Papers - MIYOSHI Makoto
-
AlN/AlGaN heterojunction field-effect transistors with a high-AlN-mole-fraction Al0.72Ga0.28N channel grown on a single-crystal AlN substrate by metalorganic chemical vapor deposition Reviewed International journal
Yoshinobu Kometani, Tomoyuki Kawaide, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
Japanese Journal of Applied Physics 65 ( 11 ) 111003-1 - 111003-5 2024.11
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.35848/1347-4065/ad85ed
Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ad85ed/meta
-
Improved performance of InGaN/GaN multiple-quantum-wells photovoltaic devices on free-standing GaN substrates with TMAH treatment Reviewed International journal
Nan Hu, Takahiro Fujisawa, Akira Mase, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi
Solar Energy Materials and Solar Cells 275 ( 15 ) 113025-1 - 113025-7 2024.07
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
-
Characterizations of the sub-bandgap optical absorption in an undoped-GaN and a 90-nm-thick Al1-xInxN thin film on a sapphire substrate grown by MOCVD Reviewed International journal
Kouki Noda, Yuto Murakami, Hayata Toyoda, Kana Shibata, Youna Tsukada, Daichi Imai, Tetsuya Takeuchi, Makoto Miyoshi, Takao Miyajima
Physica Status Solidi B: Basic Solid State Physics 261 2400029-1 - 2400029-7 2024.05
Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
Other Link： https://onlinelibrary.wiley.com/doi/10.1002/pssb.202400029
-
Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate Reviewed International journal
Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
Applied Physics Letters 124 ( 18 ) 18210-1 - 18210-4 2024.05
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0187043
Other Link： https://pubs.aip.org/aip/apl/article/124/18/182102/3286954/Current-collapse-suppression-in-AlGaInN-GaN-HEMTs
-
Over 43%-power-efficiency GaInN-based photoelectric transducer on free-standing GaN substrate for optical wireless power transmission system Reviewed International journal
Takahiro Fujisawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi
Semiconductor Science and Technology 39 ( 4 ) 045010-1 - 045010-6 2024.02
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
Other Link： https://iopscience.iop.org/article/10.1088/1361-6641/ad2d62
-
Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns Reviewed International journal
Yukari Ishikawa, Yoshihiro Sugawara, Yongzhao Yao, Makoto Miyoshi, Takashi Egawa
Journal of Materials Science 59 ( 7 ) 2974 - 2987 2024.02
Language：English Publishing type：Research paper (scientific journal) Publisher：Springer
DOI： https://doi.org/10.1007/s10853-024-09392-z
Other Link： https://link.springer.com/article/10.1007/s10853-024-09392-z#citeas
-
Sub-bandgap optical absorption processes in 300-nm-thick Al1-xInxN alloys grown on a c-plane GaN/sapphire template Reviewed International journal
Daichi Imai, Yuto Murakami, Hayata Toyoda, Kouki Noda, Kyosuke Masaki, Kazutoshi Kubo, Mayu Nomura, Takao Miyajima, Makoto Miyoshi, Tetsuya Takeuchi
Journal of Applied Physics 135 ( 3 ) 035703-1 - 035703-8 2024.01
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0181231
Other Link： https://pubs.aip.org/aip/jap/article/135/3/035703/3000640/Sub-bandgap-optical-absorption-processes-in-300-nm
-
Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different-hole-concentration p-base layers Reviewed International journal
Akira Mase, Yusuke Iida, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi
Journal of Vacuum Science & Technology B 41 ( 5 ) 052206-1 - 052206-6 2023.09
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： 10.1116/6.0002577
Other Link： https://pubs.aip.org/avs/jvb/article/41/5/052206/2909805/Simulation-analyses-of-carrier-dynamics-in-npn
-
Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer Reviewed International journal
Akira Mase, Pradip Dalapati, Ryosuke Hayafuji, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa
Semiconductor Science and Technology 38 ( 9 ) 095005-1 - 095005-6 2023.08
Language：English Publishing type：Research paper (scientific journal) Publisher：IOP
Other Link： https://iopscience.iop.org/article/10.1088/1361-6641/aceaa2
-
Current-driven degradation dynamics in GaN/InGaN multi-quantum-wells UV photodetectors fabricated with a high-quality Al2O3 passivation film Reviewed International journal
Pradip Dalapati, Takashi Egawa, Makoto Miyoshi
Vaccum 213 112159-1 - 112159-6 2023.05
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.vacuum.2023.112159
Other Link： https://www.sciencedirect.com/science/article/pii/S0042207X23003561?via%3Dihub
-
DC and pulse I-V characteristics of strain-engineered AlGaInN/GaN HEMTs fabricated on single-crystal AlN substrate Reviewed International journal
