Papers - KATO Masashi
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Identification of structures of the deep levels in 4H-SiC Reviewed
Hiroki Nakane, Masashi Kato, Masaya Ichimura, Takeshi Ohshima
Materials Science Forum 778-780 277 - 280 2014.02
Language：English Publishing type：Research paper (international conference proceedings)
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Impact of carrier lifetime on efficiency of photolytic hydrogen generation by p-type SiC Reviewed
Keiko Miyake, Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima
Materials Science Forum 778-780 503 - 506 2014.02
Language：English Publishing type：Research paper (international conference proceedings)
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Estimation of surface recombination velocities for n-type 4H-SiC surfaces treated by various processes Reviewed
Yuto Mori, Masashi Kato, Masaya Ichimura
Materials Science Forum 778-780 432 - 435 2014.02
Language：English Publishing type：Research paper (international conference proceedings)
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Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC Reviewed
Masashi Kato, Yuto Mori, Masaya Ichimura
Materials Science Forum 778-780 293 - 296 2014.02
Authorship：Lead author Language：English Publishing type：Research paper (international conference proceedings)
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Efficiency of a solar cell with intermediate energy levels: An example study on hydrogen implanted Si solar cells Reviewed
Masaya Ichimura, Hiromu Sakakibara, Koji Wada, Masashi Kato
Journal of Applied Physics 114 ( 11 ) 114505-1 - 114505-6 2013.09
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/1.4821286
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Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate Reviewed
Masashi Kato, Atsushi Yoshida, Masaya Ichimura, Hiroyuki Nagasawa
Physica Status Solidi A 210 ( 9 ) 1719 - 1725 2013.09
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Performance Improvement of the Analog ANC Circuit for a Duct by Insertion of an All-Pass Filter Reviewed
Tatsuki HYODO,Gaku ASAKURA,Kiwamu TSUKADA,Masashi KATO
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences E96-A ( 4 ) 824 - 825 2013.04
Language：English Publishing type：Research paper (scientific journal)
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Leakage Current Suppression Using Passivation of Defect by Anodic Oxidation for 4H-SiC Schottky Contacts Reviewed
Masashi Kato, Masaya Kimura, Masaya Ichimura
Japanese Journal of Applied Physics 52 04CP02-1 - 04CP02-5 2013.02
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Solar-to-hydrogen conversion efficiency of water photolysis with epitaxially grown p-type SiC Reviewed
Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama
Materials Science Forum 740-742 859 - 862 2013.02
Language：English Publishing type：Research paper (international conference proceedings)
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Deep levels in p-type 4H-SiC induced by low-energy electron irradiation Reviewed
Kazuki YOSHIHARA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA, Takeshi OHSHIMA
Materials Science Forum 740-742 373 - 376 2013.02
Language：English Publishing type：Research paper (international conference proceedings)
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構築型スライドの事前提供と学生指名によるインタラクティブ授業の試み Reviewed
加藤正史
電気学会論文誌Ａ 基礎・材料・共通部門誌 132 ( 12 ) 1120 - 1121 2012.12
Authorship：Lead author Language：Japanese Publishing type：Research paper (scientific journal)
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アンケート調査に基づく高校生を対象とした啓発活動に関する一検討 Reviewed
平田晃正,加藤正史,江龍修,丸田章博
電気学会論文誌Ａ 基礎・材料・共通部門誌 132 ( 12 ) 1124 - 1125 2012.12
Language：Japanese Publishing type：Research paper (scientific journal)
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卒業研究記録ノートの導入による卒業研究実施状況および達成度の把握 Reviewed
加藤正史,江龍修,大原繁男
電気学会論文誌Ａ 基礎・材料・共通部門誌 132 ( 12 ) 1122 - 1123 2012.12
Authorship：Lead author Language：Japanese Publishing type：Research paper (scientific journal)
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SiC photoelectrodes for a self-driven water-splitting cell Reviewed
Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama
APPLIED PHYSICS LETTERS 101 053902-1 - 053902-3 2012.07
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/1.4740079
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Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material Reviewed
Tomonari Yasuda, Masashi Kato, Masaya Ichimura
Materials Science Forum 717-720 585 - 588 2012.05
Language：English Publishing type：Research paper (international conference proceedings)
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Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes Reviewed
K. Jarašiūnas, P. Ščajev, T. Malinauskas, M. Kato, E. Ivakin, M. Nesladek, K. Haenen, Ü. Özgür, H. Morkoç
Materials Science Forum 717-720 309 - 312 2012.05
Language：English Publishing type：Research paper (international conference proceedings)
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Correlation between Strain and Excess Carrier Lifetime in a 3C-SiC Wafer Reviewed
Atsushi Yoshida, Masashi Kato, Masaya Ichimura
Materials Science Forum 717-720 305 - 308 2012.05
Language：English Publishing type：Research paper (international conference proceedings)
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Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation Reviewed
Masashi Kato, Yoshinori Matsushita, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima
Japanese Journal of Applied Physics 51 ( 2 ) 028006 2012.02
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers Reviewed
Masashi Kato, Atsushi Yoshida, Masaya Ichimura
Japanese Journal of Applied Physics 51 ( 2 ) 02BP12-1 - 02BP12-6 2012.02
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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On applicability of time-resolved optical techniques for characterization of differently grown 3C-SiC crystals and heterostructures Reviewed
P. Ščajev, P. Onufrijevs, G. Manolis, M. Karaliūnas, S. Nargelas, N. Jegenyes, J. Lorenzzi, G. Ferro, M. Beshkova, R. Vasiliauskas, M. Syväjärvi, R. Yakimova, M. Kato, and K. Jarašiūnas
Materials Science Forum 711 159 - 163 2012.01
Language：English Publishing type：Research paper (international conference proceedings)
