Papers - MIYOSHI Makoto
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Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films Reviewed International journal
Toshiharu Kubo, Akira Takahashi, Makoto Miyoshi, Takashi Egawa
Applied Physics Express 14 ( 11 ) 116503-1 - 116503-3 2021.10
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.35848/1882-0786/ac30ed
Other Link： https://iopscience.iop.org/article/10.35848/1882-0786/ac30ed
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Evaluation of GaInN-based photovoltaic cells under monochromatic light illumination toward the application to the optical wireless power transmission system Reviewed International journal
Taiki Nakabayashi, Kousuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials - SSDM 2021 333 - 334 2021.09
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Japan Society of Applied Physics
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High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer and selective-area regrowth ohmic contacts Reviewed International journal
Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials - SSDM 2021 269 - 270 2021.09
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Japan Society of Applied Physics
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Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations Reviewed International journal
Makoto Miyoshi, Taiki Nakabayashi, Kosuke Yamamoto, Pradip Dalapati, Takashi Egawa
AIP Advances 11 ( 9 ) 095208-1 - 095208-8 2021.09
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0062346
Other Link： https://doi.org/10.1063/5.0062346
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Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy Reviewed International journal
Liyang Li, Kohei Shima, Mizuki Yamanaka, Kazunobu Kojima, Takashi Egawa, Akira Uedono, Shoji Ishibashi, Tetsuya Takeuchi, Makoto Miyoshi, Shigefusa F. Chichibu
Applied Physics Letters 119 ( 9 ) 091105-1 - 091105-6 2021.08
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0066263
Other Link： https://aip.scitation.org/doi/10.1063/5.0066263
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Evaluation of high-performance, self-powered and wavelength-selective InGaN/GaN multiple quantum well UV photodetectors fabricated on sapphire substrate: Analysis of the influence of growth temperature Reviewed International journal
Pradip Dalapati, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Sensors and Actuators A: Physical 331 113050-1 - 113050-11 2021.08
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.sna.2021.113050
Other Link： https://www.sciencedirect.com/science/article/abs/pii/S092442472100515X
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Understanding the degradation mechanisms of InGaN/GaN multiple quantum well UV photodetectors submitted to different current stresses Reviewed International journal
Pradip Dalapati, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Optics Letters 46 ( 15 ) 3568 - 3571 2021.08
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：OSA
DOI： 10.1364/OL.434920
Other Link： https://www.osapublishing.org/ol/abstract.cfm?doi=10.1364/OL.434920
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Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer Reviewed International journal
Pradip Dalapati, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Optik 245 167691-1 - 167691-2 2021.07
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.ijleo.2021.167691
Other Link： https://www.sciencedirect.com/science/article/abs/pii/S0030402621012894
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Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n++-GaN contact layer Reviewed International journal
Makoto Miyoshi, Akiyoshi Inoue, Mizuki Yamanaka, Hiroki Harada, Takashi Egawa
Materials Science in Semiconductor Processing 133 105960-1 - 105960-5 2021.05
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.mssp.2021.105960
Other Link： https://www.sciencedirect.com/science/article/abs/pii/S1369800121003073?dgcid=author
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Demonstration of polarization-induced hole conduction in composition-graded AlInN layers grown by metalorganic chemical vapor deposition Reviewed International journal
Makoto Miyoshi, Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Tetsuya Takeuchi
Applied Physics Letters 118 ( 16 ) 162102-1 - 162102-5 2021.04
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0048751
Other Link： https://aip.scitation.org/doi/10.1063/5.0048751
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Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition Reviewed International journal
Makoto Miyoshi, Mizuki Yamanaka, Takashi Egawa, Narihito Okada, Kazuyuki Tadatomo, Tetsuya Takeuchi
Materials Research Express 8 ( 2 ) 025906-1 - 025906-6 2021.02
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
Other Link： https://iopscience.iop.org/article/10.1088/2053-1591/abe250
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Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire substrate Reviewed International journal
Pradip Dalapati, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Applied Physics Letters 118 ( 2 ) 021101-1 - 021101-5 2021.01
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0027127
Other Link： https://aip.scitation.org/doi/10.1063/5.0027127
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Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy Reviewed International journal
Yongzhao Yao, Yoshihiro Sugawara, Daisaku Yokoe, Koji Sato, Yukari Ishikawa, Narihito Okada, Kazuyuki Tadatomo, Masaki Sudo, Masashi Kato, Makoto Miyoshi, Takashi Egawa
CrystEngComm 22 ( 48 ) 8299 - 8312 2020.12
Language：English Publishing type：Research paper (scientific journal) Publisher：The Royal Society of Chemistry
DOI： 10.1039/D0CE01344G
Other Link： https://pubs.rsc.org/en/content/articlehtml/2020/ce/d0ce01344g?page=search
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Analysis of the optical constants and bandgap energy in Al1-xInxN alloys grown on a c-plane freestanding GaN substrate by using spectroscopic ellipsometry Reviewed International journal
Daichi Imai, Yuto Murakami, Rino Miyata, Hayata Toyoda, Tomoaki Yamaji, Makoto Miyoshi, Tetsuya Takeuchi, Takao Miyajima
Japanese Journal of Applied Physics 59 ( 12 ) 121001-1 - 121001-7 2020.11
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.35848/1347-4065/abc29f
Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/abc29f/meta
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Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition Reviewed International journal
Makoto Miyoshi, Taiki Nakabayashi, Mizuki Yamanaka, Takashi Egawa, Tetsuya Takeuchi
Journal of Vacuum Science & Technology B 38 ( 5 ) 052205-1 - 052205-5 2020.09
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/6.0000284
Other Link： https://avs.scitation.org/doi/10.1116/6.0000284
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Current-induced degradation process in (In)AlGaN-based deep-UV light-emitting diode fabricated on AlN/sapphire template Reviewed International journal
Pradip Dalapati, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Optical Materials 109 110352-1 - 110352-6 2020.09
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.optmat.2020.110352
Other Link： https://www.sciencedirect.com/science/article/abs/pii/S0925346720306935?via%3Dihub
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Metalorganic chemical vapor deposition of over 150-nm-thick quaternary AlGaInN epitaxial films near alloy composition lattice-matching to GaN on sapphire and their structural and optical characterization Reviewed International journal
Makoto Miyoshi, Hiroki Harada, Takashi Egawa, Tetsuya Takeuchi
Physica Status Solidi A: Applications and Materials Science 217 ( 3 ) 1900597-1 - 1900597-6 2019.10
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
Other Link： https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.201900597
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High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator Reviewed International journal
Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi
Journal of Vacuum Science & Technology B 37 ( 4 ) 041205-1 - 041205-4 2019.07
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/1.5097338
Other Link： https://avs.scitation.org/doi/full/10.1116/1.5097338
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450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers Reviewed International journal
Kei Arakawa, Kohei Miyoshi, Ryosuke Iida, Yuki Kato, Tetsuya Takeuchi, Makoto Miyoshi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
Japanese Journal of Applied Physics 58 ( SC ) SCCC28-1 - SCCC28-6 2019.05
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： https://iopscience.iop.org/article/10.7567/1347-4065/ab12ca
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Growth and characterization of quaternary AlGaInN epitaxial films with alloy compositions around lattice-matched to GaN Reviewed International journal
Hiroki Harada, Makoto Miyoshi, Takashi Egawa, Tetsuya Takeuchi
2019 Compound Semiconductor Week, CSW 2019 - Proceedings 2019.05
Authorship：Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE
DOI： 10.1109/ICIPRM.2019.8819345
Other Link： https://ieeexplore.ieee.org/abstract/document/8819345
