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Affiliation Department |
Department of Electrical and Mechanical Engineering
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Title |
Professor |
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Homepage |
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KATO Masashi
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Research Areas
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials / 半導体材料工学
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment / 半導体デバイス工学
From School
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Nagoya Institute of Technology Faculty of Engineering Electrical and Computer Engineering Graduated
- 1998.03
Country：Japan
From Graduate School
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Nagoya Institute of Technology Graduate School, Division of Engineering Electrical and Computer Engineering Doctor's Course Completed
- 2003.03
Country：Japan
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Nagoya Institute of Technology Graduate School, Division of Engineering Electrical and Computer Engineering Master's Course Completed
- 2000.03
Country：Japan
External Career
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Vilnius University Researcher
2009.08 - 2009.10
Country：Lithuania
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Vilnius University Researcher
2008.08 - 2008.10
Country：Lithuania
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ヴィリニュス大学 研究員
2010.08 - 2010.09
Country：Lithuania
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Nagoya University
2016.07 - 2021.03
Country：Japan
Professional Memberships
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第 18 回結晶成長国際会議（ICCGE-18）実行委員会（現地実行委員）
2014.09 - 2016.08
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文部科学省科学技術政策研究所科学技術動向研究センター専門調査員
2014.02 - 2020.03
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自動車技術会
2013.01
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GV（グリーンビークル）マテリアルイノベーションの戦略マップ策定・ロードマップ作成およびそれらの「見える化」
2010.09 - 2011.01
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IEEE
2005.01 - 2010.12
Research Career
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単結晶半導体を利用した人工光合成技術開発
(not selected)
Project Year： 2010.04
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アナログ集積回路による低消費電力、高速信号処理
(not selected)
Project Year： 2003.03 - 2017.03
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電気化学法による半導体の加工
(not selected)
Project Year： 2000.03
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ワイドギャップ半導体の電気的評価と評価技術の開発
(not selected)
Project Year： 1997.04
Papers
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Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation Reviewed International journal
Tong Li, Hitoshi Sakane, Shunta Harada, Masashi Kato
Applied Physics Express 17 086503-1 - 086503-4 2024.08
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.35848/1882-0786/ad6be5
DOI： 10.35848/1882-0786/ad6be5
Other Link： https://iopscience.iop.org/journal/1882-0786
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Analysis of defects dominating carrier recombination in CeO2 single crystal for photocatalytic applications Reviewed International coauthorship International journal
Endong Zhang, Christoph J Brabec, Masashi Kato
Journal of Physics D: Applied Physics 57 305104-1 - 305104-7 2024.05
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
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Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV Reviewed International coauthorship International journal
Manuel Belanche, Yoshiyuki Yonezawa, Rene Heller, Arnold Muller, Christof Vockenhuber, Corinna Martinella, Michael Rub, Masashi Kato, Koichi Murata, Hidekazu Tsuchida, Koji Nakayama, Ulrike Grossner
Materials Science in Semiconductor Processing 179 108461-1 - 108461-8 2024.05
Language：English Publishing type：Research paper (scientific journal)
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Photoelectrical characterization of heavily doped p-SiC Schottky contacts Reviewed International journal
Hiroki Imabayashi, Hitose Sawazaki, Haruto Yoshimura, Masashi Kato, Kenji Shiojima
Japanese Journal of Applied Physics 63 ( 4 ) 04SP71-1 - 04SP71-6 2024.04
Language：English Publishing type：Research paper (scientific journal)
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Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate Reviewed International journal
Masashi Kato, Ohga Watanabe, Shunta Harada, Hitoshi Sakane
Materials Science in Semiconductor Processing 175 108264-1 - 108264-5 2024.02
