Papers - KATO Masashi
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Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers Reviewed International journal
Masashi Kato, Takato Asada, Takuto Maeda, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi
Journal of Applied Physics 129 ( 11 ) 115701 2021.03
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/5.0041287
Other Link： https://doi.org/10.1063/5.0041287
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Nondestructive measurements of depth distribution of carrier lifetimes in 4H-SiC thick epitaxial layers using time-resolved free carrier absorption with intersectional lights Reviewed International journal
Takashi Hirayama, Keisuke Nagaya, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato
Review of Scientific Instruments 91 ( 12 ) 123902 2020.12
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP Publishing LLC
DOI： 10.1063/5.0018080
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Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy Reviewed International journal
Yongzhao Yao, Yoshihiro Sugawara, Daisaku Yokoe, Koji Sato, Yukari Ishikawa, Narihito Okada, Kazuyuki Tadatomo, Masaki Sudo, Masashi Kato, Makoto Miyoshi, Takashi Egawa
CrystEngComm 22 8299 - 8312 2020.10
Language：English Publishing type：Research paper (scientific journal) Publisher：Royal Society of Chemistry
DOI： 10.1039/D0CE01344G
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Observation of carrier lifetime distribution in 4H-SiC thick epilayers using microscopic time-resolved free carrier absorption system Reviewed International journal
K. Nagaya, T. Hirayama, T. Tawara, K. Murata, H. Tsuchida, A. Miyasaka, K. Kojima, T. Kato, H. Okumura, M. Kato
Journal of Applied Physics 128 105702-1 - 105702-7 2020.09
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/5.0015199
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Mapping of large structural defects in SiC Schottky contacts using internal photoemission microscopy Reviewed International journal
Kenji Shiojima, Masashi Kato
Materials Science in Semiconductor Processing 118 105182-1 - 105182-12 2020.05
Language：English Publishing type：Research paper (scientific journal)
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Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces Reviewed International journal
Masashi Kato, Zhang Xinchi, Kimihiro Kohama, Shuhei Fukaya, Masaya Ichimura
Journal of Applied Physics 127 195702-1 - 195702-7 2020.05
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/5.0007900
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Highly efficient 3C-SiC photocathodes with texture structures formed by electrochemical etching Reviewed International journal
Masashi Kato, Tomohiro Ambe
Applied Physics Express 13 026506 2020.02
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Heat shock protein 70 is a key molecule to rescue imbalance caused by low‑frequency noise Reviewed International coauthorship International journal
Reina Negishi‑Oshino, Nobutaka Ohgami, Tingchao He, Xiang Li, Masashi Kato, Masayoshi Kobayashi, Yishuo Gu, Kanako Komuro, Charalampos E. Angelidis, Masashi Kato
Archives of Toxicology 2019.10
Language：English Publishing type：Research paper (scientific journal)
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Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates Reviewed International journal
Masashi Kato, Naoto Ichikawa, Yoshitaka Nakano
Materials Letters 254 96 - 98 2019.07
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Effects of Nb Doping on the Photocatalytic Performance of Rutile TiO2 Single Crystals Reviewed International journal
Masashi Kato, Hayao Najima, Takaya Ozawa
Journal of The Electrochemical Society 166 ( 10 ) H468 - H472 2019.06
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1149/2.1231910jes
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Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method Invited Reviewed International journal
Takato Asada, Yoshihito Ichikawa, Masashi Kato
Journal of Visualized Experiments 146 e59007 2019.04
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.3791/59007
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RECOMBINATION AND DIFFUSION PROCESSES IN ELECTRONIC GRADE 4H SILICON CARBIDE Reviewed International coauthorship International journal
P. Ščajev, L. Subačius, K. Jarašiūnas, M. Kato
Lithuanian Journal of Physics 59 ( 1 ) 26 - 34 2019.04
Language：English Publishing type：Research paper (scientific journal)
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Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction Reviewed International journal
Ajinkya K. Ranade, Rakesh D. Mahyavanshi, Pradeep Desai, Masashi Kato, Masaki Tanemura, Golap Kalita
Applied Physics Letters 114 151102 2019.04
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/1.5084190
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Impact of intrinsic defects on excitation dependent carrier lifetime in thick4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques Reviewed International coauthorship International journal
Patrik Ščajev, Saulius Miasojedovas, Liudvikas Subačius, Kęstutis Jarašiūnas, Alexander V. Mazanik , Olga V. Korolik, Masashi Kato
Journal of Luminescence 212 92 - 98 2019.04
Language：English Publishing type：Research paper (scientific journal)
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Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC Reviewed International journal
Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, and Tsunenobu Kimoto
Journal of Applied Physics 124 ( 9 ) 095702 2018.09
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/1.5042561
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Passivation of surface recombination at the Si-face of 4H-SiC by acidic solutions Reviewed International journal
Yoshihito Ichikawa, Masaya Ichimura, Tsunenobu Kimoto, Masashi Kato
the ECS Journal of Solid State Science and Technology 7 ( 8 ) Q127 - Q130 2018.06
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1149/2.0031808jss
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Expansion of a single Shockley stacking fault in a 4H-SiC (1120) epitaxial layer caused by electron beam irradiation Reviewed International journal
Yukari Ishikawa, Masaki Sudo, Yong-Zhao Yao, Yoshihiro Sugawara, Masashi Kato
JOURNAL OF APPLIED PHYSICS 123 225101-1 - 225101-6 2018.06
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/1.5026448
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Increased expression level of Hsp70 in the inner ears of mice by exposure to low frequency noise Reviewed International coauthorship International journal
Hiromasa Ninomiya, Nobutaka Ohgami, Reina Oshino, Masashi Kato, Kyoko Ohgami, Xiang Li, Dandan Shen, Machiko Iida, Ichiro Yajima, Charalampos E. Angelidis, Hiroaki Adachi, Masahisa Katsuno, Gen Sobue, Masashi Kato
Hearing Research 363 49 - 54 2018.06
Language：English Publishing type：Research paper (scientific journal)
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Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation Reviewed International journal
Masaki Sudo, Yukari Ishikawa, Yong Zhao Yao, Yoshihiro Sugawara, Masashi Kato
Materials Science Forum 924 151 - 154 2018.06
Language：English Publishing type：Research paper (international conference proceedings)
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Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC Reviewed International journal
Shinichi Mae, Takeshi Tawara, Hidekazu Tsuchida, Masashi Kato
Materials Science Forum 924 269 - 272 2018.06
Language：English Publishing type：Research paper (international conference proceedings)
