Papers - KATO Masashi
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高エネルギーイオン注入を用いた欠陥制御による SiC パワーデバイス劣化抑制 Invited
原田俊太、坂根 仁、加藤正史
まてりあ 64 ( 7 ) 455 - 460 2025.07
Authorship：Last author Language：Japanese Publishing type：Research paper (scientific journal) Publisher：日本金属学会
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Bulk and surface recombination of carriers in SiC and related wide band gap semiconductor materials Invited Reviewed International journal
Masashi Kato
Japanese Journal of Applied Physics 64 060101-1 - 060101-20 2025.06
Authorship：Lead author, Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Hydrogen and point defect introduction into 4H-SiC by plasma treatment Reviewed International journal
Tong Li, Hitoshi Sakane, Shunta Harada, Yasuyoshi Kurokawa and Masashi Kato
Japanese Journal of Applied Physics 64 051003-1 - 051003-5 2025.05
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
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Investigating surface recombination velocity and bulk carrier lifetime in lithium tantalate using micro-photoconductance decay techniques Reviewed International journal
Ntumba Lobo, Liu Huan Xiu, Endong Zhang, Masashi Kato
Chemical Physics Letters 869 142061-1 - 142061-6 2025.03
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Observation of point defect and carrier lifetime distributions in hydrogen or helium ion implanted SiC PiN diodes for suppression of bipolar degradation Reviewed International journal
Masashi Kato, Tong Li, Hitoshi Sakane, Shunta Harada
Japanese Journal of Applied Physics 64 010901-1 - 010901-4 2025.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Controlled Domain in 3C-SiC Epitaxial Growth on Off-Oriented 4H-SiC Substrates for Improvement of Photocathode Performance Reviewed International journal
Kongshik Rho, Jun Fujita, Masashi Kato
ECS Journal of Solid State Science and Technology 13 125002-1 - 125002-5 2024.12
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
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Charge carrier recombination in TiO2 and SrTiO3 single crystals: Impact of CoOx cocatalyst loading Reviewed International journal
Endong Zhang, Toru Takayoshi, Zhenhua Pan, Masashi Kato
Journal of Applied Physics 136 205303-1 - 205303-5 2024.11
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
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Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation Reviewed International journal
Tong Li, Hitoshi Sakane, Shunta Harada, Masashi Kato
Applied Physics Express 17 086503-1 - 086503-4 2024.08
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.35848/1882-0786/ad6be5
DOI： 10.35848/1882-0786/ad6be5
Other Link： https://iopscience.iop.org/journal/1882-0786
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Analysis of defects dominating carrier recombination in CeO2 single crystal for photocatalytic applications Reviewed International coauthorship International journal
Endong Zhang, Christoph J Brabec, Masashi Kato
Journal of Physics D: Applied Physics 57 305104-1 - 305104-7 2024.05
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
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Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV Reviewed International coauthorship International journal
Manuel Belanche, Yoshiyuki Yonezawa, Rene Heller, Arnold Muller, Christof Vockenhuber, Corinna Martinella, Michael Rub, Masashi Kato, Koichi Murata, Hidekazu Tsuchida, Koji Nakayama, Ulrike Grossner
Materials Science in Semiconductor Processing 179 108461-1 - 108461-8 2024.05
Language：English Publishing type：Research paper (scientific journal)
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Photoelectrical characterization of heavily doped p-SiC Schottky contacts Reviewed International journal
Hiroki Imabayashi, Hitose Sawazaki, Haruto Yoshimura, Masashi Kato, Kenji Shiojima
Japanese Journal of Applied Physics 63 ( 4 ) 04SP71-1 - 04SP71-6 2024.04
Language：English Publishing type：Research paper (scientific journal)
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Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate Reviewed International journal
Masashi Kato, Ohga Watanabe, Shunta Harada, Hitoshi Sakane
Materials Science in Semiconductor Processing 175 108264-1 - 108264-5 2024.02
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Mitigation of carrier trapping effects on carrier lifetime measurements with continuous-wave laser illumination for Pb-based metal halide perovskite materials Reviewed International coauthorship International journal
Ntumba Lobo, Gebhard J. Matt, Andres Osvet, Shreetu Shrestha, Andrii Kanak, Petro Fochuk, Christoph J. Brabec, Masashi Kato
Journal of Applied Physics 135 074905-1 - 074905-7 2024.02
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/5.0181654
DOI： 10.1063/5.0181654
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Effect of dislocations on carrier recombination and photoelectrochemical activity in polished and unpolished TiO2 and SrTiO3 crystals Reviewed International journal
Endong Zhang, Mingxin Zhang, Masashi Kato
Journal of Applied Physics 135 045102-1 - 045102-9 2024.01
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
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Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective Reviewed International journal
Masashi Kato, Shunta Harada, Hitoshi Sakane
Japanese Journal of Applied Physics 63 020804-1 - 020804-6 2024.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions Reviewed International journal
Kazuhiro Tanaka, Masashi Kato
Japanese Journal of Applied Physics 63 011002-1 - 011002-5 2024.01
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Unravelling material properties of halide perovskites by combined microwave photoconductivity and time-resolved photoluminescence spectroscopy Reviewed International coauthorship International journal
