Presentations -
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Growth studies of conductive SnO2 films for their application in SnO2/CdTe diode-type gamma ray detectors International conference
Ko Misato, Masaya Ichimura and Madan Niraula
The International Conference on Materials, Energy, and Environments (ICMEE '24) 2024.09 Discovery Conference, USA (Virtual conference)
Event date： 2024.09
Language：English Presentation type：Poster presentation
Venue：Virtual Confernce , USA time zone Country：United States
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Dislocation density reduction in epitaxial CdTe/Si through annealing and its effect on the performance of gamma ray detectors fabricated Invited International conference
Madan Niraula, Bal Singh Chaudhari, Ryo Okumura, Ikuei Torimoto
The International Conference on Materials, Energy, and Environments (ICMEE '24) 2024.09 Discovery Conference, USA (Virtual conference)
Event date： 2024.09
Language：English Presentation type：Oral presentation (invited, special)
Venue：Virtual Confernce , USA time zone Country：United States
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Properties of SnO₂ films grown by low temperature solution process
2024.09
Event date： 2024.09
Language：Japanese Presentation type：Oral presentation (general)
Country：Japan
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Enhancement of hole density in arsenic-doped CdTe growth layers by annealing treatment
Madan Niraula, Ryo Okumura, Yutaka Takagi
2024.03
Event date： 2024.03
Language：Japanese Presentation type：Oral presentation (general)
Country：Japan
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Growth and characterization of space confined lead halide perovskite single crystal
Madan Niraula, Ryo Okumura, Yutaka Takagi
The 12th International Symposium on Materials Science and Surface Technology 2023 (MSST 2023) 2024.03 Materials and Surface Engineering Research Institute, Kanto Gaguin University
Event date： 2024.03
Language：Japanese Presentation type：Oral presentation (general)
Venue： Kannai Campus, Yokohama Country：Japan
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Developments in CdTe semiconductor detector materials for large-area X-ray gamma ray imaging Invited International conference
Madan Niraula, Ryo Okumura, Yutaka Takagi
The 12th International Symposium on Materials Science and Surface Technology 2023 (MSST 2023) 2023.10 Materials and Surface Engineering Research Institute, Kanto Gaguin University
Event date： 2023.10
Language：English Presentation type：Oral presentation (invited, special)
Venue： Kannai Campus, Yokohama Country：Japan
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Study of dislocations distribution in (211) CdTe/ Si epitaxial layer and their reduction methods International conference
Bal Singh Chaudhari, Yutaka Takagi, Ryo Okumura, Madan Niraula
International Conference on Thin Films and Nanotechnology-Knowledge, Leadership and Commercialization 2023.07 Indian Institute of Technology Madras, India
Event date： 2023.07
Language：English Presentation type：Oral presentation (general)
Venue：IIT Madras, Chennai Country：India
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Growth of large-area lead halide perovskite single crystals for radiation detectors
2022.09
Event date： 2022.09
Language：Japanese Presentation type：Oral presentation (general)
Country：Japan
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Investigation on threading dislocation reduction in CdTe/Si epitaxial layer using post-growth patterning and annealing technique
Bal Singh Chaudhari, Yutaka Takagi, Ryo Okumura, Madan Niraula
2022.09
Event date： 2022.09
Language：English Presentation type：Oral presentation (general)
Country：Japan
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Growth and Characterization of Large Single-Crystal Lead Halide Perovskites for X-ray Detector Development International conference
M. Niraula, Y. Nakashima, Y. Takagi, R. Okumura, and K. Yasuda
European MRS Spring Meeting 2022, France Virtual Conference 2022.06 European Material Research Society
