Papers - ICHIMURA Masaya
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Unveiling the dynamics of phase-transition from ferroelectric to relaxor behavior in Nd-doped BNT-based lead-free piezoelectric ceramics Reviewed
J. Eom, G. Lee, M. Saleem, M. Ichimura, M. Zubair Khan, M. Bilal Hanif, R. Ahmed Malikg, and J. H. Koh
J. Mater. Chem. C 12 19463 - 19475 2024.12
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1039/d4tc03664f
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Concentrations Influence of Complexing Agents on the Physicochemical Properties of Chemical Bath Deposited n-type FeSxOy for Homostructure Solar Cell Reviewed International coauthorship
A. A. Ariff, A. Supee, M. Ichimura, M. Z. Mohd Yusop, A. Abdul Jalil
Physica Status Solidi (a) 221 2400376 2024.10
Language：English Publishing type：Research paper (scientific journal)
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Drop-dry deposition of SnO2 using Na2SnO3 and fabrication of SnO2/NiO transparent solar cells Reviewed
M. Ichimura, T. Okada, A. Fukuda, T. Li
J. Electron. Mater. 53 5265 - 5272 2024.09
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Low-temperature deposition of β-Ga2O3 thin films employing in situ pulsed laser-assisted RF sputtering system Reviewed International coauthorship
Y.Y. Huh, C.H. Jo, M. Ichimura, J.H. Koh
Mat. Sci. Semicond. Proc. 179 108428 2024.08
Language：English Publishing type：Research paper (scientific journal)
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Enhanced soft piezoelectric properties of Sb2O3 doped 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 materials Reviewed International coauthorship
T.W. Kim, G. Lee, M. Ichimura, J.H. Koh
J. Alloy Comp. 987 174163 2024.06
Language：English Publishing type：Research paper (scientific journal)
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Dip-dry deposition of semiconducting aluminum oxide-hydroxide thin films Reviewed
M. Ichimura, C. Baixian, T. Li
Jpn. J. Appl. Phys. 63 018001 2024.01
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Theoretical study of doping in GaOOH for electronics applications Reviewed
Electron. Mater. 4 ( 4 ) 148 - 157 2023.11
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
Other Link： https://www.mdpi.com/2673-3978/4/4/13
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Drop-Dry Deposition of SnO2 Using a Complexing Agent and Fabrication of Heterojunctions with Co3O4 Reviewed
T. Li, M. Ichimura
Materials 16 5273 2023.08
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
Other Link： https://www.mdpi.com/1996-1944/16/15/5273
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Low temperature processed CO2 laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductors Reviewed International coauthorship
S.-H. Kim, C.-H. Jo, M.-S. Bae, M. Ichimura and J.-H. Koh
J. Asian Ceramic Soc. 10 ( 1 ) 68 - 79 2023.01
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of Transparent ZnO/Cu-Mg(OH)2 Heterojunction Diodes by Electrochemical Deposition Reviewed
M. Ichimura, M. Tanaka, T. Li
Solid St. Electron. 198 108479 2022.12
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Drop-dry deposition of Ni(OH)2 precursors for fabrication of NiO thin films Reviewed
T. Li, T. Okada, M. Ichimura
Materials 15 4513 2022.07
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Hole capture cross section of the Al acceptor level in 4H-SiC Reviewed
M. Kato, J. Di, Y. Ohkouchi, T. Mizuno, M. Ichimura, K. Kojima
Mater. Today Commun. 31 103648 2022.04
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of a Co3O4/ZnO Heterostructure by Electrochemical Deposition Reviewed International journal
M. Ichimura, Y. Tomita
Int. J. Electrochem. Sci. 16 ( 12 ) 211223 2021.12
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Drop-dry Deposition of Co3O4 and Fabrication of Heterojunction Solar Cells with Electrochemically Deposited ZnO Reviewed International journal
T. Li, M. Ichimura
Semicond. Sci. Technol. 36 095030 2021.09
Language：English Publishing type：Research paper (scientific journal)
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Galvanostatic electrochemical deposition of Cu-doped Mg(OH)2 thin films and fabrication of p-n homojunction Reviewed International coauthorship International journal
J. Kang, M. Keikhaei, T. Li, M. Ichimura
Mater. Res. Bull. 137 111207 2021.05
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of transparent Mg(OH)2 thin films by drop-dry deposition Reviewed International journal
T. Li, M. Ichimura
Materials 14 724 2021.04
Language：English Publishing type：Research paper (scientific journal)
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Pulse electrochemical deposition of Cu-doped p-type Fe-O thin films and fabrication of n-Fe-O/p-Fe-O solar cells Reviewed
R. Takayanagi, M. Ichimura
Jpn. J. Appl. Phys. 59 ( 11 ) 111002 2020.11
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of Transparent ZnO/(CuZn)O Heterojunction Solar Cells by Electrochemical Deposition Reviewed International journal
M. Keikhaei, M. Tanaka, M. Ichimura
Mater. Res. Exp. 7 106411 2020.11
Language：English Publishing type：Research paper (scientific journal)
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Impurity Doping in Mg(OH)2 for n-Type and p-Type Conductivity Control Reviewed International journal
M. Ichimura
Materials 13 2972 2020.07
Language：English Publishing type：Research paper (scientific journal)
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Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces Reviewed International journal
M. Kato, Z. Xinchi, K. Kohama, S. Fukaya, M. Ichimura
J. Appl. Phys. 127 195702 2020.05
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/5.0007900
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n-type and p-type semiconducting Cu-doped Mg (OH)2 thin films Reviewed International journal
M. Keikhaei, M. Ichimura
Semicond. Sci. Technol. 35 ( 3 ) 035020 2020.03
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of p-type Transparent (CuZn)O Thin Films by the Electrochemical Deposition Method Reviewed International journal
M. Keikhaei and M. Ichimura
Int. J. Electrochem. Sci. 2020.01
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of ZnO/NiO transparent solar cells by electrochemical deposition Reviewed
M. Koyama, M. Ichimura
Jpn. J. Appl. Phys. 58 128003 2019.12
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of Mg(OH)2 Thin Films by Electrochemical Deposition with Cu Catalyst Reviewed
M. Keikhaei, M. Ichimura
Thin Solid Films 681 41 - 46 2019.07
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of photovoltaic FeSxOy/ZnO heterostructures by electrochemical deposition
W. Ji, M. Ichimura
Jpn. J. Appl. Phys. 58 050922 2019.05
Language：English Publishing type：Research paper (scientific journal)
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Semiconducting Cu-doped AlOx films fabricated by drop-photochemical deposition Reviewed International journal
M. Umemura, M. Ichimura
Mater. Res. Express 6 035904 2019.03
Language：English Publishing type：Research paper (scientific journal)
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On the Possibility of Valence Control of Aluminum Oxide for Electronics Applications Reviewed International journal
M. Ichimura
J. Electron. Mater. 6 ( 1 ) 583 - 588 2019.01
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of Pyrite FeS2 Films from Electrochemically Deposited FeOOH by Sulfur Annealing Reviewed International journal
S. Maki, N. Takeda, M. Ichimura
Int. J. Electrochem. Sci. 13 10829 - 10836 2018.10
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of Copper Oxide Thin Films by Galvanostatic Deposition from Weakly Acidic Solutions Reviewed International journal
M. Keikhaei, M. Ichimura
Int. J. Electrochem. Sci. 13 9931 - 9941 2018.09
Language：English Publishing type：Research paper (scientific journal)
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Electrochemical deposition of Cu-doped p-type iron oxide thin films Reviewed International journal
S. Kobayashi, M. Ichimura
Semicond. Sci. Technol. 33 ( 9 ) 105006 2018.09
Language：English Publishing type：Research paper (scientific journal)
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Passivation of surface recombination at the Si-face of 4H-SiC by acidic solutions Reviewed International journal
Y. Ichikawa, M. Ichimura, T. Kimoto, M. Kato
ECS J. Solid St. Sci. Technol. 7 ( 8 ) Q127 - Q130 2018.08
Language：English Publishing type：Research paper (scientific journal)
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Fast electrochemical deposition of Ni(OH)2 precursor involving water electrolysis for fabrication of NiO thin films Reviewed International journal
M. Koyama, M. Ichimura
Semicond. Sci. Technol. 33 ( 5 ) 055011 2018.05
Language：English Publishing type：Research paper (scientific journal)
