KATO Masashi

写真a

Affiliation Department

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Center for Research and Development in Higher Engineering-Education

Title

Professor

Homepage

http://ik-lab.web.nitech.ac.jp/

External Link

Degree

  • Doctor (Engineering) ( Nagoya Institute of Technology )

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials  / 半導体材料工学

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment  / 半導体デバイス工学

From School

  • Nagoya Institute of Technology   Faculty of Engineering   Electrical and Computer Engineering   Graduated

    - 1998.03

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    Country:Japan

From Graduate School

  • Nagoya Institute of Technology   Graduate School, Division of Engineering   Electrical and Computer Engineering   Doctor's Course   Completed

    - 2003.03

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    Country:Japan

  • Nagoya Institute of Technology   Graduate School, Division of Engineering   Electrical and Computer Engineering   Master's Course   Completed

    - 2000.03

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    Country:Japan

External Career

  • Vilnius University   Researcher

    2009.08 - 2009.10

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    Country:Lithuania

  • Vilnius University   Researcher

    2008.08 - 2008.10

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    Country:Lithuania

  • ヴィリニュス大学   研究員

    2010.08 - 2010.09

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    Country:Lithuania

  • Nagoya University

    2016.07 - 2021.03

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    Country:Japan

Professional Memberships

  • 第 18 回結晶成長国際会議(ICCGE-18)実行委員会(現地実行委員)

    2014.09 - 2016.08

  • 文部科学省科学技術政策研究所科学技術動向研究センター専門調査員

    2014.02 - 2020.03

  • 自動車技術会

    2013.01

  • GV(グリーンビークル)マテリアルイノベーションの戦略マップ策定・ロードマップ作成およびそれらの「見える化」

    2010.09 - 2011.01

  • IEEE

    2005.01 - 2010.12

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Research Career

  • 単結晶半導体を利用した人工光合成技術開発

    (not selected)  

    Project Year: 2010.04

  • アナログ集積回路による低消費電力、高速信号処理

    (not selected)  

    Project Year: 2003.03 - 2017.03

  • 電気化学法による半導体の加工

    (not selected)  

    Project Year: 2000.03

  • ワイドギャップ半導体の電気的評価と評価技術の開発

    (not selected)  

    Project Year: 1997.04

Papers

  • Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate Reviewed International journal

    Masashi Kato, Ohga Watanabe, Shunta Harada, Hitoshi Sakane

    Materials Science in Semiconductor Processing   175   108264-1 - 108264-5   2024.02

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2024.108264

    DOI: 10.1016/j.mssp.2024.108264

  • Mitigation of carrier trapping effects on carrier lifetime measurements with continuous-wave laser illumination for Pb-based metal halide perovskite materials Reviewed International coauthorship International journal

    Ntumba Lobo, Gebhard J. Matt, Andres Osvet, Shreetu Shrestha, Andrii Kanak, Petro Fochuk, Christoph J. Brabec, Masashi Kato

    Journal of Applied Physics   135   074905-1 - 074905-7   2024.02

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0181654

    DOI: 10.1063/5.0181654

  • Effect of dislocations on carrier recombination and photoelectrochemical activity in polished and unpolished TiO2 and SrTiO3 crystals Reviewed International journal

    Endong Zhang, Mingxin Zhang, Masashi Kato

    Journal of Applied Physics   135   045102-1 - 045102-9   2024.01

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1063/5.0181625

    DOI: https://doi.org/10.1063/5.0181625

  • Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective Reviewed International journal

    Masashi Kato, Shunta Harada, Hitoshi Sakane

    Japanese Journal of Applied Physics   63   020804-1 - 020804-6   2024.01

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  • Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions Reviewed International journal

    Kazuhiro Tanaka, Masashi Kato

    Japanese Journal of Applied Physics   63   011002-1 - 011002-5   2024.01

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ad160c

    DOI: 10.35848/1347-4065/ad160c

  • Unravelling material properties of halide perovskites by combined microwave photoconductivity and time-resolved photoluminescence spectroscopy Reviewed International coauthorship International journal

