Papers - MIYOSHI Makoto
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AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on a single-crystal AlN substrate by metalorganic chemical vapor deposition Reviewed International journal
Yoshinobu Kometani, Tomoyuki Kawaide, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
Japanese Journal of Applied Physics 65 ( 11 ) 111003-1 - 111003-5 2024.11
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.35848/1347-4065/ad85ed
Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ad85ed/meta
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Improved performance of InGaN/GaN multiple-quantum-wells photovoltaic devices on free-standing GaN substrates with TMAH treatment Reviewed International journal
Nan Hu, Takahiro Fujisawa, Akira Mase, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi
Solar Energy Materials and Solar Cells 275 ( 15 ) 113025-1 - 113025-7 2024.07
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
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Characterizations of the sub-bandgap optical absorption in an undoped-GaN and a 90-nm-thick Al1-xInxN thin film on a sapphire substrate grown by MOCVD Reviewed International journal
Kouki Noda, Yuto Murakami, Hayata Toyoda, Kana Shibata, Youna Tsukada, Daichi Imai, Tetsuya Takeuchi, Makoto Miyoshi, Takao Miyajima
Physica Status Solidi B: Basic Solid State Physics 261 2400029-1 - 2400029-7 2024.05
Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
Other Link： https://onlinelibrary.wiley.com/doi/10.1002/pssb.202400029
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Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate Reviewed International journal
Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
Applied Physics Letters 124 ( 18 ) 18210-1 - 18210-4 2024.05
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0187043
Other Link： https://pubs.aip.org/aip/apl/article/124/18/182102/3286954/Current-collapse-suppression-in-AlGaInN-GaN-HEMTs
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Over 43%-power-efficiency GaInN-based photoelectric transducer on free-standing GaN substrate for optical wireless power transmission system Reviewed International journal
Takahiro Fujisawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi
Semiconductor Science and Technology 39 ( 4 ) 045010-1 - 045010-6 2024.02
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
Other Link： https://iopscience.iop.org/article/10.1088/1361-6641/ad2d62
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Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns Reviewed International journal
Yukari Ishikawa, Yoshihiro Sugawara, Yongzhao Yao, Makoto Miyoshi, Takashi Egawa
Journal of Materials Science 59 ( 7 ) 2974 - 2987 2024.02
Language：English Publishing type：Research paper (scientific journal) Publisher：Springer
DOI： https://doi.org/10.1007/s10853-024-09392-z
Other Link： https://link.springer.com/article/10.1007/s10853-024-09392-z#citeas
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Sub-bandgap optical absorption processes in 300-nm-thick Al1-xInxN alloys grown on a c-plane GaN/sapphire template Reviewed International journal
Daichi Imai, Yuto Murakami, Hayata Toyoda, Kouki Noda, Kyosuke Masaki, Kazutoshi Kubo, Mayu Nomura, Takao Miyajima, Makoto Miyoshi, Tetsuya Takeuchi
Journal of Applied Physics 135 ( 3 ) 035703-1 - 035703-8 2024.01
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0181231
Other Link： https://pubs.aip.org/aip/jap/article/135/3/035703/3000640/Sub-bandgap-optical-absorption-processes-in-300-nm
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Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different-hole-concentration p-base layers Reviewed International journal
Akira Mase, Yusuke Iida, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi
Journal of Vacuum Science & Technology B 41 ( 5 ) 052206-1 - 052206-6 2023.09
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/6.0002577
Other Link： https://pubs.aip.org/avs/jvb/article/41/5/052206/2909805/Simulation-analyses-of-carrier-dynamics-in-npn
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Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer Reviewed International journal
Akira Mase, Pradip Dalapati, Ryosuke Hayafuji, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa
Semiconductor Science and Technology 38 ( 9 ) 095005-1 - 095005-6 2023.08
Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
Other Link： https://iopscience.iop.org/article/10.1088/1361-6641/aceaa2
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Current-driven degradation dynamics in GaN/InGaN multi-quantum-wells UV photodetectors fabricated with a high-quality Al2O3 passivation film Reviewed International journal
Pradip Dalapati, Takashi Egawa, Makoto Miyoshi
Vaccum 213 112159-1 - 112159-6 2023.05
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.vacuum.2023.112159
Other Link： https://www.sciencedirect.com/science/article/pii/S0042207X23003561?via%3Dihub
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DC and pulse I-V characteristics of strain-engineered AlGaInN/GaN HEMTs fabricated on single-crystal AlN substrate Reviewed International journal
Makoto Miyoshi, Sakura Tanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa
Physica Status Solidi A: Applications and Materials Science 220 2200733-1 - 2200733-5 2023.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
Other Link： https://onlinelibrary.wiley.com/doi/10.1002/pssa.202200733
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Growth and microstructure analyses of semipolar AlInN epitaxial layers on a fully relaxed semipolar {11-22} GaInN/GaN/m-plane sapphire template Reviewed International journal
Makoto Miyoshi, Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Tetsuya Takeuchi, Narihito Okada, Kazuyuki Tadatomo
Physica Status Solidi B: Basic Solid State Physics 260 2200492-1 - 2200492-8 2023.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
Other Link： https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.202200492
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High temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors: Analysis of photovoltaic and carrier transit time properties Reviewed International journal
Pradip Dalapati, Takashi Egawa, Makoto Miyoshi
Journal of Vacuum Science & Technology B 40 ( 6 ) 062210-1 - 062210-7 2022.11
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： doi.org/10.1116/6.0002101
Other Link： https://avs.scitation.org/doi/10.1116/6.0002101
