Papers - SOGA Tetsuo

MOCVD growth of III-V compounds on Si using strained superlattices Reviewed

Mat. Res Soc. Symp. Proc.   67 ( 2 )   15 - 27   1986.04

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Publishing type：Research paper (international conference proceedings)  

Epitaxial growth and material properties of GaAs on Si grown by MOCVD Reviewed

J. Crystal Growth   77 ( 8 )   498 - 502   1986.04

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MOCVD growth of GaAs1-xPx (x=0-1) and fabrication of GaAs0.6P0.4 LED on Si substrate Reviewed

Jpn. J. Appl. Phys   25 ( 9 )   1388 - 1392   1986.04

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Deep levels in GaAs grown using superlattice intermediate layers on Si substrate by MOCVD Reviewed

Jpn. J. Appl. Phys   25 ( 10 )   1510 - 1513   1986.04

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Band gap energy and stress of GaAs grown on Si by MOCVD Reviewed

Jpn. J. Appl. Phys   25 ( 11 )   1680 - 1683   1986.04

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GaAlAs/GaAs TJS lasers on Si substrates operating at room temperature fabricated by MOCVD Reviewed

Jpn. J. Appl. Phys.   25 ( 12 )   1957 - 1958   1986.04

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MOCVD growth of GaAsP on Si (100) substrate with GaP and strained layer superlattice

Proc. of Northeast Regional Meeting of The Metallugical Society   67 ( 2 )   207 - 217   1986.04

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Publishing type：Research paper (international conference proceedings)  

MOCVD growth of GaAs0.6P0.4 on Si substrate Reviewed

Jpn. J. Appl. Phys   25 ( 4 )   L297 - L298   1986.04

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Heteroepitaxial growth of III-V compounds on Si by MOCVD Reviewed

Inst. Phys. Conf. Ser.   48 ( 79 )   133 - 138   1986.04

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Publishing type：Research paper (international conference proceedings)  

Room temperature operation of AlGaAs/GaAs DH lasers on Si grown entirely by MOCVD Reviewed

Inst. Phys. Conf. Ser.   48 ( 79 )   751 - 752   1986.04

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Publishing type：Research paper (international conference proceedings)  

Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated by metalorganic chemical vapor deposition Reviewed

Appl. Phys. Lett.   48 ( 6 )   413 - 414   1986.04

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Characterization of epitaxially grown GaAs on Si substrates with III-V compounds intermediate layers by metalorganic chemical vapor deposition Reviewed

J. Appl. Phys.   57 ( 10 )   4578 - 4582   1985.05

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AlGaAs/GaAs DH lasers on Si substrates grown using super lattice buffer layers by MOCVD Reviewed

Jpn. J. Appl. Phys   24 ( 8 )   L666 - L668   1985.04

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MOCVD growth of GaAs on Si substrates with AlGaP and strained superlattice layers Reviewed

Electron. Lett.   20 ( 22 )   916 - 918   1984.10

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High temperature growth rate in MOCVD growth of AlGaAs Reviewed

J. Crystal Growth   68 ( 22 )   169 - 175   1984.09

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Mechanism of MOCVD growth for GaAs and AlAs Reviewed

Jpn. J. Appl. Phys   23 ( 6 )   709 - 713   1984.06

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Solid Composition and growth rate of Ga1-xAlxAs grown epitaxially by MOCVD Reviewed

Jpn. J. Appl. Phys.   22 ( 9 )   1357 - 1360   1983.04

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Publishing type：Research paper (scientific journal)