Event date： 2022.05 - 2022.06
Language：English Presentation type：Poster presentation
Venue：online Country：France
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Growth and characterization of single-crystal lead halide perovskite for X-ray detector application International conference
MM. Islam, M. Niraula, Y. Nakashima, T. Matsubara, S. Hirano, Y. Takagi, and K. Yasuda
IEEE-2021 The 28th International Symposium on Room-Temperature Semiconductor Detectors (RTSD) IEEE Nuclear and Plasma Science Society
Event date： 2021.10
Language：English Presentation type：Poster presentation
Venue：Virtual Conference (Yokohama, Japan) (New York USA timezone)
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Low Temperature Annealing of CdTe Detectors with Evaporated Gold Contacts and its effect on Detector Performance International conference
M. Niraula, K. Yasuda, Y. Takagi, and S. Fuji
IEEE-2021 The 28th International Symposium on Room-Temperature Semiconductor Detectors (RTSD) IEEE Nuclear and Plasma Science Society
Event date： 2021.10
Language：English Presentation type：Poster presentation
Venue：Virtual Conference (Yokohama, Japan) (New York USA timezone)
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Perovskite Single Crystal Growth for for X-ray Detector Application
MM. Islam, Y. Nakashima, T. Matsubara, S. Hirano, Y. Takagi, M. Niraula, K. Yasuda
Event date： 2021.09
Language：English Presentation type：Oral presentation (general)
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Evaluation of dislocation densities and their distribution in epitaxial (211)CdTe/Si
Bal Singh Chaudhari, Hayata Goto, Madan Niraula, Kazuhito Yasuda
Event date： 2021.03
Language：English Presentation type：Oral presentation (general)
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MOVPE法によるn+-(211)Si上のCdTe成長層の成長室内アニール処理検討
松原敏樹, 小林竜大, 後藤颯汰, 藤井成弥, 中島幸寛, 平野颯涼, ニラウラ マダン, 安田和人
2021年 第68回応用物理学会 春季学術講演会 応用物理学会
Event date： 2021.03
Language：Japanese Presentation type：Oral presentation (general)
Venue：オンライン開催
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Epitaxial CdTe on Si Heterojunction Diode-Type Detector Performance and Analysis International conference
M. Niraula, K. Yasuda, B. S. Chaudhari, H. Goto, T. Kobayashi, S. Fujii
IEEE-2020 The 27th International Symposium on Room-Temperature Semiconductor Detectors (RTSD) IEEE Nuclear and Plasma Science Society
Event date： 2020.10 - 2020.11
Language：English Presentation type：Poster presentation
Venue：Virtual Conference (Boston, USA timezone)
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In-situ annealing of MOVPE grown CdTe layers on Si substrate
S. Fuji, R. Tamura, R. Torii, Y. Higashira, T. Kobayashi, H. Goto, Y. Agata, M. Niraula, K. Yasuda
The 67th JSAP Spring Meeting 2020 JSAP
Event date： 2020.03
Language：Japanese Presentation type：Oral presentation (general)
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Properties of iodine-doped CdTe layers on (211) Si grown at high substrate temperatures by MOVPE International conference
M. Niraula, K. Yasuda, R. Torii, Y. Higashira, R. Tamura, B. S. Chaudhari, T. Kobayashi, H. Goto, S. Fujii, and Y. Agata
The 2019 U.S. Workshop on the Physics and Chemistry of II-VI Materials American Physical Society
Event date： 2019.11
Language：English Presentation type：Oral presentation (general)
Venue：Chicago, USA
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MOVPE growth of thick n-CdTe layers with high electron density grown on (211)Si substrate [II]
The 66th JSAP Spring Meeting, 2019 The Japan Society of Applied Physics
Event date： 2019.03
Language：Japanese Presentation type：Oral presentation (general)
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MOVPE growth of thick n-CdTe layers with high electron density grown on (211)Si substrate [Ⅰ]
The 66th JSAP Spring Meeting, 2019 The Japan Society of Applied Physics
Event date： 2019.03
Language：Japanese Presentation type：Oral presentation (general)