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Room-temperature nonradiative recombination lifetimes in c-plane Al1-xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21) Reviewed International journal
L. Y. Li, K. Shima, M. Yamanaka, T. Egawa, T. Takeuchi, M. Miyoshi, S. Ishibashi, A.Uedono, S. F. Chichibu
Journal of Applied Physics 132 ( 16 ) 163102-1 - 163102-10 2022.10
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0106540
Other Link： https://aip.scitation.org/doi/10.1063/5.0106540
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Current-induced degradation behaviors of InGaN/GaN multiple-quantum-well UV photodetectors: Role of electrically active defects Reviewed International coauthorship International journal
Pradip Dalapati, Abdulaziz Almalki, Sultan Alhassan, Saud Alotaibi, Maryam Al Huwayz, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi, Mohamed Henini
Sensors and Actuators: A. Physical 347 113935-1 - 113935-8 2022.10
Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： https://doi.org/10.1016/j.sna.2022.113935
Other Link： https://www.sciencedirect.com/science/article/abs/pii/S0924424722005702
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Simulation analyses of carrier dynamics in npn-type GaN-HBTs with different-hole-concentration p-base layers Reviewed International journal
Akira Mase, Yutaka Nikai, Yusuke Iida, Masaya Takimoto, Takashi Egawa, Makoto Miyoshi
2022 Compound Semiconductor Week, CSW 2022 - Proceedings 2022.06
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE
DOI： 10.1109/CSW55288.2022.9930408
Other Link： https://ieeexplore.ieee.org/abstract/document/8819345
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The role of p-GaN layer thickness for the evaluation of high-performance and ultrafast GaInN/GaN multiple quantum wells UV photodetectors Reviewed International journal
Pradip Dalapati, Taiki Nakabayashi, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Optical Materials 127 112284-1 - 112284-9 2022.05
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.optmat.2022.112284
Other Link： https://www.sciencedirect.com/science/article/pii/S0925346722003184?dgcid=coauthor
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Simulation study on novel GaN-based npn heterojunction bipolar transistors with a quaternary AlGaInN emitter and a two-dimensionally conductive base Reviewed International journal
Akira Mase, Yutaka Nikai, Yusuke Iida, Takashi Egawa, Makoto Miyoshi
Physica Status Solidi A: Applications and Materials Science 219 ( 4 ) 2100397-1 - 2100397-5 2022.02
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
Other Link： https://onlinelibrary.wiley.com/doi/10.1002/pssa.202100397
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High drain-current-density and high breakdown-field Al0.36Ga0.64N-channel heterojunction filed-effect transistors with a dual AlN/AlGaInN barrier layer Reviewed International journal
Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
Japanese Journal of Applied Physics 61 ( SC ) SC1039-1 - SC1039-6 2022.02
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.35848/1347-4065/ac4b09
Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ac4b09
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Near-bandgap optical properties of Al1-xInxN thin films grown on a c-plane freestanding GaN substrate Reviewed International journal
Hayata Toyoda, Yuto Murakami, Rino Miyata, Daichi Imai, Makoto Miyoshi, Tetsuya Takeuchi, Takao Miyajima
Japanese Journal of Applied Physics 61 ( SA ) SA1017-1 - SA1017-5 2022.01
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.35848/1347-4065/ac148a
Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ac148a
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Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films Reviewed International journal
Toshiharu Kubo, Akira Takahashi, Makoto Miyoshi, Takashi Egawa
Applied Physics Express 14 ( 11 ) 116503-1 - 116503-3 2021.10
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.35848/1882-0786/ac30ed
Other Link： https://iopscience.iop.org/article/10.35848/1882-0786/ac30ed
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Evaluation of GaInN-based photovoltaic cells under monochromatic light illumination toward the application to the optical wireless power transmission system Reviewed International journal
Taiki Nakabayashi, Kousuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials - SSDM 2021 333 - 334 2021.09
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Japan Society of Applied Physics
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High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer and selective-area regrowth ohmic contacts Reviewed International journal
Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
Extended Abstracts of the 2021 International Conference on Solid State Devices and Materials - SSDM 2021 269 - 270 2021.09
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Japan Society of Applied Physics
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Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations Reviewed International journal
Makoto Miyoshi, Taiki Nakabayashi, Kosuke Yamamoto, Pradip Dalapati, Takashi Egawa
AIP Advances 11 ( 9 ) 095208-1 - 095208-8 2021.09
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0062346
Other Link： https://doi.org/10.1063/5.0062346
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Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy Reviewed International journal
Liyang Li, Kohei Shima, Mizuki Yamanaka, Kazunobu Kojima, Takashi Egawa, Akira Uedono, Shoji Ishibashi, Tetsuya Takeuchi, Makoto Miyoshi, Shigefusa F. Chichibu
Applied Physics Letters 119 ( 9 ) 091105-1 - 091105-6 2021.08
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0066263
Other Link： https://aip.scitation.org/doi/10.1063/5.0066263
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Evaluation of high-performance, self-powered and wavelength-selective InGaN/GaN multiple quantum well UV photodetectors fabricated on sapphire substrate: Analysis of the influence of growth temperature Reviewed International journal
Pradip Dalapati, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Sensors and Actuators A: Physical 331 113050-1 - 113050-11 2021.08
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.sna.2021.113050
Other Link： https://www.sciencedirect.com/science/article/abs/pii/S092442472100515X
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Understanding the degradation mechanisms of InGaN/GaN multiple quantum well UV photodetectors submitted to different current stresses Reviewed International journal