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Effects of Complexing Agents on Electrochemical Deposition of FeSxOy in ZnO/FeSxOy Heterostructures Reviewed International journal
A. Supee, M. Ichimura
Applied Physics A 123 722 2017.11
Language：English Publishing type：Research paper (scientific journal)
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Improved performance of 3C-SiC photocathodes by using a pn junction Reviewed International journal
N. Ichikawa, M. Ichimura, M. Kato
Int. J. Hydrogen Energy 42 22698 - 22703 2017.10
Language：English Publishing type：Research paper (scientific journal)
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Electrochemical deposition of transparent p-type semiconductor NiO Reviewed
137 542 - 546 2017.09
Language：Japanese Publishing type：Research paper (scientific journal)
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Drop-photochemical deposition of aluminum oxide thin films from aqueous solutions Reviewed International journal
S. Sato and M. Ichimura
Materials Research Express 4 046405 2017.04
Language：English Publishing type：Research paper (scientific journal)
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Three-step pulse electrochemical deposition of FeSxOy thin films and their characterization Reviewed International journal
A. Supee and M. Ichimura
Materials Research Express 4 036410 2017.03
Language：English Publishing type：Research paper (scientific journal)
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The enhanced performance of 3C-SiC photocathodes for the generation of hydrogen Reviewed International journal
N. Ichikawa, M. Kato, M. Ichimura
Appl. Phys. Lett. 109 153904 2016.10
Language：English Publishing type：Research paper (scientific journal)
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Effects of annealing on properties of electrochemically deposited CuxZnyS thin films Reviewed
Bayingaerdi Tong and M. Ichimura
Trans. Mater. Res. Soc. Jpn. 41 255 2016.09
Language：English Publishing type：Research paper (scientific journal)
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Annealing of p-type wide-gap CuxZnyS thin films deposited by the photochemical deposition method Reviewed
Bayingaerdi Tong and M. Ichimura
Jpn. J. Appl. Phys. 55 098004 2016.09
Language：English Publishing type：Research paper (scientific journal)
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Effects of complexing agents on electrochemical deposition of FeSxOy thin films Reviewed
A. Supee and M. Ichimura
Jpn. J. Appl. Phys. 55 081202 2016.08
Language：English Publishing type：Research paper (scientific journal)
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J. J. M. Vequizo, M. Yokoyama, M. Ichimura, and A. Yamakata
Appl. Phys. Exp. 9 067101 2016.06
Language：English Publishing type：Research paper (scientific journal)
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Effects of Tartaric Acid on Electrochemical Deposition of SnS in ZnO/SnS Heterostructures Reviewed
A. Supee and M. Ichimura
Trans. Mater. Res. Soc. Jpn. 41 193 2016.06
Language：English Publishing type：Research paper (scientific journal)
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Mössbauer study of electrochemically deposited amorphous iron-sulfide-oxide thin films Reviewed
M. Ichimura, T. Kajima, S. Kawai, K. Mibu
Jpn. J. Appl. Phys. 55 038006 2016.03
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Comparison of amorphous Fe-S-O and crystalline FeS2 pyrite for photovoltaic application Reviewed International journal
S. Kawai, T. Kajima, M. Ichimura
Materials Research Express 3 025901 2016.02
Language：English Publishing type：Research paper (scientific journal)
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Spectral response, carrier lifetime, and photocurrents of SiC photocathodes Reviewed
M. Kato, K. Miyake, T. Yasuda, M. Ichimura, T. Hatayama, T. Ohshima
Jpn. J. Appl. Phys. 55 01AC02 2016.01
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of Cu2O/Fe–O heterojunction solar cells by electrodeposition Reviewed International journal
J. J. M. Vequizo, C. Zhang, M. Ichimura
Thin Solid Films 597 83 2015.12
Language：English Publishing type：Research paper (scientific journal)
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Carrier lifetime measurements on various crystal faces of rutile TiO2 single crystals Reviewed International journal
M. Kato, K. Kohama, Y. Ichikawa, M. Ichimura
Mater. Lett. 160 397 2015.12
Language：English Publishing type：Research paper (scientific journal)
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Conduction type of nonstoichiometric alloy semiconductor CuxZnyS deposited by the photochemical deposition method Reviewed International journal
M. Ichimura, Y. Maeda
Thin Solid Films 594 277 2015.11
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Effects of Complexing Agents on Three Steps Pulse Electrodeposited SnS Thin Films Reviewed International journal
A. Supee, Y. Tanaka, M. Ichimura
Mater. Sci. Semicond. Processing 38 290 2015.10
Language：English Publishing type：Research paper (scientific journal)
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N. Ichikawa, M. Kato, M. Ichimura
Appl. Phys. Exp. 8 091301 2015.08
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of transparent CuxZnyS/ZnS heterojunction diodes by photochemical deposition Reviewed International journal
M. Ichimura, Y. Maeda
Physica Status Solidi (c) 12 504 2015.06
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Heterojunctions Based on Photochemically Deposited CuxZnyS and Electrochemically Deposited ZnO Reviewed
M. Ichimura, Y. Maeda
Solid St. Electron. 107 8 2015.05
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron–hole scattering Reviewed
M. Kato, Y. Mori, M. Ichimura
Jpn. J. Appl. Phys. 54 04DP14 2015.04
Language：English Publishing type：Research paper (scientific journal)
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Band alignment at the CdS/FeS2 interface based on the first-principles calculation Reviewed
M. Ichimura and S. Kawai
Jpn. J. Appl. Phys. 54 ( 3 ) 038002 2015.03
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Physical properties of rf magnetron sputter deposited NiO:WO3 thin films Reviewed International coauthorship International journal
K. S. Usha, R Sivakumar, C. Sanjeeviraja, M. Ichimura
Mater. Res. Express 2 016401 2015.01
Language：English Publishing type：Research paper (scientific journal)
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Influence of Secondary Phases in Kesterite-Cu2ZnSnS4 Absorber Material Based on the First-Principles Calculation Reviewed
W. Bao, M. Ichimura
Int. J. Photoenergy 2015 592079 2015.01
Language：English Publishing type：Research paper (scientific journal)
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Electrochemical Deposition of Fe-S-O Thin Films Reviewed
K. Yang, S. Kawai, M. Ichimura
Thin Solid Films 573 1 - 5 2014.12
Language：English Publishing type：Research paper (scientific journal)
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Surface recombination velocities for n-type 4H-SiC treated by various processes Reviewed
Y. Mori, M. Kato, M. Ichimura
J. Phys. D: Appl. Phys. 47 335102 2014.07
Language：English Publishing type：Research paper (scientific journal)
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Electrochemical deposition of aluminum oxide thin films from aqueous baths Reviewed
A.M. Abdel Haleem, M. Ichimura
Materials Letters 130 26 - 28 2014.06
Language：English Publishing type：Research paper (scientific journal)
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Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation Reviewed
M. Kato, K. Yoshihara, M. Ichimura, T. Hatayama, T. Ohshima
Jpn. J. Appl. Phys. 53 04EP09 2014.04
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of Cu2O/γ-FeOOH heterojunction solar cells by electrodeposition Reviewed
J. J. M. Vequizo, M. Ichimura
Appl. Phys. Express 7 045501 2014.04
Language：English Publishing type：Research paper (scientific journal)
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Epitaxial p-type SiC as a self-driven photocathode for water splitting Reviewed
M. Kato, T. Yasuda, K. Miyake, M. Ichimura, and T. Hatayama
Int. J. Hydrogen Energy 39 4845 - 4849 2014.03
Language：English Publishing type：Research paper (scientific journal)
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Electrochemical deposition of iron sulfide thin films and heterojunction diodes with zinc oxide Reviewed
S. Kawai, R. Yamazaki, S. Sobue, E. Okuno, and M. Ichimura
APL Matter 2 ( 3 ) 032108 2014.03
Language：English Publishing type：Research paper (scientific journal)
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Electrodeposition and Characterization of g-FeOOH Thin Films from Oxygen-Bubbled Aqueous Iron Sulfate Solutions Reviewed
J. J. M. Vequizo and M. Ichimura
Appl. Phys. Express 6 125501 2013.12
Language：English Publishing type：Research paper (scientific journal)
