Papers - SOGA Tetsuo

Initial stage of heteroepitaxial growth of compound semiconductor on Si substrate Reviewed

Mat. Res Soc. Symp. Proc.   221 ( 12A )   155 - 160   1991.04

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Publishing type：Research paper (international conference proceedings)  

Nucleation mechanisms for compound semiconductors grown on Si by MOCVD Reviewed

J. Crystal Growth   115 ( 12A )   418 - 422   1991.04

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Publishing type：Research paper (scientific journal)  

Growth mechanism of GaP on Si substrate by MOVPE Reviewed

J. Crystal Growth   115 ( 12A )   158 - 163   1991.04

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Publishing type：Research paper (scientific journal)  

Effect of InGaAs/InP strained layer superlattice in InP-on-Si Reviewed

J. Crystal Growth   115 ( 12A )   154 - 157   1991.04

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Publishing type：Research paper (scientific journal)  

Initial growth mechanism for GaAs and GaP on Si substrate by metalorganic chemical vapor deposition Reviewed

Jpn. J. Appl. Phys.   30 ( 12A )   3471 - 3474   1991.04

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Publishing type：Research paper (scientific journal)  

MOCVD Growth and Evaluation of GaAs on p+n-Si and n+p-Si Substrates

M. Umeno, F. Cai, T. Jimbo, T. Soga, D. Imanishi, H. Matsuo

名古屋工業大学学報   42   137 - 141   1991.03

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Language：English   Publishing type：Research paper (bulletin of university, research institution)  

Improvement of GaAs metal-semiconductor field-effect transistors characteristics on SiO2 back-coated Si substrate by metalorganic chemical vapor deposition Reviewed

Jpn. J. Appl. Phys.   29 ( 12 )   L2417 - L2419   1990.04

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Publishing type：Research paper (scientific journal)  

High quality GaAs-on-Si by MOCVD with ternary alloys, AlGaP and AlGaAs Reviewed

Inst. Phys. Conf. Ser.   29 ( 106 )   117 - 122   1990.04

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Publishing type：Research paper (international conference proceedings)  

Effects of growth temperature and V/III ratio on MOCVD-grown GaAs-on-Si Reviewed

Jpn. J. Appl. Phys   29 ( 1 )   138 - 144   1990.04

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Publishing type：Research paper (scientific journal)  

Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition Reviewed

Appl. Phys. Lett.   56 ( 15 )   1433 - 1435   1990.04

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Publishing type：Research paper (scientific journal)  

Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganic chemical vapor deposition Reviewed

J. Appl. Phys.   67 ( 11 )   6908 - 6913   1990.04

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Publishing type：Research paper (scientific journal)  

Room-temperature cw operation of AlGaAs/GaAs SQW lasers on Si substrate by MOCVD using AlGaAs/AlGaP intermediate layer Reviewed

Jpn. J. Appl. Phys   29 ( 7 )   L1133 - L1135   1990.04

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Publishing type：Research paper (scientific journal)  

Low-threshold continuous-wave room temperature operation of AlxGa1-xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrate with SiO2 back coating Reviewed

Appl. Phys. Lett.   57 ( 12 )   1179 - 1181   1990.04

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Publishing type：Research paper (scientific journal)  

Etch pit study of MOCVD-grown GaAs on Si with III-V compound intermediate layers Reviewed

Defect Control in Semiconductors   198 ( 12 )   1307 - 1311   1990.04

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Publishing type：Research paper (international conference proceedings)  

Defect reduction of GaAs on Si by alloy strained superlattice layer Reviewed

Defect Control in Semiconductors   198 ( 12 )   1287 - 1294   1990.04

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Publishing type：Research paper (international conference proceedings)  

Nature and behavior of anti-phase-domains in GaAs/Si heterostructures grown by metalorganic chemical vapor deposition Reviewed

Defect Control in Semiconductors   198 ( 12 )   1141 - 1146   1990.04

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Publishing type：Research paper (international conference proceedings)  

TEM characterization of dislocations in GaAs-on-Si heterostructures with superlattice intermediate layer Reviewed

Mat. Res Soc. Symp. Proc.   198 ( 12 )   201 - 206   1990.04

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Publishing type：Research paper (international conference proceedings)  

Characteristics of MOCVD-grown AlGaAs/GaAs SQW lasers and GaAs MESFETs fabrication on Si substrate with SiO2-back coating Reviewed

Mat. Res Soc. Symp. Proc.   198 ( 12 )   141 - 146   1990.04

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Publishing type：Research paper (international conference proceedings)  

Characterization of MOCVD-grown GaAs/strained layer superlattices/GaP/Si heterostructures by transmission electron microscopy Reviewed

J. Crystal Growth   106 ( 12 )   491 - 497   1990.04

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Publishing type：Research paper (scientific journal)  

Etch pit observation of InP Reviewed

Jpn. J. Appl. Phys.   28 ( 5 )   941 - 942   1989.04

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Publishing type：Research paper (scientific journal)