Pradip Dalapati, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Optics Letters 46 ( 15 ) 3568 - 3571 2021.08
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：OSA
DOI： 10.1364/OL.434920
Other Link： https://www.osapublishing.org/ol/abstract.cfm?doi=10.1364/OL.434920
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Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer Reviewed International journal
Pradip Dalapati, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Optik 245 167691-1 - 167691-2 2021.07
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.ijleo.2021.167691
Other Link： https://www.sciencedirect.com/science/article/abs/pii/S0030402621012894
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Improved on-state performance in AlGaN-channel heterojunction field-effect transistors with a quaternary AlGaInN barrier layer and a selectively grown n++-GaN contact layer Reviewed International journal
Makoto Miyoshi, Akiyoshi Inoue, Mizuki Yamanaka, Hiroki Harada, Takashi Egawa
Materials Science in Semiconductor Processing 133 105960-1 - 105960-5 2021.05
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.mssp.2021.105960
Other Link： https://www.sciencedirect.com/science/article/abs/pii/S1369800121003073?dgcid=author
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Demonstration of polarization-induced hole conduction in composition-graded AlInN layers grown by metalorganic chemical vapor deposition Reviewed International journal
Makoto Miyoshi, Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Tetsuya Takeuchi
Applied Physics Letters 118 ( 16 ) 162102-1 - 162102-5 2021.04
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0048751
Other Link： https://aip.scitation.org/doi/10.1063/5.0048751
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Growth of 300-nm-thick epitaxial AlInN films on a semi-relaxed c-plane GaInN template by metalorganic chemical vapor deposition Reviewed International journal
Makoto Miyoshi, Mizuki Yamanaka, Takashi Egawa, Narihito Okada, Kazuyuki Tadatomo, Tetsuya Takeuchi
Materials Research Express 8 ( 2 ) 025906-1 - 025906-6 2021.02
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
Other Link： https://iopscience.iop.org/article/10.1088/2053-1591/abe250
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Impact of current-induced degradation process on the electro-optical characteristics of InGaN/GaN multiple-quantum-well photodetectors fabricated on sapphire substrate Reviewed International journal
Pradip Dalapati, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Applied Physics Letters 118 ( 2 ) 021101-1 - 021101-5 2021.01
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0027127
Other Link： https://aip.scitation.org/doi/10.1063/5.0027127
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Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy Reviewed International journal
Yongzhao Yao, Yoshihiro Sugawara, Daisaku Yokoe, Koji Sato, Yukari Ishikawa, Narihito Okada, Kazuyuki Tadatomo, Masaki Sudo, Masashi Kato, Makoto Miyoshi, Takashi Egawa
CrystEngComm 22 ( 48 ) 8299 - 8312 2020.12
Language：English Publishing type：Research paper (scientific journal) Publisher：The Royal Society of Chemistry
DOI： 10.1039/D0CE01344G
Other Link： https://pubs.rsc.org/en/content/articlehtml/2020/ce/d0ce01344g?page=search
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Analysis of the optical constants and bandgap energy in Al1-xInxN alloys grown on a c-plane freestanding GaN substrate by using spectroscopic ellipsometry Reviewed International journal
Daichi Imai, Yuto Murakami, Rino Miyata, Hayata Toyoda, Tomoaki Yamaji, Makoto Miyoshi, Tetsuya Takeuchi, Takao Miyajima
Japanese Journal of Applied Physics 59 ( 12 ) 121001-1 - 121001-7 2020.11
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.35848/1347-4065/abc29f
Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/abc29f/meta
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Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition Reviewed International journal
Makoto Miyoshi, Taiki Nakabayashi, Mizuki Yamanaka, Takashi Egawa, Tetsuya Takeuchi
Journal of Vacuum Science & Technology B 38 ( 5 ) 052205-1 - 052205-5 2020.09
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/6.0000284
Other Link： https://avs.scitation.org/doi/10.1116/6.0000284
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Current-induced degradation process in (In)AlGaN-based deep-UV light-emitting diode fabricated on AlN/sapphire template Reviewed International journal
Pradip Dalapati, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Optical Materials 109 110352-1 - 110352-6 2020.09
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.optmat.2020.110352
Other Link： https://www.sciencedirect.com/science/article/abs/pii/S0925346720306935?via%3Dihub
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Metalorganic chemical vapor deposition of over 150-nm-thick quaternary AlGaInN epitaxial films near alloy composition lattice-matching to GaN on sapphire and their structural and optical characterization Reviewed International journal
Makoto Miyoshi, Hiroki Harada, Takashi Egawa, Tetsuya Takeuchi
Physica Status Solidi A: Applications and Materials Science 217 ( 3 ) 1900597-1 - 1900597-6 2019.10
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
Other Link： https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.201900597
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High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator Reviewed International journal
Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi
Journal of Vacuum Science & Technology B 37 ( 4 ) 041205-1 - 041205-4 2019.07
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/1.5097338
Other Link： https://avs.scitation.org/doi/full/10.1116/1.5097338
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450 nm GaInN ridge stripe laser diodes with AlInN/AlGaN multiple cladding layers Reviewed International journal
Kei Arakawa, Kohei Miyoshi, Ryosuke Iida, Yuki Kato, Tetsuya Takeuchi, Makoto Miyoshi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki
Japanese Journal of Applied Physics 58 ( SC ) SCCC28-1 - SCCC28-6 2019.05
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： https://iopscience.iop.org/article/10.7567/1347-4065/ab12ca
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Growth and characterization of quaternary AlGaInN epitaxial films with alloy compositions around lattice-matched to GaN Reviewed International journal
