Papers - SOGA Tetsuo

Multiple-bandgap photoelectrochemistry: Inverted Semiconductor ohmic regenerative electrochemistry Reviewed

J. Phys. Chem. B   102 ( 4A )   2546 - 2554   1998.04

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Publishing type：Research paper (scientific journal)  

Electrical transport properties of GaSb grown by molecular beam epitaxy Reviewed

Jpn. J. Appl. Phys   37 ( 4A )   1704 - 1708   1998.04

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Publishing type：Research paper (scientific journal)  

High quality GaAs epitaxial layers grown from Ga-As-Bi solutions by liquid phase epitaxy Reviewed

S. Saravanan, K. Baskar, J. Kumar, C. Subramanian, T. Soga, T. Jimbo, B. M. Arora, M. Umeno

Jpn. J. Appl. Phys.   36   3385 - 3388   1997.06

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Language：English   Publishing type：Research paper (scientific journal)  

MOCVD growth of high-quality AlGaAs on Si substrates for high-efficiency solar cell Reviewed

J. Crystal Growth   170 ( 114/ )   447 - 450   1997.04

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Publishing type：Research paper (scientific journal)  

Surface deformation of the InGaN thin films deposited on a sapphire substrate Reviewed

Thin Solid Films   295 ( 114/ )   193 - 198   1997.04

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Optical properties of Pb doped TiO2 nanocrystalline thin films : a photoluminescence spectroscopic study Reviewed

Appl. Surf. Sci.   113 ( 114/ )   149 - 154   1997.04

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Publishing type：Research paper (scientific journal)  

Effect of thermal cyclic growth on deep levels in AlGaAs/Si heterostructures grown by MOCVD Reviewed

Appl. Surf. Sci.   113 ( 114/ )   573 - 578   1997.04

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Publishing type：Research paper (scientific journal)  

Optical properties of excimer laser annealed polycrystalline Si by spectroscopic ellipsometry Reviewed

Appl. Surf. Sci.   113 ( 114/ )   489 - 492   1997.04

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Publishing type：Research paper (scientific journal)  

Effect of NaOCl-polishing on metal organic chemical vapor deposition grown GaAs surface on Si substrate by spectroscopic ellipsometry and atomic force microscopy Reviewed

Jpn. J. Appl. Phys   36 ( 5A )   2829 - 2832   1997.04

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Publishing type：Research paper (scientific journal)  

MOCVD growth of high efficiency current-matched AlGaAs/Si tandem solar cell Reviewed

J. Crystal Growth   174 ( 8A )   579 - 584   1997.04

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Publishing type：Research paper (scientific journal)  

Polarized reflectance spectroscopy and spectroscopic ellipsometry determination of the optical anisotropy of gallium nitride on sapphire Reviewed

Jpn. J. Appl. Phys   36 ( 8A )   L1029 - L1031   1997.04

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Publishing type：Research paper (scientific journal)  

A theoretical model for the tilt of the GaAs/Si epilayers Reviewed

J. Crystal Growth   178 ( 24 )   276 - 279   1997.04

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Publishing type：Research paper (scientific journal)  

Porous GaAs formed by a two-step anodization process Reviewed

J. Crystal Growth   179 ( 24 )   661 - 664   1997.04

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Publishing type：Research paper (scientific journal)  

Carbon photovoltaic cell Reviewed

Carbon   35 ( 24 )   863 - 864   1997.04

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Publishing type：Research paper (scientific journal)  

Optical properties of wurzite structure GaN on sapphire around fundamental absorption edge (0.78-4.77 eV) by spectroscopic ellipsometry and the optical transmission method Reviewed

Appl. Phys. Lett.   70 ( 24 )   3209 - 3211   1997.04

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Publishing type：Research paper (scientific journal)  

Photovoltaic solar cell from camphoric carbon A natural source Reviewed

Solar Energy Materials & Solar Cells   48 ( 4 )   25 - 33   1997.04

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Publishing type：Research paper (scientific journal)  

Investigation of solid state Pb doped TiO2 solar cell Reviewed

Solar Energy Materials & Solar Cells   48 ( 4 )   123 - 130   1997.04

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Publishing type：Research paper (scientific journal)  

化学ビームエピタキシャル法とそれによるシリコン基板上化合物半導体の結晶成長

内田秀雄、邵春林、曽我哲夫、神保孝志、梅野正義

名古屋工業大学紀要   48   165 - 169   1997.03

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Language：Japanese   Publishing type：Research paper (bulletin of university, research institution)  

Initial Stage of GaP/Si Heteroepitaxial Growth by Metalorganic Chemical Vapor Deposition Reviewed

J. Crystal Growth   163 ( 8A )   165 - 170   1996.04

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Publishing type：Research paper (scientific journal)  

Characterization an improvement of GaAs layers grown on Si using an ultrathin a-Si film as a buffer layer Reviewed

Jpn. J. Appl. Phys   35 ( 8A )   L960 - L963   1996.04

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Publishing type：Research paper (scientific journal)