arai

Jpn. J. Appl. Phys.   41 ( 7 )   4436 - 4441   2002.04

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Bulk Carrier Lifetime Measurement by the Microwave Reflectance Photochonductivity Decay Method with External Surface Electric Field Reviewed

M. Ichimura, A. Tada, E. Arai, H. Takamatsu, S. Sumie

Appl. Phys. Lett.   80 ( 23 )   4390 - 4392   2002.04

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Preparation of (Bi, Sb)2S3 Semiconductor Films by Photochemical Deposition Method Reviewed

H. Sasaki, K. Shibayama, M. Ichimura and K. Masui

J. Cryst. Growth   237-239 ( 7A )   2125 - 2129   2002.04

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Changes in Carrier Profiles of Bonded SOI Wafers with Thermal Annealing Measured by the Spreading Resistance Method Reviewed

M. Ichimura, S. Ito, and E. Arai

Solid St. Electron   46 ( 7A )   545 - 553   2002.04

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Characterization of Si Wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photoconductivity Decay Method withSurface Electric Field Reviewed

A. Tada, M. Ichimura, E. Arai, H. Takamatsu, and S. Sumie

Jpn. J. Appl. Phys.   40 ( 5A )   3069 - 3074   2001.04

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Photochemical Deposition of Se and CdSe from Aqueous Solutions Reviewed

M. Ichimura, A. Nakamura, K. Takeuchi, and E. Arai

Thin Solid Films   384 ( 4B )   157 - 159   2001.04

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Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment Reviewed

M. Kato, F. Sobue, M. Ichimura, E. Arai, N. Yamada, Y. Tokuda, and T. Okumura

Jpn. J. Appl. Phys.   40 ( 4B )   2983 - 2986   2001.04

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Electrical and Optical Properties of CdS Films Grown by Photochemical Deposition from Aqueous Solutions Reviewed

R. Kumaresan, M. Ichimura, K. Takahashi, K. Takeuchi, F. Goto, and E. Arai

Jpn. J. Appl. Phys.   40 ( 5A )   3161 - 3162   2001.04

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Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane Reviewed

M. Kato, M. Ichimura, E. Arai, Y. Masuda, Y. Chen, S. Nishino, and Y. Tokuda

Jpn. J. Appl. Phys.   40 ( 8 )   4943 - 4947   2001.04

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Sacrificial Anodic Oxidation of 6H-SiC Reviewed

M. Kato, M. Ichimura, and E. Arai

Jpn. J. Appl. Phys.   40 ( 11A )   L1145 - L1147   2001.04

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Quality Assessment of Bridgman Grown CdTe Single Crystals using Double Crystal X-ray Diffractometry (DCD) and Synchrotron Radiation

R Kumaresan, R. Gopalakrishnan, S. Moorth Babu, P. Ramasamy, P. Zaumseil, and, M Ichimura

J. Crystal. Growth   210 ( 11 )   193 - 197   2000.04

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Retarded Diffusion of Phosphorus in Silicon-on-Insulator Structures Reviewed

H. Uchida, Y. Ieki, M. Ichimura, and E. Arai

Jpn. J. Appl. Phys.   39 ( 2B )   L137 - L140   2000.04

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Electrochemical Deposition of SnS Thin Films Reviewed

M. Ichimura, K. Takeuchi, Y. Ono, and E. Arai

Thin Solid Films   361-362 ( 12A )   98 - 101   2000.04

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Characterization of Si Wafers by μ-PCD with Surface Electric Field Reviewed

M. Ichimura, M. Hirano, A. Tada, E. Arai, H. Takamatsu, and S. Sumie

Mater. Sci. Eng. B   73 ( 12A )   230 - 234   2000.04

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Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers Reviewed

M. Hirano, M. Ichimura, and E. Arai

Jpn. J. Appl. Phys.   39 ( 12A )   6513 - 6514   2000.04

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Deposition of CdS and ZnS from Aqueous Solutions by a New Photochemical Technique Reviewed

M. Ichimura, F. Goto, Y. Ono, and E. Arai

J. Cryst. Growth   198-199 ( 3 )   308 - 312   1999.04

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Photochemical Deposition of CdS from Aqueous Solutions Reviewed

M. Ichimura, F. Goto, and E. Arai

J. Electrochem. Soc.   146 ( 3 )   1028 - 1034   1999.04

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