Hiroki Harada, Makoto Miyoshi, Takashi Egawa, Tetsuya Takeuchi
2019 Compound Semiconductor Week, CSW 2019 - Proceedings 2019.05
Authorship：Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE
DOI： 10.1109/ICIPRM.2019.8819345
Other Link： https://ieeexplore.ieee.org/abstract/document/8819345
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MOCVD growth and characterization of Si-doped thick-AlInN epitaxial films Reviewed International journal
Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa, Tetsuya Takeuchi
2019 Compound Semiconductor Week, CSW 2019 - Proceedings 2019.05
Authorship：Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE
DOI： 10.1109/ICIPRM.2019.8819059
Other Link： https://ieeexplore.ieee.org/document/8819059
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Device characteristics and MIS interface evaluation of Al2O3/AlGaInN/AlGaN MIS HFET Reviewed International journal
Saki Saito, Daiki Hosomi, Keita Furuoka, Heng Chen, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi
2019 Compound Semiconductor Week, CSW 2019 - Proceedings 2019.05
Authorship：Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE
DOI： 10.1109/ICIPRM.2019.8819229
Other Link： https://ieeexplore.ieee.org/document/8819229/authors#authors
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A 300 nm thick epitaxial AlInN film with a highly flat surface grown almost perfectly lattice-matched to c-plane free-standing GaN substrate Reviewed International journal
Makoto Miyoshi, Mizuki Yamanaka, Takashi Egawa, Tetsuya Takeuchi
Japanese Journal of Applied Physics 58 ( SC ) SC1006-1 - SC1006-4 2019.04
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： https://iopscience.iop.org/article/10.7567/1347-4065/ab040c
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Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition Reviewed International journal
Makoto Miyoshi, Mizuki Yamanaka, Takashi Egawa, Tetsuya Takeuchi
Journal of Crystal Growth 506 40 - 44 2019.01
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.jcrysgro.2018.09.049
Other Link： https://www.sciencedirect.com/science/article/pii/S002202481830486X?via%3Dihub
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Ultrathin inserted AlGaN/InAlN heterojunction for performance improvement in AlGaN-based deep ultraviolet light-emitting diodes Reviewed International journal
Lei Li, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa
Applied Physics Express 12 ( 1 ) 011010-1 - 011010-4 2019.01
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.7567/1882-0786/aaf62b
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Design and material growth of AlGaN-channel two-dimensional-electron gas heterostructures employing strain-controlled quaternary AlGaInN barrier layers Reviewed International journal
Daiki Hosomi, Heng Chen, Takashi Egawa, Makoto Miyoshi
Japanese Journal of Applied Physics 58 ( 1 ) 011004-1 - 011004-5 2018.11
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.7567/1347-4065/aaed2f
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Epitaxial growth and characterization of approximatey 300-nm-thick AlInN films nearly lattice-matched to GaN grown on sapphire Reviewed International journal
Makoto Miyoshi, Mizuki Yamanaka, Takashi Egawa, Tetsuya Takeuchi
Applied Physics Express 11 ( 5 ) 051001-1 - 051001-4 2018.04
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.7567/APEX.11.051001
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Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically smooth heterointerface Reviewed International journal
Daiki Hosomi, Yuta Miyachi, Takashi Egawa, Makoto Miyoshi
Japanese Journal of Applied Physics 57 ( 4S ) 04FG12-1 - 04FG12-4 2018.03
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.7567/JJAP.57.04FG12
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Distinct light emission from two-dimensional electron gas at a lattice-matched InAlN/AlGaN heterointerface Reviewed International journal
Lei Li, Daiki Hosomi, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa
Applied Physics Letters 112 ( 10 ) 102102-1 - 102102-4 2018.03
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.5023847
Other Link： https://aip.scitation.org/doi/10.1063/1.5023847
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A comparative study of InGaN/GaN multiple-quantum-well solar cells grown on sapphire and AlN template by metalorganic chemical vapor deposition Reviewed International journal
Makoto Miyoshi, Miki Ohta, Takuma Mori, Takashi Egawa
Physica Status Solidi A: Applications and Materials Science 215 ( 10 ) 1700323-1 - 1700323-7 2017.12
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
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A comparative study of AlGaN-based PiN type UV photodiodes with and without surface recessed structures Reviewed
Mayuko Okada, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa
Transactions of the Materials Research Society of Japan 42 ( 6 ) 151 - 153 2017.12
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal)
Other Link： https://www.jstage.jst.go.jp/article/tmrsj/42/6/42_151/_article
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Improved mobility in InAlN/AlGaN two-dimensional electron gas heterostructures with an atomically-smooth heterointerface Reviewed International journal
Daiki Hosomi, Yuta Miyachi, Takashi Egawa, Makoto Miyoshi
Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials - SSDM 2017 635 - 636 2017.09
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Japan Society of Applied Physics
Other Link： https://confit.atlas.jp/guide/event/ssdm2017/subject/N-2-03/advanced
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High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films Reviewed International journal
Lei Li, Daiki Hosomi, Yuta Miyachi, Takeaki Hamada, Makoto Miyoshi, Takashi Egawa
Applied Physics Letters 111 ( 10 ) 102106-1 - 102106-4 2017.09
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.4986311
Other Link： http://aip.scitation.org/doi/full/10.1063/1.4986311
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Growth of rough-surface p-GaN layers on InGaN/GaN multiple-quantum-well structures by metalorganic chemical vapor deposition and their application to GaN-based solar cells Reviewed International journal
Takuma Mori, Takashi Egawa, Makoto Miyoshi
Materials Research Express 4 ( 8 ) 085904-1 - 085904-8 2017.08
Authorship：Last author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
Other Link： http://iopscience.iop.org/article/10.1088/2053-1591/aa8147