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Efficiency of a solar cell with intermediate energy levels: An example study on hydrogen implanted Si solar cells Reviewed
M. Ichimura, H. Sakakibara, K. Wada, and M. Kato
J. Appl. Phys. 114 ( 11 ) 114505 2013.09
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate Reviewed
M. Kato, A. Yoshida, M. Ichimura, H. Nagasawa
Physica Status Solidi A 210 1719 - 1725 2013.08
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of TiO2/Cu2O heterojunction solar cells by electrophoretic deposition and electrodeposition Reviewed
M. Ichimura and Y. Kato
Mater. Sci. Semicond. Processing 16 1538 - 1541 2013.07
Language：English Publishing type：Research paper (scientific journal)
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Electrodeposition of Ga-O Thin Films from Aqueous Gallium Sulfate Solutions Reviewed
J. J. M. Vequizo and M. Ichimura
Jpn. J. Appl. Phys. 52 ( 7 ) 075503 2013.07
Language：English Publishing type：Research paper (scientific journal)
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Heterostructure Solar Cells Based on Sol-Gel Deposited SnO2 and Electrochemically Deposited Cu2O Reviewed
A. Fukuda and M. Ichimura
Mater. Sci. Appl. 4 ( 6A ) 1 - 4 2013.06
Language：English Publishing type：Research paper (scientific journal)
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Band Offsets at the ZnO/Cu2ZnSnS4 Interface Based on the First Principles Calculation Reviewed
Wujisiguleng Bao and M. Ichimura
Jpn. J. Appl. Phys. 52 ( 6 ) 061203 2013.06
Language：English Publishing type：Research paper (scientific journal)
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Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of 4H-SiC Schottky Contacts Reviewed
M. Kato, M. Kimura, and M. Ichimura
Jpn. J. Appl. Phys. 52 ( 4 ) 04CP02 2013.04
Language：English Publishing type：Research paper (scientific journal)
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H2O2 treatment of electrochemically deposited Cu2O thin films for enhancing optical absorption Reviewed
Y. Song and M. Ichimura
Int. J. Photoenergy 2013 738063 2013.02
Language：English Publishing type：Research paper (scientific journal)
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Structural, Optical, and Electrical Characterization of Spray Pyrolysed Indium Sulfide Thin Films Reviewed
F. Rahman, J. Podder, and M. Ichimura
Surface Review and Letters 20 ( 2 ) 1350014 2013.02
Language：English Publishing type：Research paper (scientific journal)
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光化学堆積SnO2薄膜を用いた携帯式水素検出器の試作 Reviewed
オドンボリル、森口、市村
電気学会論文誌A 133 ( 1 ) 28 - 29 2013.01
Language：Japanese Publishing type：Research paper (scientific journal)
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Wujisiguleng Bao, M. Ichimura
Int. J. Photoenergy 2012 619812 2012.12
Language：English Publishing type：Research paper (scientific journal)
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Improvement of Electrochemically Deposited Cu2O/ZnO Heterojunction Solar Cells by Modulation of Deposition Current Reviewed
Y. Song and M. Ichimura
Jpn. J. Appl. Phys. 51 10NC39 2012.10
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of Electrodeposited SnS/SnO2 Heterojunction Solar Cells Reviewed
J. J. M. Vequizo and M. Ichimura
Jpn. J. Appl. Phys. 51 10NC38 2012.10
Language：English Publishing type：Research paper (scientific journal)
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Prediction of the Band Offsets at the CdS/Cu2ZnSnS4 Interface Based on the First-Principles Calculation Reviewed
Wujisiguleng Bao and M. Ichimura
Jpn. J. Appl. Phys. 51 10NC31 2012.10
Language：English Publishing type：Research paper (scientific journal)
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Photochemical deposition of p-type transparent alloy semiconductor CuxZnyS Reviewed
Mandula, K. Yang, and M. Ichimura
Semicond. Sci. Technol. 27 125007 2012.10
Language：English Publishing type：Research paper (scientific journal)
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Deposition of Fe doped nanocrystalline SnO2 thin films by the photochemical deposition method Reviewed
Dengbaoleer Ao and M. Ichimura
Trans. Mater. Res. Soc. Jpn. 37 377 - 380 2012.09
Language：English Publishing type：Research paper (scientific journal)
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Dengbaoleer Ao and M. Ichimura
J. Non-Crystalline Solids 358 2470 - 2473 2012.09
Language：English Publishing type：Research paper (scientific journal)
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K. Yang and M. Ichimura
Int. J. Photoenergy 2012 154704 2012.08
Language：English Publishing type：Research paper (scientific journal)
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SiC photoelectrodes for a self-driven water-splitting cell Reviewed
T. Yasuda, M. Kato, M. Ichimura, and T. Hatayama
Appl. Phys. Lett. 101 053902 2012.08
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of Copper Oxide Thin Films by the Drop Chemical Deposition Technique Reviewed
M. Muhibbullah and M. Ichimura
Mater. Res. Bull. 47 1968 - 1972 2012.08
Language：English Publishing type：Research paper (scientific journal)
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Y. Nakashima and M. Ichimura
Int. J. Photoenergy 2012 171432 2012.05
Language：English Publishing type：Research paper (scientific journal)
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Dengbaoleer Ao and M. Ichimura
Solid St. Electron. 69 1 - 3 2012.03
Language：English Publishing type：Research paper (scientific journal)
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Electrochemical Deposition of CuxS and CuxZnyS Thin Films with p-Type Conduction and Photosensitivity Reviewed
K. Yang, Y. Nakashima, and M. Ichimura
J. Electrochem. Soc. 159 ( 3 ) H250 - H254 2012.03
Language：English Publishing type：Research paper (scientific journal)
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Electrochemical deposition of Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers Reviewed
M. Kato, A. Yoshida, and M. Ichimura
Jpn. J. Appl. Phys. 51 ( 2 ) 02BP12 2012.02
Language：English Publishing type：Research paper (scientific journal)
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Structural, electrical and optical characterization of CuInS2 thin films deposited by spray pyrolysis Reviewed
K. M. A. Hussain, J. Podder, D. K. Saha, and M. Ichimura
Indian J. Pure Appl. Phys. 50 117 - 122 2012.02
Language：English Publishing type：Research paper (scientific journal)
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Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation Reviewed
M. Kato, Y. Matsushita, M. Ichimura, T. Hatayama, and T. Ohshima
Jpn. J. Appl. Phys. 51 ( 2 ) 028006 2012.02
Language：English Publishing type：Research paper (scientific journal)
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New approach for generating Cu2O/TiO2 composite films for solar cell applications Reviewed
A. R. Zainun, T. Sakamoto, U. M. Noor, M. Rusop, M. Ichimura
Mater. Lett. 66 254 - 256 2012.01
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of Heterojunctions Based on Chemically Deposited Copper Oxide Thin Films for Solar Cell Application Reviewed
M. Muhibbullah and M. Ichimura
Trans. Mater. Res. Soc. Jpn. 36 195 - 198 2011.07
Language：English Publishing type：Research paper (scientific journal)
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Characteristics of Ferroelectric Electron Emitters with Three-dimensional Emission Sites Formed by Chemical Etching Reviewed
T. Sugiyama, I. Ohwada, T. Nanataki, O. Eryu, M. Ichimura, and M. Gomi
J. Vac. Sci. Technol. B 92 ( 5 ) 032210 2011.05
Language：English Publishing type：Research paper (scientific journal)
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Band Alignment at the Cu2O/ZnO Heterojunction Reviewed
M. Ichimura and Y. Song
Jpn. J. Appl. Phys. 50 ( 5 ) 051002 2011.05
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of Transparent p-Type CuxZnyS Thin Films by the Electrochemical Deposition Method Reviewed
K. Yang and M. Ichimura
Jpn. J. Appl. Phys. 20 ( 4 ) 040202 2011.04
Language：English Publishing type：Research paper (scientific journal)
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Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO Reviewed
M. Kato, H. Ono, M. Ichimura, G. Feng, T. Kimoto
Jpn. J. Appl. Phys. 50 ( 3 ) 036603 - 036603 2011.03
Language：English Publishing type：Research paper (scientific journal)
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Electrodeposition of SnO2 Thin Films from Aqueous Tin Sulfate Solutions Reviewed
J. M. Vequizo, J. Wang, and M. Ichimura
Jpn. J. Appl. Phys. 49 125502 2010.12
Language：English Publishing type：Research paper (scientific journal)
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Electrochemical deposition and characterization of CuGaxSyOz Reviewed
S. Chowdhury, M. Ichimura