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MOVPE Growth and Characterization of Iodine-Doped n-CdTe Layers on (211)Si Substrates Grown at High Substrate Temperatures International conference
M. Niraula, K. Yasuda, T. Mori, B. S. Chaudhari, R. Tamura, Y. Higashira, R. Torii, and Y. Agata
IEEE 2018- 25th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors IEEE Nuclear and Plasma Science Society
Event date： 2018.11
Language：English Presentation type：Poster presentation
Venue：Sydney, Australia
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Advances in the Crystal Growth and Device Fabrication Techniques of Thick CdTe/Si Epitaxial Layers based Nuclear Radiation Detectors Invited International conference
M. Niraula, K. Yasuda, T. Mori, R. Torii, R. Tamura, Y. Higashira, and Y. Agata
IEEE 2018- 25th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors IEEE Nuclear and Plasma Science Society
Event date： 2018.11
Language：English Presentation type：Oral presentation (invited, special)
Venue：Sydney, Australia
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Study of MOVPE growth to improve thickness uniformity of CdTe epilayers on Si substrate
The 79th JSAP Autumn Meeting, 2018 JSAP
Event date： 2018.09
Language：Japanese Presentation type：Oral presentation (general)
Venue：Nagoya Congress Center
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Development of X-ray Imaging Sensors Based on Epitaxially Grown Thick CdTe Layers on Si Substrates International conference
M. Niraula, K. Yasuda, S. Tsubota, T. Yamaguchi, J. Ozawa, T. Mori, and Y. Agata
2018年第79回応用物理学会学秋季学術講演会 公益社団法人 応用物理学会
Event date： 2018.09
Language：English Presentation type：Oral presentation (general)
Venue：名古屋国際会議場
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Reform of laboratory courses to develop students possessing knowledge in both electrical and mechanical engineering
2018 JSEE Annual Conference JSEE
Event date： 2018.08
Language：Japanese Presentation type：Oral presentation (general)
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MOVPE法による(211)CdTe/Si成長層のアニール処理の検討
森拓郎、小澤潤也、坪田眞太郎、山口大貴、安形保則、ニラウラ・マダン、安田和人
2018年 第65回応用物理学会春季学術講演会 応用物理学会
Event date： 2018.03
Language：Japanese Presentation type：Oral presentation (general)
Venue：早稲田大学、西早稲田キャンパス
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Development of Fine-Pixel X-ray Imaging Arrays using CdTe/n+-Si Epitaxial Layers Invited International conference
M. Niraula, K. Yasuda, S. Tsubota, T. Yamaguchi, J. Ozawa, T. Mori, Y. Agata
IEEE 2017- 24th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors IEEE Nuclear and Plasma Science Society
Event date： 2017.10
Language：English Presentation type：Oral presentation (invited, special)
Venue：Atlanta, USA
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Post Growth Annealing of MOVPE-Grown Single Crystal CdTe Epilayers on (211) Si Substrates International conference
M. Niraula, K. Yasuda, J. Ozawa , T. Yamaguchi, S. Tsubota, T. Mori, and Y. Agata
IEEE 2017- 24th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors IEEE Nuclear and Plasma Science Society
Event date： 2017.10
Language：English Presentation type：Poster presentation
Venue：Atlanta, USA
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Investigation of growth orientation of CdTe crystals grown on (211)Si layers by MOVPE
The 64th JSAP Spring Meeting The Japan Society of Applied Physics
Event date： 2017.03
Language：Japanese Presentation type：Oral presentation (general)
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Fabrication of large area imaging array using MOVPE grown CdTe layers on (211) Si Substrates
The 64th JSAP Spring Meeting The Japan Society of Applied Physics
Event date： 2017.03
Language：Japanese Presentation type：Oral presentation (general)
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Surface Processing of CdTe Crystals in H2 /Ar ECR Plasma
The 64th JSAP Spring Meeting The Japan Society of Applied Physics
Event date： 2017.03
Language：Japanese Presentation type：Oral presentation (general)
