Papers - SOGA Tetsuo

Characteristics of n-C:P/p-Si heterojunction solar cells

M. Rusop, T Soga, T. Jimbo

Proceedings of 3rd World Conference on Photovoltaic Energy Conversion, 2003.   192 - 195   2003.06

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Language：English   Publishing type：Research paper (international conference proceedings)  

Photovoltaic cells based on boron-doped amorphous carbon on n-Si prepared by rf plasma-enhanced chemical vapor deposition using trimethylboron

Y. Hayashi, T Soga, T. Jimbo

Proceedings of 3rd World Conference on Photovoltaic Energy Conversion, 2003.   151 - 154   2003.06

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Language：English   Publishing type：Research paper (international conference proceedings)  

Photovoltaic properties of boron-doped amorphous carbon on n-Si with C60 intermediate layer deposited by rf nitrogen plasma co-sputtering of graphite and boron

Y. Hayashi, T Soga, T. Jimbo

Proceedings of 3rd World Conference on Photovoltaic Energy Conversion, 2003.   144 - 147   2003.06

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Rectifying I-V Characteristics of n-Type Fluorine Implanted a-C/p-type Si Heterojunction Diode Reviewed

Jpn. J. Appl. Phys.   43 ( 1 )   L24 - 26   2003.04

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Fabrication of GaAs/Si Tandem Solar Cell by Epitaxial Lift-Off Technique Reviewed

Jpn. J. Appl. Phys.   42 ( 12A )   L1419 - 1421   2003.04

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Diamond Synthesized at Room Temperature by Pulsed Laser Deposition in Vacuum Reviewed

Jpn. J. Appl. Phys.   42 ( 10A )   L1164 - 1166   2003.04

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High-Radiation Resistance of GaAs Solar Cell on Si Substrate Following 1MeV Electron Irradiation Reviewed

Jpn. J. Appl. Phys.   42 ( 9 )   L1054 - 1056   2003.04

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Light-induced changes in the solar cell parameters and temperature coefficient of n-C/p-Si heterojunction solar cell Reviewed

Solar Energy Materials and Solar Cells   79 ( 8 )   305 - 311   2003.04

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Properties of Pulsed-Laser-Deposited CuI and Characteristics of Constructed Dye-Sensitized TiO2/Dye/CuI Solid-State Photovoltaic Solar Cells Reviewed

Jpn. J. Appl. Phys.   42 ( 1月8日 )   4966 - 4972   2003.04

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Ion Beam Induced Effects in RF Plasma Chemical Vapor Deposition Deposited Hydrogenated Amorphous Carbon Thin Films Reviewed

Jpn. J. Appl. Phys.   42 ( 8B )   L1021 - 1024   2003.04

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Characterization of CuI thin films prepared by different technique Reviewed

Materials Chemistry and Physics   80 ( 1月22日 )   461 - 465   2003.04

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Photovoltaic characteristics of boron-doped hydrogenated amorphous carbon on n-Si substrate prepared by r.f. plasma-enhanced CVD using trimethylboron Reviewed

Diamond and Related Materials   12 ( 1月22日 )   687 - 690   2003.04

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GaAs thin film on Si substrate transplanted from GaAs/Ge structure by direct bonding Reviewed

Appl. Phys. Lett.   82 ( 22 )   3892 - 3894   2003.04

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Studies on Dark and Photo Conductivity of Poly[2-methoxy, 5-(2'-ethylhexl-oxy)-p-phenylene vinylene]:C60 Thin Films Reviewed

Jpn. J. Appl. Phys.   42 ( 4B )   2498 - 2502   2003.04

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Characterization of Phosphorous-Doped Amorphous Carbon and Construction of n-Carbon/p-Silicon Heterojunction Solar Cells Reviewed

Jpn. J. Appl. Phys.   42 ( 4B )   2339 - 2344   2003.04

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An approach for utilization of organic polymer as a sensitizer in solid-state cells Reviewed

Solar Energy Materials and Solar Cells   77 ( 11 )   15 - 24   2003.04

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A photovoltaic cell from p-type boron-doped amorphous carbon film Reviewed

Solar Energy Materials and Solar Cells   77 ( 11 )   105 - 112   2003.04

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Infrared ellipsometry of GaAs epilayers on Si (100) Reviewed

Appl. Phys. Lett.   82 ( 11 )   1730 - 1732   2003.04

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Photovoltaic Properties of Boron-Incorporated Amorphous Carbon on n-Si Heterojunction Grown by Radio Frequency Plasma-Enhanced Chemical Vapor Deposition Using Trimethlboron Reviewed

Jpn. J. Appl. Phys.   42 ( 3B )   L273 - 276   2003.04

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Identification of various luminescence centers in CuI films by cathodoluminescence Reviewed

J. Luminescence   105 ( 6 )   105 - 109   2003.04

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