Journal of Materials Chemistry C 2023.12
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1039/d3tc03867j
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Surface recombination velocities for 4H–SiC: Dependence of excited carrier concentration and surface passivation Reviewed International journal
Masashi Kato, Ayato Ogawa, Lei Han, Tomohisa Kato
Materials Science in Semiconductor Processing 170 107980-1 - 107980-5 2023.11
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Analysis of carrier recombination coefficients of 3C-and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC Reviewed International journal
Kazuhiro Tanaka, Masashi Kato
AIP Advances 13 085220 2023.08
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/5.0157696
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Development of an angle detection system for channeling implantation to the c-axis of SiC using birefringence phenomenon Reviewed International journal
Masashi Kato, Takumi Maruhashi, Hisaya Sato, Yoshiyuki Yonezawa
62 068003-1 - 068003-3 2023.06
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation Reviewed International journal
Shunta Harada, Hitoshi Sakane, Toshiki Mii, Masashi Kato
Applied Physics Express 16 021001-1 - 021001-4 2023.02
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
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Effects of ion implantation process on defect distribution in SiC SJ-MOSFET Reviewed International journal
Takuya Fukui, Tatsuya Ishii, Takeshi Tawara, Kensuke Takenaka, Masashi Kato
Japanese Journal of Applied Physics 62 016508-1 - 016508-6 2023.01
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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4H-SiC Auger recombination coefficient under the high injection condition Reviewed International journal
Japanese Journal of Applied Physics 62 SC1017-1 - SC1017-4 2023.01
Authorship：Last author, Corresponding author Publisher：IOP Publishing
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Vascular endothelium as a target tissue for short-term exposure to low-frequency noise that increases cutaneous blood flow Reviewed International journal
Yuqi Deng, Nobutaka Ohgami, Takumi Kagawa, Fitri Kurniasari, Dijie Chen, Masashi Kato, Akira Tazaki, Masayo Aoki, Hiroki Katsuta, Keming Tong, Yishuo Gu, Masashi Kato
Science of The Total Environment 851 ( 1 ) 158828 2022.12
Language：English Publishing type：Research paper (scientific journal)
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Surface recombination velocities for the (100) and (001) crystal faces of bismuth vanadate single crystals Reviewed International journal
Endong Zhang, Masashi Kato
Journal of Physics D: Applied Physics 56 025103-1 - 025103-5 2022.12
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
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Mechanochemical Synthesis of Cesium Titanium Halide Perovskites Cs2TiBr6-xIx (x = 0, 2, 4, 6) Reviewed International coauthorship International journal
Christian Kupfer, Jack Elia, Masashi Kato, Andres Osvet, Christoph J. Brabec
Crystal Research Technology 2200150-1 - 2200150-6 2022.11
Language：English Publishing type：Research paper (scientific journal)
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Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation Reviewed International journal
Masashi Kato, Ohga Watanabe, Toshiki Mii, Hitoshi Sakane, Shunta Harada
Scientific Reports 12 18790 2022.11
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1038/s41598-022-23691-y
DOI： 10.1038/s41598-022-23691-y
Other Link： https://www.nature.com/articles/s41598-022-23691-y
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Trapping effects and surface/interface recombination of carrier recombination in single- or poly-crystalline metal halide perovskites Reviewed International coauthorship International journal
Ntumba Lobo, Takuya Kawane, Gebhard Matt, Andres Osvet, Shreetu Shrestha, Levchuk Ievgen, Christoph Brabec, Andrii Kanak, Petro Fochuk, Masashi Kato
2022.11
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation Reviewed International journal
Toshiki Mii, Hitoshi Sakane, Shunta Harada, Masashi Kato
Materials Science in Semiconductor Processing 153 107126-1 - 107126-5 2022.09
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Metal Organic Frameworks as Synthetic Precursors for SILAR: A Tale of Two Oxides Reviewed International coauthorship International journal
Noseung Myung, Kongshik Rho, Eun Bee Shon, Tae Wan Park, Soo Yeon Kim, Masashi Kato, Krishnan Rajeshwar
ECS Journal of Solid State Science and Technology 11 093007 2022.09
Language：English Publishing type：Research paper (scientific journal)
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Estimation of surface recombination velocities and bulk carrier lifetime for SrTiO3 using angle-lapped structures Reviewed International journal
Masashi Kato, Yosuke Kato
Chemical Physics Letters 805 139955-1 - 139955-3 2022.08
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation Reviewed International journal
Shunta Harada, Toshiki Mii, Hitoshi Sakane, Masashi Kato
Scientific Reports 12 13542 2022.08
Language：English Publishing type：Research paper (scientific journal)
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Relationship of carbon concentration and slow decays of photoluminescence in homoepitaxial n-type GaN layers Reviewed International journal
Masashi Kato, Takuto Maeda, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi
Japanese Journal of Applied Physics 61 078004-1 - 078004-4 2022.07
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Hole capture cross section of the Al acceptor level in 4H-SiC Reviewed International journal
Masashi Kato, Jing Di, Yutaro Ohkouchi, Taisuke Mizuno, Masaya Ichimura, Kazutoshi Kojima
Materials Today Communications 31 103648-1 - 103648-3 2022.05
