Papers - SOGA Tetsuo

A detailed study of H2 plasma passivation effects on GaAs/Si solar cell Reviewed

Solar Energy Materials & Solar Cells   66 ( 3 )   599 - 605   2001.04

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Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application Reviewed

Solar Energy Materials & Solar Cells   66 ( 3 )   593 - 598   2001.04

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Low density of defect states in hydrogenated amorphous carbon thin films grown by plasma-enhanced chemical vapor deposition Reviewed

Appl. Phys. Lett.   78 ( 3 )   294 - 296   2001.04

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Publishing type：Research paper (scientific journal)  

Investigation of Electrical and Optical Properties of Phosphine/Hydrogen-Plasma-Exposed In0.49Ga0.51P Grown on Si Substrate Reviewed

Jpn. J. Appl. Phys   40 ( 3A )   L189 - L191   2001.04

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Strong adhesion in nanocrystalline diamond films on silicon substrates Reviewed

J. Appl. Phys.   89 ( 9 )   4874 - 4878   2001.04

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Growth and characterization of GaAs epitaxial layers on Si/porous/Si substrate by chemical vapor deposition Reviewed

J. Appl. Phys.   89 ( 9 )   5215 - 5218   2001.04

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High compressive stress in nanocrystalline diamond films grown by microwave plasma chemical vapor deposition Reviewed

Diamond and Related Materials   10 ( 8 )   352 - 357   2001.04

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Structural and optical properties of diamond and nano-diamond films grown by microwave plasma chemical vapor deposition Reviewed

Diamond and Related Materials   10 ( 8 )   561 - 567   2001.04

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Passivation of Bulk and Surface Defects in GaAs Grown on Si Substrate by Radio Frequency Phosphine/Hydrogen Plasma Exposure Reviewed

Jpn. J. Appl. Phys.   40 ( 8 )   4781 - 4784   2001.04

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Publishing type：Research paper (scientific journal)  

Determination of optical properties of nitrogen-doped hydrogenated amorphous carbon films by spectroscopic ellipsometry Reviewed

Appl. Phys. Lett.   78 ( 25 )   3962 - 3694   2001.04

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Spectroscopic properties of nitrogen doped hydrogenated amorphous carbon films grown by radio frequency plasma-enhanced chemical vapor deposition Reviewed

J. Appl. Phys.   89 ( 12 )   7924 - 7931   2001.04

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Passivation of dislocations in GaAs grown on Si substrates by phosphine (PH3) plasma exposure Reviewed

Appl. Phys. Lett.   78 ( 22 )   3463 - 3465   2001.04

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Growth of nanocrystalline diamond films by biased enhanced microwave plasma chemical vapor deposition Reviewed

Diamond and Related Materials   10 ( 7 )   1592 - 1596   2001.04

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Diamond-like carbon by pulsed laser deposition from a camphoric carbon target: effect of phosphorus incorporation Reviewed

Diamond and Related Materials   10 ( 7 )   1839 - 1842   2001.04

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Phosphorous doping and defect studies of diamond-like carbon films by pulsed laser deposition using camphoric carbon target Reviewed

Diamond and Related Materials   10 ( 7 )   984 - 988   2001.04

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Deep levels reduction in (NH4)2S treated and annealed GaAs epilayer on Si substrate Reviewed

Materials Science and Engineering B   84 ( 7 )   195 - 199   2001.04

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Publishing type：Research paper (scientific journal)  

Optical and structural properties of nitrogen doped amorphous carbon films grown by rf plasma-enhanced CVD Reviewed

Diamond and Related Materials   10 ( 7 )   1002 - 1006   2001.04

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Hydrogen Plasma Passivation of Bulk GaAs and Al0.3Ga0.7As/GaAs Multiple-Quantum-Well Structures on Si Substrates Reviewed

J. Electron. Mater.   30 ( 7 )   845 - 849   2001.04

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Over 18% solar energy conversion to generation of hydrogen fuel; theory and experiment for efficient solar water splitting Reviewed

Int. J. Hydrogen Energy   26 ( 2 )   653 - 659   2001.04

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Origin of yellow luminescence in n-GaN induced by high-energy 7 MeV electron irradiation Reviewed

Physica B   304 ( 2 )   012 - 017   2001.04

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Publishing type：Research paper (scientific journal)