Papers - ICHIMURA Masaya

Atomistic Study of Dislocation Nucleation in Ge/(001)Si Heterostructures Reviewed

M. Ichimura and J. Narayan

Phil. Mag. A   72 ( 2 )   281 - 295   1995.04

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Characterization of GaAs Heterolayers by Micro-Raman Spectroscopy Reviewed

M. Ichimura, Y. Moriguchi, A. Usami, M. Tabuchi, and A. Sasaki

J. Cryst. Growth   149 ( 10 )   167 - 174   1995.04

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Raman Study of Strain Relaxation in Ge on Si Reviewed

M. Ichimura, A. Usami, A. Wakahara, and A. Sasaki

J. Appl. Phys.   77 ( 10 )   5144 - 5148   1995.04

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Raman Spectra of GaAs with Ultrathin InAs Layers Inserted Reviewed

M. Ichimura, A. Usami, M. Tabuchi, and A. Sasaki

Phys. Rev. B   51 ( 19 )   13231 - 13237   1995.04

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Role of Surface Step on Misfit Dislocation Nucleation and Critical Thickness in Semiconductor Heterostructures Reviewed

M. Ichimura and J. Narayan

Mater. Sci. Eng. B   31 ( 2 )   299 - 303   1995.04

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Negative Surface Energy Change Associated with Step Formation Caused by Misfit Dislocation Nucleation in Semiconductor Heterostructures Reviewed

M. Ichimura and J. Narayan

Phil. Mag. A   72 ( 2 )   297 - 304   1995.04

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Raman Study of Misfit Strain Relaxation during Heteroepitaxial Growths Reviewed

M. Ichimura, A. Usami, T. Wada, and A. Sasaki

J. Jpn. Assoc. Crystal Growth   Vol.21 ( 5 )   S415 - S419   1994.04

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Liquid-Phase Epitaxy of Highly-Lattice-Mismatched InxGa1-xAs Layers on (001) GaAs Substrates Reviewed

M. Ichimura, S. Nakatani, A. Usami, and T. Wada

Mater. Lett.   Vol.18 ( 12 )   269 - 272   1994.04

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Structural Characterization of a Bonded Silicon-on-Insulator Layer with Voids by micro-Raman Spectroscopy Reviewed

A. Usami, M. Ichimura, T. Wada, and S. Ishigami

J. Appl. Phys.   75 ( 12 )   7866 - 7868   1994.04

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Optical Characterization of GaSb-Based Ternary and Quaternary Alloys Grown by Liquid Phase Epitaxy at Low Temperatures Reviewed

M. Ichimura, K. Kato, H. Uekita, N. Kitamura, A. Usami, and T. Wada

Jpn. J. Appl. Phys.   32 ( 9 )   3707 - 37112   1993.04

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Stabilization of Li Acceptors in ZnSe by Above-Band-Gap Photoirradiation Reviewed

M. Ichimura, T. Wada, Sz. Fujita, and Sg. Fujita

J. Appl. Phys.   73 ( 11 )   7225 - 7228   1993.04

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Observation of Phonon-Plasmon Coupled Modes at the Interface between ZnSe and Semi-insulating GaAs by Micro-Raman Spectroscopy Reviewed

M. Ichimura, A. Usami, T. Wada, Sz. Fujita, and Sg. Fujita

Appl. Phys. Lett.   62 ( 15 )   1800 - 1802   1993.04

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Thermodynamic Model for the Annealing Process of Si-Implanted GaAs Reviewed

M. Ichimura, A. Usami, and T. Wada

Modelling Simul. Mater. Sci. Eng.   1 ( 7 )   529 - 538   1993.04

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Micro-Raman Characterization of Molecular-Beam Epitaxial Ge Heterolayers on Si Substrates Reviewed

M. Ichimura, Y. Moriguchi, A. Usami, T. Wada, A. Wakahara and A. Sasaki

J. Electron. Mater.   22 ( 7 )   779 - 784   1993.04

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Micro-Raman Study on GaAs Layers Directly Grown on (100) Si by Molecular Beam Epitaxy Reviewed

A. Ito, M. Ichimura, A. Usami, T. Wada, and H. Kano

J. Appl. Phys.   72 ( 6 )   2531 - 2533   1992.04

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Micro-Raman Characterization of a Ge/Si Heterostructure Grown by Chemical Vapor Deposition Reviewed

M. Ichimura, Y. Moriguchi, A. Usami, and T. Wada

IEICE Trans. Electron.   E75-C ( 9 )   1056 - 1062   1992.04

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Extremely Low-Temperature LPE Growth of AlxGa1-x-yInySb Reviewed

K. Kato, H. Uekita, M. Ichimura, N. Kitamura, A. Usami, and T. Wada

Materials Letters   13 ( 3 )   93 - 95   1992.04

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Reduction of Compensating Defects in ZnSe and ZnS by Photo-Irradiation Reviewed

M. Ichimura, T. Wada, Sz. Fujita, and Sg. Fujita

J. Cryst. Growth   117 ( 3 )   689 - 693   1992.04

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Micro-Raman Study of Heteroepitaxial InGaAs Layers Reviewed

M. Ichimura, Y. Moriguchi, A. Usami, T. Wada, M. Tabuchi, and A. Sasaki

J. Cryst. Growth   121 ( 3 )   423 - 428   1992.04

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Calculation of Point Defect Concentrations in GaAs Grown by Molecular Beam Epitaxy Reviewed

M. Ichimura and T. Wada

J. Appl. Phys.   72 ( 3 )   1200 - 1202   1992.04

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