Papers - MIYOSHI Makoto
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Metalorganic chemical vapor deposition and material characterization of lattice-matched InAlN/GaN two-dimensional electron gas heterostructures Reviewed International journal
M. Miyoshi, Y. Kuraoka, M. Tanaka, T. Egawa
Applied Physics Express 1 ( 8 ) 081102-1 - 081102-3 2008.06
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.1143/APEX.1.081102/meta
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Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes Reviewed International journal
J. C. Zhang, Y. H. Zhu, T. Egawa, S. Sumiya, M. Miyoshi, M. Tanaka
Applied Physics Letters 92 ( 19 ) 191917-1 - 191917-3 2008.05
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.2931698
Other Link： http://scitation.aip.org/content/aip/journal/apl/92/19/10.1063/1.2931698
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Improved performance of 264 nm emission AIGaN-based deep ultraviolet light-emitting diodes Reviewed International journal
Y. H. Zhu, S. Sumiya, J. C. Zhang, M. Miyoshi, T. Shibata, K. Kosaka, M. Tanaka, T. Egawa
Electronics Letters 44 ( 7 ) 493 - 495 2008.03
Language：English Publishing type：Research paper (scientific journal) Publisher：The Institution of Engineering and Technology
DOI： 10.1049/el:20082753
Other Link： http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=4479563&abstractAccess=no&userType=inst
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AlGaN-based deep ultraviolet light-emitting diodes grown on epitaxial AlN/sapphire templates Reviewed International journal
S. Sumiya, Y. Zhu, J. Zhang, K. Kosaka, M. Miyoshi, T. Shibata, M. Tanaka, T. Egawa
Japanese Journal of Applied Physics 47 ( 1 ) 43 - 46 2008.01
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.1143/JJAP.47.43
Other Link： http://iopscience.iop.org/article/10.1143/JJAP.47.43/meta
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Quantum-well and localized state emissions in AlInGaN deep ultraviolet light-emitting diodes Reviewed International journal
J. C. Zhang, Y. H. Zhu, T. Egawa, S. Sumiya, M. Miyoshi, M. Tanaka
Applied Physics Letters 91 ( 22 ) 221906-1 - 221906-3 2007.11
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.2817947
Other Link： http://scitation.aip.org/content/aip/journal/apl/91/22/10.1063/1.2817947
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Improved reverse blocking characteristics in AlGaN/GaN Schottky barrier diodes based on AlN template Reviewed International journal
M. Miyoshi, Y. Kuraoka, K. Asai, T. Shibata, M. Tanaka, T. Egawa
Electronics Letters 43 ( 17 ) 953 - 954 2007.08
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Institution of Engineering and Technology
DOI： 10.1049/el:20071141
Other Link： http://digital-library.theiet.org/content/journals/10.1049/el_20071141
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Electrical characterization of Pt/AlGaN/GaN Schottky diodes grown using AlN template and their application to hydrogen gas sensors Reviewed International journal
M. Miyoshi, Y. Kuraoka, K. Asai, T. Shibata, M. Tanaka, T. Egawa
Journal of Vacuum Science & Technology B 25 ( 4 ) 1231 - 1235 2007.06
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/1.2749530
Other Link： http://scitation.aip.org/content/avs/journal/jvstb/25/4/10.1116/1.2749530
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Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN Interfacial layer Reviewed International journal
M. Miyoshi, T. Egawa, H. Ishikawa
Solid-State Electronics 50 ( 9-10 ) 1515 - 1521 2006.09
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.sse.2006.07.016
Other Link： http://www.sciencedirect.com/science/article/pii/S0038110106002759
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High speed turn-on reverse conducting 4 kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators Reviewed International journal
N. Shimizu, M. Miyoshi, S. Tange, T. Sekiya, T. Ito, T. Sakuma, T. Sakurai, T. Terasawa, M. Hatano, S. Hotta, Y. Imanishi, A. Okimoto, M. Asai, O. Oda, J. Nishizawa
Solid-State Electronics 50 ( 9-10 ) 1567 - 1578 2006.08
Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.sse.2006.08.014
Other Link： http://www.sciencedirect.com/science/article/pii/S0038110106002917?np=y
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Study on MOVPE growth of III-nitrides heteroepitaxial films and their application to electronic devices Reviewed
Makoto Miyoshi
2006.03
Authorship：Lead author, Last author, Corresponding author Language：English Publishing type：Doctoral thesis