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Post-deposition annealing effects on the insulator/semiconductor interfaces of Al2O3/AlGaN/GaN structures on Si substrates Reviewed International journal
Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa
Semiconductor Science and Technology 32 ( 6 ) 065012-1 - 065012-5 2017.05
Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
Other Link： http://iopscience.iop.org/article/10.1088/1361-6641/aa6c09/meta
-
Al2O3/AlGaN channel normally-off MOSFET on Si with high breakdown voltage Reviewed International journal
Joseph J. Freedsman, Takeaki Hamada, Makato Miyoshi, Takashi Egawa
Electron Device Letters 38 ( 4 ) 497 - 500 2017.02
Language：English Publishing type：Research paper (scientific journal) Publisher：IEEE
Other Link： http://ieeexplore.ieee.org/document/7839208/
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Self-forming graphene/Ni patterns on sapphire utilizing the pattern-controlled catalyst metal agglomeration technique Reviewed International journal
Makoto Miyoshi, Yukinori Arima, Toshiharu Kubo, Takashi Egawa
Applied Physics Letters 110 ( 1 ) 013103-1 - 013103-4 2017.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.4973523
Other Link： http://aip.scitation.org/doi/full/10.1063/1.4973523
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Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cells Reviewed International journal
Makoto Miyoshi, Tatsuya Tsutsumi, Tomoki Kabata, Takuma Mori, Takashi Egawa
Solid-State Electronics 129 ( 1 ) 29 - 34 2016.12
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.sse.2016.12.009
Other Link： http://www.sciencedirect.com/science/article/pii/S0038110116303598
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Observation of reaction between a-type dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice after dislocation propagation Reviewed International journal
Yoshihiro Sugawara, Yukari Ishikawa, Arata Watanabe, Makoto Miyoshi, Takashi Egawa
Journal of Crystal Growth 468 ( 15 ) 536 - 540 2016.11
Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.jcrysgro.2016.11.010
Other Link： http://www.sciencedirect.com/science/article/pii/S0022024816306923
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Modeling of the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer buffer structures Reviewed International journal
Makoto Miyoshi, Arata Watanabe, Takashi Egawa
Semiconductor Science and Technology 31 ( 10 ) 105016-1 - 105016-7 2016.09
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
DOI： 10.1088/0268-1242/31/10/105016
Other Link： http://iopscience.iop.org/article/10.1088/0268-1242/31/10/105016/meta
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Enhanced emission efficiency of deep ultraviolet light-emitting AlGaN multiple quantum wells grown on an n-AlGaN underlying layer Reviewed International journal
Lei Li, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa
Photonics Journal 8 ( 5 ) 1601710-1 - 1601710-10 2016.08
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IEEE
DOI： 10.1109/JPHOT.2016.2601439
Other Link： http://ieeexplore.ieee.org/document/7556364/
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Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors Reviewed International journal
Makoto Miyoshi, Tatsuya Tsutsumi, Gosuke Nishino, Yuta Miyachi, Mayuko Okada, Joseph J. Freedsman, Takashi Egawa
Journal of Vacuum Science & Technology B 34 ( 5 ) 050602-1 - 050602-4 2016.08
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/1.4961908
Other Link： http://scitation.aip.org/content/avs/journal/jvstb/34/5/10.1116/1.4961908
-
Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures Reviewed
Reina Miyagawa, Yu Okabe, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa, Osamu Eryu
Transactions of the Materials Research Society of Japan 41 ( 2 ) 155 - 157 2016.06
Language：English Publishing type：Research paper (scientific journal)
Other Link： https://www.jstage.jst.go.jp/article/tmrsj/41/2/41_155/_article
-
Improved performance of InGaN/GaN multilayer solar cells with an atomic-layer-deposited Al2O3 passivation film Reviewed International journal
M. Miyoshi, T. Kabata, T. Tsutsumi, T. Mori, M. Kato, T. Egawa
Electronics Letters 52 ( 14 ) 1246 - 1248 2016.05
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Institution of Engineering and Technology
DOI： 10.1049/el.2016.1574
Other Link： http://digital-library.theiet.org/content/journals/10.1049/el.2016.1574
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Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy Reviewed International journal
Yoshihiro Sugawara, Yukari Ishikawa, Arata Watanabe, Makoto Miyoshi, Takashi Egawa
AIP Advances 6 ( 4 ) 045020-1 - 045020-7 2016.04
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.4948451
Other Link： https://aip.scitation.org/doi/10.1063/1.4948451
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Characterization of dislocations in GaN layer grown on 4-inch Si(111) with AlGaN/AlN strained layer superlattices Reviewed International journal
Yoshihiro Sugawara, Yukari Ishikawa, Arata Watanabe, Makoto Miyoshi, Takashi Egawa
Japanese Journal of Applied Physics 55 ( 5S ) 05FB08-1 - 05FB08-6 2016.04
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.7567/JJAP.55.05FB08/meta;jsessionid=6FD4DC5F76751A85D6490BFD7F13CADE.c2
-
Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with n-AlGaN underlayers Reviewed International journal
L. Li, T. Tsutsumi, Y. Miyachi, M. Miyoshi, T. Egawa
Semiconductor Science and Technology 30 ( 12 ) 125012-1 - 125012-5 2015.11
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
DOI： 10.1088/0268-1242/30/12/125012
Other Link： http://iopscience.iop.org/article/10.1088/0268-1242/30/12/125012/meta
-
DC characteristics in nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors Reviewed International journal
Tatsuya Tsutsumi, Gosuke Nishino, Joseph. J. Freedsman, Makoto Miyoshi, Takashi Egawa
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials - SSDM 2015 188 - 189 2015.09
Authorship：Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Japan Society of Applied Physics
DOI： 10.7567/SSDM.2015.PS-6-11
Other Link： https://confit.atlas.jp/guide/organizer/ssdm/ssdm2015/subject/PS-6-11/detail
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Analysis of post-deposition annealing effects on insulator/semiconductor interface of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates Reviewed International journal
Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials - SSDM 2015 192 - 193 2015.09
Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Japan Society of Applied Physics
DOI： 10.7567/SSDM.2015.PS-6-13
Other Link： https://confit.atlas.jp/guide/organizer/ssdm/ssdm2015/subject/PS-6-13/detail
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Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors Reviewed International journal
Makoto Miyoshi, Masaya Mizuno, Yukinori Arima, Toshiharu Kubo, Takashi Egawa, Tetsuo Soga
Applied Physics Letters 107 ( 7 ) 073102-1 - 073102-4 2015.08
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.4928759
Other Link： http://scitation.aip.org/content/aip/journal/apl/107/7/10.1063/1.4928759
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Numerical and experimental analyses of two-dimensional electron mobility in Al(In,Ga)N/AlGaN heterostructures Reviewed International journal
Makoto Miyoshi, Shu Fujita, Takashi Egawa
Applied Physics Express 8 ( 5 ) 051003-1 - 051003-4 2015.04
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/1882-0786/8/5/051003/
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Nearly lattice-matched InAlN/AlGaN two-dimensional electron gas heterostructures grown by metalorganic chemical vapor deposition Reviewed International journal
Makoto Miyoshi, Shu Fujita, Takashi Egawa
Applied Physics Express 8 ( 2 ) 021001-1 - 021001-4 2015.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/1882-0786/8/2/021001/article
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Demonstration of NOx gas sensing for Pd/ZnO/GaN heterojunction diodes Reviewed International journal
M. Miyoshi, S. Fujita, T. Egawa
Journal of Vacuum Science & Technology B 33 ( 1 ) 013001-1 - 013001-4 2015.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/1.4906032
Other Link： http://scitation.aip.org/content/avs/journal/jvstb/33/1/10.1116/1.4906032
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Study on transfer-free graphene synthesis process utilizing spontaneous agglomeration of catalytic Ni and Co metals Reviewed International journal
M. Miyoshi, M. Mizuno, K. Banno, T. Kubo, T. Egawa, T. Soga
Materials Research Express 2 ( 1 ) 015602-1 - 015602-8 2015.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
DOI： 10.1088/2053-1591/2/1/015602
Other Link： http://iopscience.iop.org/2053-1591/2/1/015602/
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Experimental and simulation study on ultraviolet light emission from quaternary InAlGaN quantum wells with localized carriers Reviewed International journal
Makoto Miyoshi, Masataka Kato, Takashi Egawa
Semiconductor Science and Technology 29 ( 7 ) 075024-1 - 075024-6 2014.06
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
DOI： 10.1088/0268-1242/29/7/075024
Other Link： http://iopscience.iop.org/0268-1242/29/7/075024/
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Transfer-free graphene synthesis on insulating substrates via agglomeration phenomena of catalytic nickel films Reviewed International journal
K. Banno, M. Mizuno, K. Fujita, T. Kubo, M. Miyoshi, T. Egawa, T. Soga
Applied Physics Letters 103 ( 8 ) 082112-1 - 082112-4 2013.08
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.4818342
Other Link： http://scitation.aip.org/content/aip/journal/apl/103/8/10.1063/1.4818342
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Demonstration of AlGaN-based deep-ultraviolet light-emitting diodes on high-quality AlN templates Reviewed International journal
Y. Sakai, Y. Zhu, S. Sumiya, M. Miyoshi, M. Tanaka, T. Egawa
Japanese Journal of Applied Physics 49 ( 2 ) 022102-1 - 022102-4 2010.02
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.1143/JJAP.49.022102/meta
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Device characteristics of metalorganic chemical vapor deposition-grown InAlN/GaN high-electron –mobility transistors on AlN/sapphire template Reviewed International journal
J. Selvaraj, S. L. Selvaraj, M. Miyoshi, Y. Kuraoka, M. Tanaka, T. Egawa
Japanese Journal of Applied Physics 48 ( 4 ) 04C102-1 - 04C102-4 2009.04
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.1143/JJAP.48.04C102/meta
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Suppression of the subband parasitic peak by 1 nm i-AlN interlayer in AlGaN deep ultraviolet light-emitting diodes Reviewed International journal
J. C. Zhang, Y. H. Zhu, T. Egawa, S. Sumiya, M. Miyoshi, M. Tanaka
Applied Physics Letters 93 ( 13 ) 131117 - 131119 2008.10
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.2996580
Other Link： http://scitation.aip.org/content/aip/journal/apl/93/13/10.1063/1.2996580
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Device characteristics of MOCVD-grown InAlN/GaN HEMTs on AlN/sapphire template Reviewed International journal
Josephine Selvaraj, Lawrence Selvaraj, Makoto Miyoshi, Yoshitaka Kuraoka, Mitsuhiro Tanaka, Takashi Egawa
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials - SSDM 2008 152 - 153 2008.09
Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Japan Society of Applied Physics
Other Link： https://confit.atlas.jp/guide/organizer/ssdm/ssdm2008/subject/G-1-4/detail
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Metalorganic chemical vapor deposition and material characterization of lattice-matched InAlN/GaN two-dimensional electron gas heterostructures Reviewed International journal
M. Miyoshi, Y. Kuraoka, M. Tanaka, T. Egawa
Applied Physics Express 1 ( 8 ) 081102-1 - 081102-3 2008.06
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.1143/APEX.1.081102/meta
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Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes Reviewed International journal
J. C. Zhang, Y. H. Zhu, T. Egawa, S. Sumiya, M. Miyoshi, M. Tanaka
Applied Physics Letters 92 ( 19 ) 191917-1 - 191917-3 2008.05
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.2931698
Other Link： http://scitation.aip.org/content/aip/journal/apl/92/19/10.1063/1.2931698
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Improved performance of 264 nm emission AIGaN-based deep ultraviolet light-emitting diodes Reviewed International journal
Y. H. Zhu, S. Sumiya, J. C. Zhang, M. Miyoshi, T. Shibata, K. Kosaka, M. Tanaka, T. Egawa
Electronics Letters 44 ( 7 ) 493 - 495 2008.03
Language：English Publishing type：Research paper (scientific journal) Publisher：The Institution of Engineering and Technology
DOI： 10.1049/el:20082753
Other Link： http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=4479563&abstractAccess=no&userType=inst
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AlGaN-based deep ultraviolet light-emitting diodes grown on epitaxial AlN/sapphire templates Reviewed International journal