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Characterization of Defect Structure in Epilayer Grown on On‑Axis SiC by Synchrotron X‑ray Topography Reviewed International journal
Kotaro Ishiji, Masashi Kato, Ryuichi Sugie
Journal of Electronic Materials 51 1541 - 1547 2022.01
Language：English Publishing type：Research paper (scientific journal)
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Depth Distribution of Defects in SiC PiN Diodes FormedUsing Ion Implantation or Epitaxial Growth Reviewed International journal
Shuhei Fukaya,Yoshiyuki Yonezawa,Tomohisa Kato,Masashi Kato
Physica Status Solidi B 2100419-1 - 2100419-6 2021.10
Language：English Publishing type：Research paper (scientific journal) Publisher：Wiley-VCH GmbH
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Deep levels related to the carbon antisite-vacancy pair in 4H-SiC Reviewed International coauthorship International journal
Hiroki Nakane, Masashi Kato, Yutaro Ohkouchi, Xuan Thang Trinh, Ivan G. Ivanov, Takeshi Ohshima, Nguyen Tien Son
Journal of Applied Physics 130 065703 2021.08
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/5.0059953
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Durable and efficient photoelectrochemical water splitting using TiO2 and 3C–SiC single crystals in a tandem structure Reviewed International journal
Endong Zhang, Zhenhang Liu, Masashi Kato
Solar Energy Materials and Solar Cells 230 ( 15 ) 111260 2021.06
Language：English Publishing type：Research paper (scientific journal)
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Carrier recombination in SrTiO3 single crystals: impacts of crystal faces and Nb doping Reviewed International journal
Masashi Kato, Takaya Ozawa, Yoshihito Ichikawa
Journal of Physics D: Applied Physics 54 ( 34 ) 345106 2021.06
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP Science
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Flexible Photocatalytic Electrode Using Graphene, Non-noble Metal, and Organic Semiconductors for Hydrogen Evolution Reaction Reviewed International coauthorship International journal
Kohei Kondo, Yusuke Watanabe, Junya Kuno, Yosuke Ishii, Shinji Kawasaki, Masashi Kato, Golap Kalita, Yoshiyuki Hattori, Oleksandr Mashkov, Mykhailo Sytnyk, Wolfgang Heiss
Energy Technology 9 ( 8 ) 2100123 2021.05
Language：English Publishing type：Research paper (scientific journal)
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Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers Reviewed International journal
Masashi Kato, Takato Asada, Takuto Maeda, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi
Journal of Applied Physics 129 ( 11 ) 115701 2021.03
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/5.0041287
Other Link： https://doi.org/10.1063/5.0041287
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Nondestructive measurements of depth distribution of carrier lifetimes in 4H-SiC thick epitaxial layers using time-resolved free carrier absorption with intersectional lights Reviewed International journal
Takashi Hirayama, Keisuke Nagaya, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato
Review of Scientific Instruments 91 ( 12 ) 123902 2020.12
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP Publishing LLC
DOI： 10.1063/5.0018080
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Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy Reviewed International journal
Yongzhao Yao, Yoshihiro Sugawara, Daisaku Yokoe, Koji Sato, Yukari Ishikawa, Narihito Okada, Kazuyuki Tadatomo, Masaki Sudo, Masashi Kato, Makoto Miyoshi, Takashi Egawa
CrystEngComm 22 8299 - 8312 2020.10
Language：English Publishing type：Research paper (scientific journal) Publisher：Royal Society of Chemistry
DOI： 10.1039/D0CE01344G
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Observation of carrier lifetime distribution in 4H-SiC thick epilayers using microscopic time-resolved free carrier absorption system Reviewed International journal
K. Nagaya, T. Hirayama, T. Tawara, K. Murata, H. Tsuchida, A. Miyasaka, K. Kojima, T. Kato, H. Okumura, M. Kato
Journal of Applied Physics 128 105702-1 - 105702-7 2020.09
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/5.0015199
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Mapping of large structural defects in SiC Schottky contacts using internal photoemission microscopy Reviewed International journal
Kenji Shiojima, Masashi Kato
Materials Science in Semiconductor Processing 118 105182-1 - 105182-12 2020.05
Language：English Publishing type：Research paper (scientific journal)
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Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces Reviewed International journal
Masashi Kato, Zhang Xinchi, Kimihiro Kohama, Shuhei Fukaya, Masaya Ichimura
Journal of Applied Physics 127 195702-1 - 195702-7 2020.05
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/5.0007900
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Highly efficient 3C-SiC photocathodes with texture structures formed by electrochemical etching Reviewed International journal
Masashi Kato, Tomohiro Ambe
Applied Physics Express 13 026506 2020.02
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Heat shock protein 70 is a key molecule to rescue imbalance caused by low‑frequency noise Reviewed International coauthorship International journal
Reina Negishi‑Oshino, Nobutaka Ohgami, Tingchao He, Xiang Li, Masashi Kato, Masayoshi Kobayashi, Yishuo Gu, Kanako Komuro, Charalampos E. Angelidis, Masashi Kato
Archives of Toxicology 2019.10
Language：English Publishing type：Research paper (scientific journal)
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Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates Reviewed International journal
Masashi Kato, Naoto Ichikawa, Yoshitaka Nakano
Materials Letters 254 96 - 98 2019.07