    Journal of Materials Chemistry C   2023.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/d3tc03867j

  • Surface recombination velocities for 4H–SiC: Dependence of excited carrier concentration and surface passivation Reviewed International journal

    Masashi Kato, Ayato Ogawa, Lei Han, Tomohisa Kato

    Materials Science in Semiconductor Processing   170   107980-1 - 107980-5   2023.11

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2023.107980

    DOI: 10.1016/j.mssp.2023.107980

  • Analysis of carrier recombination coefficients of 3C-and 6H-SiC: Insights into recombination mechanisms in stacking faults of 4H-SiC Reviewed International journal

    Kazuhiro Tanaka, Masashi Kato

    AIP Advances   13   085220   2023.08

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0157696

  • Development of an angle detection system for channeling implantation to the c-axis of SiC using birefringence phenomenon Reviewed International journal

    Masashi Kato, Takumi Maruhashi, Hisaya Sato, Yoshiyuki Yonezawa

    62   068003-1 - 068003-3   2023.06

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/acdcd8

  • Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation Reviewed International journal

    Shunta Harada, Hitoshi Sakane, Toshiki Mii, Masashi Kato

    Applied Physics Express   16   021001-1 - 021001-4   2023.02

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    Authorship:Last author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/acb585

    DOI: 10.35848/1882-0786/acb585

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Books and Other Publications

  • 次世代パワー半導体の開発・評価と実用化

    監修者 岩室 憲幸( Role: Contributor ,  第1編 第1章 第3節)

    (株)エヌ・ティー・エス  2022.02 

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    Total pages:414   Responsible for pages:31-38   Language:jpn   Book type:General book, introductory book for general audience

  • 薄膜の評価技術ハンドブック

    加藤 正史( Role: Joint editor ,  第2章第4節第4項 DLTS法)

    株式会社テクノシステム  2013.01 

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    Language:jpn   Book type:Scholarly book

  • SiCパワーデバイスの開発と最新動向 -普及に向けたデバイスプロセスと実装技術-

    加藤正史( Role: Sole author ,  第3章第4節 陽極酸化欠陥抑制法によるn型4H-SiCのショットキーダイオードの整流特性改善)

    S&T出版  2012.10  ( ISBN:978-4-907002-06-0

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    Language:jpn   Book type:Scholarly book

  • SiCパワーデバイス最新技術 =次世代パワーエレクトロニクス=

    加藤 正史( Role: Sole author ,  第12章.SiCへの金属電極の形成方法)

    サイエンス&テクノロジー株式会社  2010.05  ( ISBN:9784903413846

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    Language:jpn   Book type:Scholarly book

Misc

  • パワーデバイス材料SiC の表面再結合速度を数値化

    加藤 正史

    55 ( 9 )   699 - 699   2020.09

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    Authorship:Lead author   Language:Japanese   Publishing type:Book review, literature introduction, etc.  

    Other Link: http://www.ceramic.or.jp/ihensyub/topics/topics2020.9.pdf

  • 高耐性セラミックスSiCの新たな応用可能性:人工光合成 Invited

    加藤 正史

    54 ( 1 )   36 - 39   2019.01

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)   Publisher:日本セラミックス協会  

  • 人はなぜ研究者を続けることができるか

    加藤 正史

    86 ( 6 )   505 - 506   2017.06

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    Authorship:Lead author   Language:Japanese  

  • SiC光陰極による人工光合成

    加藤 正史

    62 ( 1 )   19 - 23   2017.01

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Publisher:化学工業社  

  • 半導体を用いた水素生成技術

    加藤 正史

    85 ( 2 )   100 - 104   2016.02

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (international conference proceedings)   Publisher:公益社団法人 応用物理学会  

