Papers - SOGA Tetsuo

Al0.22Ga0.78As/Si monolithic two-terminal tandem solar cell grown by MOCVD Reviewed

M. Umeno, Y. Azuma, T. Egawa, T Soga, T. Jimbo

Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference   741 - 746   1993.06

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Effects of thickness on dislocations in GaP on Si grown by metalorganic chemical vapor deposition Reviewed

Jpn. J. Appl. Phys   32 ( 6A )   L767 - L769   1993.04

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The effects of the growth parameters on the initial stage of epitaxial growth of GaP on Si by metalorganic chemical vapor deposition Reviewed

J. Crystal Growth   132 ( 11A )   134 - 140   1993.04

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Electrical properties of GaP on Si grown by metalorganic chemical vapor deposition Reviewed

J. Crystal Growth   132 ( 11A )   414 - 418   1993.04

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Characterization of antiphase domain in GaP on misoriented (001) Si substrate grown by metalorganic chemical vapor deposition Reviewed

Jpn. J. Appl. Phys   32 ( 11A )   4912 - 4915   1993.04

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Dislocation generation mechanisms for GaP on Si grown by metalorganic chemical vapor deposition Reviewed

Appl. Phys. Lett.   63 ( 18 )   2543 - 2545   1993.04

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Room-temperature cw operation of SQW lasers on Si grown with AlGaAs/AlGaP intermediate layer Reviewed

Mat. Res Soc. Symp. Proc.   228 ( 4 )   189 - 194   1992.04

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Stress-free GaAs on Si by laser pulse irradiation Reviewed

Jpn. J. Appl. Phys   31 ( 4 )   1189 - 1190   1992.04

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Tilt deformation of metalorganic chemical vapor deposition grown GaP on Si substrate Reviewed

Jpn. J. Appl. Phys   31 ( 61/ )   2079 - 2084   1992.04

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TEM characterization of the GaP/Si interface grown by MOCVD Reviewed

Appl. Surf. Sci.   60 ( 61/ )   380 - 384   1992.04

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First demonstration of AlxGa1-xAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition Reviewed

Jpn. J. Appl. Phys   31 ( 8B )   L1150 - L1152   1992.04

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Development of IR heating MOCVD system

43 ( 4 )   199 - 205   1992.03

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Publishing type：Research paper (bulletin of university, research institution)  

First results of AlGaAs/Si monolithic 2-terminal tandem solar cellgrown by MOCVD Reviewed

M. Umeno, H. Shimizu, T. Egawa, T Soga, T. Jimbo

Conference Record of the Twenty Second IEEE Photovoltaic Specialists Conference, 1991.   361 - 364   1991.11

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Very low dislocation density GaAs on Si using superlattice grown by MOCVD Reviewed

J. Crystal Growth   107 ( 11 )   479 - 482   1991.04

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Room temperature low threshold cw operation of MOCVD-grown AlGaAs/GaAs SQW lasers on Si substrate with SiO2 back-coating Reviewed

J. Crystal Growth   107 ( 11 )   757 - 760   1991.04

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Initial stage of epitaxial growth at the high temperature of GaAs and AlGaAs on Si by metalorganic chemical vapor deposition Reviewed

Appl. Phys. Lett.   58 ( 11 )   1170 - 1172   1991.04

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Improved characteristics of GaAs metal-semiconductor field-effect transistors on Si substrates back-coated with SiO2 by metalorganic chemical vapor deposition Reviewed

Appl. Phys. Lett.   58 ( 12 )   1265 - 1267   1991.04

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Two-dimensional growth of GaP on Si substrates under high V/III ratio by metal organic vapor phase epitaxy Reviewed

Jpn. J. Appl. Phys   30 ( 3 )   451 - 453   1991.04

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Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low-pressure metalorganic chemical vapor deposition Reviewed

Appl. Phys. Lett.   58 ( 19 )   2108 - 2110   1991.04

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Room-temperature continuous-wave operation of AlGaAs-GaAs single-quantum-well lasers on Si by metalorganic chemical-vapor deposition using AlGaAs-AlGaP intermediate layer Reviewed

IEEE J. Quantum Electron.   27 ( 6 )   1798 - 1803   1991.04

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