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Mitigation of carrier trapping effects on carrier lifetime measurements with continuous-wave laser illumination for Pb-based metal halide perovskite materials Reviewed International coauthorship International journal
Ntumba Lobo, Gebhard J. Matt, Andres Osvet, Shreetu Shrestha, Andrii Kanak, Petro Fochuk, Christoph J. Brabec, Masashi Kato
Journal of Applied Physics 135 074905-1 - 074905-7 2024.02
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1063/5.0181654
DOI： 10.1063/5.0181654
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Effect of dislocations on carrier recombination and photoelectrochemical activity in polished and unpolished TiO2 and SrTiO3 crystals Reviewed International journal
Endong Zhang, Mingxin Zhang, Masashi Kato
Journal of Applied Physics 135 045102-1 - 045102-9 2024.01
Authorship：Last author Language：English Publishing type：Research paper (scientific journal)
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Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective Reviewed International journal
Masashi Kato, Shunta Harada, Hitoshi Sakane
Japanese Journal of Applied Physics 63 020804-1 - 020804-6 2024.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions Reviewed International journal
Kazuhiro Tanaka, Masashi Kato
Japanese Journal of Applied Physics 63 011002-1 - 011002-5 2024.01
Authorship：Last author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
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Unravelling material properties of halide perovskites by combined microwave photoconductivity and time-resolved photoluminescence spectroscopy Reviewed International coauthorship International journal
Journal of Materials Chemistry C 2023.12
Language：English Publishing type：Research paper (scientific journal)
DOI： 10.1039/d3tc03867j
Books and Other Publications
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監修者 岩室 憲幸（ Role： Contributor , 第１編 第１章 第３節）
(株)エヌ・ティー・エス 2022.02
Total pages：414 Responsible for pages：31-38 Language：jpn Book type：General book, introductory book for general audience
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薄膜の評価技術ハンドブック
加藤 正史（ Role： Joint editor , 第2章第4節第4項 DLTS法）
株式会社テクノシステム 2013.01
Language：jpn Book type：Scholarly book
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ＳｉＣパワーデバイスの開発と最新動向 －普及に向けたデバイスプロセスと実装技術－
加藤正史（ Role： Sole author , 第３章第４節 陽極酸化欠陥抑制法によるn型4H-SiCのショットキーダイオードの整流特性改善）
S&T出版 2012.10 （ ISBN:978-4-907002-06-0 ）
Language：jpn Book type：Scholarly book
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ＳｉＣパワーデバイス最新技術 ＝次世代パワーエレクトロニクス＝
加藤 正史（ Role： Sole author , 第１２章．ＳｉＣへの金属電極の形成方法）
サイエンス＆テクノロジー株式会社 2010.05 （ ISBN:9784903413846 ）
Language：jpn Book type：Scholarly book
Misc
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パワーデバイス材料SiC の表面再結合速度を数値化
加藤 正史
55 ( 9 ) 699 - 699 2020.09
Authorship：Lead author Language：Japanese Publishing type：Book review, literature introduction, etc.
Other Link： http://www.ceramic.or.jp/ihensyub/topics/topics2020.9.pdf
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高耐性セラミックスSiCの新たな応用可能性：人工光合成 Invited
加藤 正史
54 ( 1 ) 36 - 39 2019.01
Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (scientific journal) Publisher：日本セラミックス協会
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人はなぜ研究者を続けることができるか
加藤 正史
86 ( 6 ) 505 - 506 2017.06
Authorship：Lead author Language：Japanese
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SiC光陰極による人工光合成
加藤 正史
62 ( 1 ) 19 - 23 2017.01
Authorship：Lead author Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media) Publisher：化学工業社
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半導体を用いた水素生成技術
加藤 正史
85 ( 2 ) 100 - 104 2016.02
Authorship：Lead author Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (international conference proceedings) Publisher：公益社団法人 応用物理学会
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ハウリングを高速応答のアナログ回路で除去
加藤正史、久保真奈美、谷口淳紀、ナラサンビ アヌスヤ
65 - 71 2014.10
Authorship：Lead author Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media) Publisher：日経BP社
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世界初！「SiCと水から水素を製造！」
加藤正史
( 2月 ) 64 - 66 2014.02
Authorship：Lead author Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media) Publisher：技術情報協会
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シリコンカーバイドの太陽光吸収を利用した水素生成
加藤 正史
58 ( 10 ) 7 - 11 2013.10
Authorship：Lead author Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media) Publisher：化学工業社
Presentations
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Charge carrier recombination in TiO2 and SrTiO3 single crystals: impact of CoOx cocatalyst loading International conference
Endong Zhang, Toru Takayoshi, Zhenhua Pan, Masashi Kato