Mater. Sci. Semicond. Processing 13 ( 4 ) 252 - 256 2010.12
Language：English Publishing type：Research paper (scientific journal)
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Pulsed electrodeposition of oxygen-free tin monosulfide thin films using lactic acid/sodium lactate buffered electrolytes Reviewed
F. Kang and M. Ichimura
Thin Solid Films 519 725 - 728 2010.10
Language：English Publishing type：Research paper (scientific journal)
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Deep levels affecting the resistivity in semi-insulating 6H–SiC Reviewed
M. Kato, K. Kito, and M. Ichimura
J. Appl. Phys. 108 053718 2010.09
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of Photoconductive Copper Oxide Thin Films by the Chemical Bath Deposition Technique Reviewed
M. Muhibbullah and M. Ichimura
Jpn. J. Appl. Phys. 49 081102 2010.08
Language：English Publishing type：Research paper (scientific journal)
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Photochemical Deposition of GaSxOy Thin Films from Aqueous Solutions Reviewed
S. Chowdhury and M. Ichimura
Jpn. J. Appl. Phys. 49 062302 2010.06
Language：English Publishing type：Research paper (scientific journal)
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Improved emission of ferroelectric electron emitter by surface treatments in gas atmosphere Reviewed
T. Sugiyama, I. Ohwada, T. Nanataki, O. Eryu, M. Ichimura, and M. Gomi
J. Appl. Phys. 107 114109 2010.06
Language：English Publishing type：Research paper (scientific journal)
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Deposition of ZnS1-xOx thin films by the photochemical dip coating method and application for heterojunction solar cells Reviewed
M. Ichimura, K. Akita
Phys. Status Solidi C 7 ( 3-4 ) 929 - 932 2010.03
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Properties of gas sensors based on photochemically deposited nanocrystalline SnO2 films Reviewed
M. Ichimura, Aodengbaoleer, T. Sueyoshi
Phys. Status Solidi C 7 ( 3-4 ) 1168 - 1171 2010.03
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Experimental determination of band offsets at the SnS/CdS and SnS/InSxOy heterojunctions Reviewed
A. M. Abdel Haleem, M. Ichimura
J. Appl. Phys. 107 034507 2010.02
Language：English Publishing type：Research paper (scientific journal)
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Annealing Study of the electrochemically deposited InSxOy Thin Film and its Photovoltaic Application
A.M. Abdel Haleem, M. Ichimura
IEICE Transactions on Electronics E92-C ( 12 ) 1464 - 1469 2009.12
Language：English Publishing type：Research paper (scientific journal)
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Electrodeposition of wide band gap InGaxSyOz thin films for solar cell applications Reviewed
A.M. Abdel Haleem, M. Ichimura
Mater. Sci. Eng. B 164 180 - 185 2009.10
Language：English Publishing type：Research paper (scientific journal)
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Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on First-Principle Calculation Reviewed
M. Ichimura, Y. Nakashima
Jpn. J. Appl. Phys. 48 ( 9 ) 090202 2009.09
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO2 Films Prepared by Photochemical Techniques Reviewed
M. Ichimura and T. Sueyoshi
Jpn. J. Appl. Phys. 48 ( 1 ) 015503 2009.04
Language：English Publishing type：Research paper (scientific journal)
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Annealing Study of the electrochemically deposited InSxOy Thin Film and its Photovoltaic Application Reviewed
A.M. Abdel Haleem, M. Kato, and M. Ichimura
IEICE Transactions on Electronics E92-C ( 12 ) 1464 - 1469 2009.04
Language：English Publishing type：Research paper (scientific journal)
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Electrodeposition of wide band gap InGaxSyOz thin films for solar cell applications Reviewed
A.M. Abdel Haleem and M. Ichimura
Mater. Sci. Eng. B 164 180 - 185 2009.04
Language：English Publishing type：Research paper (scientific journal)
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Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on First-Principle Calculation Reviewed
M. Ichimura and Y. Nakashima
Jpn. J. Appl. Phys. 48 ( 9 ) 090202 2009.04
Language：English Publishing type：Research paper (scientific journal)
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Wide Bandgap InS-based Thin Film: Deposition, Characterization, and Application for SnS Solar Cells Reviewed
A. M. Abdel Haleem and M. Ichimura
Jpn. J. Appl. Phys. 48 ( 3 ) 035506 2009.04
Language：English Publishing type：Research paper (scientific journal)
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Photochemical deposition of FeSxOy Reviewed
H. Rezagholipour Dizaji and M. Ichimura
Mater. Sci. Eng. B 158 26 - 29 2009.04
Language：English Publishing type：Research paper (scientific journal)
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Calculation of Band offsets at the CdS/SnS heterojunction Reviewed
M. Ichimura
Solar Energy Mater. Solar Cells 93 375 - 378 2009.04
Language：English Publishing type：Research paper (scientific journal)
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Electrodeposited ZnO/SnS Heterostructures for Solar Cell Application Reviewed
M. Ichimura and H. Takagi
Jpn. J. Appl. Phys 47 ( 10 ) 7845 - 7847 2008.04
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of ZnO thin films by the photochemical deposition method Reviewed
M. Azuma and M. Ichimura
Mater. Res. Bull. 43 3537 - 3542 2008.04
Language：English Publishing type：Research paper (scientific journal)
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Electrochemical deposition of indium sulfide thin films using two-step pulse biasing Reviewed
A.M. Abdel Haleem, and M. Ichimura
Thin Solid Films 516 7783 - 7789 2008.04
Language：English Publishing type：Research paper (scientific journal)
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Characterization of plasma etching damage on p-type GaN using Schottky diodes Reviewed
M. Kato, K. Mikamo, M. Ichimura, M. Kanechika, O. Ishiguro, and T. Kachi
J. Appl. Phys. 103 093701 2008.04
Language：English Publishing type：Research paper (scientific journal)
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Direct Fabrication of Fine Gold Patterns from an Aqueous Solution by a UV Laser Reviewed
A. Senthil Kumaran and M. Ichimura
J. Electron. Mater. 37 ( 4 ) 523 - 526 2008.04
Language：English Publishing type：Research paper (scientific journal)
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Photovoltaic cells based on pulsed electrochemically deposited SnS and photochemically deposited CdS and Cd1-xZnxS Reviewed
M. Gunasekaran and M. Ichimura
Solar Energy Mater. Solar Cells 91 ( 9 ) 774 - 778 2007.04
Language：English Publishing type：Research paper (scientific journal)
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Observation of Inhomogeneity of Schottky Barrier Height on 4H-SiC Using the Electrochemical Deposition Reviewed
M. Kato, K. Ogawa, and M. Ichimura
Jpn. J. Appl. Phys. 46 L997 - L999 2007.04
Language：English Publishing type：Research paper (scientific journal)
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Excess Carrier Lifetime in a Bulk p-type 4H-SiC Wafer Measured by the Microwave Photoconductivity Decay Method Reviewed
M. Kato, M. Kawai, T. Mori, M. Ichimura, S. Sumie, and H. Hashizume
Jpn. J. Appl. Phys. 46 ( 8 ) 5057 - 5061 2007.04
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of ZnS thin films by an improved photochemical deposition method and application to ZnS/SnS heterojunction cells Reviewed
T. Miyawaki and M. Ichimura
Materials Letters 61 4683 - 4686 2007.04
Language：English Publishing type：Research paper (scientific journal)
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Photochemical deposition of patterned gold thin films Reviewed
A. Senthil Kumaran,T. Miyawaki, and M. Ichimura
Jpn. J. Appl. Phys. 45 ( 48 ) L1283 - L1285 2006.04
Language：English Publishing type：Research paper (scientific journal)
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Temperature dependence of a slow component of excess carrier decay curves Reviewed
M. Ichimura
Solid St. Electron. 50 ( 11-12 ) 1761 - 1766 2006.04
Language：English Publishing type：Research paper (scientific journal)
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Optical cross sections of deep levels in 4H-SiC Reviewed
M. Kato, S. Tanaka, M. Ichimura, E. Arai, S. Nakamura T. Kimoto, and R.Passler
J. Appl. Phys. 100 053708 2006.04
Language：English Publishing type：Research paper (scientific journal)
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Room-Temperature Hydrogen Sensing Properties of SnO2 Thin Films Fabricated by the Photochemical Deposition and Doping Methods Reviewed
D. Ito and M. Ichimura
Jpn. J. Appl. Phys. 45 ( 9 ) 7094 - 7096 2006.04
Language：English Publishing type：Research paper (scientific journal)