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Nanostructural characterization and two-dimensional-electron gas properties in high-mobility AlGaN/AlN/GaN heterostructures grown on epitaxial AlN/sapphire templates Reviewed International journal
M. Miyoshi, T. Egawa, H. Ishikawa, K. Asai, T. Shibata, M. Tanaka, O. Oda
Journal of Applied Physics 98 ( 6 ) 063713-1 - 063713-5 2005.09
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.2060946
Other Link： http://scitation.aip.org/content/aip/journal/jap/98/6/10.1063/1.2060946
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DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AlN/sapphire templates Reviewed International journal
M. Miyoshi, A. Imanishi, T. Egawa, H. Ishikawa, K. Asai, T. Shibata, M. Tanaka, O. Oda
Japanese Journal of Applied Physics Part 1 44 ( 9A ) 6490 - 6494 2005.09
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.1143/JJAP.44.6490
Other Link： http://iopscience.iop.org/article/10.1143/JJAP.44.6490/meta
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Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties Reviewed International journal
M. Miyoshi, T. Egawa, H. Ishikawa
Journal of Vacuum Science & Technology B 23 ( 4 ) 1527 - 1531 2005.07
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/1.1993619
Other Link： http://scitation.aip.org/content/avs/journal/jvstb/23/4/10.1116/1.1993619
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Investigation of boron diffusion into silicon using a liquid boron tribromide source and its application to buried-gate-type static-induction thyristors Reviewed International journal
M. Miyoshi, N. Shimizu, Y. Imanishi, O. Oda, J. Nishizawa
Journal of The Electrochemical Society 152 ( 8 ) G601 - G607 2005.02
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Electrochemical Society
DOI： 10.1149/1.1938007
Other Link： http://jes.ecsdl.org/content/152/8/G601.short
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Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates Reviewed International journal
M. Miyoshi, A. Imanishi, H. Ishikawa, T. Egawa, K. Asai, T. Shibata, M. Tanaka, O. Oda
Technical Digest of 2004 IEEE International Electron Devices Meeting - IEDM 2004 1031 - 1034 2004.12
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE
DOI： 10.1109/IEDM.2004.1419366
Other Link： http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1419366
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MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates Reviewed International journal
M. Miyoshi, M. Sakai, H. Ishikawa, T. Egawa, T. Jimbo, M. Tanaka, O. Oda
Journal of Crystal Growth 272 ( 1-4 ) 293 - 299 2004.12
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.jcrysgro.2004.08.117
Other Link： http://www.sciencedirect.com/science/article/pii/S0022024804010875
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Characterization of different-Al-content AlGaN/GaN heterostructures and high-electron-mobility transistors grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy Reviewed International journal
M. Miyoshi, M. Sakai, S. Arulkumaran, H. Ishikawa, T. Egawa, M. Tanaka, O. Oda
Japanese Journal of Applied Physics 43 ( 12R ) 7939 - 7943 2004.12
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.1143/JJAP.43.7939
Other Link： http://iopscience.iop.org/article/10.1143/JJAP.43.7939/meta
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High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE Reviewed International journal
M. Miyoshi, A. Imanish, H. Ishikawa, T.Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda
Extended Abstracts of 2004 IEEE Compound Semiconductor Integrated Circuit Symposium - CSICS 2004 193 - 196 2004.10
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE
DOI： 10.1109/CSICS.2004.1392534
Other Link： http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1392534&tag=1
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High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy Reviewed International journal
M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda
Applied Physics Letters 85 ( 10 ) 1710 - 1712 2004.07
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.1790073
Other Link： http://scitation.aip.org/content/aip/journal/apl/85/10/10.1063/1.1790073
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Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE Reviewed International journal
M. Miyoshi, H. Ishikawa, T. Egawa, T. Jimbo
Physica Status Solidi C: Current Topics in Solid State Physics 0 ( 7 ) 2091 - 2094 2003.11
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
Other Link： http://onlinelibrary.wiley.com/doi/10.1002/pssc.200303445/abstract
