Papers - ICHIMURA Masaya

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  • Growth and characterization of pure and doped KY(WO4)2 crystals Reviewed

    A.Senthil Kumaran, A.L. Chandru, S.M. Babu, and M. Ichimura

    J. Cryst. Growth   275   e1901 - e1905   2005.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Photochemical deposition of CuxS thin films from aqueous solutions Reviewed

    J. Podder, R. Kobayashi, and M. Ichimura

    J. Cryst. Growth   275   e937 - e942   2005.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Characteriztion of Electrical Properties and Photosensitivity of SnS Thin Films Prepared by the Electrochemical Deposition Method Reviewed

    N. Sato, M. Ichimura, E. Arai and Y. Yamazaki

    Solar Energy Mater. Solar Cells   85 ( 2 )   153 - 165   2005.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Fabrication of SnO2 Thin Films by a Photochemical Deposition Method Reviewed

    M. Ichimura , K. Shibayama and K. Masui

    Thin Solid Films   466 ( 1-2 )   34 - 36   2004.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Photochemical Deposition of ZnS Thin Films by Intermittent Illumination

    M. Ichimura,R. Kobayashi, and T. Miyawaki

    Jpn. J. Appl. Phys.   43 ( 9 )   L1196 - L1198   2004.04

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  • Preparation of ZnS Thin Films by the Pulsed Electrochemical Deposition Reviewed

    N. Fathy, R. Kobayashi, M. Ichimura

    Mater. Sci. Eng. B   107 ( 7 )   271 - 276   2004.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Conduction type change with annealing in thin silicon-on-insulator wafers Reviewed

    Y. Shibata , M. Ichimura and E. Arai

    Solid-State Electronics   48 ( 7 )   1249 - 1252   2004.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Growth of ZnSe Thin Films by Electrocrystallization Technique Reviewed

    S. Soundeswaran, O. Senthil Kumar, R. Dhanasekaran, P. Ramasamy, R. Kumaresen and M. Ichimura

    Materials Chemistry and Physics   82 ( 2 )   268 - 272   2003.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Characterization of Deep Levels in 6H-SiC by Optical-Capacitance-Transient Spectroscopy Reviewed

    Y. Nakakura, M. Kato, M. Ichimura, E. Arai, Y. Tokuda, and S. Nishino

    J. Appl. Phys.   94 ( 7 )   3233 - 3238   2003.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Interface Recombination Velocity of Silicon-on-Insulator Wafers Measured by Microwave Reflectance Photoconductivity Decay Method with Electric Field Reviewed

    T. Kuwayama, M. Ichimura, and E. Arai

    Appl. Phys. Lett.   83 ( 7 )   928 - 930   2003.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • As and Sb Diffusion Profiles in Thin Silicon-On-Insulator Wafers

    Y. Shibata, T. Ichino, M. Ichimura and E. Arai

    Jpn. J. Appl. Phys.   42 ( 7 )   4282 - 4283   2003.04

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  • Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness Reviewed

    M. Kato, M. Ichimura, E. Arai and P. Ramasamy

    Jpn. J. Appl. Phys.   42 ( 7 )   4233 - 4236   2003.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator Reviewed

    E. Arai, D. Iida, H. Asai, Y. Ieki, H. Uchida, and M. Ichimura

    Jpn. J. Appl. Phys.   42 ( 5 )   1503 - 1510   2003.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Etch Pit Observation for 6H-SiC by Electrochemical Etching Using an Aqueous KOH Solution Reviewed

    M. Kato, M. Ichimura, E. Arai, and P. Ramasamy

    J. Electrochem. Soc   150 ( 4 )   C208 - C211   2003.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Sb Pile-up at Oxide/Si Interface during Drive-in Diffusion after Predeposition Using Doped Oxide Source Reviewed

    T. Ichino, H. Uchida, M. Ichimura and E. Arai

    Jpn. J. Appl. Phys   42 ( 3 )   1139 - 1144   2003.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • SnS Thin Films Fabricated by Pulsed and Normal Electrochemical Deposition Reviewed

    K. Takeuchi, M. Ichimura, E. Arai, and Y. Yamazaki

    Sol. Energy Mat. Sol. Cells   75 ( 6 )   427 - 432   2003.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Photochemical deposition of ZnS thin films from C4H4KNaO6-added solutions Reviewed

    R. Kobayashi, N. Sato, M. Ichimura, E. Arai

    Journal of Optoelectronics and Advanced Materials   5 ( 4 )   893 - 898   2003.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Deep Center Passivation in 3C-SiC by Hydrogen Plasma with a Grid for Damage Suppression Reviewed

    M. Kato, F. Sobue, M. Ichimura, E. Arai, N. Yamada, Y. Tokuda and T. Okumura

    Solid St. Electron.   46 ( 9 )   2099 - 2104   2002.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Synthesis of PbS in Aqueous Solutions by Photochemical Reactions Reviewed

    M. Ichimura, T. Narita, and K. Masui

    Mater. Sci. Eng. B   96 ( 9 )   296 - 299   2002.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Properties of Photochemically Deposited CdSe Films Reviewed

    M. Ichimura, N. Sato, A. Nakamura, K. Takeuchi, and E. Arai

    Physica Status Solidi (a)   193 ( 9 )   132 - 138   2002.04

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    Language:English   Publishing type:Research paper (scientific journal)  

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