Papers - KATO Masashi
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Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation Reviewed International journal
Shunta Harada, Hitoshi Sakane, Toshiki Mii, Masashi Kato
Applied Physics Express 16 021001-1 - 021001-4 2023.02
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
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Effects of ion implantation process on defect distribution in SiC SJ-MOSFET Reviewed International journal
Takuya Fukui, Tatsuya Ishii, Takeshi Tawara, Kensuke Takenaka, Masashi Kato
Japanese Journal of Applied Physics 62 016508-1 - 016508-6 2023.01
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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4H-SiC Auger recombination coefficient under the high injection condition Reviewed International journal
Japanese Journal of Applied Physics 62 SC1017-1 - SC1017-4 2023.01
Authorship：Last author, Corresponding author Publisher：IOP Publishing
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Vascular endothelium as a target tissue for short-term exposure to low-frequency noise that increases cutaneous blood flow Reviewed International journal
Yuqi Deng, Nobutaka Ohgami, Takumi Kagawa, Fitri Kurniasari, Dijie Chen, Masashi Kato, Akira Tazaki, Masayo Aoki, Hiroki Katsuta, Keming Tong, Yishuo Gu, Masashi Kato
Science of The Total Environment 851 ( 1 ) 158828 2022.12
Language：English Publishing type：Research paper (scientific journal)
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Surface recombination velocities for the (100) and (001) crystal faces of bismuth vanadate single crystals Reviewed International journal
Endong Zhang, Masashi Kato
Journal of Physics D: Applied Physics 56 025103-1 - 025103-5 2022.12
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
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Mechanochemical Synthesis of Cesium Titanium Halide Perovskites Cs2TiBr6-xIx (x = 0, 2, 4, 6) Reviewed International coauthorship International journal
Christian Kupfer, Jack Elia, Masashi Kato, Andres Osvet, Christoph J. Brabec
Crystal Research Technology 2200150-1 - 2200150-6 2022.11
Language：English Publishing type：Research paper (scientific journal)
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Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation Reviewed International journal
Masashi Kato, Ohga Watanabe, Toshiki Mii, Hitoshi Sakane, Shunta Harada
Scientific Reports 12 18790 2022.11
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1038/s41598-022-23691-y
DOI： 10.1038/s41598-022-23691-y
Other Link： https://www.nature.com/articles/s41598-022-23691-y
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Trapping effects and surface/interface recombination of carrier recombination in single- or poly-crystalline metal halide perovskites Reviewed International coauthorship International journal
Ntumba Lobo, Takuya Kawane, Gebhard Matt, Andres Osvet, Shreetu Shrestha, Levchuk Ievgen, Christoph Brabec, Andrii Kanak, Petro Fochuk, Masashi Kato
2022.11
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation Reviewed International journal
Toshiki Mii, Hitoshi Sakane, Shunta Harada, Masashi Kato
Materials Science in Semiconductor Processing 153 107126-1 - 107126-5 2022.09
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Metal Organic Frameworks as Synthetic Precursors for SILAR: A Tale of Two Oxides Reviewed International coauthorship International journal
Noseung Myung, Kongshik Rho, Eun Bee Shon, Tae Wan Park, Soo Yeon Kim, Masashi Kato, Krishnan Rajeshwar
ECS Journal of Solid State Science and Technology 11 093007 2022.09
Language：English Publishing type：Research paper (scientific journal)
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Estimation of surface recombination velocities and bulk carrier lifetime for SrTiO3 using angle-lapped structures Reviewed International journal
Masashi Kato, Yosuke Kato
Chemical Physics Letters 805 139955-1 - 139955-3 2022.08
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation Reviewed International journal
Shunta Harada, Toshiki Mii, Hitoshi Sakane, Masashi Kato
Scientific Reports 12 13542 2022.08
Language：English Publishing type：Research paper (scientific journal)
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Relationship of carbon concentration and slow decays of photoluminescence in homoepitaxial n-type GaN layers Reviewed International journal
Masashi Kato, Takuto Maeda, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi
Japanese Journal of Applied Physics 61 078004-1 - 078004-4 2022.07
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Hole capture cross section of the Al acceptor level in 4H-SiC Reviewed International journal
Masashi Kato, Jing Di, Yutaro Ohkouchi, Taisuke Mizuno, Masaya Ichimura, Kazutoshi Kojima
Materials Today Communications 31 103648-1 - 103648-3 2022.05
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Characterization of Defect Structure in Epilayer Grown on On‑Axis SiC by Synchrotron X‑ray Topography Reviewed International journal
Kotaro Ishiji, Masashi Kato, Ryuichi Sugie
Journal of Electronic Materials 51 1541 - 1547 2022.01
Language：English Publishing type：Research paper (scientific journal)
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Depth Distribution of Defects in SiC PiN Diodes FormedUsing Ion Implantation or Epitaxial Growth Reviewed International journal
Shuhei Fukaya,Yoshiyuki Yonezawa,Tomohisa Kato,Masashi Kato
Physica Status Solidi B 2100419-1 - 2100419-6 2021.10
Language：English Publishing type：Research paper (scientific journal) Publisher：Wiley-VCH GmbH
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Deep levels related to the carbon antisite-vacancy pair in 4H-SiC Reviewed International coauthorship International journal
Hiroki Nakane, Masashi Kato, Yutaro Ohkouchi, Xuan Thang Trinh, Ivan G. Ivanov, Takeshi Ohshima, Nguyen Tien Son
Journal of Applied Physics 130 065703 2021.08
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/5.0059953
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Durable and efficient photoelectrochemical water splitting using TiO2 and 3C–SiC single crystals in a tandem structure Reviewed International journal
Endong Zhang, Zhenhang Liu, Masashi Kato
Solar Energy Materials and Solar Cells 230 ( 15 ) 111260 2021.06
Language：English Publishing type：Research paper (scientific journal)
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Carrier recombination in SrTiO3 single crystals: impacts of crystal faces and Nb doping Reviewed International journal
Masashi Kato, Takaya Ozawa, Yoshihito Ichikawa
Journal of Physics D: Applied Physics 54 ( 34 ) 345106 2021.06
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP Science
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Flexible Photocatalytic Electrode Using Graphene, Non-noble Metal, and Organic Semiconductors for Hydrogen Evolution Reaction Reviewed International coauthorship International journal
Kohei Kondo, Yusuke Watanabe, Junya Kuno, Yosuke Ishii, Shinji Kawasaki, Masashi Kato, Golap Kalita, Yoshiyuki Hattori, Oleksandr Mashkov, Mykhailo Sytnyk, Wolfgang Heiss
Energy Technology 9 ( 8 ) 2100123 2021.05
Language：English Publishing type：Research paper (scientific journal)