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Effects of Nb Doping on the Photocatalytic Performance of Rutile TiO2 Single Crystals Reviewed International journal
Masashi Kato, Hayao Najima, Takaya Ozawa
Journal of The Electrochemical Society 166 ( 10 ) H468 - H472 2019.06
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1149/2.1231910jes
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Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method Invited Reviewed International journal
Takato Asada, Yoshihito Ichikawa, Masashi Kato
Journal of Visualized Experiments 146 e59007 2019.04
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.3791/59007
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RECOMBINATION AND DIFFUSION PROCESSES IN ELECTRONIC GRADE 4H SILICON CARBIDE Reviewed International coauthorship International journal
P. Ščajev, L. Subačius, K. Jarašiūnas, M. Kato
Lithuanian Journal of Physics 59 ( 1 ) 26 - 34 2019.04
Language：English Publishing type：Research paper (scientific journal)
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Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction Reviewed International journal
Ajinkya K. Ranade, Rakesh D. Mahyavanshi, Pradeep Desai, Masashi Kato, Masaki Tanemura, Golap Kalita
Applied Physics Letters 114 151102 2019.04
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/1.5084190
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Impact of intrinsic defects on excitation dependent carrier lifetime in thick4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques Reviewed International coauthorship International journal
Patrik Ščajev, Saulius Miasojedovas, Liudvikas Subačius, Kęstutis Jarašiūnas, Alexander V. Mazanik , Olga V. Korolik, Masashi Kato
Journal of Luminescence 212 92 - 98 2019.04
Language：English Publishing type：Research paper (scientific journal)
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Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC Reviewed International journal
Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, and Tsunenobu Kimoto
Journal of Applied Physics 124 ( 9 ) 095702 2018.09
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/1.5042561
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Passivation of surface recombination at the Si-face of 4H-SiC by acidic solutions Reviewed International journal
Yoshihito Ichikawa, Masaya Ichimura, Tsunenobu Kimoto, Masashi Kato
the ECS Journal of Solid State Science and Technology 7 ( 8 ) Q127 - Q130 2018.06
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1149/2.0031808jss
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Expansion of a single Shockley stacking fault in a 4H-SiC (1120) epitaxial layer caused by electron beam irradiation Reviewed International journal
Yukari Ishikawa, Masaki Sudo, Yong-Zhao Yao, Yoshihiro Sugawara, Masashi Kato
JOURNAL OF APPLIED PHYSICS 123 225101-1 - 225101-6 2018.06
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/1.5026448
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Increased expression level of Hsp70 in the inner ears of mice by exposure to low frequency noise Reviewed International coauthorship International journal
Hiromasa Ninomiya, Nobutaka Ohgami, Reina Oshino, Masashi Kato, Kyoko Ohgami, Xiang Li, Dandan Shen, Machiko Iida, Ichiro Yajima, Charalampos E. Angelidis, Hiroaki Adachi, Masahisa Katsuno, Gen Sobue, Masashi Kato
Hearing Research 363 49 - 54 2018.06
Language：English Publishing type：Research paper (scientific journal)
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Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation Reviewed International journal
Masaki Sudo, Yukari Ishikawa, Yong Zhao Yao, Yoshihiro Sugawara, Masashi Kato
Materials Science Forum 924 151 - 154 2018.06
Language：English Publishing type：Research paper (international conference proceedings)
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Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC Reviewed International journal
Shinichi Mae, Takeshi Tawara, Hidekazu Tsuchida, Masashi Kato
Materials Science Forum 924 269 - 272 2018.06
Language：English Publishing type：Research paper (international conference proceedings)
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Observations of Inhomogeneity of 3C-SiC Layers Grown on 6H-SiC Substrates Using Scanning Internal Photoemission Microscopy Reviewed
Kenji Shiojima, Naoki Mishina, Naoto Ichikawa, Masashi Kato
Japanese Journal of Applied Physics 57 04FR06 2018.02
Language：English Publishing type：Research paper (scientific journal)
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Solar Water Splitting Utilizing a SiC Photocathode, a BiVO4 Photoanode, and a Perovskite Solar Cell Reviewed International journal
Akihide Iwase, Akihiko Kudo, Youhei Numata, Masashi Ikegami, Tsutomu Miyasaka, Naoto Ichikawa, Masashi Kato, Hideki Hashimoto, Haruo Inoue, Osamu Ishitani, Hitoshi Tamiaki
ChemSusChem 10 ( 22 ) 4420 - 4423 2017.11
Language：English Publishing type：Research paper (scientific journal)
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P-Type 3C-SiC Photocathode for Solar to Hydrogen Energy Conversion Invited Reviewed International journal
Masashi Kato
ECS Transactions 80 ( 4 ) 43 - 55 2017.09
Authorship：Lead author Language：English Publishing type：Research paper (international conference proceedings)
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Improved performance of 3C-SiC photocathodes by using a pn junction Reviewed International journal
Naoto Ichikawa, Masaya Ichimura, Masashi Kato
International Journal of Hydrogen Energy 42 ( 36 ) 22698 - 22703 2017.09
Language：English Publishing type：Research paper (scientific journal)
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Effects of thermal aging on Cu nanoparticle/Bi-Sn solder hybrid bonding Reviewed International journal
M. Usui, T. Satoh, H. Kimura, S. Tajima, Y. Hayashi, D. Setoyama, M. Kato
Microelectronics Reliability 78 93 - 99 2017.08
