Papers - KATO Masashi
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Active Noise Control in a Duct by an Analog Neural Network Circuit Reviewed
Masashi Kato
Applied Acoustics 72 ( 10 ) 732 - 736 2011.10
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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A diffraction-based technique for determination of interband absorption coefficients in bulk 3C-, 4H- and 6H-SiC crystals Reviewed
Patrik Scajev, Masashi Kato, and Kestutis Jarasiunas
JOURNAL OF PHYSICS D: APPLIED PHYSICS 44 365402-1 - 365402-8 2011.09
Language：English Publishing type：Research paper (scientific journal)
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Investigation of time series change and difference between universities in motivation for university entrance of students studying electrical and electronic engineering Reviewed
Masashi Kato, Akimasa Hirata, Shigeo Ohara, Osamu Eryu, Akihiro Maruta
131 ( 8 ) 635 - 636 2011.08
Authorship：Lead author Language：Japanese Publishing type：Research paper (scientific journal)
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Comparative studies of carrier dynamics in 3C-SiC layers grown on Si and 4H-SiC substrates Reviewed
P. Ščajev, J. Hassan, K. Jarašiūnas, M. Kato, A. Henry, J. P. Bergman
Journal of Electronic Materials 40 ( 4 ) 394 - 399 2011.04
Language：English Publishing type：Research paper (scientific journal)
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Electrical parameters of bulk 3C-SiC crystals determined by Hall effect, magnetoresistivity, and contactless time-resolved optical techniques Reviewed
P. Ščajev, A. Mekys, P. Malinovskis, J. Storasta, M. Kato, K. Jarašiūnas
Materials Science Forum 679-680 157 - 160 2011.04
Language：English Publishing type：Research paper (international conference proceedings)
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Improvement of Schottky contact characteristics by anodic oxidation of 4H-SiC Reviewed
Masaya Kimura, Masashi Kato, Masaya Ichimura
Materials Science Forum 679-680 461 - 464 2011.04
Language：English Publishing type：Research paper (international conference proceedings)
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Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO Reviewed
Masashi Kato, Hidenori Ono, Masaya Ichimura, Gan Feng, Tsunenobu Kimoto
Japanese Journal of Applied Physics 50 ( 3 ) 036603-1 - 036603-4 2011.03
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Internal Stresses in Free-Standing 3C-SiC Grown on Si and Their Relation to Carrier Lifetime Reviewed
V. Grivickas, G. Manolis, K. Gulbinas, J. Linnros, M. Kato
AIP Conf. Proc. 1292 91 - 94 2010.11
Language：English Publishing type：Research paper (international conference proceedings)
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Deep levels affecting the resistivity in semi-insulating 6H–SiC Reviewed
M. Kato (加藤正史), K. Kito (鬼頭孝輔), and M. Ichimura (市村正也)
Journal of Applied Physics 108 ( 5 ) 053718 2010.09
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/1.3481095
Other Link： http://link.aip.org/link/?JAP/108/053718
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Correlation between Schottky contact characteristics and regions with a low barrier height revealed by the electrochemical deposition on 4H-SiC Reviewed
Materials Science Forum 645-648 669 - 672 2010.04
Language：English Publishing type：Research paper (other academic)
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Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method Reviewed
Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA and Takeshi OHSHIMA
Materials Science Forum 645-648 207 - 210 2010.04
Language：English Publishing type：Research paper (other academic)
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Nonequilibrium carrier recombination in highly excited bulk SiC crystals Reviewed
K. Jarašiūnas, P. Ščajev, V. Gudelis, P. B. Klein, and M. Kato
Materials Science Forum 645-648 215 - 218 2010.04
Language：English Publishing type：Research paper (other academic)
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学習・教育目標を利用した要素別GPA分析による学修指導の試み Reviewed
大原繁男、森田良文、平田晃正、加藤正史、江龍修
電気学会論文誌Ａ 基礎・材料・共通部門誌 130 ( 1 ) 123 - 124 2010.01
Language：Japanese Publishing type：Research paper (scientific journal)
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Excess carrier recombination lifetime of bulk n-type 3C-SiC Reviewed
Vytautas Grivickas, Georgios Manolis, Karolis Gulbinas, Kestutis Jarašiūnas, Masashi KATO
APPLIED PHYSICS LETTERS 95 242110 2009.12
Publishing type：Research paper (scientific journal)
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Annealing Study of the electrochemically Deposited InSxOy Thin Film and Its Photovoltaic Application Reviewed
Ashraf M. Abdel HALEEM, Masashi KATO, Masaya ICHIMURA
IEICE TRANS. ELECTRON. E92C ( 12 ) 1464 - 1469 2009.12
Publishing type：Research paper (scientific journal)
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Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition Reviewed
Masashi KATO, Kazuya OGAWA, Masaya ICHIMURA
Materials Science Forum 600-603 373 - 376 2009.04
Publishing type：Research paper (other academic)
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Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy Reviewed
Masashi KATO, Kosuke KITO, Masaya ICHIMURA
Materials Science Forum 615-617 381 - 384 2009.04
Publishing type：Research paper (scientific journal)
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Characterization of plasma etching damage on p-type GaN using Schottky diodes Reviewed
Masashi KATO, Kazuki MIKAMO, Masaya ICHIMURA, Masakazu KANECHIKA, Osamu ISHIGURO, Tetsu KACHI
Journal of Applied Physics 103 93701 2008.05
Publishing type：Research paper (scientific journal)
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Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition
Masashi KATO, Hidenori ONO, Kazuya OGAWA, Masaya ICHIMURA
Technical Digest of 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 357 - 361 2008.04
Publishing type：Research paper (other academic)
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Low-Power Switched Current Memory Cell with CMOS-type Configuration Reviewed
Masashi KATO, Nobuyuki TERADA, Hirofumi OHATA, Eisuke ARAI
IEICE Transaction on Electronics E91C ( 1 ) 120 - 121 2008.01
Publishing type：Research paper (scientific journal)