the 35th International Photovoltaic Science and Engineering Conference (PVSEC-35) 2024.11
Event date： 2024.11
Language：English Presentation type：Poster presentation
Venue：Numazu Country：Japan
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Technologies to Suppress Stacking Fault Expansion in SiC Devices: Stacking Fault Knockdown by High Energy Ion Implantation (SF-KHII) M Invited International conference
Masashi Kato, Shunta Harada, Hitoshi Sakane
The 11th Asia-Pacific Workshop on Widegap Semiconductors 2024.10 Korea Society of LEDs and Optoelectronics (KSLOE)
Event date： 2024.10
Language：English Presentation type：Oral presentation (invited, special)
Venue：Hanwha Resorts Haeundae, Busan, Korea Country：Korea, Republic of
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Proton implantation into substrate and stacking faults in epitaxial layers International conference
Masashi Kato, Ohga Watanabe, Shunta Harada, Hitoshi Sakane
INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS 2024 2024.10
Event date： 2024.09 - 2024.10
Language：English Presentation type：Poster presentation
Venue：Raleigh Convention Center 500 S Salisbury St, Raleigh, NC 27601 Country：United States
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Role of Point Defects in Suppressing Stacking Fault Expansion through Helium and Proton Implantation in SiC Epitaxial Layer International conference
Shunta Harada, Hitoshi Sakane, Masashi Kato
INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS 2024 2024.10
Event date： 2024.09 - 2024.10
Language：English Presentation type：Oral presentation (general)
Venue：Raleigh Convention Center 500 S Salisbury St, Raleigh, NC 27601 Country：United States
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Demonstration of Suppressing 1SSF Expansion Using Energy Filtered Ion Implantation International conference
Hitesh Jayaprakash, Constantin Csato, Masashi Kato, Tong Li, Florian Krippendorf, Michael Rueb, Joerg Schulze
INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS 2024 2024.10
Event date： 2024.09 - 2024.10
Language：English Presentation type：Oral presentation (general)
Venue：Raleigh Convention Center 500 S Salisbury St, Raleigh, NC 27601 Country：United States
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Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation International conference
Tong Li, Hitoshi Sakane, Shunta Harada, Masashi Kato
INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS 2024 2024.10
Event date： 2024.09 - 2024.10
Language：English Presentation type：Oral presentation (general)
Venue：Raleigh Convention Center 500 S Salisbury St, Raleigh, NC 27601 Country：United States
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Controlled domain in 3C-SiC epitaxial growth on off-oriented 4H-SiC substrate for water splitting International conference
Kongshik Rho, Jun Fujita, Masashi Kato
INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS 2024 2024.10
Event date： 2024.09 - 2024.10
Language：English Presentation type：Poster presentation
Venue：Raleigh Convention Center 500 S Salisbury St, Raleigh, NC 27601 Country：United States
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Hydrogen and point defect introduction into 4H-SiC by plasma treatment International conference
Tong Li, Hitoshi Sakane, Shunta Harada, Yasuyoshi Kurokawa, Masashi Kato
INTERNATIONAL CONFERENCE ON SILICON CARBIDE AND RELATED MATERIALS 2024 2024.09
Event date： 2024.09 - 2024.10
Language：English Presentation type：Poster presentation
Venue：Raleigh Convention Center 500 S Salisbury St, Raleigh, NC 27601 Country：United States
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Toward Eliminating SiC Bipolar Degradation by Stacking Fault Knockdown by High Energy Ion Implantation (SF-KHII) Method Invited International conference
Shunta Harada, Hitoshi Sakane, Masashi Kato
24th International Conference on Ion Implantation Technology 2024 (24th IIT 2024) 2024.09
Event date： 2024.09
Language：English Presentation type：Oral presentation (invited, special)
Country：Japan
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[20p-C32-7] シリコン界面のパッシベーションに及ぼすPEDOT:PSSの微細構造の影響
山中 健吾、黒川 康良、加藤 正史、曾我 哲夫、加藤 慎也
2024年第85回応用物理学会秋季学術講演会 2024.09
Event date： 2024.09
Language：Japanese Presentation type：Oral presentation (general)
Venue：朱鷺メッセ
Industrial Property Rights
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半導体装置および半導体装置の製造方法
坂根 仁、加藤 正史、原田 俊太
Applicant：住重アテックス株式会社
Application no：特願2024-103863 Date applied：2024.06
Publication no：特開2024-114877 Date published：2024.08
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前庭刺激装置、めまい治療装置、健康促進装置
加藤 昌志、大神 信孝、曾根 三千彦、杉本 賢文、加藤 正史
Application no：特願2018-104637 Date applied：2018.05
