ICHIMURA Masaya

写真a

Affiliation Department

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering

Title

Professor

Contact information

Contact information

External Link

Degree

  • Master of Engineering

  • Doctor of Engineering

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

From School

  • 京都大学   工学部   電気工学   Graduated

    - 1983.03

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    Country:Japan

From Graduate School

  • 京都大学   工学研究科   電気工学   Doctor's Course   Completed

    - 1988.03

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    Country:Japan

Professional Memberships

  • The Materials Research Society of Japan

    2010.09

  • 応用物理学会

  • 表面真空学会

  • 電気学会

 

Research Career

  • Electrical Characterization of Semiconductors

    (not selected)  

    Project Year:

  • Electro- and photochemical Deposition of Semiconductors

    (not selected)  

    Project Year:

Papers

  • Theoretical study of doping in GaOOH for electronics applications Reviewed

    Electron. Mater.   4 ( 4 )   148 - 157   2023.11

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    Other Link: https://www.mdpi.com/2673-3978/4/4/13

  • Drop-Dry Deposition of SnO2 Using a Complexing Agent and Fabrication of Heterojunctions with Co3O4 Reviewed

    T. Li, M. Ichimura

    Materials   16   5273   2023.08

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    Other Link: https://www.mdpi.com/1996-1944/16/15/5273

  • Low temperature processed CO2 laser-assisted RF-sputtered GaN thin film for wide bandgap semiconductors Reviewed International coauthorship

    S.-H. Kim, C.-H. Jo, M.-S. Bae, M. Ichimura and J.-H. Koh

    J. Asian Ceramic Soc.   10 ( 1 )   68 - 79   2023.01

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Fabrication of Transparent ZnO/Cu-Mg(OH)2 Heterojunction Diodes by Electrochemical Deposition Reviewed

    M. Ichimura, M. Tanaka, T. Li

    Solid St. Electron.   198   108479   2022.12

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  • Drop-dry deposition of Ni(OH)2 precursors for fabrication of NiO thin films Reviewed

    T. Li, T. Okada, M. Ichimura

    Materials   15   4513   2022.07

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  • Hole capture cross section of the Al acceptor level in 4H-SiC Reviewed

    M. Kato, J. Di, Y. Ohkouchi, T. Mizuno, M. Ichimura, K. Kojima

    Mater. Today Commun.   31   103648   2022.04

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Fabrication of a Co3O4/ZnO Heterostructure by Electrochemical Deposition Reviewed International journal

    M. Ichimura, Y. Tomita

    Int. J. Electrochem. Sci.   16 ( 12 )   211223   2021.12

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

  • Drop-dry Deposition of Co3O4 and Fabrication of Heterojunction Solar Cells with Electrochemically Deposited ZnO Reviewed International journal

    T. Li, M. Ichimura

    Semicond. Sci. Technol.   36   095030   2021.09

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Galvanostatic electrochemical deposition of Cu-doped Mg(OH)2 thin films and fabrication of p-n homojunction Reviewed International coauthorship International journal

    J. Kang, M. Keikhaei, T. Li, M. Ichimura

    Mater. Res. Bull.   137   111207   2021.05

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Fabrication of transparent Mg(OH)2 thin films by drop-dry deposition Reviewed International journal

    T. Li, M. Ichimura

    Materials   14   724   2021.04

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    Language:English   Publishing type:Research paper (scientific journal)  

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Books and Other Publications

  • 太陽電池入門

    市村正也( Role: Sole author)

    オーム社  2012.04  ( ISBN:978-4-274-21191-1

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    Language:jpn   Book type:Scholarly book

  • 工学系のための応用数学

    市村正也, 森田良文( Role: Joint author)

    森北出版  2018.09  ( ISBN:978-4-627-08201-4

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    Language:jpn   Book type:Textbook, survey, introduction

  • 高校化学からはじめる半導体

    市村正也( Role: Sole author)

    オーム社  2011.03  ( ISBN:978-4-274-20996-3

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    Language:jpn   Book type:Textbook, survey, introduction

  • 新インターユニバーシティ半導体工学

    -( Role: Joint author)

    オーム社  2009.04 

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    Language:jpn  

  • 新インターユニバーシティ固体電子物性

    -( Role: Joint author)

    オーム社  2009.04 

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    Language:jpn  

  • インターユニバーシティ半導体工学

    -( Role: Joint author)

    オーム社  1999.04 

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    Language:jpn  

  • 半導体物性工学

    -( Role: Joint author)

    朝倉書店  1990.04 

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    Language:jpn  

Misc

  • 水素エネルギーと地球温暖化対策 Reviewed

    市村正也

    58 ( 3 )   150 - 154   2023.03

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    Other Link: https://www.jstage.jst.go.jp/article/jjsci/58/3/58_38/_article/-char/ja/

