Papers - SOGA Tetsuo

Improvement of GaAs-on-Si solar cell by passivation

T. Soga, T. Ogawa, G. Wang, T. Jimbo, M. Umeno

Proc. 14th International Workshop on Radiation Effects on Semiconductor Devices for Space Application   43 - 48   2000.10

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Phosphine-added hydrogen plasma passivation of GaAs solar cell on Si substrate

T. Ogawa, G. Wang, K. Murase, K. Hori, J. Arokiaraj, T. Soga, T. Jimbo, M. Umeno

28th IEEE Photovoltaic Specialists Conference   1308 - 1311   2000.09

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Effect of sol processing parameters on dye-sensitized TiO2 solar cell by spin coating method Reviewed

Md. Mosaddeq, H. Tanaka, T. Soga, T. Jimbo, M. Umeno

28th IEEE Photovoltaic Specialists Conference   806 - 809   2000.09

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Bonding of GaN with Si using Selenium Sulphide (SeS2) and laser lift-off Reviewed

J.Arokiaraj, H.Ishikawa, T.Soga, T.Egawa, T.Jimbo, U.Umeno

Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1   754 - 757   2000.09

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Characterization of GaAs pn junction bonded on selenium sulphide (SeS2) treated Si substratre Reviewed

J. Arokiaraj, H. Taguchi, T. Soga, T. Jimbo, M. Umeno

28th IEEE Photovoltaic Specialists Conference   1281 - 1284   2000.09

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Carbon based photovoltaic solar cell : n-C/p-C junction on p-Si substrate Reviewed

M. Umeno, K.M.Krishna, Y. Tokita, T. Soga, T. Jimbo

28th IEEE Photovoltaic Specialists Conference   951 - 954   2000.09

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Raman spectra of ion beam sputtered amorphous carbon thin films deposited from camphoric carbon Reviewed

Carbon   38 ( 5 )   127 - 131   2000.04

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Stress reduction and structural quality improvement due to In doping in GaAs/Si Reviewed

Materials Science and Engineering B   68 ( 5 )   166 - 170   2000.04

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Hydrogen plasma passivation of GaAs on Si substrates for solar cell fabrication Reviewed

J. Appl. Phys.   87 ( 5 )   2285 - 5588   2000.04

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Impurity reduction and crystalline quality improvement due to isovalent doping (In) in GaAs epilayer on Si substrate by chemical beam epitaxy Reviewed

J. Crystal Growth   209 ( 6 )   621 - 624   2000.04

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Surface and bulk passivation of GaAs solar cell on Si substrate by H2 + PH3 plasma Reviewed

Appl. Phys. Lett.   76 ( 6 )   730 - 732   2000.04

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Amorphous carbon thin films for optoelectric device application Reviewed

Int. J. Mod. Phys. B   14 ( 9A/B )   206 - 217   2000.04

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Biased enhanced growth of nanocrystalline diamond films by microwave plasma chemical vapor deposition Reviewed

Diamond and Related Materials   9 ( 9A/B )   1331 - 1335   2000.04

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Hydrogenation of GaAs-on-Si Schottky diodes by PH3-added H2 plasma Reviewed

Appl. Surf. Sci.   159-160 ( 9A/B )   191 - 196   2000.04

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SeS2 assisted bonding of GaAs to Si - A new method for wafer bonding Reviewed

Appl. Surf. Sci.   159-160 ( 9A/B )   282 - 287   2000.04

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Electric Characteristics of GaAs Bonded to Si Using SeS2 Technique Reviewed

Jpn. J. Appl. Phys   39 ( 9A/B )   L911 - L913   2000.04

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Effect of Radio Frequency Power on the Properties of Hydrogenated Amorphous Carbon Films Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Reviewed

Jpn. J. Appl. Phys   39 ( 7A )   4088 - 4093   2000.04

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Enhanced spontaneous emission in hydrogen-plasma-passivated AlGaAs/GaAs vertical-cavity surface-emitting laser structures grown on Si substrate Reviewed

Electron. Lett.   36 ( 17 )   1462 - 1464   2000.04

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Low-temperature growth of GaAs polycrystalline films on glass substrates for space solar cell application Reviewed

J. Crystal Growth   221 ( 1 )   688 - 692   2000.04

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Photovoltaic and spectral photoresponse characteristics of n-C/p-C solar cell on a p-silicon substrate Reviewed

Appl. Phys. Lett.   77 ( 10 )   1472 - 1474   2000.04

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