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Surface Processing of CdTe Crystals in H2/Ar Electron Cyclotron Resonance Plasma International conference
M. Niraula, K. Yasuda, 他
IEEE- The 23rd International Symposium on Room-Temperature Semiconductor Detectors (RTSD) IEEE Nuclear and Plasma Science Society
Event date： 2016.10 - 2016.11
Language：English Presentation type：Poster presentation
Venue：Strasbourg, France
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Recent Progress in CdTe/n+-Si Epitaxial Layer Based Heterojunction Diode-Type Gamma Detectors Invited International conference
M. Niraula, K. Yasuda, 他
IEEE- The 23rd International Symposium on Room-Temperature Semiconductor Detectors (RTSD) IEEE Nuclear and Plasma Science Society
Event date： 2016.10 - 2016.11
Language：English Presentation type：Oral presentation (invited, special)
Venue：Strasbourg, France
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Dry Etching Characteristics of MOVPE Grown CdTe Epilayers in CH4, H2, Ar ECR Plasmas International conference
K. Yasuda, M. Niraula,他
The 2016 US Workshop on the Physics and Chemistry of II-VI Materials The American Physical Society
Event date： 2016.10
Language：English Presentation type：Oral presentation (general)
Venue：Baltimore, USA
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Characterization of (211) and (100) CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy International conference
K. Yasuda, M. Niraula,他
The 2016 US Workshop on the Physics and Chemistry of II-VI Materials The American Physical Society
Event date： 2016.10
Language：English Presentation type：Oral presentation (general)
Venue：Baltimore, USA
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Photoluminescence of CdTe layers grown on (211) Si substrates by MOVPE
M. Kojima, K. Yasuda, M. Niraula, others
The 77th JSAP Autumn Meeting, 2016 The Japan Society of Applied Physics
Event date： 2016.09
Language：Japanese Presentation type：Oral presentation (general)
Venue：Nigata
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Etch pit evaluation of (211) CdTe/Si layers grown by MOVPE
Event date： 2016.03
Language：Japanese Presentation type：Oral presentation (general)
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Photo-luminescence of As-doped CdTe layers grown on (211) Si substrates by MOVPE
Event date： 2016.03
Language：Japanese Presentation type：Oral presentation (general)
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Photo-luminescence of CdTe grown layer on (211) and (100) Si substrate by MOVPE
Event date： 2016.03
Language：Japanese Presentation type：Oral presentation (general)
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Study of CdTe Surface Processed with Hydrogen Bromide Based Etching Solution International conference
M. Niraula, K. Yasuda, Y. Ito, D. Yamazaki, S. Sugimoto, S. Kouno, S. Kitagawa, M. Kojima, and Y. Agata
IEEE 2015- 22nd International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors (RTSD)
Event date： 2015.11
Language：English Presentation type：Poster presentation
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Characterization of Large-Area Spectroscopic Imaging Array Fabricated Using Epitaxially Grown Thick Single Crystal CdTe Layer on Si Substrate International conference
M. Niraula, K. Yasuda, S. Kouno, S. Sugimoto, Y. Ito, D. Yamazaki, M. Kojima, S. Kitagawa, and Y. Agata
IEEE 2015- 22nd International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors (RTSD)
Event date： 2015.11
Language：English Presentation type：Oral presentation (general)
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Study of surface processing of CdTe detectors using hydrogen bromide based etching solution
S. Kono, Y. Suzuki, N. Takai, Y. Tsukamoto, M. Matsumoto, Y. Ito, S.Sugimoto, D. Yamazaki, S. Kitagawa, M. Kojima, Y. Agata, M. Niraula, and K. Yasuda
The 62nd JSAP Spring Meeting,2015
Event date： 2015.03
Language：Japanese Presentation type：Oral presentation (general)
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Charge Transport Properties of p-CdTe/n-CdTe/n+-Si Diode