  • Meaningful and Meaningless Solar Cell Researches Reviewed

    56 ( 6 )   42   2021.06

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

  • Tips for vacuum measurement Invited Reviewed

    85 ( 6 )   508   2016.06

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

  • Tips for Basic Vacuum Science and Technology

    M. Ichimura

    85 ( 1 )   49 - 52   2016.01

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

  • Introduction to Vacuum Science and Technology for Absolute Beginners

    M. Ichimura

    58 ( 8 )   273 - 281   2015.08

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

  • 電気化学堆積法を用いたSnS 系ヘテロ接合太陽電池の開発

    市村正也

    106 - 113   2012.05

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (other)   Publisher:NTS  

  • 硫化物を用いた薄膜太陽電池

    市村正也

    17 ( 10 )   41 - 46   2011.10

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Publisher:テクノタイムズ社  

  • Thin film Si solar cells

    29 - 36   2008.11

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (other)  

Presentations

  • Possibility of Doping in GaOOH International conference

    M. Ichimura

    Grand Meeting MRM&ICA2023  2023.12  Materials Research Society of Japan

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    Event date: 2023.12

    Language:English   Presentation type:Poster presentation  

    Venue:Kyoto   Country:Japan  

  • Dip-dry Deposition of Semiconducting Al-O Thin Films International conference

    M. Ichimura, C. Baixian, T. Li

    Grand Meeting MRM&ICA2023  2023.12  Materials Research Society of Japan

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    Event date: 2023.12

    Language:English   Presentation type:Poster presentation  

    Venue:Kyoto   Country:Japan  

  • Fe2O3-based pn junction solar cells with a Mg(OH)2 interface layer

    M. Ichimura, R. Takayanagi

    Symposium on Earth-Abundant Materials for Future Photovoltaics  2022.06  École Polytechnique Fédérale de Lausanne

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    Event date: 2022.06

    Language:English   Presentation type:Poster presentation  

  • Fabrication of Transparent ZnO/Cu-Mg(OH)2 Heterojunction Diodes by Electrochemical Deposition International conference

    M. Tanaka, M. Ichimura

    Material Research Meeting 2021 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

  • Drop-dry Deposition of Co3O4 and Fabrication of Heterojunctions with Electrochemically Deposited ZnO International conference

    T. Li, M. Ichimura

    Material Research Meeting 2021 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

  • Fabrication of Transparent ZnO/(CuZn)O Heterojunction Diodes by Electrochemical Deposition International conference

    M. KEIKHAEI, M. ICHIMURA

    Materials Research Meeting 2019 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

  • Fabrication of ZnO/Co3O4 Heterojunction by Electrochemical Deposition International conference

    Y. TOMITA, M. ICHIMURA

    Materials Research Meeting 2019 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

  • Fe2O3-based pn junction solar cell fabricated by electrochemical deposition International conference

    M. ICHIMURA, S. KOBAYASHI

    Materials Research Meeting 2019 

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    Event date: 2019.12

    Language:English   Presentation type:Poster presentation  

  • Fabrication of ZnO/NiO transparent solar cells by electrochemical deposition International conference

    M. Koyama, M. Ichimura

    7th Int. Symp. Organic and Inorganic Electronic Matererials and Related Nanotechnology 

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    Event date: 2019.06

    Language:English   Presentation type:Poster presentation  

  • Fabrication of p-type Transparent CuZnO Thin Films by the Electrochemical Deposition Method International conference

    M. Keikhaei, M. Ichimura

    7th Int. Symp. Organic and Inorganic Electronic Matererials and Related Nanotechnology 

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    Event date: 2019.06

    Language:English   Presentation type:Oral presentation (general)  

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Industrial Property Rights

  • 光起電力素子およびその製造方法

    川井正一、祖父江進、市村正也

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    Application no:特願2013-171577  Date applied:2013.11

    Country of applicant:Domestic   Country of acquisition:Domestic

  • Method for forming gold plating

    Masaya Ichimura, Kanji Masui

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    Application no:10/895498  Date applied:2004.07

    Announcement no:7641944B2  Date announced:2010.03

    Patent/Registration no:7641944  Date registered:2010.01  Date issued:2010.01

    Country of applicant:Foreign country   Country of acquisition:Foreign country

  • Method and apparatus for forming gold plating by photochemical deposition

    Masaya Ichimura, Kanji Masui

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    Application no:2004-210430  Date applied:2004.07

    Announcement no:2005-60828  Date announced:2005.03

    Patent/Registration no:4521228  Date registered:2010.05  Date issued:2010.05

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 化合物半導体の製造方法及び製造装置

    -市村正也,荒井英輔,後藤文孝

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    Announcement no:2958448  Date announced:1998.12

    Country of applicant:Domestic   Country of acquisition:Domestic

Awards

  • SEMI Silicon Wafer Committee, Technical Committee Award 2006

    2006.04  

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    Country:Japan

  • Prof. Ramasamy National Award for Crystal Growth 2004

    2004.04  

 

Committee Memberships

  • 日本MRS   第20回日本MRS学術シンポジウムEセッションコチェア  

    2010.07 - 2010.12   

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    Committee type:Academic society