Language：English Publishing type：Research paper (scientific journal)
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Risk Assessment of Neonatal Exposure to Low Frequency Noise Based on Balance in Mice Reviewed International journal
Nobutaka Ohgami, Reina Oshino, Hiromasa Ninomiya, Xiang Li, Masashi Kato, Ichiro Yajima, Masashi Kato
Frontiers in Behavioral Neuroscience 11 30 2017.02
Language：English Publishing type：Research paper (scientific journal)
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Two-dimensional characterization of 3C-SiC layers using scanning internal photoemission microscopy: Mapping of electrical characteristics and crystal quality in domain boundary regions Reviewed
Kenji Shiojima, Masato Shingo, Naoto Ichikawa, Masashi Kato
Japanese Journal of Applied Physics 56 04CR06 2017.02
Language：English Publishing type：Research paper (scientific journal)
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The enhanced performance of 3C-SiC photocathodes for the generation of hydrogen through the use of cocatalysts Reviewed International journal
Naoto Ichikawa, Masashi Kato, Masaya Ichimura
Applied Physics Letters 109 153904-1 - 153904-4 2016.10
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/1.4964825
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Evaluation of surface recombination of SiC for development of bipolar devices Invited Reviewed International journal
Masashi Kato
Proc. SPIE 9957, Wide Bandgap Power Devices and Applications 995703-1 - 995703-9 2016.09
Authorship：Lead author Language：English Publishing type：Research paper (international conference proceedings)
DOI： 10.1117/12.2240471
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Degradation of a sintered Cu nanoparticle layer studied by synchrotron radiation computed laminography Reviewed International journal
Masanori Usui, Hidehiko Kimura, Toshikazu Satoh, Takashi Asada, Satoshi Yamaguchi, Masashi Kato
Microelectronics Reliability 63 152 - 158 2016.08
Language：English Publishing type：Research paper (scientific journal)
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Improved performance of InGaN/GaN multilayer solar cells with an atomic-layer-deposited Al2O3 passivation film Reviewed International journal
M. Miyoshi, T. Kabata, T. Tsutsumi, T. Mori, M. Kato, T. Egawa
Electronics Letters 52 ( 14 ) 1246 - 1248 2016.06
Language：English Publishing type：Research paper (scientific journal) Publisher：The Institution of Engineering and Technology
DOI： 10.1049/el.2016.1574
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Development of a microwave photoconductance measurement technique for the study of carrier dynamics in highly-excited 4H-SiC Reviewed
L Subačius, K Jarašiūnas, P Ščajev, M Kato
Measurement Science and Technology 26 125014-1 - 125014-8 2015.11
Language：English Publishing type：Research paper (scientific journal)
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Spectral response, carrier lifetime, and photocurrents of SiC photocathodes Reviewed
Masashi Kato, Keiko Miyake, Tomonari Yasuda, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima
Japanese Journal of Applied Physics 55 01AC02-1 - 01AC02-4 2015.10
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Naoto Ichikawa, Masashi Kato, and Masaya Ichimura
Applied Physics Express 8 091301-1 - 091301-3 2015.08
Language：English Publishing type：Research paper (scientific journal)
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Carrier lifetime measurements on various crystal faces of rutile TiO2 single crystals Reviewed
Masashi Kato, Kimihiro Kohama,Yoshihito Ichikawa,Masaya Ichimura
MaterialsLetters 160 397 - 399 2015.08
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron–hole scattering Reviewed
Masashi Kato, Yuto Mori, Masaya Ichimura
Japanese Journal of Applied Physics 54 ( 4S ) 04DP14-1 - 04DP14-4 2015.03
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Surface recombination velocities for n-type 4H-SiC treated by various processes Reviewed
Yuto Mori, Masashi Kato, Masaya Ichimura
J. Phys. D: Appl. Phys. 47 335102-1 - 335102-5 2014.07
Language：English Publishing type：Research paper (scientific journal)
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Howling reduction by analog phase-locked loop and active noise control circuits Reviewed
Manami Kubo, Junki Taniguchi, Masashi Kato
Applied Acoustics 87 174 - 182 2014.07
Language：English Publishing type：Research paper (scientific journal)
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Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation Reviewed
Masashi Kato, Kazuki Yoshihara, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima
Japanese Journal of Applied Physics 53 04EP09 2014.02
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Epitaxial p-type SiC as a self-driven photocathode for water splitting Reviewed
Masashi Kato, Tomonari Yasuda, Keiko Miyake, Masaya Ichimura, Tomoaki Hatayama
International Journal of Hydrogen Energy 39 4845 - 4849 2014.02
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Identification of structures of the deep levels in 4H-SiC Reviewed
Hiroki Nakane, Masashi Kato, Masaya Ichimura, Takeshi Ohshima
Materials Science Forum 778-780 277 - 280 2014.02
Language：English Publishing type：Research paper (international conference proceedings)
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Impact of carrier lifetime on efficiency of photolytic hydrogen generation by p-type SiC Reviewed
Keiko Miyake, Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima
Materials Science Forum 778-780 503 - 506 2014.02
Language：English Publishing type：Research paper (international conference proceedings)
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Estimation of surface recombination velocities for n-type 4H-SiC surfaces treated by various processes Reviewed
Yuto Mori, Masashi Kato, Masaya Ichimura