  • ハウリングを高速応答のアナログ回路で除去

    加藤正史、久保真奈美、谷口淳紀、ナラサンビ アヌスヤ

    65 - 71   2014.10

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Publisher:日経BP社  

  • 世界初!「SiCと水から水素を製造!」

    加藤正史

    ( 2月 )   64 - 66   2014.02

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Publisher:技術情報協会  

  • シリコンカーバイドの太陽光吸収を利用した水素生成

    加藤 正史

    58 ( 10 )   7 - 11   2013.10

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Publisher:化学工業社  

Presentations

  • 高濃度Alドープ4H-SiCにおけるキャリア再結合

    加藤 正史、田中 和裕

    2024年第71回応用物理学会春季学術講演会  2024.03 

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    Event date: 2024.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • エピタキシャル成長前SiC基板へのH+注入効果

    加藤 正史、渡邉 王雅、原田 俊太、坂根 仁

    2024年第71回応用物理学会春季学術講演会  2024.03 

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    Event date: 2024.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • 4H-SiCへのプラズマ処理による水素導入

    リ トウ、坂根 仁、原田 俊太、黒川 康良、加藤 正史

    2024年第71回応用物理学会春季学術講演会  2024.03 

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    Event date: 2024.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • CeO2単結晶中のキャリア再結合を支配する欠陥の分析 International coauthorship

    Zhang Endong、Brabec Christoph、加藤 正史

    2024年第71回応用物理学会春季学術講演会  2024.03 

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    Event date: 2024.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • HVPE基板およびOVPE基板上GaNエピ層の特性評価

    古橋 優1、石井 達也、宇佐美 茂佳、森 勇介、渡邉 浩崇、新田 州吾、本田 善央、天野 浩、加藤 正史

    2024年第71回応用物理学会春季学術講演会  2024.03 

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    Event date: 2024.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • 4H-SiC自立エピ層に対する全方位フォトルミネッセンス評価

    牧野 隼宜、鈴木 健吾、加藤 正史

    2024年第71回応用物理学会春季学術講演会  2024.03 

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    Event date: 2024.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • 人工光合成 -太陽光から燃料を作る夢の技術- Invited

    加藤 正史

    なごや環境大学 共育講座 ごきそテクノカフェ ~技術者と共に人類と地球の未来~  2023.12  名古屋市

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    Event date: 2023.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン  

  • Evaluation of omnidirectional photoluminescence and carrier lifetime of 4H-SiC freestanding epilayers

    2023.11 

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    Event date: 2023.11 - 2023.12

    Language:Japanese   Presentation type:Poster presentation  

  • Effects of H+ implantation into SiC substrates before epi growth on PiN diodes

    2023.12 

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    Event date: 2023.11 - 2023.12

    Language:Japanese   Presentation type:Poster presentation  

  • Optical and electrical characterization on GaN epilayers on HVPE and OVPE substrates

    2023.12 

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    Event date: 2023.11 - 2023.12

    Language:Japanese   Presentation type:Poster presentation  

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Industrial Property Rights

  • 前庭刺激装置、めまい治療装置、健康促進装置

    加藤 昌志、大神 信孝、曾根 三千彦、杉本 賢文、加藤 正史

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    Application no:特願2018-104637  Date applied:2018.05

    Patent/Registration no:19230941  Date registered:2021.07  Date issued:2021.07

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 高変換効率SiC光電極およびそれを用いた水素製造装置

    加藤正史、市川尚澄

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    Application no:特願2016-033015  Date applied:2016.02

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 高変換効率SiC光電極およびそれを用いた水素製造装置

    加藤 正史,長谷川 貴大,市川 尚澄

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    Application no:特願2015-076647  Date applied:2015.04

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 高変換効率SiC光電極およびそれを用いた水素製造装置

    加藤 正史、長谷川 貴大、市川 尚澄

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    Application no:特願2015-014184  Date applied:2015.01

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 高変換効率SiC光電極

    加藤 正史、長谷川 貴大、市川 尚澄

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    Application no:2014-227634  Date applied:2014.11