S. Sumiya, Y. Zhu, J. Zhang, K. Kosaka, M. Miyoshi, T. Shibata, M. Tanaka, T. Egawa
Japanese Journal of Applied Physics 47 ( 1 ) 43 - 46 2008.01
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.1143/JJAP.47.43
Other Link： http://iopscience.iop.org/article/10.1143/JJAP.47.43/meta
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Quantum-well and localized state emissions in AlInGaN deep ultraviolet light-emitting diodes Reviewed International journal
J. C. Zhang, Y. H. Zhu, T. Egawa, S. Sumiya, M. Miyoshi, M. Tanaka
Applied Physics Letters 91 ( 22 ) 221906-1 - 221906-3 2007.11
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.2817947
Other Link： http://scitation.aip.org/content/aip/journal/apl/91/22/10.1063/1.2817947
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Improved reverse blocking characteristics in AlGaN/GaN Schottky barrier diodes based on AlN template Reviewed International journal
M. Miyoshi, Y. Kuraoka, K. Asai, T. Shibata, M. Tanaka, T. Egawa
Electronics Letters 43 ( 17 ) 953 - 954 2007.08
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Institution of Engineering and Technology
DOI： 10.1049/el:20071141
Other Link： http://digital-library.theiet.org/content/journals/10.1049/el_20071141
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Electrical characterization of Pt/AlGaN/GaN Schottky diodes grown using AlN template and their application to hydrogen gas sensors Reviewed International journal
M. Miyoshi, Y. Kuraoka, K. Asai, T. Shibata, M. Tanaka, T. Egawa
Journal of Vacuum Science & Technology B 25 ( 4 ) 1231 - 1235 2007.06
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/1.2749530
Other Link： http://scitation.aip.org/content/avs/journal/jvstb/25/4/10.1116/1.2749530
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Study on mobility enhancement in MOVPE-grown AlGaN/AlN/GaN HEMT structures using a thin AlN Interfacial layer Reviewed International journal
M. Miyoshi, T. Egawa, H. Ishikawa
Solid-State Electronics 50 ( 9-10 ) 1515 - 1521 2006.09
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.sse.2006.07.016
Other Link： http://www.sciencedirect.com/science/article/pii/S0038110106002759
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High speed turn-on reverse conducting 4 kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators Reviewed International journal
N. Shimizu, M. Miyoshi, S. Tange, T. Sekiya, T. Ito, T. Sakuma, T. Sakurai, T. Terasawa, M. Hatano, S. Hotta, Y. Imanishi, A. Okimoto, M. Asai, O. Oda, J. Nishizawa
Solid-State Electronics 50 ( 9-10 ) 1567 - 1578 2006.08
Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.sse.2006.08.014
Other Link： http://www.sciencedirect.com/science/article/pii/S0038110106002917?np=y
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Study on MOVPE growth of III-nitrides heteroepitaxial films and their application to electronic devices Reviewed
Makoto Miyoshi
2006.03
Authorship：Lead author, Last author, Corresponding author Language：English Publishing type：Doctoral thesis
-
Nanostructural characterization and two-dimensional-electron gas properties in high-mobility AlGaN/AlN/GaN heterostructures grown on epitaxial AlN/sapphire templates Reviewed International journal
M. Miyoshi, T. Egawa, H. Ishikawa, K. Asai, T. Shibata, M. Tanaka, O. Oda
Journal of Applied Physics 98 ( 6 ) 063713-1 - 063713-5 2005.09
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.2060946
Other Link： http://scitation.aip.org/content/aip/journal/jap/98/6/10.1063/1.2060946
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DC characteristics in high-quality AlGaN/AlN/GaN high-electron-mobility transistors grown on AlN/sapphire templates Reviewed International journal
M. Miyoshi, A. Imanishi, T. Egawa, H. Ishikawa, K. Asai, T. Shibata, M. Tanaka, O. Oda
Japanese Journal of Applied Physics Part 1 44 ( 9A ) 6490 - 6494 2005.09
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.1143/JJAP.44.6490
Other Link： http://iopscience.iop.org/article/10.1143/JJAP.44.6490/meta
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Structural characterization of strained AlGaN layers in different Al content AlGaN/GaN heterostructures and its effect on two-dimensional electron transport properties Reviewed International journal
M. Miyoshi, T. Egawa, H. Ishikawa
Journal of Vacuum Science & Technology B 23 ( 4 ) 1527 - 1531 2005.07
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/1.1993619
Other Link： http://scitation.aip.org/content/avs/journal/jvstb/23/4/10.1116/1.1993619
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Investigation of boron diffusion into silicon using a liquid boron tribromide source and its application to buried-gate-type static-induction thyristors Reviewed International journal
M. Miyoshi, N. Shimizu, Y. Imanishi, O. Oda, J. Nishizawa
Journal of The Electrochemical Society 152 ( 8 ) G601 - G607 2005.02
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Electrochemical Society
DOI： 10.1149/1.1938007
Other Link： http://jes.ecsdl.org/content/152/8/G601.short
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Growth and characterization of AlGaN/AlN/GaN HEMTs on 100-mm-diameter epitaxial AlN/sapphire templates Reviewed International journal
M. Miyoshi, A. Imanishi, H. Ishikawa, T. Egawa, K. Asai, T. Shibata, M. Tanaka, O. Oda
Technical Digest of 2004 IEEE International Electron Devices Meeting - IEDM 2004 1031 - 1034 2004.12
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE
DOI： 10.1109/IEDM.2004.1419366
Other Link： http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1419366
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MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates Reviewed International journal
M. Miyoshi, M. Sakai, H. Ishikawa, T. Egawa, T. Jimbo, M. Tanaka, O. Oda
Journal of Crystal Growth 272 ( 1-4 ) 293 - 299 2004.12
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.jcrysgro.2004.08.117
Other Link： http://www.sciencedirect.com/science/article/pii/S0022024804010875
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Characterization of different-Al-content AlGaN/GaN heterostructures and high-electron-mobility transistors grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy Reviewed International journal
M. Miyoshi, M. Sakai, S. Arulkumaran, H. Ishikawa, T. Egawa, M. Tanaka, O. Oda
Japanese Journal of Applied Physics 43 ( 12R ) 7939 - 7943 2004.12
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.1143/JJAP.43.7939
Other Link： http://iopscience.iop.org/article/10.1143/JJAP.43.7939/meta