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Electrochemical deposition of ZnO thin films from acidic solutions Reviewed
N. Fathy and M. Ichimura
J. Cryst. Growth 294 ( 2 ) 191 - 196 2006.04
Language：English Publishing type：Research paper (scientific journal)
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Preparation of ternary Cd1-xZnxS alloy by photochemical deposition (PCD) and its application to photovoltaic devices Reviewed
M. Gunasekaran, P. Ramasamy, and M. Ichimura
Phys. Stat. Sol. (c) 3 ( 8 ) 2656 - 2660 2006.04
Language：English Publishing type：Research paper (scientific journal)
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Optical and Electrical Characterization of Photochemically Deposited CdS and Cd1-xZnxS Alloys Reviewed
M. Gunasekaran, P. Ramasamy, and M. Ichimura
J. Electrochem. Soc. 153 ( 7 ) G664 - G668 2006.04
Language：English Publishing type：Research paper (scientific journal)
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Deposition of SnSxOy Films by Electrochemical Deposition Using Three-Step Pulse and Their Characterization Reviewed
K. Omoto, N. Fathy and M. Ichimura
Jpn. J. Appl. Phys. 45 ( 3 ) 1500 - 1505 2006.04
Language：English Publishing type：Research paper (scientific journal)
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Deposition of cadmium sulphide and cadmium zinc sulphide thin films by photochemical deposition and their characterisation Reviewed
M. Gunasekaran, R. Gopalakrishnan, R. Sivakumar, P. Ramasamy and M. Ichimura
Surface Engineering 22 73 - 77 2006.04
Language：English Publishing type：Research paper (scientific journal)
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Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution Reviewed
T. Mori, M. Kato, H. Watanabe, M. Ichimura, E. Arai, S. Sumie and H. Hashizume
Jpn. J. Appl. Phys. 44 ( 12 ) 8333 - 8339 2005.04
Language：English Publishing type：Research paper (scientific journal)
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Electrochemical Deposition of ZnO1-xSx Thin Films Using Three-Step Pulse Reviewed
Naglaa Fathy and M. Ichimura
Jpn. J. Appl. Phys. 44 L1295 - L1297 2005.04
Language：English Publishing type：Research paper (scientific journal)
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Deposition of Cd1-xZnxS (0 <x <1) Alloys by Photochemical Deposition Technique Reviewed
M. Gunasekaran and M. Ichimura
Jpn. J. Appl. Phys. 44 ( 10 ) 7345 - 7350 2005.04
Language：English Publishing type：Research paper (scientific journal)
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Photoelectrical properties of ZnS thin films deposited from aqueous solution using pulsed electrochemical deposition Reviewed
N. Fathy and M. Ichimura
Solar Energy Mater. Solar Cells 87 ( 1-4 ) 747 - 756 2005.04
Language：English Publishing type：Research paper (scientific journal)
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Crystal growth of pure and doped-KGd(WO4)2 and their characterization for laser applications
A.Senthil Kumaran, A.L. Chandru, S.M. Babu, I. Bhaumik, S. Ganesamoorthy, A.K. Karnal, V.K. Wadhawan, and M. Ichimura
J. Cryst. Growth 275 e2117 - e2121 2005.04
Publishing type：Research paper (scientific journal)
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Growth and characterization of pure and doped KY(WO4)2 crystals Reviewed
A.Senthil Kumaran, A.L. Chandru, S.M. Babu, and M. Ichimura
J. Cryst. Growth 275 e1901 - e1905 2005.04
Language：English Publishing type：Research paper (scientific journal)
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Photochemical deposition of CuxS thin films from aqueous solutions Reviewed
J. Podder, R. Kobayashi, and M. Ichimura
J. Cryst. Growth 275 e937 - e942 2005.04
Language：English Publishing type：Research paper (scientific journal)
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Characteriztion of Electrical Properties and Photosensitivity of SnS Thin Films Prepared by the Electrochemical Deposition Method Reviewed
N. Sato, M. Ichimura, E. Arai and Y. Yamazaki
Solar Energy Mater. Solar Cells 85 ( 2 ) 153 - 165 2005.04
Language：English Publishing type：Research paper (scientific journal)
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Fabrication of SnO2 Thin Films by a Photochemical Deposition Method Reviewed
M. Ichimura , K. Shibayama and K. Masui
Thin Solid Films 466 ( 1-2 ) 34 - 36 2004.04
Language：English Publishing type：Research paper (scientific journal)
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Photochemical Deposition of ZnS Thin Films by Intermittent Illumination
M. Ichimura,R. Kobayashi, and T. Miyawaki
Jpn. J. Appl. Phys. 43 ( 9 ) L1196 - L1198 2004.04
Publishing type：Research paper (scientific journal)
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Preparation of ZnS Thin Films by the Pulsed Electrochemical Deposition Reviewed
N. Fathy, R. Kobayashi, M. Ichimura
Mater. Sci. Eng. B 107 ( 7 ) 271 - 276 2004.04
Language：English Publishing type：Research paper (scientific journal)
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Conduction type change with annealing in thin silicon-on-insulator wafers Reviewed
Y. Shibata , M. Ichimura and E. Arai
Solid-State Electronics 48 ( 7 ) 1249 - 1252 2004.04
Language：English Publishing type：Research paper (scientific journal)
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Growth of ZnSe Thin Films by Electrocrystallization Technique Reviewed
S. Soundeswaran, O. Senthil Kumar, R. Dhanasekaran, P. Ramasamy, R. Kumaresen and M. Ichimura
Materials Chemistry and Physics 82 ( 2 ) 268 - 272 2003.04
Language：English Publishing type：Research paper (scientific journal)
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Characterization of Deep Levels in 6H-SiC by Optical-Capacitance-Transient Spectroscopy Reviewed
Y. Nakakura, M. Kato, M. Ichimura, E. Arai, Y. Tokuda, and S. Nishino
J. Appl. Phys. 94 ( 7 ) 3233 - 3238 2003.04
Language：English Publishing type：Research paper (scientific journal)
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T. Kuwayama, M. Ichimura, and E. Arai
Appl. Phys. Lett. 83 ( 7 ) 928 - 930 2003.04
Language：English Publishing type：Research paper (scientific journal)
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As and Sb Diffusion Profiles in Thin Silicon-On-Insulator Wafers
Y. Shibata, T. Ichino, M. Ichimura and E. Arai
Jpn. J. Appl. Phys. 42 ( 7 ) 4282 - 4283 2003.04
Publishing type：Research paper (scientific journal)
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Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness Reviewed
M. Kato, M. Ichimura, E. Arai and P. Ramasamy
Jpn. J. Appl. Phys. 42 ( 7 ) 4233 - 4236 2003.04
Language：English Publishing type：Research paper (scientific journal)
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Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator Reviewed
E. Arai, D. Iida, H. Asai, Y. Ieki, H. Uchida, and M. Ichimura
Jpn. J. Appl. Phys. 42 ( 5 ) 1503 - 1510 2003.04
Language：English Publishing type：Research paper (scientific journal)
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Etch Pit Observation for 6H-SiC by Electrochemical Etching Using an Aqueous KOH Solution Reviewed
M. Kato, M. Ichimura, E. Arai, and P. Ramasamy
J. Electrochem. Soc 150 ( 4 ) C208 - C211 2003.04
Language：English Publishing type：Research paper (scientific journal)
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Sb Pile-up at Oxide/Si Interface during Drive-in Diffusion after Predeposition Using Doped Oxide Source Reviewed
T. Ichino, H. Uchida, M. Ichimura and E. Arai
Jpn. J. Appl. Phys 42 ( 3 ) 1139 - 1144 2003.04
Language：English Publishing type：Research paper (scientific journal)
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SnS Thin Films Fabricated by Pulsed and Normal Electrochemical Deposition Reviewed
K. Takeuchi, M. Ichimura, E. Arai, and Y. Yamazaki
Sol. Energy Mat. Sol. Cells 75 ( 6 ) 427 - 432 2003.04
Language：English Publishing type：Research paper (scientific journal)
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Photochemical deposition of ZnS thin films from C4H4KNaO6-added solutions Reviewed
R. Kobayashi, N. Sato, M. Ichimura, E. Arai
Journal of Optoelectronics and Advanced Materials 5 ( 4 ) 893 - 898 2003.04
Language：English Publishing type：Research paper (scientific journal)
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Deep Center Passivation in 3C-SiC by Hydrogen Plasma with a Grid for Damage Suppression Reviewed
M. Kato, F. Sobue, M. Ichimura, E. Arai, N. Yamada, Y. Tokuda and T. Okumura
Solid St. Electron. 46 ( 9 ) 2099 - 2104 2002.04
Language：English Publishing type：Research paper (scientific journal)
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Synthesis of PbS in Aqueous Solutions by Photochemical Reactions Reviewed
M. Ichimura, T. Narita, and K. Masui
Mater. Sci. Eng. B 96 ( 9 ) 296 - 299 2002.04
Language：English Publishing type：Research paper (scientific journal)
