Papers - KATO Masashi

Characteristics of Schottky diodes on 6H-SiC surfaces after sacrificial anodic oxidation Reviewed

Masashi KATO, Masaya ICHIMURA, Eisuke ARAI

Materials Science Forum   389-393   933   2002.01

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Publishing type：Research paper (other academic)  

Sacrificial Anodic Oxidation of 6H-SiC Reviewed

Masashi KATO, Masaya ICHIMURA, Eisuke ARAI

Japanese Journal of Applied Physics   40   L1145   2001.11

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Publishing type：Research paper (scientific journal)  

Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane Reviewed

Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Yasuichi MASUDA, Yi CHEN, Shigehiro NISHINO, Yutaka TOKUDA

Japanese Journal of Applied Physics   40   4943   2001.08

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Publishing type：Research paper (scientific journal)  

Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment Reviewed

Masashi KATO, Fumitaka SOBUE, Masaya ICHIMURA, Eisuke ARAI, Noboru YAMADA, Yutaka TOKUDA, Tsugunori OKUMURA

Japanese Journal of Applied Physics   40   2983   2001.04

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Publishing type：Research paper (scientific journal)  

DLTS study of 3C-SiC grown on Si using hexamethyldisilane Reviewed

Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Yasuichi MASUDA, Yi CHEN, Shigehiro NISHINI, Yutaka TOKUDA

Proceedings of Materials Research Society Symposium   622   T - 4.3   2000.10

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Publishing type：Research paper (other academic)  

Search for midgap levels in 3C-SiC grown on Si substrates Reviewed

Noboru YAMADA, Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Yutaka TOKUDA

Japanese Journal of Applied Physics   38   L1094   1999.10

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Publishing type：Research paper (scientific journal)