Papers - ICHIMURA Masaya

Deep levels affecting the resistivity in semi-insulating 6H–SiC Reviewed

M. Kato, K. Kito, and M. Ichimura

J. Appl. Phys.   108   053718   2010.09

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Fabrication of Photoconductive Copper Oxide Thin Films by the Chemical Bath Deposition Technique Reviewed

M. Muhibbullah and M. Ichimura

Jpn. J. Appl. Phys.   49   081102   2010.08

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Photochemical Deposition of GaSxOy Thin Films from Aqueous Solutions Reviewed

S. Chowdhury and M. Ichimura

Jpn. J. Appl. Phys.   49   062302   2010.06

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Improved emission of ferroelectric electron emitter by surface treatments in gas atmosphere Reviewed

T. Sugiyama, I. Ohwada, T. Nanataki, O. Eryu, M. Ichimura, and M. Gomi

J. Appl. Phys.   107   114109   2010.06

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Deposition of ZnS1-xOx thin films by the photochemical dip coating method and application for heterojunction solar cells Reviewed

M. Ichimura, K. Akita

Phys. Status Solidi C   7 ( 3-4 )   929 - 932   2010.03

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Properties of gas sensors based on photochemically deposited nanocrystalline SnO2 films Reviewed

M. Ichimura, Aodengbaoleer, T. Sueyoshi

Phys. Status Solidi C   7 ( 3-4 )   1168 - 1171   2010.03

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Experimental determination of band offsets at the SnS/CdS and SnS/InSxOy heterojunctions Reviewed

A. M. Abdel Haleem, M. Ichimura

J. Appl. Phys.   107   034507   2010.02

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Annealing Study of the electrochemically deposited InSxOy Thin Film and its Photovoltaic Application

A.M. Abdel Haleem, M. Ichimura

IEICE Transactions on Electronics   E92-C ( 12 )   1464 - 1469   2009.12

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Electrodeposition of wide band gap InGaxSyOz thin films for solar cell applications Reviewed

A.M. Abdel Haleem, M. Ichimura

Mater. Sci. Eng. B   164   180 - 185   2009.10

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Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on First-Principle Calculation Reviewed

M. Ichimura, Y. Nakashima

Jpn. J. Appl. Phys.   48 ( 9 )   090202   2009.09

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Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO2 Films Prepared by Photochemical Techniques Reviewed

M. Ichimura and T. Sueyoshi

Jpn. J. Appl. Phys.   48 ( 1 )   015503   2009.04

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Annealing Study of the electrochemically deposited InSxOy Thin Film and its Photovoltaic Application Reviewed

A.M. Abdel Haleem, M. Kato, and M. Ichimura

IEICE Transactions on Electronics   E92-C ( 12 )   1464 - 1469   2009.04

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Electrodeposition of wide band gap InGaxSyOz thin films for solar cell applications Reviewed

A.M. Abdel Haleem and M. Ichimura

Mater. Sci. Eng. B   164   180 - 185   2009.04

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Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on First-Principle Calculation Reviewed

M. Ichimura and Y. Nakashima

Jpn. J. Appl. Phys.   48 ( 9 )   090202   2009.04

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Wide Bandgap InS-based Thin Film: Deposition, Characterization, and Application for SnS Solar Cells Reviewed

A. M. Abdel Haleem and M. Ichimura

Jpn. J. Appl. Phys.   48 ( 3 )   035506   2009.04

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Photochemical deposition of FeSxOy Reviewed

H. Rezagholipour Dizaji and M. Ichimura

Mater. Sci. Eng. B   158   26 - 29   2009.04

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Calculation of Band offsets at the CdS/SnS heterojunction Reviewed

M. Ichimura

Solar Energy Mater. Solar Cells   93   375 - 378   2009.04

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Electrodeposited ZnO/SnS Heterostructures for Solar Cell Application Reviewed

M. Ichimura and H. Takagi

Jpn. J. Appl. Phys   47 ( 10 )   7845 - 7847   2008.04

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Fabrication of ZnO thin films by the photochemical deposition method Reviewed

M. Azuma and M. Ichimura

Mater. Res. Bull.   43   3537 - 3542   2008.04

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Electrochemical deposition of indium sulfide thin films using two-step pulse biasing Reviewed

A.M. Abdel Haleem, and M. Ichimura

Thin Solid Films   516   7783 - 7789   2008.04

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