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Properties of Photochemically Deposited CdSe Films Reviewed
M. Ichimura, N. Sato, A. Nakamura, K. Takeuchi, and E. Arai
Physica Status Solidi (a) 193 ( 9 ) 132 - 138 2002.04
Language：English Publishing type：Research paper (scientific journal)
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Deposition of Amorphous SexTe1-x Thin Film Alloys by a Novel Photochemical Deposition Technique and Their Analysis
R. Kumaresan, M. Ichimura, N. Sato, P. Ramasamy, and E. Arai
J. Electrochem. Soc. 149 ( 9 ) C464 - C468 2002.04
Publishing type：Research paper (scientific journal)
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Application of Novel Photochemical Deposition Technique for the Deposition of Indium Sulfide Reviewed
R. Kumaresan, M. Ichimura, N. Sato, P. Ramasamy
Mater. Sci. Eng. B 96 ( 7 ) 37 - 42 2002.04
Language：English Publishing type：Research paper (scientific journal)
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Photochemical Deposition of ZnSe Polycrystalline Thin Films and Their Characterization Reviewed
R. Kumaresan, M. Ichimura and E. Arai
Thin Solid Films 414 ( 7 ) 25 - 30 2002.04
Language：English Publishing type：Research paper (scientific journal)
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Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality Reviewed
H. Uchida, M. Ichimura and E. Arai
Jpn. J. Appl. Phys. 41 ( 7 ) 4436 - 4441 2002.04
Language：English Publishing type：Research paper (scientific journal)
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M. Ichimura, A. Tada, E. Arai, H. Takamatsu, S. Sumie
Appl. Phys. Lett. 80 ( 23 ) 4390 - 4392 2002.04
Language：English Publishing type：Research paper (scientific journal)
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Preparation of (Bi, Sb)2S3 Semiconductor Films by Photochemical Deposition Method Reviewed
H. Sasaki, K. Shibayama, M. Ichimura and K. Masui
J. Cryst. Growth 237-239 ( 7A ) 2125 - 2129 2002.04
Language：English Publishing type：Research paper (scientific journal)
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Changes in Carrier Profiles of Bonded SOI Wafers with Thermal Annealing Measured by the Spreading Resistance Method Reviewed
M. Ichimura, S. Ito, and E. Arai
Solid St. Electron 46 ( 7A ) 545 - 553 2002.04
Language：English Publishing type：Research paper (scientific journal)
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Characterization of Si Wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photoconductivity Decay Method withSurface Electric Field Reviewed
A. Tada, M. Ichimura, E. Arai, H. Takamatsu, and S. Sumie
Jpn. J. Appl. Phys. 40 ( 5A ) 3069 - 3074 2001.04
Language：English Publishing type：Research paper (scientific journal)
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Photochemical Deposition of Se and CdSe from Aqueous Solutions Reviewed
M. Ichimura, A. Nakamura, K. Takeuchi, and E. Arai
Thin Solid Films 384 ( 4B ) 157 - 159 2001.04
Language：English Publishing type：Research paper (scientific journal)
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Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment Reviewed
M. Kato, F. Sobue, M. Ichimura, E. Arai, N. Yamada, Y. Tokuda, and T. Okumura
Jpn. J. Appl. Phys. 40 ( 4B ) 2983 - 2986 2001.04
Language：English Publishing type：Research paper (scientific journal)
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Electrical and Optical Properties of CdS Films Grown by Photochemical Deposition from Aqueous Solutions Reviewed
R. Kumaresan, M. Ichimura, K. Takahashi, K. Takeuchi, F. Goto, and E. Arai
Jpn. J. Appl. Phys. 40 ( 5A ) 3161 - 3162 2001.04
Language：English Publishing type：Research paper (scientific journal)
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Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane Reviewed
M. Kato, M. Ichimura, E. Arai, Y. Masuda, Y. Chen, S. Nishino, and Y. Tokuda
Jpn. J. Appl. Phys. 40 ( 8 ) 4943 - 4947 2001.04
Language：English Publishing type：Research paper (scientific journal)
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Sacrificial Anodic Oxidation of 6H-SiC Reviewed
M. Kato, M. Ichimura, and E. Arai
Jpn. J. Appl. Phys. 40 ( 11A ) L1145 - L1147 2001.04
Language：English Publishing type：Research paper (scientific journal)
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Quality Assessment of Bridgman Grown CdTe Single Crystals using Double Crystal X-ray Diffractometry (DCD) and Synchrotron Radiation
R Kumaresan, R. Gopalakrishnan, S. Moorth Babu, P. Ramasamy, P. Zaumseil, and, M Ichimura
J. Crystal. Growth 210 ( 11 ) 193 - 197 2000.04
Publishing type：Research paper (scientific journal)
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Retarded Diffusion of Phosphorus in Silicon-on-Insulator Structures Reviewed
H. Uchida, Y. Ieki, M. Ichimura, and E. Arai
Jpn. J. Appl. Phys. 39 ( 2B ) L137 - L140 2000.04
Language：English Publishing type：Research paper (scientific journal)
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Electrochemical Deposition of SnS Thin Films Reviewed
M. Ichimura, K. Takeuchi, Y. Ono, and E. Arai
Thin Solid Films 361-362 ( 12A ) 98 - 101 2000.04
Language：English Publishing type：Research paper (scientific journal)
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Characterization of Si Wafers by μ-PCD with Surface Electric Field Reviewed
M. Ichimura, M. Hirano, A. Tada, E. Arai, H. Takamatsu, and S. Sumie
Mater. Sci. Eng. B 73 ( 12A ) 230 - 234 2000.04
Language：English Publishing type：Research paper (scientific journal)
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Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers Reviewed
M. Hirano, M. Ichimura, and E. Arai
Jpn. J. Appl. Phys. 39 ( 12A ) 6513 - 6514 2000.04
Language：English Publishing type：Research paper (scientific journal)
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Deposition of CdS and ZnS from Aqueous Solutions by a New Photochemical Technique Reviewed
M. Ichimura, F. Goto, Y. Ono, and E. Arai
J. Cryst. Growth 198-199 ( 3 ) 308 - 312 1999.04
Language：English Publishing type：Research paper (scientific journal)
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Photochemical Deposition of CdS from Aqueous Solutions Reviewed
M. Ichimura, F. Goto, and E. Arai
J. Electrochem. Soc. 146 ( 3 ) 1028 - 1034 1999.04
Language：English Publishing type：Research paper (scientific journal)
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Control of Surface Recombination of Si Wafers by an External Electrode Reviewed
M. Ichimura, M. Hirano, N. Kato, E. Arai, H. Takamatsu, and S. Sumie
Jpn. J. Appl. Phys. 38 ( 3B ) L292 - L294 1999.04
Language：English Publishing type：Research paper (scientific journal)
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Structural and Optical Characterization of CdS Films Grown by Photochemical Deposition Reviewed
M. Ichimura, F. Goto, and E. Ara
J. Appl. Phys. 85 ( 10 ) 7411 - 7417 1999.04
Language：English Publishing type：Research paper (scientific journal)
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Search for Midgap Levels in 3C-SiC Grown on Si Substrates Reviewed
N. Yamada, M. Kato, M. Ichimura, E. Arai, and Y. Tokuda
Jpn. J. Appl. Phys. 38 ( 10A ) L1094 - L1095 1999.04
Language：English Publishing type：Research paper (scientific journal)
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Defect Reduction in Electrochemically Deposited CdS Thin Films by Annealing in O2 Reviewed
F. Goto, K. Shirai, and M. Ichimura
Solar Energy Mater. & Solar Cells 50 ( 1 ) 147 - 153 1998.04
Language：English Publishing type：Research paper (scientific journal)
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Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC Reviewed
M. Ichimura, Y. Koga, N. Yamada, T. Abe, E. Arai, and Y. Tokuda
Jpn. J. Appl. Phys. 37 ( 1 ) L18 - L20 1998.04
Language：English Publishing type：Research paper (scientific journal)
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Measurement of Minority Carrier Recombination Lifetime in Silicon Wafers by Measurement of Photoconductivity Decay by MicrowaveReflectance: Results of Round Robin Test Reviewed
M. Miyazaki, K. Kawai, and M. Ichimura
Recombination Lifetime Measurements in Silicon 84 ( 5 ) 347 - 366 1998.04
Language：English Publishing type：Research paper (other academic)
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Slow Photoconductivity Decay in 3C-SiC on Si Substrates Reviewed
M. Ichimura, N. Yamada, H. Tajiri, and E. Arai
J. Appl. Phys. 84 ( 5 ) 2727 - 2731 1998.04
Language：English Publishing type：Research paper (scientific journal)
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Temperature Dependence of Carrier Recombination Lifetime in Si Wafers Reviewed
M. Ichimura, H. Tajiri, T. Ito, and E. Arai
J. Electrochem. Soc. 145 ( 9 ) 3265 - 3271 1998.04
Language：English Publishing type：Research paper (scientific journal)