Patent/Registration no：19230941 Date registered：2021.07 Date issued：2021.07
Country of applicant：Domestic Country of acquisition：Domestic
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高変換効率ＳｉＣ光電極およびそれを用いた水素製造装置
加藤正史、市川尚澄
Application no：特願2016-033015 Date applied：2016.02
Country of applicant：Domestic Country of acquisition：Domestic
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高変換効率ＳｉＣ光電極およびそれを用いた水素製造装置
加藤 正史,長谷川 貴大,市川 尚澄
Application no：特願2015-076647 Date applied：2015.04
Country of applicant：Domestic Country of acquisition：Domestic
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高変換効率ＳｉＣ光電極およびそれを用いた水素製造装置
加藤 正史、長谷川 貴大、市川 尚澄
Application no：特願2015-014184 Date applied：2015.01
Country of applicant：Domestic Country of acquisition：Domestic
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高変換効率ＳｉＣ光電極
加藤 正史、長谷川 貴大、市川 尚澄
Application no：2014-227634 Date applied：2014.11
Country of applicant：Domestic Country of acquisition：Domestic
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界面抵抗を低減したＳｉＣ光電極およびその製造方法、ならびにＳｉＣ光電極を用いた水素製造装置
加藤 正史, 長谷川 貴大
Application no：2014-015515 Date applied：2014.01
Country of applicant：Domestic Country of acquisition：Domestic
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半導体キャリアライフタイム測定方法
加藤 正史,森 祐人
Application no：2013-165683 Date applied：2013.08
Country of applicant：Domestic Country of acquisition：Domestic
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ハウリング低減システム及びそれに用いられるアナログ電子回路
加藤正史、久保真奈美
Application no：特願2013-051477 Date applied：2013.03
Country of applicant：Domestic Country of acquisition：Domestic
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ハウリング低減システム及びそれに用いられるアナログ電子回路
加藤 正史，久保 真奈美，谷口 淳紀
Application no：特願2013-051488 Date applied：2013.03
Country of applicant：Domestic Country of acquisition：Domestic
Awards
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永井技術賞
2021.03 永井科学技術財団 SiC単結晶内の電気伝導キャリアの評価および制御技術開発
加藤正史
Award type：Award from publisher, newspaper, foundation, etc. Country：Japan
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Japanese Journal of Applied Physics: 2020 Reviewer Awards
2021 IOP Publishing
Masashi Kato
Award type：Honored in official journal of a scientific society, scientific journal Country：Japan
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the Award for Encouragement of Research in IUMRS-ICA2014
2014.10 MRS-J
Masashi Kato
Award type：Award from international society, conference, symposium, etc. Country：Japan
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文部科学大臣表彰科学技術賞（理解増進部門）
2014.04 文部科学省
平田晃正、丸田章博、加藤正史、江龍修
Country：Japan
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安藤博記念学術奨励賞
2010.06 財団法人安藤研究所
加藤正史
Award type：Award from publisher, newspaper, foundation, etc. Country：Japan
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電子情報通信学会学生研究奨励賞
2003.06 -
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Country：Japan
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Best Paper Award
2003.02 The Indian Science Congress Association, Chennai Chapter
Masashi Kato, Masaya Ichimura, Eisuke Arai
Award type：Award from international society, conference, symposium, etc. Country：India
Committee Memberships
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ICSCRM2025 Technical Program Committee
2025.01 - 2025.12
Committee type：Academic society
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SSDM2025 Technical Program Committee: Area4 Vice-chair
2025.01 - 2025.12
Committee type：Academic society
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ICSCRM2026組織委員会 ICSCRM2026組織委員会 委員
2024.08 - 2029.09
Committee type：Academic society
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ISPlasma 2025/IC-PLANTS2025 programming committee Vice chair
2024.06 - 2025.05
Committee type：Academic society
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中部エレクトロニクス振興会 顧問
2024.04
Committee type：Other
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公益社団法人応用物理学会 代議員
2024.03 - 2025.02
Committee type：Academic society
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ICSCRM2024 Technical Program Committee
2024.01 - 2024.12
Committee type：Academic society
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SSDM2024 Technical Program Committee: Area4 Vice-chair
2024.01 - 2024.12
Committee type：Academic society
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24th International Conference on Ion Implantation Technology 2024 Technical Program Committee Member
2023.10 - 2024.09
Committee type：Academic society
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APSPT-13/ISPlasma 2024/IC-PLANTS2024 programming committee
2023.06 - 2024.05
Committee type：Academic society