Papers - MIYOSHI Makoto
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Enhanced emission efficiency of deep ultraviolet light-emitting AlGaN multiple quantum wells grown on an n-AlGaN underlying layer Reviewed International journal
Lei Li, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa
Photonics Journal 8 ( 5 ) 1601710-1 - 1601710-10 2016.08
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IEEE
DOI： 10.1109/JPHOT.2016.2601439
Other Link： http://ieeexplore.ieee.org/document/7556364/
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Device characteristics and performance estimation of nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors Reviewed International journal
Makoto Miyoshi, Tatsuya Tsutsumi, Gosuke Nishino, Yuta Miyachi, Mayuko Okada, Joseph J. Freedsman, Takashi Egawa
Journal of Vacuum Science & Technology B 34 ( 5 ) 050602-1 - 050602-4 2016.08
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/1.4961908
Other Link： http://scitation.aip.org/content/avs/journal/jvstb/34/5/10.1116/1.4961908
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Selective growth of GaN on SiC substrates with femtosecond-laser-induced periodic nanostructures Reviewed
Reina Miyagawa, Yu Okabe, Yuta Miyachi, Makoto Miyoshi, Takashi Egawa, Osamu Eryu
Transactions of the Materials Research Society of Japan 41 ( 2 ) 155 - 157 2016.06
Language：English Publishing type：Research paper (scientific journal)
Other Link： https://www.jstage.jst.go.jp/article/tmrsj/41/2/41_155/_article
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Improved performance of InGaN/GaN multilayer solar cells with an atomic-layer-deposited Al2O3 passivation film Reviewed International journal
M. Miyoshi, T. Kabata, T. Tsutsumi, T. Mori, M. Kato, T. Egawa
Electronics Letters 52 ( 14 ) 1246 - 1248 2016.05
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Institution of Engineering and Technology
DOI： 10.1049/el.2016.1574
Other Link： http://digital-library.theiet.org/content/journals/10.1049/el.2016.1574
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Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy Reviewed International journal
Yoshihiro Sugawara, Yukari Ishikawa, Arata Watanabe, Makoto Miyoshi, Takashi Egawa
AIP Advances 6 ( 4 ) 045020-1 - 045020-7 2016.04
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.4948451
Other Link： https://aip.scitation.org/doi/10.1063/1.4948451
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Characterization of dislocations in GaN layer grown on 4-inch Si(111) with AlGaN/AlN strained layer superlattices Reviewed International journal
Yoshihiro Sugawara, Yukari Ishikawa, Arata Watanabe, Makoto Miyoshi, Takashi Egawa
Japanese Journal of Applied Physics 55 ( 5S ) 05FB08-1 - 05FB08-6 2016.04
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.7567/JJAP.55.05FB08/meta;jsessionid=6FD4DC5F76751A85D6490BFD7F13CADE.c2
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Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with n-AlGaN underlayers Reviewed International journal
L. Li, T. Tsutsumi, Y. Miyachi, M. Miyoshi, T. Egawa
Semiconductor Science and Technology 30 ( 12 ) 125012-1 - 125012-5 2015.11
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
DOI： 10.1088/0268-1242/30/12/125012
Other Link： http://iopscience.iop.org/article/10.1088/0268-1242/30/12/125012/meta
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DC characteristics in nearly lattice-matched InAlN/AlGaN heterostructure field-effect transistors Reviewed International journal
Tatsuya Tsutsumi, Gosuke Nishino, Joseph. J. Freedsman, Makoto Miyoshi, Takashi Egawa
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials - SSDM 2015 188 - 189 2015.09
Authorship：Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Japan Society of Applied Physics
DOI： 10.7567/SSDM.2015.PS-6-11
Other Link： https://confit.atlas.jp/guide/organizer/ssdm/ssdm2015/subject/PS-6-11/detail
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Analysis of post-deposition annealing effects on insulator/semiconductor interface of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates Reviewed International journal
Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials - SSDM 2015 192 - 193 2015.09
Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Japan Society of Applied Physics
DOI： 10.7567/SSDM.2015.PS-6-13
Other Link： https://confit.atlas.jp/guide/organizer/ssdm/ssdm2015/subject/PS-6-13/detail
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Transfer-free graphene synthesis on sapphire by catalyst metal agglomeration technique and demonstration of top-gate field-effect transistors Reviewed International journal
Makoto Miyoshi, Masaya Mizuno, Yukinori Arima, Toshiharu Kubo, Takashi Egawa, Tetsuo Soga