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Excess Carrier Lifetime of 3C-SiC Measured by the Microwave Photoconductivity Decay Method Reviewed
M. Ichimura, H. Tajiri, Y. Morita, N. Yamada, and A. Usami
Appl. Phys. Lett. 70 ( 13 ) 1745 - 1747 1997.04
Language：English Publishing type：Research paper (scientific journal)
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Characterization of Thin Bonded Silicon-on-Insulator Structures by the Microwave Photoconductivity Decay Method
M. Ichimura, T. Makino, H. Asakura, A. Usami, E. Morita, and E. Arai
Jpn. J. Appl. Phys. 36 ( 7A ) L839 - L841 1997.04
Publishing type：Research paper (scientific journal)
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Contactless Evaluation of the Surface Recombination Velocity at High-Low Junction Surface Fabricated by the Ion-Implantation Technique Reviewed
T. Makino, M. Ichimura, H. Yoshida, E. Morita, and A. Usami
Jpn. J. Appl. Phys. 36 ( 2 ) 601 - 604 1997.04
Language：English Publishing type：Research paper (scientific journal)
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A New Technique of Compound Semiconductor Deposition from an Aqueous Solution by Photochemical Reactions Reviewed
F. Goto, M. Ichimura, and E. Arai
Jpn. J. Appl. Phys. 36 ( 9 ) L1146 - L1149 1997.04
Language：English Publishing type：Research paper (scientific journal)
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Raman and Photoluminescence Characterizations of Electrochemically Deposited ZnxCd1-xS Layers Reviewed
M. Ichimura, T. Furukawa, K. Shirai, and F. Goto
Mater. Lett. 33 ( 1 ) 51 - 55 1997.04
Language：English Publishing type：Research paper (scientific journal)
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Stillinger-Weber Potentials for III-V Compound Semiconductors and Their Application to the Critical Thickness Calculation for InAs/GaAs Reviewed
M. Ichimura
Phys. Stat. Sol. (a) 153 ( 3 ) 431 - 437 1996.04
Language：English Publishing type：Research paper (scientific journal)
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Atomistic Study of Partial Dislocations in Ge/Si (001) Heterostructures Reviewed
M. Ichimura and J. Narayan
Phil. Mag. A 73 ( 3 ) 767 - 778 1996.04
Language：English Publishing type：Research paper (scientific journal)
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Relationship between Raman Spectra and Crystallinity of CdS Films Grown by Cathodic Electrodeposition Reviewed
K. Shirai, Y. Moriguchi, M. Ichimura, A. Usami, and M. Saji
Jpn. J. Appl. Phys. 35 ( 4 ) 2057 - 2060 1996.04
Language：English Publishing type：Research paper (scientific journal)
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Effects of an Ultrathin Inserted Si Layer on Dislocation Nucleation in Ge/Si Heterostructures Reviewed
M. Ichimura
Jpn. J. Appl. Phys. 35 ( 5B ) L609 - L611 1996.04
Language：English Publishing type：Research paper (scientific journal)
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Surface Condition of Si Implanted GaAs Revealed by the Noncontact Laser/Microwave Method Reviewed
M. Ichimura, H. Yoshida, and A. Usami
J. Electron. Mater. 25 ( 7 ) 1088 - 1092 1996.04
Language：English Publishing type：Research paper (scientific journal)
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Photoluminescence and Raman Scattering of Electrochemically Deposited CdS Films Reviewed
K. Shirai, F. Goto, and M. Ichimura
Jpn. J. Appl. Phys. 35 ( 11B ) L1483 - L1485 1996.04
Language：English Publishing type：Research paper (scientific journal)
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Evaluation of the Bonded Silicon on Insulator (SOI) Wafer and the Characteristics of PIN Photodiodes on the Bonded SOI Wafer Reviewed
A. Usami, K. Kaneko, Y. Fujii, and M. Ichimura
IEEE Trans. Electron Devices, 42 ( 2 ) 239 - 243 1995.04
Language：English Publishing type：Research paper (scientific journal)
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Atomistic Study of Dislocation Nucleation in Ge/(001)Si Heterostructures Reviewed
M. Ichimura and J. Narayan
Phil. Mag. A 72 ( 2 ) 281 - 295 1995.04
Language：English Publishing type：Research paper (scientific journal)
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Characterization of GaAs Heterolayers by Micro-Raman Spectroscopy Reviewed
M. Ichimura, Y. Moriguchi, A. Usami, M. Tabuchi, and A. Sasaki
J. Cryst. Growth 149 ( 10 ) 167 - 174 1995.04
Language：English Publishing type：Research paper (scientific journal)
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Raman Study of Strain Relaxation in Ge on Si Reviewed
M. Ichimura, A. Usami, A. Wakahara, and A. Sasaki
J. Appl. Phys. 77 ( 10 ) 5144 - 5148 1995.04
Language：English Publishing type：Research paper (scientific journal)
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Raman Spectra of GaAs with Ultrathin InAs Layers Inserted Reviewed
M. Ichimura, A. Usami, M. Tabuchi, and A. Sasaki
Phys. Rev. B 51 ( 19 ) 13231 - 13237 1995.04
Language：English Publishing type：Research paper (scientific journal)
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Role of Surface Step on Misfit Dislocation Nucleation and Critical Thickness in Semiconductor Heterostructures Reviewed
M. Ichimura and J. Narayan
Mater. Sci. Eng. B 31 ( 2 ) 299 - 303 1995.04
Language：English Publishing type：Research paper (scientific journal)
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Negative Surface Energy Change Associated with Step Formation Caused by Misfit Dislocation Nucleation in Semiconductor Heterostructures Reviewed
M. Ichimura and J. Narayan
Phil. Mag. A 72 ( 2 ) 297 - 304 1995.04
Language：English Publishing type：Research paper (scientific journal)
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Raman Study of Misfit Strain Relaxation during Heteroepitaxial Growths Reviewed
M. Ichimura, A. Usami, T. Wada, and A. Sasaki
J. Jpn. Assoc. Crystal Growth Vol.21 ( 5 ) S415 - S419 1994.04
Language：Japanese Publishing type：Research paper (scientific journal)
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Liquid-Phase Epitaxy of Highly-Lattice-Mismatched InxGa1-xAs Layers on (001) GaAs Substrates Reviewed
M. Ichimura, S. Nakatani, A. Usami, and T. Wada
Mater. Lett. Vol.18 ( 12 ) 269 - 272 1994.04
Language：English Publishing type：Research paper (scientific journal)
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A. Usami, M. Ichimura, T. Wada, and S. Ishigami
J. Appl. Phys. 75 ( 12 ) 7866 - 7868 1994.04
Language：English Publishing type：Research paper (scientific journal)
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Optical Characterization of GaSb-Based Ternary and Quaternary Alloys Grown by Liquid Phase Epitaxy at Low Temperatures Reviewed
M. Ichimura, K. Kato, H. Uekita, N. Kitamura, A. Usami, and T. Wada
Jpn. J. Appl. Phys. 32 ( 9 ) 3707 - 37112 1993.04
Language：English Publishing type：Research paper (scientific journal)
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Stabilization of Li Acceptors in ZnSe by Above-Band-Gap Photoirradiation Reviewed
M. Ichimura, T. Wada, Sz. Fujita, and Sg. Fujita
J. Appl. Phys. 73 ( 11 ) 7225 - 7228 1993.04
Language：English Publishing type：Research paper (scientific journal)
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M. Ichimura, A. Usami, T. Wada, Sz. Fujita, and Sg. Fujita
Appl. Phys. Lett. 62 ( 15 ) 1800 - 1802 1993.04
Language：English Publishing type：Research paper (scientific journal)
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Thermodynamic Model for the Annealing Process of Si-Implanted GaAs Reviewed
M. Ichimura, A. Usami, and T. Wada
Modelling Simul. Mater. Sci. Eng. 1 ( 7 ) 529 - 538 1993.04
Language：English Publishing type：Research paper (scientific journal)
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Micro-Raman Characterization of Molecular-Beam Epitaxial Ge Heterolayers on Si Substrates Reviewed
M. Ichimura, Y. Moriguchi, A. Usami, T. Wada, A. Wakahara and A. Sasaki
J. Electron. Mater. 22 ( 7 ) 779 - 784 1993.04
Language：English Publishing type：Research paper (scientific journal)
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Micro-Raman Study on GaAs Layers Directly Grown on (100) Si by Molecular Beam Epitaxy Reviewed
A. Ito, M. Ichimura, A. Usami, T. Wada, and H. Kano
J. Appl. Phys. 72 ( 6 ) 2531 - 2533 1992.04
Language：English Publishing type：Research paper (scientific journal)
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Micro-Raman Characterization of a Ge/Si Heterostructure Grown by Chemical Vapor Deposition Reviewed
M. Ichimura, Y. Moriguchi, A. Usami, and T. Wada
IEICE Trans. Electron. E75-C ( 9 ) 1056 - 1062 1992.04
Language：English Publishing type：Research paper (scientific journal)
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Extremely Low-Temperature LPE Growth of AlxGa1-x-yInySb Reviewed
K. Kato, H. Uekita, M. Ichimura, N. Kitamura, A. Usami, and T. Wada
Materials Letters 13 ( 3 ) 93 - 95 1992.04
