Presentations -

Division display  21 - 40 of about 76 /  All the affair displays >>
  • MOVPE Growth and Characterization of Iodine-Doped n-CdTe Layers on (211)Si Substrates Grown at High Substrate Temperatures International conference

    M. Niraula, K. Yasuda, T. Mori, B. S. Chaudhari, R. Tamura, Y. Higashira, R. Torii, and Y. Agata

    IEEE 2018- 25th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors  IEEE Nuclear and Plasma Science Society

     More details

    Event date: 2018.11

    Language:English   Presentation type:Poster presentation  

    Venue:Sydney, Australia  

  • Advances in the Crystal Growth and Device Fabrication Techniques of Thick CdTe/Si Epitaxial Layers based Nuclear Radiation Detectors Invited International conference

    M. Niraula, K. Yasuda, T. Mori, R. Torii, R. Tamura, Y. Higashira, and Y. Agata

    IEEE 2018- 25th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors  IEEE Nuclear and Plasma Science Society

     More details

    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Sydney, Australia  

  • Study of MOVPE growth to improve thickness uniformity of CdTe epilayers on Si substrate

    The 79th JSAP Autumn Meeting, 2018   JSAP

     More details

    Event date: 2018.09

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:Nagoya Congress Center  

  • Development of X-ray Imaging Sensors Based on Epitaxially Grown Thick CdTe Layers on Si Substrates International conference

    M. Niraula, K. Yasuda, S. Tsubota, T. Yamaguchi, J. Ozawa, T. Mori, and Y. Agata

    2018年第79回応用物理学会学秋季学術講演会  公益社団法人 応用物理学会

     More details

    Event date: 2018.09

    Language:English   Presentation type:Oral presentation (general)  

    Venue:名古屋国際会議場  

  • Reform of laboratory courses to develop students possessing knowledge in both electrical and mechanical engineering

    2018 JSEE Annual Conference  JSEE

     More details

    Event date: 2018.08

    Language:Japanese   Presentation type:Oral presentation (general)  

  • MOVPE法による(211)CdTe/Si成長層のアニール処理の検討

    森拓郎、小澤潤也、坪田眞太郎、山口大貴、安形保則、ニラウラ・マダン、安田和人

    2018年 第65回応用物理学会春季学術講演会  応用物理学会

     More details

    Event date: 2018.03

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:早稲田大学、西早稲田キャンパス  

  • Development of Fine-Pixel X-ray Imaging Arrays using CdTe/n+-Si Epitaxial Layers Invited International conference

    M. Niraula, K. Yasuda, S. Tsubota, T. Yamaguchi, J. Ozawa, T. Mori, Y. Agata

    IEEE 2017- 24th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors  IEEE Nuclear and Plasma Science Society

     More details

    Event date: 2017.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Atlanta, USA  

  • Post Growth Annealing of MOVPE-Grown Single Crystal CdTe Epilayers on (211) Si Substrates International conference

    M. Niraula, K. Yasuda, J. Ozawa , T. Yamaguchi, S. Tsubota, T. Mori, and Y. Agata

    IEEE 2017- 24th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors  IEEE Nuclear and Plasma Science Society

     More details

    Event date: 2017.10

    Language:English   Presentation type:Poster presentation  

    Venue:Atlanta, USA  

  • Investigation of growth orientation of CdTe crystals grown on (211)Si layers by MOVPE

    The 64th JSAP Spring Meeting  The Japan Society of Applied Physics

     More details

    Event date: 2017.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • Fabrication of large area imaging array using MOVPE grown CdTe layers on (211) Si Substrates

    The 64th JSAP Spring Meeting  The Japan Society of Applied Physics

     More details

    Event date: 2017.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • Surface Processing of CdTe Crystals in H2 /Ar ECR Plasma

    The 64th JSAP Spring Meeting  The Japan Society of Applied Physics

     More details

    Event date: 2017.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • Surface Processing of CdTe Crystals in H2/Ar Electron Cyclotron Resonance Plasma International conference

    M. Niraula, K. Yasuda, 他

    IEEE- The 23rd International Symposium on Room-Temperature Semiconductor Detectors (RTSD)  IEEE Nuclear and Plasma Science Society

     More details

    Event date: 2016.10 - 2016.11

    Language:English   Presentation type:Poster presentation  

    Venue:Strasbourg, France  

  • Recent Progress in CdTe/n+-Si Epitaxial Layer Based Heterojunction Diode-Type Gamma Detectors Invited International conference

    M. Niraula, K. Yasuda, 他

    IEEE- The 23rd International Symposium on Room-Temperature Semiconductor Detectors (RTSD)  IEEE Nuclear and Plasma Science Society

     More details

    Event date: 2016.10 - 2016.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Strasbourg, France  

  • Dry Etching Characteristics of MOVPE Grown CdTe Epilayers in CH4, H2, Ar ECR Plasmas International conference

    K. Yasuda, M. Niraula,他

    The 2016 US Workshop on the Physics and Chemistry of II-VI Materials  The American Physical Society

     More details

    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Baltimore, USA  

  • Characterization of (211) and (100) CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy International conference

    K. Yasuda, M. Niraula,他

    The 2016 US Workshop on the Physics and Chemistry of II-VI Materials  The American Physical Society

     More details

    Event date: 2016.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Baltimore, USA  

  • Photoluminescence of CdTe layers grown on (211) Si substrates by MOVPE

    M. Kojima, K. Yasuda, M. Niraula, others

    The 77th JSAP Autumn Meeting, 2016   The Japan Society of Applied Physics

     More details

    Event date: 2016.09

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:Nigata  

  • Etch pit evaluation of (211) CdTe/Si layers grown by MOVPE

     More details

    Event date: 2016.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • Photo-luminescence of As-doped CdTe layers grown on (211) Si substrates by MOVPE

     More details

    Event date: 2016.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • Photo-luminescence of CdTe grown layer on (211) and (100) Si substrate by MOVPE

     More details

    Event date: 2016.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • Study of CdTe Surface Processed with Hydrogen Bromide Based Etching Solution International conference

    M. Niraula, K. Yasuda, Y. Ito, D. Yamazaki, S. Sugimoto, S. Kouno, S. Kitagawa, M. Kojima, and Y. Agata

    IEEE 2015- 22nd International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors (RTSD)  

     More details

    Event date: 2015.11

    Language:English   Presentation type:Poster presentation  

To the head of this page.▲