Materials Science Forum 778-780 432 - 435 2014.02
Language：English Publishing type：Research paper (international conference proceedings)
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Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC Reviewed
Masashi Kato, Yuto Mori, Masaya Ichimura
Materials Science Forum 778-780 293 - 296 2014.02
Authorship：Lead author Language：English Publishing type：Research paper (international conference proceedings)
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Efficiency of a solar cell with intermediate energy levels: An example study on hydrogen implanted Si solar cells Reviewed
Masaya Ichimura, Hiromu Sakakibara, Koji Wada, Masashi Kato
Journal of Applied Physics 114 ( 11 ) 114505-1 - 114505-6 2013.09
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/1.4821286
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Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate Reviewed
Masashi Kato, Atsushi Yoshida, Masaya Ichimura, Hiroyuki Nagasawa
Physica Status Solidi A 210 ( 9 ) 1719 - 1725 2013.09
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Performance Improvement of the Analog ANC Circuit for a Duct by Insertion of an All-Pass Filter Reviewed
Tatsuki HYODO,Gaku ASAKURA,Kiwamu TSUKADA,Masashi KATO
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences E96-A ( 4 ) 824 - 825 2013.04
Language：English Publishing type：Research paper (scientific journal)
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Leakage Current Suppression Using Passivation of Defect by Anodic Oxidation for 4H-SiC Schottky Contacts Reviewed
Masashi Kato, Masaya Kimura, Masaya Ichimura
Japanese Journal of Applied Physics 52 04CP02-1 - 04CP02-5 2013.02
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
-
Solar-to-hydrogen conversion efficiency of water photolysis with epitaxially grown p-type SiC Reviewed
Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama
Materials Science Forum 740-742 859 - 862 2013.02
Language：English Publishing type：Research paper (international conference proceedings)
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Deep levels in p-type 4H-SiC induced by low-energy electron irradiation Reviewed
Kazuki YOSHIHARA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA, Takeshi OHSHIMA
Materials Science Forum 740-742 373 - 376 2013.02
Language：English Publishing type：Research paper (international conference proceedings)
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構築型スライドの事前提供と学生指名によるインタラクティブ授業の試み Reviewed
加藤正史
電気学会論文誌Ａ 基礎・材料・共通部門誌 132 ( 12 ) 1120 - 1121 2012.12
Authorship：Lead author Language：Japanese Publishing type：Research paper (scientific journal)
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アンケート調査に基づく高校生を対象とした啓発活動に関する一検討 Reviewed
平田晃正,加藤正史,江龍修,丸田章博
電気学会論文誌Ａ 基礎・材料・共通部門誌 132 ( 12 ) 1124 - 1125 2012.12
Language：Japanese Publishing type：Research paper (scientific journal)
-
卒業研究記録ノートの導入による卒業研究実施状況および達成度の把握 Reviewed
加藤正史,江龍修,大原繁男
電気学会論文誌Ａ 基礎・材料・共通部門誌 132 ( 12 ) 1122 - 1123 2012.12
Authorship：Lead author Language：Japanese Publishing type：Research paper (scientific journal)
-
SiC photoelectrodes for a self-driven water-splitting cell Reviewed
Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama
APPLIED PHYSICS LETTERS 101 053902-1 - 053902-3 2012.07
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/1.4740079
-
Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material Reviewed
Tomonari Yasuda, Masashi Kato, Masaya Ichimura
Materials Science Forum 717-720 585 - 588 2012.05
Language：English Publishing type：Research paper (international conference proceedings)
-
Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes Reviewed
K. Jarašiūnas, P. Ščajev, T. Malinauskas, M. Kato, E. Ivakin, M. Nesladek, K. Haenen, Ü. Özgür, H. Morkoç
Materials Science Forum 717-720 309 - 312 2012.05
Language：English Publishing type：Research paper (international conference proceedings)
-
Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer Reviewed
Atsushi Yoshida, Masashi Kato, Masaya Ichimura
Materials Science Forum 717-720 305 - 308 2012.05
Language：English Publishing type：Research paper (international conference proceedings)
-
Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation Reviewed
Masashi Kato, Yoshinori Matsushita, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima
Japanese Journal of Applied Physics 51 ( 2 ) 028006 2012.02
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
-
Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers Reviewed
Masashi Kato, Atsushi Yoshida, Masaya Ichimura
Japanese Journal of Applied Physics 51 ( 2 ) 02BP12-1 - 02BP12-6 2012.02
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
-
On applicability of time-resolved optical techniques for characterization of differently grown 3C-SiC crystals and heterostructures Reviewed
P. Ščajev, P. Onufrijevs, G. Manolis, M. Karaliūnas, S. Nargelas, N. Jegenyes, J. Lorenzzi, G. Ferro, M. Beshkova, R. Vasiliauskas, M. Syväjärvi, R. Yakimova, M. Kato, and K. Jarašiūnas
Materials Science Forum 711 159 - 163 2012.01
Language：English Publishing type：Research paper (international conference proceedings)
-
Active Noise Control in a Duct by an Analog Neural Network Circuit Reviewed
Masashi Kato
Applied Acoustics 72 ( 10 ) 732 - 736 2011.10
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
-
A diffraction-based technique for determination of interband absorption coefficients in bulk 3C-, 4H- and 6H-SiC crystals Reviewed
Patrik Scajev, Masashi Kato, and Kestutis Jarasiunas
JOURNAL OF PHYSICS D: APPLIED PHYSICS 44 365402-1 - 365402-8 2011.09
Language：English Publishing type：Research paper (scientific journal)
-
Investigation of time series change and difference between universities in motivation for university entrance of students studying electrical and electronic engineering Reviewed
Masashi Kato, Akimasa Hirata, Shigeo Ohara, Osamu Eryu, Akihiro Maruta