M. Matsumoto, Y. Suzuki, N. Takai, Y. Tsukamoto, Y. Ito, S. Sugimoto, S. Kono, D. Yamazaki, Y. Agata, M. Niraula, K. Yasuda
The 75th JSAP Autumn Meeting, 2014
Event date： 2014.09
Language：Japanese Presentation type：Oral presentation (general)
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MOVPE法によるCdTe/Si厚膜層を用いたエネルギー識別能力を持つ X線・γ線画像検出器の開発 (III) 〜p+-Si 基板上のCdTe層を用いた検出器の特性〜
高井紀明、山下隼、和嶋悠人、 鈴木悠太、塚本雄大、塚本祐生、 松本雅彦、伊藤祐葵、神野悟史、杉本宗一郎、山崎大輔、 安形保則、 ニラウラ マダン、安田和人
2014年 第61回応用物理学会春季学術講演会 公益社団法人 応用物理学会
Event date： 2014.03
Language：Japanese Presentation type：Oral presentation (general)
Venue：青山学院大学相模原キャンパス
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Development of Large-Area Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrates International conference
M. Niraula, K. Yasuda, H. Yamashita, Y. Wajima, M. Matsumoto, N. Takai, Y. Tsukamoto, Y. Suzuki, Y. Tsukamoto, and Y. Agata
IEEE 2013- 20th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors,
Event date： 2013.10 - 2013.11
Language：English Presentation type：Oral presentation (invited, special)
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Development of nuclear radiation detectors using thick single crystal CdTe layers grown on (211) p+-Si substrates by MOVPE International conference
K. Yasuda, M. Niraula, Y. Wajima, H. Yamashita, N. Takai, Y. Suzuki, M. Matsumoto, Y. Tsukamoto, Y. Tsukamoto , and Y. Agata
The 2013 US Workshop on the Physics and Chemistry of II-VI Materials
Event date： 2013.10
Language：English Presentation type：Oral presentation (general)
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Vapor-Phase Epitaxial Growth of Thick Single Crystal CdTe on Si Substrate for X-Ray, Gamma-Ray Spectroscopic Detector Development International conference
M. Niraula, K. Yasuda, H. Yamashita, Y. Wajima, Y. Tsukamoto, M. Matsumoto, Y. Suzuki, N. Takai, Y. Tsukamoto, and Y. Agata
16th International Conference on II-VI Compounds
Event date： 2013.09
Language：English Presentation type：Oral presentation (general)
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Development of Large-Area Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrates
M. Niraula, K. Yasuda, S. Namba, T. Kondo, S. Muramatsu, H. Yamashita, Y. Wajima, Y. Agata
2013年 第60回応用物理学会春季学術講演会 公益財団法人 応用物理学会
Event date： 2013.03
Language：English Presentation type：Oral presentation (general)
Venue：神奈川工科大学
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MOVPE法による大面積CdTe X線・γ線画像検出器に関する研究(XIII) 〜CdTe/Si成長層高品質大面積化の検討〜
山下隼， 近藤嵩輝，難波秀平, 村松慎也, 和嶋悠人, 鈴木悠太, 高井紀明, 塚本祐生, 塚本雄大, 松本雅彦, 安形保則， ニラウラ マダン，安田和人
2013年 第60回応用物理学会春季学術講演会 公益財団法人 応用物理学会
Event date： 2013.03
Language：Japanese Presentation type：Oral presentation (general)
Venue：神奈川工科大学
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MOVPE法による大面積CdTe X線・γ線画像検出器に関する研究(XIII) 〜CdTe/Si成長層のアニール処理の検討
和嶋悠人, 近藤嵩輝，難波秀平, 村松慎也, 山下隼，鈴木悠太, 高井紀明, 塚本祐生, 塚本雄大, 松本雅彦, 安形保則， ニラウラ マダン，安田和人
2013年 第60回応用物理学会春季学術講演会 公益財団法人 応用物理学会
Event date： 2013.03
Language：Japanese Presentation type：Oral presentation (general)
Venue：神奈川工科大学
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Post-Growth Annealing of CdTe Layers Grown on Si Substrtaes by MOVPE International conference
K. Yasuda, M. Niraula, S. Namba, T. Kondo, S. Muramatsu, H. Yamashita, Y. Wajima, and Y. Agata
The 2012 US Workshop on the Physics and Chemistry of II-VI Materials
Event date： 2012.11
Language：English Presentation type：Oral presentation (general)
Venue：Seattle, USA
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MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrate for Nuclear Radiation Detector Development International conference
M. Niraula, K. Yasuda, S. Namba, S. Muramatsu, T. Knodo, Y. Wajima, H. Yamashita, and Y. Agata
IEEE 2012- 19th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors,
Event date： 2012.10 - 2012.11
Language：English Presentation type：Oral presentation (invited, special)
Venue：Anaheim, California, USA
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MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(XI) 〜CdZnTe層成長と特性評価〜
