Papers - MIYOSHI Makoto
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MOCVD growth and characterization of Si-doped thick-AlInN epitaxial films Reviewed International journal
Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa, Tetsuya Takeuchi
2019 Compound Semiconductor Week, CSW 2019 - Proceedings 2019.05
Authorship：Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE
DOI： 10.1109/ICIPRM.2019.8819059
Other Link： https://ieeexplore.ieee.org/document/8819059
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Device characteristics and MIS interface evaluation of Al2O3/AlGaInN/AlGaN MIS HFET Reviewed International journal
Saki Saito, Daiki Hosomi, Keita Furuoka, Heng Chen, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi
2019 Compound Semiconductor Week, CSW 2019 - Proceedings 2019.05
Authorship：Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE
DOI： 10.1109/ICIPRM.2019.8819229
Other Link： https://ieeexplore.ieee.org/document/8819229/authors#authors
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A 300 nm thick epitaxial AlInN film with a highly flat surface grown almost perfectly lattice-matched to c-plane free-standing GaN substrate Reviewed International journal
Makoto Miyoshi, Mizuki Yamanaka, Takashi Egawa, Tetsuya Takeuchi
Japanese Journal of Applied Physics 58 ( SC ) SC1006-1 - SC1006-4 2019.04
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： https://iopscience.iop.org/article/10.7567/1347-4065/ab040c
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Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition Reviewed International journal
Makoto Miyoshi, Mizuki Yamanaka, Takashi Egawa, Tetsuya Takeuchi
Journal of Crystal Growth 506 40 - 44 2019.01
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.jcrysgro.2018.09.049
Other Link： https://www.sciencedirect.com/science/article/pii/S002202481830486X?via%3Dihub
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Ultrathin inserted AlGaN/InAlN heterojunction for performance improvement in AlGaN-based deep ultraviolet light-emitting diodes Reviewed International journal
Lei Li, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa
Applied Physics Express 12 ( 1 ) 011010-1 - 011010-4 2019.01
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.7567/1882-0786/aaf62b
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Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers Reviewed International journal
Daiki Hosomi, Heng Chen, Takashi Egawa, Makoto Miyoshi
Japanese Journal of Applied Physics 58 ( 1 ) 011004-1 - 011004-5 2018.11
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.7567/1347-4065/aaed2f
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Epitaxial growth and characterization of approximatey 300-nm-thick AlInN films nearly lattice-matched to GaN grown on sapphire Reviewed International journal
Makoto Miyoshi, Mizuki Yamanaka, Takashi Egawa, Tetsuya Takeuchi
Applied Physics Express 11 ( 5 ) 051001-1 - 051001-4 2018.04
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.7567/APEX.11.051001
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Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically smooth heterointerface Reviewed International journal
Daiki Hosomi, Yuta Miyachi, Takashi Egawa, Makoto Miyoshi
Japanese Journal of Applied Physics 57 ( 4S ) 04FG12-1 - 04FG12-4 2018.03
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.7567/JJAP.57.04FG12
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Distinct light emission from two-dimensional electron gas at a lattice-matched InAlN/AlGaN heterointerface Reviewed International journal
Lei Li, Daiki Hosomi, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa
Applied Physics Letters 112 ( 10 ) 102102-1 - 102102-4 2018.03
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.5023847
Other Link： https://aip.scitation.org/doi/10.1063/1.5023847
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A comparative study of InGaN/GaN multiple-quantum-well solar cells grown on sapphire and AlN template by metalorganic chemical vapor deposition Reviewed International journal
Makoto Miyoshi, Miki Ohta, Takuma Mori, Takashi Egawa
Physica Status Solidi A: Applications and Materials Science 215 ( 10 ) 1700323-1 - 1700323-7 2017.12
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
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A comparative study of AlGaN-based PiN type UV photodiodes with and without surface recessed structures Reviewed
Mayuko Okada, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa
Transactions of the Materials Research Society of Japan 42 ( 6 ) 151 - 153 2017.12
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal)
Other Link： https://www.jstage.jst.go.jp/article/tmrsj/42/6/42_151/_article
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Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically-smooth heterointerface Reviewed International journal
Daiki Hosomi, Yuta Miyachi, Takashi Egawa, Makoto Miyoshi
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials - SSDM 2017 635 - 636 2017.09
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Japan Society of Applied Physics
Other Link： https://confit.atlas.jp/guide/event/ssdm2017/subject/N-2-03/advanced
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High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films Reviewed International journal
Lei Li, Daiki Hosomi, Yuta Miyachi, Takeaki Hamada, Makoto Miyoshi, Takashi Egawa
Applied Physics Letters 111 ( 10 ) 102106-1 - 102106-4 2017.09
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.4986311
Other Link： http://aip.scitation.org/doi/full/10.1063/1.4986311
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Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells Reviewed International journal
Takuma Mori, Takashi Egawa, Makoto Miyoshi
Materials Research Express 4 ( 8 ) 085904-1 - 085904-8 2017.08
Authorship：Last author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
Other Link： http://iopscience.iop.org/article/10.1088/2053-1591/aa8147
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Post-deposition annealing effects on the insulator/semiconductor interfaces of Al2O3/AlGaN/GaN structures on Si substrates Reviewed International journal
Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa
Semiconductor Science and Technology 32 ( 6 ) 065012-1 - 065012-5 2017.05
Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
Other Link： http://iopscience.iop.org/article/10.1088/1361-6641/aa6c09/meta
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Al2O3/AlGaN channel normally-off MOSFET on Si with high breakdown voltage Reviewed International journal
Joseph J. Freedsman, Takeaki Hamada, Makato Miyoshi, Takashi Egawa
Electron Device Letters 38 ( 4 ) 497 - 500 2017.02
Language：English Publishing type：Research paper (scientific journal) Publisher：IEEE
Other Link： http://ieeexplore.ieee.org/document/7839208/
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Self-forming graphene/Ni patterns on sapphire utilizing the pattern-controlled catalyst metal agglomeration technique Reviewed International journal
Makoto Miyoshi, Yukinori Arima, Toshiharu Kubo, Takashi Egawa
Applied Physics Letters 110 ( 1 ) 013103-1 - 013103-4 2017.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.4973523
Other Link： http://aip.scitation.org/doi/full/10.1063/1.4973523
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Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells Reviewed International journal
Makoto Miyoshi, Tatsuya Tsutsumi, Tomoki Kabata, Takuma Mori, Takashi Egawa
Solid-State Electronics 129 ( 1 ) 29 - 34 2016.12
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.sse.2016.12.009
Other Link： http://www.sciencedirect.com/science/article/pii/S0038110116303598
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Observation of reaction between a-type dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation Reviewed International journal
Yoshihiro Sugawara, Yukari Ishikawa, Arata Watanabe, Makoto Miyoshi, Takashi Egawa
Journal of Crystal Growth 468 ( 15 ) 536 - 540 2016.11
Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.jcrysgro.2016.11.010
Other Link： http://www.sciencedirect.com/science/article/pii/S0022024816306923
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Modeling of the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer buffer structures Reviewed International journal
Makoto Miyoshi, Arata Watanabe, Takashi Egawa
Semiconductor Science and Technology 31 ( 10 ) 105016-1 - 105016-7 2016.09
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
DOI： 10.1088/0268-1242/31/10/105016
Other Link： http://iopscience.iop.org/article/10.1088/0268-1242/31/10/105016/meta
