Papers - SOGA Tetsuo

Characterization of MOCVD-grown GaAs on Si by spectroscopic ellipsometry Reviewed

Appl. Surf. Sci.   100 ( 101/ )   617 - 620   1996.04

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Growth of high quality Al0.22Ga0.78As layers on Si substrates by metalorganic chemical vapor deposition Reviewed

J. Appl. Phys.   80 ( 7 )   4112 - 4115   1996.04

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Publishing type：Research paper (scientific journal)  

Structural and optical characterization of PbxTi1-xO2 film prepared by sol-gel method Reviewed

Materials Science and Engineering B   41 ( 12A )   67 - 71   1996.04

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Publishing type：Research paper (scientific journal)  

Assessment of the structural properties of GaAs/Si epilayers using x-ray (004) and (220) reflection Reviewed

Jpn. J. Appl. Phys   35 ( 12A )   6017 - 6018   1996.04

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Synchrotron-radiation-excited etching of silicon wafer enhanced by disk-shaped CF4 plasma Reviewed

J. Electrochem. Soc.   143 ( 12 )   4109 - 4112   1996.04

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Publishing type：Research paper (scientific journal)  

Photovoltaic properties of an AlxGa1-xAs solar cell (x=0-0.22) grown on Si substrate by metalorganic chemical vapor deposition and thermal cycle annealing Reviewed

J. Appl. Phys.   79 ( 12 )   9375 - 9378   1996.04

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Publishing type：Research paper (scientific journal)  

Synchrotron-radiation-induced deposition of etch-protecting film on Si in CF plasma Reviewed

Jpn. J. Appl. Phys   35 ( 2A )   765 - 766   1996.04

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High-efficiency monolithic three-terminal GaAs/Si tandem solar cells fabricated by metalorganic chemical vapor deposition Reviewed

Jpn. J. Appl. Phys.   35 ( 2B )   1401 - 1404   1996.04

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Publishing type：Research paper (scientific journal)  

A modified harmonic oscillator application scheme for the dielectric constants of GaAs, InP and GaP Reviewed

Jpn. J. Appl. Phys.   35 ( 3 )   1617 - 1623   1996.04

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Publishing type：Research paper (scientific journal)  

High efficiency AlGaAs/Si tandem solar cell over 20% Reviewed

Solar Energy Materials & Solar Cells   41 ( 42/ )   395 - 403   1996.04

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Novel low-cost solid-state heterojunction solar cell based on TiO2 and its modification for improved efficiency Reviewed

Jpn. J. Appl. Phys   35 ( 6A )   3334 - 3342   1996.04

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Highly c-axis aligned GaN thin film grown on Si using GaP intermediate layer by metalorganic chemical vapor deposition

H.Ishikawa, T.Soga, T.Nagatomo, T.Jimbo, M.Umeno

Proceedings of International Symposium on Blue Laser and Light Emitting Diodes   526 - 529   1996.03

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Language：English   Publishing type：Research paper (international conference proceedings)  

Theoretical performance study of n-TiO2/p-CuInSe2 solar cell and its modification for improved efficiency

Md M. Rahman, T. Soga, T. Jimbo, M. Umeno

名古屋工業大学紀要   47   229 - 233   1996.03

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Language：English   Publishing type：Research paper (bulletin of university, research institution)  

Molecular Beam Epitaxy of Gallium Antimonide

G.Y. Zhao, Y. Iwama, N. Sasaki, A. Oda, H. Ishikawa, T. Soga, T. Egawa, T. Jimbo, M. Umeno

名古屋工業大学紀要   47   235 - 238   1996.03

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Language：English   Publishing type：Research paper (bulletin of university, research institution)  

Crystal growth of GaN on GaP substrate using RF plasma assisted metalorganic chemical vapor deposition for blue emitting laser diode on Si

H.Ishikawa, M.Tsuchida, C.L.Shao, T.Soga, T.Jimbo, M.Umeno

Proceedings of the topical workshop on III-V nitrides   295 - 298   1995.09

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Language：English   Publishing type：Research paper (international conference proceedings)  

Nano-indentation characterization of InGaN thin films deposited onto sapphire substrate

R.Nowak, T.Soga, T.Nagatomo, S.Maruno, M.Umeno

Proceedings of the topical workshop on III-V nitrides   303 - 306   1995.09

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Language：English   Publishing type：Research paper (international conference proceedings)  

Room temperature defect etching of III-V compounds and alloys grown on Si substrate using hydrogen fluoride and nitric acid

Materials Science Forum   196-201 ( 2A )   1923 - 1926   1995.04

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Publishing type：Research paper (international conference proceedings)  

Growth and characterization of two-dimensional GaP on Si by metalorganic chemical vapor deposition Reviewed

J. Crystal Growth   146 ( 2A )   554 - 557   1995.04

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Characterization of strained GaP/Si heterostructure by spectroscopic ellipsometry Reviewed

Jpn. J. Appl. Phys.   34 ( 2A )   530 - 533   1995.04

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Reduction of dislocation density by thermal annealing for GaAs/GaSb/Si heterostructure Reviewed

J. Crystal Growth   150 ( 6 )   681 - 684   1995.04

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Publishing type：Research paper (scientific journal)