131 ( 8 ) 635 - 636 2011.08
Authorship：Lead author Language：Japanese Publishing type：Research paper (scientific journal)
-
Comparative studies of carrier dynamics in 3C-SiC layers grown on Si and 4H-SiC substrates Reviewed
P. Ščajev, J. Hassan, K. Jarašiūnas, M. Kato, A. Henry, J. P. Bergman
Journal of Electronic Materials 40 ( 4 ) 394 - 399 2011.04
Language：English Publishing type：Research paper (scientific journal)
-
Electrical parameters of bulk 3C-SiC crystals determined by Hall effect, magnetoresistivity, and contactless time-resolved optical techniques Reviewed
P. Ščajev, A. Mekys, P. Malinovskis, J. Storasta, M. Kato, K. Jarašiūnas
Materials Science Forum 679-680 157 - 160 2011.04
Language：English Publishing type：Research paper (international conference proceedings)
-
Improvement of Schottky contact characteristics by anodic oxidation of 4H-SiC Reviewed
Masaya Kimura, Masashi Kato, Masaya Ichimura
Materials Science Forum 679-680 461 - 464 2011.04
Language：English Publishing type：Research paper (international conference proceedings)
-
Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO Reviewed
Masashi Kato, Hidenori Ono, Masaya Ichimura, Gan Feng, Tsunenobu Kimoto
Japanese Journal of Applied Physics 50 ( 3 ) 036603-1 - 036603-4 2011.03
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
-
Internal Stresses in Free-Standing 3C-SiC Grown on Si and Their Relation to Carrier Lifetime Reviewed
V. Grivickas, G. Manolis, K. Gulbinas, J. Linnros, M. Kato
AIP Conf. Proc. 1292 91 - 94 2010.11
Language：English Publishing type：Research paper (international conference proceedings)
-
Deep levels affecting the resistivity in semi-insulating 6H–SiC Reviewed
M. Kato (加藤正史), K. Kito (鬼頭孝輔), and M. Ichimura (市村正也)
Journal of Applied Physics 108 ( 5 ) 053718 2010.09
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/1.3481095
Other Link： http://link.aip.org/link/?JAP/108/053718
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Correlation between Schottky contact characteristics and regions with a low barrier height revealed by the electrochemical deposition on 4H-SiC Reviewed
Materials Science Forum 645-648 669 - 672 2010.04
Language：English Publishing type：Research paper (other academic)
-
Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method Reviewed
Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA and Takeshi OHSHIMA
Materials Science Forum 645-648 207 - 210 2010.04
Language：English Publishing type：Research paper (other academic)
-
Nonequilibrium carrier recombination in highly excited bulk SiC crystals Reviewed
K. Jarašiūnas, P. Ščajev, V. Gudelis, P. B. Klein, and M. Kato
Materials Science Forum 645-648 215 - 218 2010.04
Language：English Publishing type：Research paper (other academic)
-
学習・教育目標を利用した要素別GPA分析による学修指導の試み Reviewed
大原繁男、森田良文、平田晃正、加藤正史、江龍修
電気学会論文誌Ａ 基礎・材料・共通部門誌 130 ( 1 ) 123 - 124 2010.01
Language：Japanese Publishing type：Research paper (scientific journal)
-
Excess carrier recombination lifetime of bulk n-type 3C-SiC Reviewed
Vytautas Grivickas, Georgios Manolis, Karolis Gulbinas, Kestutis Jarašiūnas, Masashi KATO
APPLIED PHYSICS LETTERS 95 242110 2009.12
Publishing type：Research paper (scientific journal)
-
Annealing Study of the electrochemically Deposited InSxOy Thin Film and Its Photovoltaic Application Reviewed
Ashraf M. Abdel HALEEM, Masashi KATO, Masaya ICHIMURA
IEICE TRANS. ELECTRON. E92C ( 12 ) 1464 - 1469 2009.12
Publishing type：Research paper (scientific journal)
-
Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition Reviewed
Masashi KATO, Kazuya OGAWA, Masaya ICHIMURA
Materials Science Forum 600-603 373 - 376 2009.04
Publishing type：Research paper (other academic)
-
Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy Reviewed
Masashi KATO, Kosuke KITO, Masaya ICHIMURA
Materials Science Forum 615-617 381 - 384 2009.04
Publishing type：Research paper (scientific journal)
-
Characterization of plasma etching damage on p-type GaN using Schottky diodes Reviewed
Masashi KATO, Kazuki MIKAMO, Masaya ICHIMURA, Masakazu KANECHIKA, Osamu ISHIGURO, Tetsu KACHI
Journal of Applied Physics 103 93701 2008.05
Publishing type：Research paper (scientific journal)
-
Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition
Masashi KATO, Hidenori ONO, Kazuya OGAWA, Masaya ICHIMURA
Technical Digest of 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 357 - 361 2008.04
Publishing type：Research paper (other academic)
-
Low-Power Switched Current Memory Cell with CMOS-type Configuration Reviewed
Masashi KATO, Nobuyuki TERADA, Hirofumi OHATA, Eisuke ARAI
IEICE Transaction on Electronics E91C ( 1 ) 120 - 121 2008.01
Publishing type：Research paper (scientific journal)
-
Observation of Inhomogeneity of Schottky Barrier Height on 4H-SiC Using the Electrochemical Deposition Reviewed
Masashi Kato, Kazuya Ogawa, Masaya Ichimura
Japanese Journal of Applied Physics 46 ( 41 ) L997–L999 2007.10
Publishing type：Research paper (scientific journal)
-
Excess Carrier Lifetime in a Bulk p-type 4H-SiC Wafer Measured by the Microwave Photoconductivity Decay Method Reviewed
Masashi KATO, Masahiko KAWAI, Tatsuhiro MORI, Masaya ICHIMURA, Shingo SUMIE, Hidehisa HASHIZUME
Japanese Journal of Applied Physics 46 ( 8 ) 5057 - 5061 2007.08
Publishing type：Research paper (scientific journal)
-
Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes Reviewed
Masashi KATO, Kazuki MIKAMO, Masaya ICHIMURA, Masakazu KANECHIKA, Osamu ISHIGURO, Tetsu KACHI
Technical Digest of 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2007.06
Publishing type：Research paper (other academic)
-
Analysis of plasma etching damages in GaN by excess carrier lifetime measurements Reviewed
Masashi KATO, Keisuke FUKUSHIMA, Masaya ICHIMURA, Masakazu KANECHIKA, Osamu ISHIGURO, Tetsu KACHI
Technical Digest of 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2007.06
Publishing type：Research paper (other academic)
-
