Papers - KATO Masashi
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Observation of Inhomogeneity of Schottky Barrier Height on 4H-SiC Using the Electrochemical Deposition Reviewed
Masashi Kato, Kazuya Ogawa, Masaya Ichimura
Japanese Journal of Applied Physics 46 ( 41 ) L997–L999 2007.10
Publishing type：Research paper (scientific journal)
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Excess Carrier Lifetime in a Bulk p-type 4H-SiC Wafer Measured by the Microwave Photoconductivity Decay Method Reviewed
Masashi KATO, Masahiko KAWAI, Tatsuhiro MORI, Masaya ICHIMURA, Shingo SUMIE, Hidehisa HASHIZUME
Japanese Journal of Applied Physics 46 ( 8 ) 5057 - 5061 2007.08
Publishing type：Research paper (scientific journal)
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Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes Reviewed
Masashi KATO, Kazuki MIKAMO, Masaya ICHIMURA, Masakazu KANECHIKA, Osamu ISHIGURO, Tetsu KACHI
Technical Digest of 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2007.06
Publishing type：Research paper (other academic)
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Analysis of plasma etching damages in GaN by excess carrier lifetime measurements Reviewed
Masashi KATO, Keisuke FUKUSHIMA, Masaya ICHIMURA, Masakazu KANECHIKA, Osamu ISHIGURO, Tetsu KACHI
Technical Digest of 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2007.06
Publishing type：Research paper (other academic)
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Excess Carrier Lifetimes in a Bulk p-type SiC Wafer Measured by the Microwave Photoconductivity Decay Method Reviewed
Masahiko KAWAI, Tatsuhiro MORI, Masashi KATO, Masaya ICHIMURA, Shingo SUMIE, Hidehisa HASHIZUME
Materials Science Forum 556-557 2007.04
Publishing type：Research paper (scientific journal)
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Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method Reviewed
Hideki Watanabe, Masashi Kato, Masaya Ichimura, Eisuke Arai, Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi
Japanese Journal of Applied Physics 46 ( 1 ) 35 - 39 2007.01
Publishing type：Research paper (scientific journal)
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Optical cross sections of deep levels in 4H-SiC Reviewed
M. KATO, S. TANAKA, M. ICHIMURA, E. ARAI, S. NAKAMURA, T. KIMOTO, R. PAESSLER
Journal of Applied Physics 100 53708 2006.09
Publishing type：Research paper (scientific journal)
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Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution Reviewed
Tatsuhiro MORI, Masashi KATO, Hideki WATANABE, Masaya ICHIMURA, Eisuke ARAI, Shingo SUMIE, Hidehisa HASHIZUME
Japanese Journal of Applied Physics 44 8333 - 8339 2005.12
Publishing type：Research paper (scientific journal)
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Excess Carrier Lifetime Measurements for GaN on Sapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity Decay Method Reviewed
Masashi Kato, Hideki Watanabe, Masaya Ichimura, and Eisuke Arai
Proceedings of Materials Research Society 831 E3.3.107 - 111 2005.04
Publishing type：Research paper (other academic)
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Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition Reviewed
Masashi KATO, Shoichi TANAKA, Masaya ICHIMURA, Eisuke ARAI, Shun-ichi NAKAMURA, Tsunenobu KIMOTO
Materials Science Forum 483-485 381 - 384 2005.01
Publishing type：Research paper (scientific journal)
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Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Shingo SUMIE, Hidehisa HASHIDUME
Materials Science Forum 457-460 505 - 508 2004.06
Publishing type：Research paper (scientific journal)
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Electrochemical oxidation and etching of 6H-SiC
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI
Recent Res. Devel. Electrochem. 7 45 - 70 2004.04
Publishing type：Research paper (scientific journal)
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Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy Reviewed
Yohei NAKAKURA, Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Yutaka TOKUDA, Shigehiro NISHINO
Journal of Applied Physics 94 ( 5 ) 3233 - 3238 2003.09
Publishing type：Research paper (scientific journal)
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Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Yutaka TOKUDA
Defect and Diffusion Forum 218-220 2003.08
Publishing type：Research paper (scientific journal)
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Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Perumalsamy RAMASAMY
Japanese Journal of Applied Physics 42 ( 7A ) 4233 - 4236 2003.07
Publishing type：Research paper (scientific journal)
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Electrochemical etching of n-type 6H-SiC using aqueous KOH solutions Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Perumalsamy RAMASAMY
Materials Science Forum 433-436 665 - 668 2003.07
Publishing type：Research paper (scientific journal)
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Etch pit observation for 6H-SiC by electrochemical etching using an Aqueous KOH solution Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Perumalsamy RAMASAMY
Journal of Electrochemical Society 150 C208 2003.04
Publishing type：Research paper (scientific journal)
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Deep center passivation in 3C-SiC by hydrogen plasma with a grid for damage suppression Reviewed
Masashi KATO, Fumitaka SOBUE, Masaya ICHIMURA, Eisuke ARAI, Noboru YAMADA, Yutaka TOKUDA, Tsugunori OKUMURA
Solid-State Electronics 46 2099 2002.12
Publishing type：Research paper (scientific journal)
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Characterization of deep levels in 3C-SiC by optical-capacitance-transient spectroscopy Reviewed
Yohei NAKAKURA, Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Yutaka TOKUDA
Proceedings of Materials Research Society Symposium 719 167 2002.10
Publishing type：Research paper (other academic)
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Deep level study in epitaxial 4H-SiC grown on substrates inclined toward <1100> Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Shigehiro NISHINO
Proceedings of Materials Research Society Symposium 719 457 2002.10
Publishing type：Research paper (other academic)
