Papers - KATO Masashi

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  • 高エネルギーイオン注入を用いた欠陥制御による SiC パワーデバイス劣化抑制 Invited

    原田俊太、坂根　仁、加藤正史

    まてりあ   64 ( 7 )   455 - 460   2025.07

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    Authorship：Last author   Language：Japanese   Publishing type：Research paper (scientific journal)   Publisher：日本金属学会  

  • Bulk and surface recombination of carriers in SiC and related wide band gap semiconductor materials Invited Reviewed International journal

    Masashi Kato

    Japanese Journal of Applied Physics   64   060101-1 - 060101-20   2025.06

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    Authorship：Lead author,　Last author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/adda80

    DOI： 10.35848/1347-4065/adda80

  • Hydrogen and point defect introduction into 4H-SiC by plasma treatment Reviewed International journal

    Tong Li, Hitoshi Sakane, Shunta Harada, Yasuyoshi Kurokawa and Masashi Kato

    Japanese Journal of Applied Physics   64   051003-1 - 051003-5   2025.05

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    Authorship：Last author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/add6f7

    DOI： 10.35848/1347-4065/add6f7

  • Investigating surface recombination velocity and bulk carrier lifetime in lithium tantalate using micro-photoconductance decay techniques Reviewed International journal

    Ntumba Lobo, Liu Huan Xiu, Endong Zhang, Masashi Kato

    Chemical Physics Letters   869   142061-1 - 142061-6   2025.03

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    Authorship：Last author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

  • Observation of point defect and carrier lifetime distributions in hydrogen or helium ion implanted SiC PiN diodes for suppression of bipolar degradation Reviewed International journal

    Masashi Kato, Tong Li, Hitoshi Sakane, Shunta Harada

    Japanese Journal of Applied Physics   64   010901-1 - 010901-4   2025.01

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    Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/ad9fc3

    DOI： 10.35848/1347-4065/ad9fc3

  • Controlled Domain in 3C-SiC Epitaxial Growth on Off-Oriented 4H-SiC Substrates for Improvement of Photocathode Performance Reviewed International journal

    Kongshik Rho, Jun Fujita, Masashi Kato

    ECS Journal of Solid State Science and Technology   13   125002-1 - 125002-5   2024.12

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    Authorship：Last author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： https://doi.org/10.1149/2162-8777/ad9e7a

    DOI： https://doi.org/10.1149/2162-8777/ad9e7a

  • Charge carrier recombination in TiO2 and SrTiO3 single crystals: Impact of CoOx cocatalyst loading Reviewed International journal

    Endong Zhang, Toru Takayoshi, Zhenhua Pan, Masashi Kato

    Journal of Applied Physics   136   205303-1 - 205303-5   2024.11

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    Authorship：Last author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： https://doi.org/10.1063/5.0234709

    DOI： https://doi.org/10.1063/5.0234709

  • Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation Reviewed International journal

    Tong Li, Hitoshi Sakane, Shunta Harada, Masashi Kato

    Applied Physics Express   17   086503-1 - 086503-4   2024.08

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    Authorship：Last author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1882-0786/ad6be5

    DOI： 10.35848/1882-0786/ad6be5

    Other Link： https://iopscience.iop.org/journal/1882-0786

  • Analysis of defects dominating carrier recombination in CeO2 single crystal for photocatalytic applications Reviewed International coauthorship International journal

    Endong Zhang, Christoph J Brabec, Masashi Kato

    Journal of Physics D: Applied Physics   57   305104-1 - 305104-7   2024.05

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    Authorship：Last author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1088/1361-6463/ad42ac

    DOI： 10.1088/1361-6463/ad42ac

  • Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV Reviewed International coauthorship International journal

    Manuel Belanche, Yoshiyuki Yonezawa, Rene Heller, Arnold Muller, Christof Vockenhuber, Corinna Martinella, Michael Rub, Masashi Kato, Koichi Murata, Hidekazu Tsuchida, Koji Nakayama, Ulrike Grossner

    Materials Science in Semiconductor Processing   179   108461-1 - 108461-8   2024.05

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.mssp.2024.108461

    DOI： 10.1016/j.mssp.2024.108461

  • Photoelectrical characterization of heavily doped p-SiC Schottky contacts Reviewed International journal

    Hiroki Imabayashi, Hitose Sawazaki, Haruto Yoshimura, Masashi Kato, Kenji Shiojima

    Japanese Journal of Applied Physics   63 ( 4 )   04SP71-1 - 04SP71-6   2024.04

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/ad32e0

  • Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate Reviewed International journal

    Masashi Kato, Ohga Watanabe, Shunta Harada, Hitoshi Sakane

    Materials Science in Semiconductor Processing   175   108264-1 - 108264-5   2024.02

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    Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.mssp.2024.108264

    DOI： 10.1016/j.mssp.2024.108264

  • Mitigation of carrier trapping effects on carrier lifetime measurements with continuous-wave laser illumination for Pb-based metal halide perovskite materials Reviewed International coauthorship International journal

    Ntumba Lobo, Gebhard J. Matt, Andres Osvet, Shreetu Shrestha, Andrii Kanak, Petro Fochuk, Christoph J. Brabec, Masashi Kato

    Journal of Applied Physics   135   074905-1 - 074905-7   2024.02

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    Authorship：Last author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1063/5.0181654

    DOI： 10.1063/5.0181654

  • Effect of dislocations on carrier recombination and photoelectrochemical activity in polished and unpolished TiO2 and SrTiO3 crystals Reviewed International journal

    Endong Zhang, Mingxin Zhang, Masashi Kato

    Journal of Applied Physics   135   045102-1 - 045102-9   2024.01

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    Authorship：Last author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： https://doi.org/10.1063/5.0181625

    DOI： https://doi.org/10.1063/5.0181625

  • Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective Reviewed International journal

    Masashi Kato, Shunta Harada, Hitoshi Sakane

    Japanese Journal of Applied Physics   63   020804-1 - 020804-6   2024.01

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    Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

  • Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions Reviewed International journal

    Kazuhiro Tanaka, Masashi Kato

    Japanese Journal of Applied Physics   63   011002-1 - 011002-5   2024.01

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    Authorship：Last author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/ad160c

    DOI： 10.35848/1347-4065/ad160c

  • Unravelling material properties of halide perovskites by combined microwave photoconductivity and time-resolved photoluminescence spectroscopy Reviewed International coauthorship International journal

    Journal of Materials Chemistry C   2023.12

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1039/d3tc03867j

  • Surface recombination velocities for 4H–SiC: Dependence of excited carrier concentration and surface passivation Reviewed International journal

    Masashi Kato, Ayato Ogawa, Lei Han, Tomohisa Kato

    Materials Science in Semiconductor Processing   170   107980-1 - 107980-5   2023.11

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    Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.mssp.2023.107980

    DOI： 10.1016/j.mssp.2023.107980

  • Analysis of carrier recombination coefficients of 3C-and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC Reviewed International journal

    Kazuhiro Tanaka, Masashi Kato

    AIP Advances   13   085220   2023.08

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    Authorship：Last author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1063/5.0157696

  • Development of an angle detection system for channeling implantation to the c-axis of SiC using birefringence phenomenon Reviewed International journal

    Masashi Kato, Takumi Maruhashi, Hisaya Sato, Yoshiyuki Yonezawa

    62   068003-1 - 068003-3   2023.06

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    Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/acdcd8

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