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High performance AlGaN/AlN/GaN HEMTs grown on 100-mm-diameter epitaxial AlN/sapphire templates by MOVPE Reviewed International journal
M. Miyoshi, A. Imanish, H. Ishikawa, T.Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda
Extended Abstracts of 2004 IEEE Compound Semiconductor Integrated Circuit Symposium - CSICS 2004 193 - 196 2004.10
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE
DOI： 10.1109/CSICS.2004.1392534
Other Link： http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1392534&tag=1
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High-electron-mobility AlGaN/AlN/GaN heterostructures grown on 100-mm-diam epitaxial AlN/sapphire templates by metalorganic vapor phase epitaxy Reviewed International journal
M. Miyoshi, H. Ishikawa, T. Egawa, K. Asai, M. Mouri, T. Shibata, M. Tanaka, O. Oda
Applied Physics Letters 85 ( 10 ) 1710 - 1712 2004.07
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.1790073
Other Link： http://scitation.aip.org/content/aip/journal/apl/85/10/10.1063/1.1790073
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Growth of 100-mm-diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE Reviewed International journal
M. Miyoshi, H. Ishikawa, T. Egawa, T. Jimbo
Physica Status Solidi C: Current Topics in Solid State Physics 0 ( 7 ) 2091 - 2094 2003.11
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
Other Link： http://onlinelibrary.wiley.com/doi/10.1002/pssc.200303445/abstract
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Growth of 100 mm diameter AlGaN/GaN heterostructures on sapphire substrates by MOVPE Reviewed International journal
M. Miyoshi, M. Sakai, H. Ishikawa, T. Egawa, T. Jimbo, M. Tanaka, O. Oda
IEICE TRANSACTIONS on Electronics E86-C ( 10 ) 2077 - 2081 2003.10
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IEICE
Other Link： https://search.ieice.org/bin/summary.php?id=e86-c_10_2077
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Uniformity studies of MOCVD grown AlGaN/GaN HEMTs on 100-mm diameter sapphire Reviewed International journal
S. Arulkumaran, M. Miyoshi, T. Egawa, H. Ishikawa, T. Jimbo
Extended Abstracts of the 2003 International Conference on Solid State Devices and Materials - SSDM 2003 2003.09
Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Japan Society of Applied Physics
DOI： https://doi.org/10.7567/SSDM.2003.F-3-4L
Other Link： https://confit.atlas.jp/guide/organizer/ssdm/ssdm2003/subject/F-3-4L/detail
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Electrical characteristics of AlGaN/GaN HEMTs on 4-inch diameter sapphire substrate Reviewed International journal
S. Arulkumaran, M. Miyoshi, H. Ishikawa, T. Egawa, T. Jimbo
Electron Device Letters 24 ( 8 ) 497 - 499 2003.08
Language：English Publishing type：Research paper (scientific journal) Publisher：IEEE
Other Link： http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1218653&abstractAccess=no&userType=inst
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Synchrotron x-ray diffraction study of the crystallisation kinetics of silica glass at high pressure and high temperature Reviewed International journal
Kaichi Suito, Makoto Miyoshi, Akifuma Onodera, Osamu Shimomura, Takumi Kikegawa
High Temperatures - High Pressures 34 ( 2 ) 243 - 250 2002.10
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1068/htjr017
Other Link： http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.430.1411
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Studies of crystallization process of silica and germania Reviewed International journal
K. Suito, M. Miyoshi, A. Onodera
High Pressure Research 16 ( 4 ) 217 - 232 1999.08
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1080/08957959908200295
Other Link： https://www.tandfonline.com/doi/abs/10.1080/08957959908200295
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Brazing of Si-Ge thermoelectric element and Mo electrode Reviewed
keiko Ikoma, Masakazu Kobayashi, Kazuhiko Shinohara, Makoto Miyoshi, Yuichiro Imanishi
Journal of Advanced Science 9 ( 3-4 ) 188 - 191 1998.01
Language：Japanese Publishing type：Research paper (scientific journal)
DOI： 10.2978/jsas.9.188
Other Link： https://www.jstage.jst.go.jp/article/jsas1989/9/3-4/9_3-4_188/_article/-char/ja/
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Synchrotron x-ray-diffraction study of α-cristobalite at high pressure and high temperature Reviewed International journal
A. Onodera, K. Suito, J. Namba Y. Taniguchi, T. Horikawa, M. Miyoshi, O. Shimomura, T. Kikegawa
High Pressure Research 15 ( 5 ) 307 - 319 1996.10
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1080/08957959708240478
Other Link： https://www.tandfonline.com/doi/abs/10.1080/08957959708240478
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Thermoelectric generation and related properties of conventional type module based on Si-Ge alloy Reviewed International journal
M. Kobayashi, K. Ikoma, K. Furuya, K. Shinohara, Y. Imanishi, M. Miyoshi, T. Watanabe
15th International Conference on Thermoelectrics - Proceedings ICT '96 373 - 377 1996.03
Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE
Other Link： https://ieeexplore.ieee.org/abstract/document/553507
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Thermal expansion studies of stishovite at 10.5 GPa using synchrotron radiation Reviewed International journal
K. Suito, M. Miyoshi, A. Onodera, O. Shimomura, T. Kikegawa
Physics of the Earth and Planetary Interiors 93 ( 3-4 ) 215 - 222 1996.02
Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/0031-9201(95)03074-3
Other Link： https://www.sciencedirect.com/science/article/pii/0031920195030743
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Measurement of ultrasonic wave velocities in silica glass at high temperature and high pressure Reviewed International journal
Kaichi Suito, Makoto Miyoshi
AIP Conference Proceedings 309 ( 1 ) 101 - 104 1994.01
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.46282
Other Link： https://aip.scitation.org/doi/abs/10.1063/1.46282
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Elastic properties of obsidian, vitreous SiO2, and vitreous GeO2 under high pressure up to 6 GPa Reviewed International journal
K. Suito, M. Miyoshi, T. Sasakura, H. Fujisawa
High Pressure Research: Application to Earth and Planetary Sciences 67 219 - 225 1992.01
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1029/GM067p0219
Other Link： https://agupubs.onlinelibrary.wiley.com/doi/abs/10.1029/GM067p0219
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