Language：English Publishing type：Research paper (scientific journal)
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Reduction of Compensating Defects in ZnSe and ZnS by Photo-Irradiation Reviewed
M. Ichimura, T. Wada, Sz. Fujita, and Sg. Fujita
J. Cryst. Growth 117 ( 3 ) 689 - 693 1992.04
Language：English Publishing type：Research paper (scientific journal)
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Micro-Raman Study of Heteroepitaxial InGaAs Layers Reviewed
M. Ichimura, Y. Moriguchi, A. Usami, T. Wada, M. Tabuchi, and A. Sasaki
J. Cryst. Growth 121 ( 3 ) 423 - 428 1992.04
Language：English Publishing type：Research paper (scientific journal)
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Calculation of Point Defect Concentrations in GaAs Grown by Molecular Beam Epitaxy Reviewed
M. Ichimura and T. Wada
J. Appl. Phys. 72 ( 3 ) 1200 - 1202 1992.04
Language：English Publishing type：Research paper (scientific journal)
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Raman Spectra of Cubic Zn1-xCdxS Reviewed
M. Ichimura, A. Usami, T. Wada, M. Funato, K. Ichino, Sz. Fujita, and Sg. Fujita
Phys. Rev. B 72 ( 7 ) 4273 - 4276 1992.04
Language：English Publishing type：Research paper (scientific journal)
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Point Defect Concentrations in InGaAsP Quaternary Alloys Reviewed
M. Ichimura and T. Wada
J. Appl. Phys. 69 ( 7 ) 4140 - 4142 1991.04
Language：English Publishing type：Research paper (scientific journal)
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Crystalline Quality of Extremely-Low-Temperature Grown LPE-GaSb
N. Kitamura, H. Uekita, M. Ichimura, A. Usami, and T. Wada
Materials Letters 10 ( 9 ) 10,417 - 420 1991.04
Publishing type：Research paper (scientific journal)
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Thermodynamic Calculation of Native Defect Concentrations in III-V Alloy Semiconductors Grown by Halide Transport Vapor-Phase Epitaxy Reviewed
M. Ichimura and T. Wada
J. Electrochem. Soc. 138 ( 7 ) 2097 - 2102 1991.04
Language：English Publishing type：Research paper (scientific journal)
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A Defect Model for Photoirradiated Semiconductors -Suppression of the Self-compensation in II-VI Materials- Reviewed
M. Ichimura, T. Wada, Sz. Fujita, and Sg. Fujita
Jpn. J. Appl. Phys. 30 ( 12 ) 3475 - 3481 1991.04
Language：English Publishing type：Research paper (scientific journal)
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Calculation of Native Defect Concentrations in GaAs Grown by Organometallic Vapor-Phase Epitaxy Reviewed
M. Ichimura and T. Wada
J. Cryst. Growth 115 ( 3 ) 479 - 483 1991.04
Language：English Publishing type：Research paper (scientific journal)
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Native Defects in AlxGa1-xSb Alloy Semiconductor Reviewed
M. Ichimura, K. Higuchi, Y. Hattori, T. Wada, and N. Kitamura,
J. Appl. Phys. 68 ( 12 ) 6153 - 6158 1990.04
Language：English Publishing type：Research paper (scientific journal)
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Photoluminescence Study of AlxGa1-xSb Grown by Liquid-Phase Epitaxy Reviewed
N. Kitamura, K. Higuchi, H. Uekita, M. Ichimura, A. Usami, and T. Wada
Jpn. J. Appl. Phys. 29 ( 8 ) 1403 - 1407 1990.04
Language：English Publishing type：Research paper (scientific journal)
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Calculation of Bond Lengths in Si1-xGex Alloys Based on the Valence-Force-Field Model Reviewed
M. Ichimura, Y. Nishino, H. Kajiyama, and T. Wada
Jpn. J. Appl. Phys. 29 ( 5 ) 842 - 843 1990.04
Language：English Publishing type：Research paper (scientific journal)
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Native Defects in III-V Ternary Alloy Semiconductors Grown from Liquid- Solutions Reviewed
M. Ichimura and T. Wada
Jpn. J. Appl. Phys. 291515 ( 8 ) 1515 - 1520 1990.04
Language：English Publishing type：Research paper (scientific journal)
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Crystalline Microstructure of III-V Quaternary Alloy Semiconductors Reviewed
M. Ichimura and A. Sasaki
J. Cryst. Growth 98 ( 5 ) 18 - 26 1989.04
Language：English Publishing type：Research paper (scientific journal)
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Chemical Potentials of Constituent Compounds in III-V Alloy Semiconductors Reviewed
M. Ichimura and T. Wada
J. Cryst. Growth 97 ( 5 ) 542 - 550 1989.04
Language：English Publishing type：Research paper (scientific journal)
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Average Lengths and Statistics of Bonds in In1-xGaxAs1-yPy Quaternary Alloy Semiconductor Reviewed
M. Ichimura and A. Sasaki
Jpn. J. Appl. Phys. 27 ( 10 ) 1910 - 1915 1988.04
Language：English Publishing type：Research paper (scientific journal)
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Crystalline Microstructure of Alloy Semiconductors Reviewed
A. Sasaki and M. Ichimura
J. Crystallographic Society of Japan Vol.30 ( 6 ) 311 - 321 1988.04
Language：Japanese Publishing type：Research paper (other academic)
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Solution Hardening due to a Nonrandom Atom Arrangement in III-V Ternary Alloy Semiconductors Reviewed
M. Ichimura and A. Sasaki
Jpn. J. Appl. Phys. 27 ( 2 ) L176 - L178 1988.04
Language：English Publishing type：Research paper (scientific journal)
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Atom Arrangement in III-V Quaternary Alloy Semiconductors of (ABC)D Type Reviewed
M. Ichimura and A. Sasaki
Jpn. J. Appl. Phys. 27 ( 4 ) 642 - 648 1988.04
Language：English Publishing type：Research paper (scientific journal)
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Bond Statistics and Their Influences on Materials Properties of III-V Quaternary Alloys of Type (AB)III(CD)V
M. Ichimura and A. Sasaki
J. Electron. Mater. 17 ( 4 ) 305 - 310 1988.04
Publishing type：Research paper (scientific journal)
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AlGaSb Single, Double and Multiple Heterostructures Grown by Liquid-Phase Epitaxy and Their Photoluminescence Properties Reviewed
M. Ichimura, Y. Takeda, and A. Sasaki,
Jpn. J. Appl. Phys. 27 ( 8 ) 1464 - 1468 1988.04
Language：English Publishing type：Research paper (scientific journal)
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Bonds in III-V Quaternary Alloy Semiconductors of A1-xBxC1-yDy Type Reviewed
M. Ichimura and A. Sasaki
Phys. Rev. B 36 ( 18 ) 9694 - 9702 1987.04
Language：English Publishing type：Research paper (scientific journal)
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Calculation of Bond Lengths in InGaAsP Quaternary Alloy Semiconductor Reviewed
M. Ichimura and A. Sasaki
Jpn. J. Appl. Phys. 26 ( 2 ) 246 - 251 1987.04
Language：English Publishing type：Research paper (scientific journal)
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Statistics of Primitive Cells in InGaAs and AlGaAs Ternary Alloy Semiconductors
A.Sasaki and M. Ichimura
Superlattices and Microstructures 3 ( 2 ) 127 - 131 1987.04
Publishing type：Research paper (scientific journal)
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Alloy Scattering Mobility in III-V Ternary Alloy Semiconductors with Nonrandom Atom Arrangement Reviewed
M. Ichimura and A. Sasaki
Jpn. J. Appl. Phys. 26 ( 5 ) 776 - 777 1987.04
Language：English Publishing type：Research paper (scientific journal)
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Average Bond Lengths and Atom Arrangement in In1-xGaxAs and GaAs1-xPx III-V Ternary Alloy Semiconductors Reviewed
M. Ichimura and A. Sasaki
Jpn. J. Appl. Phys. 26 ( 8 ) 1296 - 1299 1987.04
Language：English Publishing type：Research paper (scientific journal)
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Bond Lengths in III-V Ternary Alloy Semiconductors Reviewed
M. Ichimura and A. Sasaki
Jpn. J. Appl. Phys. 26 ( 12 ) 2061 - 2066 1987.04
Language：English Publishing type：Research paper (scientific journal)
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Short-Range Order in III-V Ternary Alloy Semiconductors Reviewed
M. Ichimura and A. Sasaki
J. Appl. Phys. 60 ( 11 ) 3850 - 3855 1986.04
Language：English Publishing type：Research paper (scientific journal)
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Free Energies and Equilibrium States of Mono- and Bi-Layer Superstructures of III-V Ternary Alloy Semiconductors Reviewed
M. Ichimura and A. Sasaki
Jpn. J. Appl. Phys. 25 ( 7 ) 976 - 980 1986.04
Language：English Publishing type：Research paper (scientific journal)
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Predicted Extremely High Mobilities of Two-Dimensional Electrons in AlGaSb/GaSb and AlInAsSb/InAs Single Heterostructures Reviewed
Y. Takeda, M. Ichimura, and A. Sasaki
Jpn. J. Appl. Phys. 24 ( 6 ) L455 - L456 1985.04
Language：English Publishing type：Research paper (scientific journal)
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