Papers - ICHIMURA Masaya

Raman Spectra of Cubic Zn1-xCdxS Reviewed

M. Ichimura, A. Usami, T. Wada, M. Funato, K. Ichino, Sz. Fujita, and Sg. Fujita

Phys. Rev. B   72 ( 7 )   4273 - 4276   1992.04

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Point Defect Concentrations in InGaAsP Quaternary Alloys Reviewed

M. Ichimura and T. Wada

J. Appl. Phys.   69 ( 7 )   4140 - 4142   1991.04

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Crystalline Quality of Extremely-Low-Temperature Grown LPE-GaSb

N. Kitamura, H. Uekita, M. Ichimura, A. Usami, and T. Wada

Materials Letters   10 ( 9 )   10,417 - 420   1991.04

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Thermodynamic Calculation of Native Defect Concentrations in III-V Alloy Semiconductors Grown by Halide Transport Vapor-Phase Epitaxy Reviewed

M. Ichimura and T. Wada

J. Electrochem. Soc.   138 ( 7 )   2097 - 2102   1991.04

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A Defect Model for Photoirradiated Semiconductors -Suppression of the Self-compensation in II-VI Materials- Reviewed

M. Ichimura, T. Wada, Sz. Fujita, and Sg. Fujita

Jpn. J. Appl. Phys.   30 ( 12 )   3475 - 3481   1991.04

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Calculation of Native Defect Concentrations in GaAs Grown by Organometallic Vapor-Phase Epitaxy Reviewed

M. Ichimura and T. Wada

J. Cryst. Growth   115 ( 3 )   479 - 483   1991.04

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Native Defects in AlxGa1-xSb Alloy Semiconductor Reviewed

M. Ichimura, K. Higuchi, Y. Hattori, T. Wada, and N. Kitamura,

J. Appl. Phys.   68 ( 12 )   6153 - 6158   1990.04

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Photoluminescence Study of AlxGa1-xSb Grown by Liquid-Phase Epitaxy Reviewed

N. Kitamura, K. Higuchi, H. Uekita, M. Ichimura, A. Usami, and T. Wada

Jpn. J. Appl. Phys.   29 ( 8 )   1403 - 1407   1990.04

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Calculation of Bond Lengths in Si1-xGex Alloys Based on the Valence-Force-Field Model Reviewed

M. Ichimura, Y. Nishino, H. Kajiyama, and T. Wada

Jpn. J. Appl. Phys.   29 ( 5 )   842 - 843   1990.04

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Native Defects in III-V Ternary Alloy Semiconductors Grown from Liquid- Solutions Reviewed

M. Ichimura and T. Wada

Jpn. J. Appl. Phys.   291515 ( 8 )   1515 - 1520   1990.04

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Crystalline Microstructure of III-V Quaternary Alloy Semiconductors Reviewed

M. Ichimura and A. Sasaki

J. Cryst. Growth   98 ( 5 )   18 - 26   1989.04

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Chemical Potentials of Constituent Compounds in III-V Alloy Semiconductors Reviewed

M. Ichimura and T. Wada

J. Cryst. Growth   97 ( 5 )   542 - 550   1989.04

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Average Lengths and Statistics of Bonds in In1-xGaxAs1-yPy Quaternary Alloy Semiconductor Reviewed

M. Ichimura and A. Sasaki

Jpn. J. Appl. Phys.   27 ( 10 )   1910 - 1915   1988.04

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Crystalline Microstructure of Alloy Semiconductors Reviewed

A. Sasaki and M. Ichimura

J. Crystallographic Society of Japan   Vol.30 ( 6 )   311 - 321   1988.04

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Solution Hardening due to a Nonrandom Atom Arrangement in III-V Ternary Alloy Semiconductors Reviewed

M. Ichimura and A. Sasaki

Jpn. J. Appl. Phys.   27 ( 2 )   L176 - L178   1988.04

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Atom Arrangement in III-V Quaternary Alloy Semiconductors of (ABC)D Type Reviewed

M. Ichimura and A. Sasaki

Jpn. J. Appl. Phys.   27 ( 4 )   642 - 648   1988.04

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Bond Statistics and Their Influences on Materials Properties of III-V Quaternary Alloys of Type (AB)III(CD)V

M. Ichimura and A. Sasaki

J. Electron. Mater.   17 ( 4 )   305 - 310   1988.04

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AlGaSb Single, Double and Multiple Heterostructures Grown by Liquid-Phase Epitaxy and Their Photoluminescence Properties Reviewed

M. Ichimura, Y. Takeda, and A. Sasaki,

Jpn. J. Appl. Phys.   27 ( 8 )   1464 - 1468   1988.04

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Bonds in III-V Quaternary Alloy Semiconductors of A1-xBxC1-yDy Type Reviewed

M. Ichimura and A. Sasaki

Phys. Rev. B   36 ( 18 )   9694 - 9702   1987.04

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Calculation of Bond Lengths in InGaAsP Quaternary Alloy Semiconductor Reviewed

M. Ichimura and A. Sasaki

Jpn. J. Appl. Phys.   26 ( 2 )   246 - 251   1987.04

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