Papers - SOGA Tetsuo

PH3/H2 plasma passivation of metal-organic chemical vapor deposition grown GaAs on Si Reviewed

J. Appl. Phys.   88 ( 6 )   3689 - 3694   2000.04

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Refractive index and degree of inhomogeneity of nanocrystalline TiO2 thin films: Effects of substrate and annealing temperature Reviewed

J. Appl. Phys.   88 ( 1月8日 )   4634 - 4641   2000.04

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Publishing type：Research paper (scientific journal)  

Stable cycling behavior of the light invariant AlGaAs/Si/metal hydride solar cell Reviewed

Solar Energy Materials & Solar Cells   64 ( 38 )   311 - 320   2000.04

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Efficient Solar Water Splitting, Exemplified by RuO2-Catalyzed AlGaAs/Si Photoelectrolysis Reviewed

J. Phys. Chem. B   104 ( 2月7日 )   8920 - 8924   2000.04

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Growth of stress-released GaAs on GaAs/Si structure by metalorganic chemical vapor deposition Reviewed

Appl. Phys. Lett.   77 ( 26 )   3947 - 3949   2000.04

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Camphoric carbon soot: a new target for deposition of diamond-like carbon films by pulsed laser ablation Reviewed

Thin Solid Films   376 ( 1月26日 )   001 - 004   2000.04

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Growth of nanocrystalline diamond films by biased enhanced microwave plasma chemical vapor deposition: A different regime of growth Reviewed

Appl. Phys. Lett.   77 ( 1月26日 )   4304 - 4306   2000.04

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Impurity investigation and structural quality determination of GaAs epilayers from mixed solvents (Ga + Bi) Reviewed

J. Crystal Growth   219 ( 1 )   321 - 326   2000.04

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Surface and bulk passivation of defects in GaAs/Si by RF plasma-assisted MOCVD Reviewed

J. Crystal Growth   221 ( 1 )   172 - 176   2000.04

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Growth of stress-reduced GaAs on Si substrate by using epitaxial lift-off and MOCVD regrowth Reviewed

J. Crystal Growth   221 ( 1 )   220 - 224   2000.04

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Analysis of hole transport in cubic phase of p-type GaN by relaxation time approximation Reviewed

Physica B   272 ( 5 )   256 - 259   1999.11

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Optical properties and X-ray photoelectron spectroscopic study of pure and Pb-doped TiO2 thin films Reviewed

J. Phys. Chem. of Solid   60 ( 2A )   201 - 210   1999.04

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Optical absorption and electrical conductivity of amorphous carbon thin films from camphor: a natural source Reviewed

Jpn. J. Appl. Phys   38 ( 2A )   658 - 663   1999.04

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A phosphorus doped (n-type) carbon/boron doped (p-type) silicon photovoltaic solar cell from a natural source Reviewed

Carbon   37 ( 162 )   531 - 533   1999.04

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Surface passivation of GaAs grown on Si by selenium sulfide treatment Reviewed

Inst. Phys. Conf. Ser.   38 ( 162 )   799 - 804   1999.04

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Publishing type：Research paper (international conference proceedings)  

A novel hydrogen passivation method for GaAs on Si grown by MOCVD Reviewed

Inst. Phys. Conf. Ser.   38 ( 162 )   597 - 602   1999.04

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Publishing type：Research paper (international conference proceedings)  

Hydrogen plasma passivation and improvement of the photovoltaic properties of a GaAs solar cell grown on Si substrate Reviewed

Jpn. J. Appl. Phys   38 ( 6A )   3504 - 3505   1999.04

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Light invariant, efficient, multiple band gap AlGaAs/Si/metal hydride solar cell Reviewed

Appl. Phys. Lett.   74 ( 26 )   4055 - 4057   1999.04

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Photoluminescence studies of hydrogen-passivated Al0.13Ga0.87As grown on Si substrate by metalorganic chemical vapor deposition Reviewed

Jpn. J. Appl. Phys   38 ( 7B )   L796 - L798   1999.04

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Surface and bulk passivation effect of GaAs grown on Si substrate by SeS2 treatment Reviewed

Jpn. J. Appl. Phys   38 ( 12A )   6587 - 6590   1999.04

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Publishing type：Research paper (scientific journal)