難波秀平, 近藤嵩輝，村松慎也, 山下 隼，和嶋悠人，安形保則，Madan Niraula，安田和人
2012年秋季 第73回応用物理学会学術講演会 （社団）応用物理学会
Event date： 2012.09
Language：Japanese Presentation type：Oral presentation (general)
Venue：愛媛大学
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MOVPE法によるCdTe/Si厚膜層を用いたエネルギー識別能力を持つX線・γ線画像検出器の開発(II) 〜検出器アレイの放射線検出特性の検討〜
藤村直也、犬塚博章、舘 忠裕、藤村直也、近藤嵩輝、難波秀平、山下 隼、和嶋悠人、安形保則、マダン ニラウラ、安田和
2012年春季第59回応用物理学関係連合講演会 応用物理学会
Event date： 2012.03
Language：Japanese Presentation type：Oral presentation (general)
Venue：早稲田大学
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“MOVPE法によるCdTe/Si厚膜層を用いたエネルギー識別能力を持つX線・γ線画像検出器の開発(I) 検出器アレイの作製
近藤嵩輝，犬塚博章，舘 忠裕，藤村直也，難波秀平，村松慎也，山下 隼，和嶋悠人，安形保則，マダン ニラウラ，安田和人
2012年春季第59回応用物理学関係連合講演会 応用物理学会
Event date： 2012.03
Language：Japanese Presentation type：Oral presentation (general)
Venue：早稲田大学
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“MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(XI) 〜検出器アレイの暗電流特性(II)〜”
舘 忠裕，難波秀平，犬塚博章，藤村直也，近藤高輝，村松慎也，和嶋悠人，山下 隼，安形保則，マダン ニラウラ，安田和人
2012年春季第59回応用物理学関係連合講演会 応用物理学会
Event date： 2012.03
Language：Japanese Presentation type：Oral presentation (general)
Venue：早稲田大学
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MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(XI) 〜検出器アレイの暗電流特性(I)〜
難波秀平，舘 忠祐，犬塚博章，藤村直也，近藤嵩輝，村松慎也，山下 隼，和嶋悠人，安形保則，Madan Niraula，安田和人
2012年春季第59回応用物理学関係連合講演会 応用物理学会
Event date： 2012.03
Language：Japanese Presentation type：Oral presentation (general)
Venue：早稲田大学
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Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrates International conference
1. M. Niraula, K. Yasuda, N. Fujimura, T. Tachi, H. Inuzuka, S. Namba, T. Kondo, S. Muramatsu, and Y. Agata
IEEE 2011- 18th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors
Event date： 2011.10
Language：English Presentation type：Oral presentation (invited, special)
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Dark Current Characteristics of Radiation Detector Array Developed Using MOVPE Grown Thick CdTe Layers on Si Substrate International conference
2. K. Yasuda, M. Niraula, N. Fujimura, T. Tachi, H. Inuzuka, S. Namba, S. Muramatsu, T. Kondo, and Y. Agata
The 2011 US Workshop on the Physics and Chemistry of II-VI Materials
Event date： 2011.10
Language：English Presentation type：Oral presentation (general)
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Fabrication of Radiation Imaging Detector Arrays Using MOVPE Grown Thick Single Crystal CdTe Layers on Si Substrate International conference
3. K. Yasuda, M. Niraula, T. Tachi, N. Fujimura, H. Inuzuka, T. Kondo, S. Namba, S. Muramatsu, and Y. Agata
15th International Conference on II-VI Compounds,
Event date： 2011.08
Language：English Presentation type：Oral presentation (general)
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Development of Radiation Imaging Arrays Using Thick CdTe Layers Grown on Si Substrates by MOVPE
The Institute of Electronics, Information and Communication Engineers
Event date： 2011.05
Language：Japanese Presentation type：Oral presentation (general)
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2. MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(X)～アレイ型検出器の暗電流低減及び高性能化への検討(ＩＩ)～
藤村直也、ニラウラ マダン 他
２０１１年春季第５８回応用物理学関係連合講演会 応用物理学会
Event date： 2011.03
Language：Japanese Presentation type：Oral presentation (general)
Venue：神奈川工科大学
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1. MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究(X)～アレイ型検出器の暗電流低減及び高性能化への検討(I)～
舘忠裕, ニラウラ マダン他
２０１１年春季第５８回応用物理学関係連合講演会 応用物理学会
Event date： 2011.03
Language：Japanese Presentation type：Oral presentation (general)
Venue：神奈川工科大学
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Development of Radiation Imaging Devices with Energy Discrimination Capability using Thick CdTe Layers Grown on Si Substrates by Metal Organic Vapor Phase Epitaxy International conference
K. Yasuda, M. Niraula, and Y. Agata
7th International Conference on Thin Film Physics and Applications
Event date： 2010.09
Language：English Presentation type：Oral presentation (invited, special)