Applied Physics Letters 107 ( 7 ) 073102-1 - 073102-4 2015.08
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.4928759
Other Link： http://scitation.aip.org/content/aip/journal/apl/107/7/10.1063/1.4928759
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Numerical and experimental analyses of two-dimensional electron mobility in Al(In,Ga)N/AlGaN heterostructures Reviewed International journal
Makoto Miyoshi, Shu Fujita, Takashi Egawa
Applied Physics Express 8 ( 5 ) 051003-1 - 051003-4 2015.04
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/1882-0786/8/5/051003/
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Nearly lattice-matched InAlN/AlGaN two-dimensional electron gas heterostructures grown by metalorganic chemical vapor deposition Reviewed International journal
Makoto Miyoshi, Shu Fujita, Takashi Egawa
Applied Physics Express 8 ( 2 ) 021001-1 - 021001-4 2015.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/1882-0786/8/2/021001/article
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Demonstration of NOx gas sensing for Pd/ZnO/GaN heterojunction diodes Reviewed International journal
M. Miyoshi, S. Fujita, T. Egawa
Journal of Vacuum Science & Technology B 33 ( 1 ) 013001-1 - 013001-4 2015.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/1.4906032
Other Link： http://scitation.aip.org/content/avs/journal/jvstb/33/1/10.1116/1.4906032
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Study on transfer-free graphene synthesis process utilizing spontaneous agglomeration of catalytic Ni and Co metals Reviewed International journal
M. Miyoshi, M. Mizuno, K. Banno, T. Kubo, T. Egawa, T. Soga
Materials Research Express 2 ( 1 ) 015602-1 - 015602-8 2015.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
DOI： 10.1088/2053-1591/2/1/015602
Other Link： http://iopscience.iop.org/2053-1591/2/1/015602/
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Experimental and simulation study on ultraviolet light emission from quaternary InAlGaN quantum wells with localized carriers Reviewed International journal
Makoto Miyoshi, Masataka Kato, Takashi Egawa
Semiconductor Science and Technology 29 ( 7 ) 075024-1 - 075024-6 2014.06
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
DOI： 10.1088/0268-1242/29/7/075024
Other Link： http://iopscience.iop.org/0268-1242/29/7/075024/
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Transfer-free graphene synthesis on insulating substrates via agglomeration phenomena of catalytic nickel films Reviewed International journal
K. Banno, M. Mizuno, K. Fujita, T. Kubo, M. Miyoshi, T. Egawa, T. Soga
Applied Physics Letters 103 ( 8 ) 082112-1 - 082112-4 2013.08
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.4818342
Other Link： http://scitation.aip.org/content/aip/journal/apl/103/8/10.1063/1.4818342
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Demonstration of AlGaN-based deep-ultraviolet light-emitting diodes on high-quality AlN templates Reviewed International journal
Y. Sakai, Y. Zhu, S. Sumiya, M. Miyoshi, M. Tanaka, T. Egawa
Japanese Journal of Applied Physics 49 ( 2 ) 022102-1 - 022102-4 2010.02
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.1143/JJAP.49.022102/meta
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Device characteristics of metalorganic chemical vapor deposition-grown InAlN/GaN high-electron –mobility transistors on AlN/sapphire template Reviewed International journal
J. Selvaraj, S. L. Selvaraj, M. Miyoshi, Y. Kuraoka, M. Tanaka, T. Egawa
Japanese Journal of Applied Physics 48 ( 4 ) 04C102-1 - 04C102-4 2009.04
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
Other Link： http://iopscience.iop.org/article/10.1143/JJAP.48.04C102/meta
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Suppression of the subband parasitic peak by 1 nm i-AlN interlayer in AlGaN deep ultraviolet light-emitting diodes Reviewed International journal
J. C. Zhang, Y. H. Zhu, T. Egawa, S. Sumiya, M. Miyoshi, M. Tanaka
Applied Physics Letters 93 ( 13 ) 131117 - 131119 2008.10
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/1.2996580
Other Link： http://scitation.aip.org/content/aip/journal/apl/93/13/10.1063/1.2996580
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Device characteristics of MOCVD-grown InAlN/GaN HEMTs on AlN/sapphire template Reviewed International journal
Josephine Selvaraj, Lawrence Selvaraj, Makoto Miyoshi, Yoshitaka Kuraoka, Mitsuhiro Tanaka, Takashi Egawa
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials - SSDM 2008 152 - 153 2008.09
Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Japan Society of Applied Physics
Other Link： https://confit.atlas.jp/guide/organizer/ssdm/ssdm2008/subject/G-1-4/detail
