Papers - ICHIMURA Masaya

Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation Reviewed

M. Kato, K. Yoshihara, M. Ichimura, T. Hatayama, T. Ohshima

Jpn. J. Appl. Phys.   53   04EP09   2014.04

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Fabrication of Cu2O/γ-FeOOH heterojunction solar cells by electrodeposition Reviewed

J. J. M. Vequizo, M. Ichimura

Appl. Phys. Express   7   045501   2014.04

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DOI： 10.7567/APEX.7.045501

Epitaxial p-type SiC as a self-driven photocathode for water splitting Reviewed

M. Kato, T. Yasuda, K. Miyake, M. Ichimura, and T. Hatayama

Int. J. Hydrogen Energy   39   4845 - 4849   2014.03

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Electrochemical deposition of iron sulfide thin films and heterojunction diodes with zinc oxide Reviewed

S. Kawai, R. Yamazaki, S. Sobue, E. Okuno, and M. Ichimura

APL Matter   2 ( 3 )   032108   2014.03

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Electrodeposition and Characterization of g-FeOOH Thin Films from Oxygen-Bubbled Aqueous Iron Sulfate Solutions Reviewed

J. J. M. Vequizo and M. Ichimura

Appl. Phys. Express   6   125501   2013.12

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Efficiency of a solar cell with intermediate energy levels: An example study on hydrogen implanted Si solar cells Reviewed

M. Ichimura, H. Sakakibara, K. Wada, and M. Kato

J. Appl. Phys.   114 ( 11 )   114505   2013.09

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Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate Reviewed

M. Kato, A. Yoshida, M. Ichimura, H. Nagasawa

Physica Status Solidi A   210   1719 - 1725   2013.08

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Fabrication of TiO2/Cu2O heterojunction solar cells by electrophoretic deposition and electrodeposition Reviewed

M. Ichimura and Y. Kato

Mater. Sci. Semicond. Processing   16   1538 - 1541   2013.07

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Electrodeposition of Ga-O Thin Films from Aqueous Gallium Sulfate Solutions Reviewed

J. J. M. Vequizo and M. Ichimura

Jpn. J. Appl. Phys.   52 ( 7 )   075503   2013.07

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Heterostructure Solar Cells Based on Sol-Gel Deposited SnO2 and Electrochemically Deposited Cu2O Reviewed

A. Fukuda and M. Ichimura

Mater. Sci. Appl.   4 ( 6A )   1 - 4   2013.06

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Band Offsets at the ZnO/Cu2ZnSnS4 Interface Based on the First Principles Calculation Reviewed

Wujisiguleng Bao and M. Ichimura

Jpn. J. Appl. Phys.   52 ( 6 )   061203   2013.06

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Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of 4H-SiC Schottky Contacts Reviewed

M. Kato, M. Kimura, and M. Ichimura

Jpn. J. Appl. Phys.   52 ( 4 )   04CP02   2013.04

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H2O2 treatment of electrochemically deposited Cu2O thin films for enhancing optical absorption Reviewed

Y. Song and M. Ichimura

Int. J. Photoenergy   2013   738063   2013.02

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Structural, Optical, and Electrical Characterization of Spray Pyrolysed Indium Sulfide Thin Films Reviewed

F. Rahman, J. Podder, and M. Ichimura

Surface Review and Letters   20 ( 2 )   1350014   2013.02

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光化学堆積SnO2薄膜を用いた携帯式水素検出器の試作 Reviewed

オドンボリル、森口、市村

電気学会論文誌A   133 ( 1 )   28 - 29   2013.01

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Language：Japanese   Publishing type：Research paper (scientific journal)  

First Principles Study on Influences of Crystal Structure and Orientation on Band Offsets at the CdS/Cu2ZnSnS4 Interface Reviewed

Wujisiguleng Bao, M. Ichimura

Int. J. Photoenergy   2012   619812   2012.12

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Improvement of Electrochemically Deposited Cu2O/ZnO Heterojunction Solar Cells by Modulation of Deposition Current Reviewed

Y. Song and M. Ichimura

Jpn. J. Appl. Phys.   51   10NC39   2012.10

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Fabrication of Electrodeposited SnS/SnO2 Heterojunction Solar Cells Reviewed

J. J. M. Vequizo and M. Ichimura

Jpn. J. Appl. Phys.   51   10NC38   2012.10

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Prediction of the Band Offsets at the CdS/Cu2ZnSnS4 Interface Based on the First-Principles Calculation Reviewed

Wujisiguleng Bao and M. Ichimura

Jpn. J. Appl. Phys.   51   10NC31   2012.10

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Photochemical deposition of p-type transparent alloy semiconductor CuxZnyS Reviewed

Mandula, K. Yang, and M. Ichimura

Semicond. Sci. Technol.   27   125007   2012.10

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