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Hetero-epitaxial Growth and Doping Properties of CdTe Layers by Metalorganic Vapor Phase Epitaxy International conference
K. Yasuda, M. Niraula, and Y. Agata
The 2010 International Symposium on Optoelectronic Materials and Devices
Event date： 2010.07
Language：English Presentation type：Oral presentation (invited, special)
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Electrical properties of halogen-doped CdTe layers on Si substrates grown by metalorganic vapor phase epitaxy International conference
3. K. Yasuda, M. Niraula, H. Oka, T. Yoneyama, H. Nakashima, T. Nakanishi, K. Matsumoto, D. Katou, and Y. Agata,
The 2009 US Workshop on the Physics and Chemistry of II-VI Materials
Event date： 2009.10
Language：English Presentation type：Oral presentation (general)
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MOVPE法による大面積CdTe x線・γ線画像検出器に関する研究（VII）
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２００９年春季第５６回応用物理学関係連合講演会
Event date： 2009.04
Language：Japanese Presentation type：Oral presentation (general)
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MOVPE growth of thick CdTe layers,and application to radiation detectors
The 70th Autumn Meeting, 2009; The Japan Society of Applied Physics
Event date： 2009.04
Language：Japanese Presentation type：Oral presentation (general)
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Electrical properties of halogen-doped CdTe layers on Si substrates grown by metalorganic vapor phase epitaxy International conference
The 2009 US Workshop on the Physics and Chemistry of II-VI Materials
Event date： 2009.04
Language：Japanese Presentation type：Oral presentation (general)
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Development of X-ray, Gamma Ray Spectroscopic Detector Using Epitaxially Grown Single Crystal Thick CdTe Films International conference
4. M. Niraula, K. Yasuda, H. Ichihashi, Y. Kai, A. Watanabe, W. Yamada, H. Oka, T. Yoneyama, K. Matsumoto, T. Nakanishi, D. Katoh, H. Nakashima, and Y. Agata,
Material Research Society Spring Meeting
Event date： 2009.04
Language：English Presentation type：Oral presentation (general)
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Electrical Properties of Halogen-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE International conference
IEEE 2008- 16th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors,
Event date： 2008.04
Language：Japanese Presentation type：Oral presentation (general)
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2. MOVPE法による大面積CdTe x線・γ線画像検出きに関する研究（ＶＩ）、p-CdTe 層ＰＬ特性とエネルギー分解能の関係（ＩＩ）
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２００８年第６９回応用物理学会学術講演会
Event date： 2008.04
Language：Japanese Presentation type：Oral presentation (general)
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MOVPE法による大面積CdTe x線・γ線画像検出きに関する研究（ＶＩ）、p-CdTe 層ＰＬ特性とエネルギー分解能の関係（Ｉ）
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２００８年第６９回応用物理学会学術講演会
Event date： 2008.04
Language：Japanese Presentation type：Oral presentation (general)
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MOVPE Growth of CdTe on Si Substrates for Gamma Ray Detector Fabrication International conference
Symposium on Radiation Measurements and Applications (SORMA WEST 2008)
Event date： 2008.04
Language：Japanese Presentation type：Poster presentation
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Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors International conference
The 2007 US Workshop on the Physics and Chemistry of II-VI Materials
Event date： 2007.04
Language：Japanese Presentation type：Oral presentation (general)
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Characterization of CdTe/n+-Si heterojunction diodes for nuclear radiation imaging detectors International conference
IEEE 2006- 15th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors
Event date： 2006.04
Language：Japanese Presentation type：Oral presentation (general)
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