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 界面抵抗を低減したSiC光電極およびその製造方法、ならびにSiC光電極を用いた水素製造装置

    加藤 正史, 長谷川 貴大

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    Application no:2014-015515  Date applied:2014.01

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 半導体キャリアライフタイム測定方法

    加藤 正史,森 祐人

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    Application no:2013-165683  Date applied:2013.08

    Country of applicant:Domestic   Country of acquisition:Domestic

  • ハウリング低減システム及びそれに用いられるアナログ電子回路

    加藤正史、久保真奈美

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    Application no:特願2013-051477  Date applied:2013.03

    Country of applicant:Domestic   Country of acquisition:Domestic

  • ハウリング低減システム及びそれに用いられるアナログ電子回路

    加藤 正史,久保 真奈美,谷口 淳紀

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    Application no:特願2013-051488  Date applied:2013.03

    Country of applicant:Domestic   Country of acquisition:Domestic

  • ハウリング低減システム及びそれに用いられるアナログ電子回路

    加藤正史、久保真奈美、谷口 淳紀

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    Application no:特願2013-051469  Date applied:2013.03

    Country of applicant:Domestic   Country of acquisition:Domestic

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Awards

  • 永井技術賞

    2021.03   永井科学技術財団   SiC単結晶内の電気伝導キャリアの評価および制御技術開発

    加藤正史

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

  • Japanese Journal of Applied Physics: 2020 Reviewer Awards

    2021   IOP Publishing  

    Masashi Kato

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    Award type:Honored in official journal of a scientific society, scientific journal  Country:Japan

  • the Award for Encouragement of Research in IUMRS-ICA2014

    2014.10   MRS-J  

    Masashi Kato

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    Award type:Award from international society, conference, symposium, etc.  Country:Japan

  • 文部科学大臣表彰科学技術賞(理解増進部門)

    2014.04   文部科学省  

    平田晃正、丸田章博、加藤正史、江龍修

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    Country:Japan

  • 安藤博記念学術奨励賞

    2010.06   財団法人安藤研究所  

    加藤正史

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

  • 電子情報通信学会学生研究奨励賞

    2003.06   -  

    -

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    Country:Japan

  • Best Paper Award

    2003.02   The Indian Science Congress Association, Chennai Chapter  

    Masashi Kato, Masaya Ichimura, Eisuke Arai

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    Award type:Award from international society, conference, symposium, etc.  Country:India

 

Committee Memberships

  • 公益社団法人応用物理学会   代議員  

    2024.03 - 2025.02   

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    Committee type:Academic society

  • ICSCRM2024   Technical Program Committee  

    2024.01 - 2024.12   

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    Committee type:Academic society

  • SSDM2024   Technical Program Committee: Area4 Vice-chair  

    2024.01 - 2024.12   

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    Committee type:Academic society

  • 24th International Conference on Ion Implantation Technology 2024   Technical Program Committee Member  

    2023.10 - 2024.09   

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    Committee type:Academic society

  •   APSPT-13/ISPlasma 2024/IC-PLANTS2024 programming committee  

    2023.06 - 2024.05   

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    Committee type:Academic society

  • 応用物理学会   応用物理学会 2023年国際固体素子・材料コンファレンス実行委員  

    2022.08 - 2023.09   

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    Committee type:Academic society

  • 応用物理学会   先進パワー半導体分科会第9回講演会プログラム委員長  

    2022.01 - 2022.12   

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    Committee type:Academic society

  • 戦略的基盤技術高度化支援事業にかかる「研究開発推進委員会」   アドバイザー  

    2019.09 - 2023.03   

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    Committee type:Municipal

  • 応用物理学会   ISPlasma2019/IC-PLANTS2019プログラム委員  

    2018.04 - 2019.03   

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    Committee type:Academic society

  • 応用物理学会   学術講演会プログラム委員  

    2017.04   

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    Committee type:Academic society

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