Papers - SOGA Tetsuo
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Direct evidence for self-annihilation of antiphase domains in GaAs/Si heterostructures Reviewed
Appl. Phys. Lett. 55 ( 5 ) 445 - 447 1989.04
Publishing type：Research paper (scientific journal)
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High quality GaAs and GaP on Si with III-V alloy SLS buffer layers Reviewed
J. Crystal Growth 98 ( 12 ) 188 - 194 1989.04
Publishing type：Research paper (scientific journal)
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Correlation between crystallinity and Schottky diode characteristics of GaAs grown on Si by MOCVD Reviewed
Mat. Res Soc. Symp. Proc. 148 ( 12 ) 273 - 278 1989.04
Publishing type：Research paper (international conference proceedings)
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Effects of growth temperature on MOCVD-grown GaAs-on-Si Reviewed
Mat. Res Soc. Symp. Proc. 148 ( 12 ) 235 - 240 1989.04
Publishing type：Research paper (international conference proceedings)
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Growth of GaAs on Si using AlGaP intermediate layer Reviewed
Mat. Res Soc. Symp. Proc. 148 ( 12 ) 247 - 252 1989.04
Publishing type：Research paper (international conference proceedings)
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Evaluation of anti-phase-boundaries in GaAs/Si heterostructures by transmission electron microscopy Reviewed
Mat. Res Soc. Symp. Proc. 148 ( 12 ) 267 - 272 1989.04
Publishing type：Research paper (international conference proceedings)
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Defect characterization of GaAs on Si grown by MOCVD Reviewed
Jpn. J. Appl. Phys 28 ( 12 ) 2441 - 2445 1989.04
Publishing type：Research paper (scientific journal)
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プラズマ MOCVD 装置の開発と InP 薄膜結晶成長
梅野正義, 内藤正美, 鈴木孝之, 曽我哲夫, 神保孝志, 松本功, 加藤匡也
名古屋工業大学学報 40 183 - 189 1989.03
Language：Japanese Publishing type：Research paper (bulletin of university, research institution)
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Junction characteristics of GaAs on Si for Solar Cell Application
T. Soga, T. Egawa, S. Nozaki, N. Noto, T. Jimbo and M. Umeno
Proceedings of 4th International Photovoltaic Science and Engineering Conference 359 - 363 1989.02
Language：English Publishing type：Research paper (international conference proceedings)
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MOCVD growth of GaAs on Si with strained layer superlattices Reviewed
Inst. Phys. Conf. Ser. 27 ( 91 ) 335 - 338 1988.04
Publishing type：Research paper (international conference proceedings)
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Etching technique to reveal dislocations in thin GaAs films grown on Si substrate Reviewed
Jpn. J. Appl. Phys. 27 ( 2 ) L159 - L160 1988.04
Publishing type：Research paper (scientific journal)
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Quality improvement of metalorganic chemical vapor deposition grown GaP on Si by AsH3 preflow Reviewed
Appl. Phys. Lett. 53 ( 10 ) 862 - 864 1988.04
Publishing type：Research paper (scientific journal)
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MOCVD growth and characterization of GaAs and GaP grown on Si substrates Reviewed
J. Crystal Growth 93 ( 11 ) 499 - 503 1988.04
Publishing type：Research paper (scientific journal)
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Less hazardous MOCVD growth of InP using solid red-phosphorus and H2 plasma Reviewed
J. Crystal Growth 93 ( 11 ) 52 - 55 1988.04
Publishing type：Research paper (scientific journal)
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High quality GaP grown on Si substrates by MOCVD Reviewed
Mat. Res Soc. Symp. Proc. 116 ( 11 ) 319 - 322 1988.04
Publishing type：Research paper (international conference proceedings)
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GaAs laser on Si substrate Reviewed
The Review of Laser Engineering 16 ( 11 ) 70 - 75 1988.04
Publishing type：Research paper (scientific journal)
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Selective MOCVD growth of GaAs on Si substrate with superlattice intermediate layers Reviewed
Jpn. J. Appl. Phys 26 ( 2 ) 252 - 255 1987.04
Publishing type：Research paper (scientific journal)
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Stress and strain of GaAs on Si grown by MOCVD using strained superlattice intermediate layers and a two-step growth method Reviewed
Jpn. J. Appl. Phys. 26 ( 5 ) L536 - L538 1987.04
Publishing type：Research paper (scientific journal)
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Heteroepitaxy of GaAs on Si by MOCVD Reviewed
Mat. Res Soc. Symp. Proc. 91 ( 91 ) 69 - 72 1987.04
Publishing type：Research paper (international conference proceedings)
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Studies on III-V compound semiconductors on Si substrates grown by MOCVD Reviewed
Tetsuo Soga
1987.03
Language：English Publishing type：Doctoral thesis
Other Link： https://m-opac.nul.nagoya-u.ac.jp/webopac/YB03245908
