Papers - ICHIMURA Masaya

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  • Unveiling the dynamics of phase-transition from ferroelectric to relaxor behavior in Nd-doped BNT-based lead-free piezoelectric ceramics Reviewed

    J. Eom, G. Lee, M. Saleem, M. Ichimura, M. Zubair Khan, M. Bilal Hanif, R. Ahmed Malikg, and J. H. Koh

    J. Mater. Chem. C   12   19463 - 19475   2024.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/d4tc03664f

  • Concentrations Influence of Complexing Agents on the Physicochemical Properties of Chemical Bath Deposited n-type FeSxOy for Homostructure Solar Cell Reviewed International coauthorship

    A. A. Ariff, A. Supee, M. Ichimura, M. Z. Mohd Yusop, A. Abdul Jalil

    Physica Status Solidi (a)   221   2400376   2024.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1002/pssa.202400376

  • Drop-dry deposition of SnO2 using Na2SnO3 and fabrication of SnO2/NiO transparent solar cells Reviewed

    M. Ichimura, T. Okada, A. Fukuda, T. Li

    J. Electron. Mater.   53   5265 - 5272   2024.09

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1007/s11664-024-11254-y

  • Low-temperature deposition of β-Ga2O3 thin films employing in situ pulsed laser-assisted RF sputtering system Reviewed International coauthorship

    Y.Y. Huh, C.H. Jo, M. Ichimura, J.H. Koh

    Mat. Sci. Semicond. Proc.   179   108428   2024.08

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1016/j.mssp.2024.108428

  • Enhanced soft piezoelectric properties of Sb2O3 doped 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 materials Reviewed International coauthorship

    T.W. Kim, G. Lee, M. Ichimura, J.H. Koh

    J. Alloy Comp.   987   174163   2024.06

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1016/j.jallcom.2024.174163

  • Dip-dry deposition of semiconducting aluminum oxide-hydroxide thin films Reviewed

    M. Ichimura, C. Baixian, T. Li

    Jpn. J. Appl. Phys.   63   018001   2024.01

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.35848/1347-4065/ad1423

  • Theoretical study of doping in GaOOH for electronics applications Reviewed

    Electron. Mater.   4 ( 4 )   148 - 157   2023.11

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    Other Link: https://www.mdpi.com/2673-3978/4/4/13

  • Drop-Dry Deposition of SnO2 Using a Complexing Agent and Fabrication of Heterojunctions with Co3O4 Reviewed

    T. Li, M. Ichimura

    Materials   16   5273   2023.08

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    Other Link: https://www.mdpi.com/1996-1944/16/15/5273

  • Low temperature processed CO2 laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductors Reviewed International coauthorship

    S.-H. Kim, C.-H. Jo, M.-S. Bae, M. Ichimura and J.-H. Koh

    J. Asian Ceramic Soc.   10 ( 1 )   68 - 79   2023.01

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Fabrication of Transparent ZnO/Cu-Mg(OH)2 Heterojunction Diodes by Electrochemical Deposition Reviewed

    M. Ichimura, M. Tanaka, T. Li

    Solid St. Electron.   198   108479   2022.12

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  • Drop-dry deposition of Ni(OH)2 precursors for fabrication of NiO thin films Reviewed

    T. Li, T. Okada, M. Ichimura

    Materials   15   4513   2022.07

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  • Hole capture cross section of the Al acceptor level in 4H-SiC Reviewed

    M. Kato, J. Di, Y. Ohkouchi, T. Mizuno, M. Ichimura, K. Kojima

    Mater. Today Commun.   31   103648   2022.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Fabrication of a Co3O4/ZnO Heterostructure by Electrochemical Deposition Reviewed International journal

    M. Ichimura, Y. Tomita

    Int. J. Electrochem. Sci.   16 ( 12 )   211223   2021.12

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  • Drop-dry Deposition of Co3O4 and Fabrication of Heterojunction Solar Cells with Electrochemically Deposited ZnO Reviewed International journal

    T. Li, M. Ichimura

    Semicond. Sci. Technol.   36   095030   2021.09

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Galvanostatic electrochemical deposition of Cu-doped Mg(OH)2 thin films and fabrication of p-n homojunction Reviewed International coauthorship International journal

    J. Kang, M. Keikhaei, T. Li, M. Ichimura

    Mater. Res. Bull.   137   111207   2021.05

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Fabrication of transparent Mg(OH)2 thin films by drop-dry deposition Reviewed International journal

    T. Li, M. Ichimura

    Materials   14   724   2021.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Pulse electrochemical deposition of Cu-doped p-type Fe-O thin films and fabrication of n-Fe-O/p-Fe-O solar cells Reviewed

    R. Takayanagi, M. Ichimura

    Jpn. J. Appl. Phys.   59 ( 11 )   111002   2020.11

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Fabrication of Transparent ZnO/(CuZn)O Heterojunction Solar Cells by Electrochemical Deposition Reviewed International journal

    M. Keikhaei, M. Tanaka, M. Ichimura

    Mater. Res. Exp.   7   106411   2020.11

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Impurity Doping in Mg(OH)2 for n-Type and p-Type Conductivity Control Reviewed International journal

    M. Ichimura

    Materials   13   2972   2020.07

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces Reviewed International journal

    M. Kato, Z. Xinchi, K. Kohama, S. Fukaya, M. Ichimura

    J. Appl. Phys.   127   195702   2020.05

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0007900

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