Papers - ICHIMURA Masaya

Control of Surface Recombination of Si Wafers by an External Electrode Reviewed

M. Ichimura, M. Hirano, N. Kato, E. Arai, H. Takamatsu, and S. Sumie

Jpn. J. Appl. Phys.   38 ( 3B )   L292 - L294   1999.04

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Structural and Optical Characterization of CdS Films Grown by Photochemical Deposition Reviewed

M. Ichimura, F. Goto, and E. Ara

J. Appl. Phys.   85 ( 10 )   7411 - 7417   1999.04

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Search for Midgap Levels in 3C-SiC Grown on Si Substrates Reviewed

N. Yamada, M. Kato, M. Ichimura, E. Arai, and Y. Tokuda

Jpn. J. Appl. Phys.   38 ( 10A )   L1094 - L1095   1999.04

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Defect Reduction in Electrochemically Deposited CdS Thin Films by Annealing in O2 Reviewed

F. Goto, K. Shirai, and M. Ichimura

Solar Energy Mater. & Solar Cells   50 ( 1 )   147 - 153   1998.04

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Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC Reviewed

M. Ichimura, Y. Koga, N. Yamada, T. Abe, E. Arai, and Y. Tokuda

Jpn. J. Appl. Phys.   37 ( 1 )   L18 - L20   1998.04

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Measurement of Minority Carrier Recombination Lifetime in Silicon Wafers by Measurement of Photoconductivity Decay by MicrowaveReflectance: Results of Round Robin Test Reviewed

M. Miyazaki, K. Kawai, and M. Ichimura

Recombination Lifetime Measurements in Silicon   84 ( 5 )   347 - 366   1998.04

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Slow Photoconductivity Decay in 3C-SiC on Si Substrates Reviewed

M. Ichimura, N. Yamada, H. Tajiri, and E. Arai

J. Appl. Phys.   84 ( 5 )   2727 - 2731   1998.04

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Temperature Dependence of Carrier Recombination Lifetime in Si Wafers Reviewed

M. Ichimura, H. Tajiri, T. Ito, and E. Arai

J. Electrochem. Soc.   145 ( 9 )   3265 - 3271   1998.04

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Excess Carrier Lifetime of 3C-SiC Measured by the Microwave Photoconductivity Decay Method Reviewed

M. Ichimura, H. Tajiri, Y. Morita, N. Yamada, and A. Usami

Appl. Phys. Lett.   70 ( 13 )   1745 - 1747   1997.04

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Characterization of Thin Bonded Silicon-on-Insulator Structures by the Microwave Photoconductivity Decay Method

M. Ichimura, T. Makino, H. Asakura, A. Usami, E. Morita, and E. Arai

Jpn. J. Appl. Phys.   36 ( 7A )   L839 - L841   1997.04

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Contactless Evaluation of the Surface Recombination Velocity at High-Low Junction Surface Fabricated by the Ion-Implantation Technique Reviewed

T. Makino, M. Ichimura, H. Yoshida, E. Morita, and A. Usami

Jpn. J. Appl. Phys.   36 ( 2 )   601 - 604   1997.04

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A New Technique of Compound Semiconductor Deposition from an Aqueous Solution by Photochemical Reactions Reviewed

F. Goto, M. Ichimura, and E. Arai

Jpn. J. Appl. Phys.   36 ( 9 )   L1146 - L1149   1997.04

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Raman and Photoluminescence Characterizations of Electrochemically Deposited ZnxCd1-xS Layers Reviewed

M. Ichimura, T. Furukawa, K. Shirai, and F. Goto

Mater. Lett.   33 ( 1 )   51 - 55   1997.04

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Stillinger-Weber Potentials for III-V Compound Semiconductors and Their Application to the Critical Thickness Calculation for InAs/GaAs Reviewed

M. Ichimura

Phys. Stat. Sol. (a)   153 ( 3 )   431 - 437   1996.04

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Atomistic Study of Partial Dislocations in Ge/Si (001) Heterostructures Reviewed

M. Ichimura and J. Narayan

Phil. Mag. A   73 ( 3 )   767 - 778   1996.04

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Relationship between Raman Spectra and Crystallinity of CdS Films Grown by Cathodic Electrodeposition Reviewed

K. Shirai, Y. Moriguchi, M. Ichimura, A. Usami, and M. Saji

Jpn. J. Appl. Phys.   35 ( 4 )   2057 - 2060   1996.04

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Effects of an Ultrathin Inserted Si Layer on Dislocation Nucleation in Ge/Si Heterostructures Reviewed

M. Ichimura

Jpn. J. Appl. Phys.   35 ( 5B )   L609 - L611   1996.04

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Surface Condition of Si Implanted GaAs Revealed by the Noncontact Laser/Microwave Method Reviewed

M. Ichimura, H. Yoshida, and A. Usami

J. Electron. Mater.   25 ( 7 )   1088 - 1092   1996.04

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Photoluminescence and Raman Scattering of Electrochemically Deposited CdS Films Reviewed

K. Shirai, F. Goto, and M. Ichimura

Jpn. J. Appl. Phys.   35 ( 11B )   L1483 - L1485   1996.04

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Evaluation of the Bonded Silicon on Insulator (SOI) Wafer and the Characteristics of PIN Photodiodes on the Bonded SOI Wafer Reviewed

A. Usami, K. Kaneko, Y. Fujii, and M. Ichimura

IEEE Trans. Electron Devices,   42 ( 2 )   239 - 243   1995.04

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