Excess Carrier Lifetimes in a Bulk p-type SiC Wafer Measured by the Microwave Photoconductivity Decay Method Reviewed
Masahiko KAWAI, Tatsuhiro MORI, Masashi KATO, Masaya ICHIMURA, Shingo SUMIE, Hidehisa HASHIZUME
Materials Science Forum 556-557 2007.04
Publishing type：Research paper (scientific journal)
-
Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method Reviewed
Hideki Watanabe, Masashi Kato, Masaya Ichimura, Eisuke Arai, Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi
Japanese Journal of Applied Physics 46 ( 1 ) 35 - 39 2007.01
Publishing type：Research paper (scientific journal)
-
Optical cross sections of deep levels in 4H-SiC Reviewed
M. KATO, S. TANAKA, M. ICHIMURA, E. ARAI, S. NAKAMURA, T. KIMOTO, R. PAESSLER
Journal of Applied Physics 100 53708 2006.09
Publishing type：Research paper (scientific journal)
-
Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution Reviewed
Tatsuhiro MORI, Masashi KATO, Hideki WATANABE, Masaya ICHIMURA, Eisuke ARAI, Shingo SUMIE, Hidehisa HASHIZUME
Japanese Journal of Applied Physics 44 8333 - 8339 2005.12
Publishing type：Research paper (scientific journal)
-
Excess Carrier Lifetime Measurements for GaN on Sapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity Decay Method Reviewed
Masashi Kato, Hideki Watanabe, Masaya Ichimura, and Eisuke Arai
Proceedings of Materials Research Society 831 E3.3.107 - 111 2005.04
Publishing type：Research paper (other academic)
-
Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition Reviewed
Masashi KATO, Shoichi TANAKA, Masaya ICHIMURA, Eisuke ARAI, Shun-ichi NAKAMURA, Tsunenobu KIMOTO
Materials Science Forum 483-485 381 - 384 2005.01
Publishing type：Research paper (scientific journal)
-
Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Shingo SUMIE, Hidehisa HASHIDUME
Materials Science Forum 457-460 505 - 508 2004.06
Publishing type：Research paper (scientific journal)
-
Electrochemical oxidation and etching of 6H-SiC
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI
Recent Res. Devel. Electrochem. 7 45 - 70 2004.04
Publishing type：Research paper (scientific journal)
-
Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy Reviewed
Yohei NAKAKURA, Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Yutaka TOKUDA, Shigehiro NISHINO
Journal of Applied Physics 94 ( 5 ) 3233 - 3238 2003.09
Publishing type：Research paper (scientific journal)
-
Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Yutaka TOKUDA
Defect and Diffusion Forum 218-220 2003.08
Publishing type：Research paper (scientific journal)
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Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Perumalsamy RAMASAMY
Japanese Journal of Applied Physics 42 ( 7A ) 4233 - 4236 2003.07
Publishing type：Research paper (scientific journal)
-
Electrochemical etching of n-type 6H-SiC using aqueous KOH solutions Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Perumalsamy RAMASAMY
Materials Science Forum 433-436 665 - 668 2003.07
Publishing type：Research paper (scientific journal)
-
Etch pit observation for 6H-SiC by electrochemical etching using an Aqueous KOH solution Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Perumalsamy RAMASAMY
Journal of Electrochemical Society 150 C208 2003.04
Publishing type：Research paper (scientific journal)
-
Deep center passivation in 3C-SiC by hydrogen plasma with a grid for damage suppression Reviewed
Masashi KATO, Fumitaka SOBUE, Masaya ICHIMURA, Eisuke ARAI, Noboru YAMADA, Yutaka TOKUDA, Tsugunori OKUMURA
Solid-State Electronics 46 2099 2002.12
Publishing type：Research paper (scientific journal)
-
Characterization of deep levels in 3C-SiC by optical-capacitance-transient spectroscopy Reviewed
Yohei NAKAKURA, Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Yutaka TOKUDA
Proceedings of Materials Research Society Symposium 719 167 2002.10
Publishing type：Research paper (other academic)
-
Deep level study in epitaxial 4H-SiC grown on substrates inclined toward <1100> Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Shigehiro NISHINO
Proceedings of Materials Research Society Symposium 719 457 2002.10
Publishing type：Research paper (other academic)
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Characteristics of Schottky diodes on 6H-SiC surfaces after sacrificial anodic oxidation Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI
Materials Science Forum 389-393 933 2002.01
Publishing type：Research paper (other academic)
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Sacrificial Anodic Oxidation of 6H-SiC Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI
Japanese Journal of Applied Physics 40 L1145 2001.11
Publishing type：Research paper (scientific journal)
-
Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Yasuichi MASUDA, Yi CHEN, Shigehiro NISHINO, Yutaka TOKUDA
Japanese Journal of Applied Physics 40 4943 2001.08
Publishing type：Research paper (scientific journal)
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Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment Reviewed
Masashi KATO, Fumitaka SOBUE, Masaya ICHIMURA, Eisuke ARAI, Noboru YAMADA, Yutaka TOKUDA, Tsugunori OKUMURA
Japanese Journal of Applied Physics 40 2983 2001.04
Publishing type：Research paper (scientific journal)
-
DLTS study of 3C-SiC grown on Si using hexamethyldisilane Reviewed
Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Yasuichi MASUDA, Yi CHEN, Shigehiro NISHINI, Yutaka TOKUDA
Proceedings of Materials Research Society Symposium 622 T - 4.3 2000.10
Publishing type：Research paper (other academic)
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Search for midgap levels in 3C-SiC grown on Si substrates Reviewed
Noboru YAMADA, Masashi KATO, Masaya ICHIMURA, Eisuke ARAI, Yutaka TOKUDA
Japanese Journal of Applied Physics 38 L1094 1999.10
Publishing type：Research paper (scientific journal)
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