Makoto Miyoshi, Sakura Tanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa
Physica Status Solidi A: Applications and Materials Science 220 2200733-1 - 2200733-5 2023.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
Other Link： https://onlinelibrary.wiley.com/doi/10.1002/pssa.202200733
-
Growth and microstructure analyses of semipolar AlInN epitaxial layers on a fully relaxed semipolar {11-22} GaInN/GaN/m-plane sapphire template Reviewed International journal
Makoto Miyoshi, Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Tetsuya Takeuchi, Narihito Okada, Kazuyuki Tadatomo
Physica Status Solidi B: Basic Solid State Physics 260 2200492-1 - 2200492-8 2023.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
Other Link： https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.202200492
-
High temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors: Analysis of photovoltaic and carrier transit time properties Reviewed International journal
Pradip Dalapati, Takashi Egawa, Makoto Miyoshi
Journal of Vacuum Science & Technology B 40 ( 6 ) 062210-1 - 062210-7 2022.11
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：AVS
DOI： doi.org/10.1116/6.0002101
Other Link： https://avs.scitation.org/doi/10.1116/6.0002101
-
Room-temperature nonradiative recombination lifetimes in c-plane Al1-xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21) Reviewed International journal
L. Y. Li, K. Shima, M. Yamanaka, T. Egawa, T. Takeuchi, M. Miyoshi, S. Ishibashi, A.Uedono, S. F. Chichibu
Journal of Applied Physics 132 ( 16 ) 163102-1 - 163102-10 2022.10
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP
DOI： 10.1063/5.0106540
Other Link： https://aip.scitation.org/doi/10.1063/5.0106540
-
Current-induced degradation behaviors of InGaN/GaN multiple-quantum-well UV photodetectors: Role of electrically active defects Reviewed International coauthorship International journal
Pradip Dalapati, Abdulaziz Almalki, Sultan Alhassan, Saud Alotaibi, Maryam Al Huwayz, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi, Mohamed Henini
Sensors and Actuators: A. Physical 347 113935-1 - 113935-8 2022.10
Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： https://doi.org/10.1016/j.sna.2022.113935
Other Link： https://www.sciencedirect.com/science/article/abs/pii/S0924424722005702
-
Simulation analyses of carrier dynamics in npn-type GaN-HBTs with different-hole-concentration p-base layers Reviewed International journal
Akira Mase, Yutaka Nikai, Yusuke Iida, Masaya Takimoto, Takashi Egawa, Makoto Miyoshi
2022 Compound Semiconductor Week, CSW 2022 - Proceedings 2022.06
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (international conference proceedings) Publisher：IEEE
DOI： 10.1109/CSW55288.2022.9930408
Other Link： https://ieeexplore.ieee.org/abstract/document/8819345
-
The role of p-GaN layer thickness for the evaluation of high-performance and ultrafast GaInN/GaN multiple quantum wells UV photodetectors Reviewed International journal
Pradip Dalapati, Taiki Nakabayashi, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Optical Materials 127 112284-1 - 112284-9 2022.05
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
DOI： 10.1016/j.optmat.2022.112284
Other Link： https://www.sciencedirect.com/science/article/pii/S0925346722003184?dgcid=coauthor
-
Simulation study on novel GaN-based npn heterojunction bipolar transistors with a quaternary AlGaInN emitter and a two-dimensionally conductive base Reviewed International journal
Akira Mase, Yutaka Nikai, Yusuke Iida, Takashi Egawa, Makoto Miyoshi
Physica Status Solidi A: Applications and Materials Science 219 ( 4 ) 2100397-1 - 2100397-5 2022.02
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：WILEY-VCH
Other Link： https://onlinelibrary.wiley.com/doi/10.1002/pssa.202100397
-
High drain-current-density and high breakdown-field Al0.36Ga0.64N-channel heterojunction filed-effect transistors with a dual AlN/AlGaInN barrier layer Reviewed International journal
Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
Japanese Journal of Applied Physics 61 ( SC ) SC1039-1 - SC1039-6 2022.02
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.35848/1347-4065/ac4b09
Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ac4b09
-
Near-bandgap optical properties of Al1-xInxN thin films grown on a c-plane freestanding GaN substrate Reviewed International journal
Hayata Toyoda, Yuto Murakami, Rino Miyata, Daichi Imai, Makoto Miyoshi, Tetsuya Takeuchi, Takao Miyajima
Japanese Journal of Applied Physics 61 ( SA ) SA1017-1 - SA1017-5 2022.01
Language：English Publishing type：Research paper (scientific journal) Publisher：The Japan Society of Applied Physics
DOI： 10.35848/1347-4065/ac148a
Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ac148a
PREV - 