|
Affiliation Department |
電気・機械工学科 電気電子分野
|
|
Title |
Professor |
|
Contact information |
|
|
Homepage |
|
|
External Link |
|
NIRAULA Madan
|
|
|
Research Areas
-
Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
-
Nanotechnology/Materials / Applied condensed matter physics
-
Nanotechnology/Materials / Applied physical properties
From School
-
バングラデシュ工科大学 工学部 電気電子工学科, 電気電子工学部 Graduated
- 1993.03
Country：Bangladesh
-
トゥリブアン大学、トゥリチャントラカレッジ 理学部 Biology Major Graduated
- 1987.03
Country：Nepal
From Graduate School
-
Shizuoka University Graduate School, Division of Electronic Science and Technology Doctor's Course Completed
- 2000.03
Country：Japan
-
Shizuoka University Graduate School, Division of Engineering Master's Course Completed
- 1997.03
Country：Japan
External Career
-
The Japan Society of Promotion of Science (JSPS) Post-doctoral fellow at Shizuoka University Special researcher of the Japan Society for the Promotion of Science
2000.04 - 2002.03
Country：Japan
-
Brookhaven National Laboratory, USA Department of Nonproliferation and National Security Researcher
2010.08 - 2010.09
Country：United States
Research Career
-
ハロゲン化金属ペロブスカイト半導体結晶作製とX線検出器への応用
Advanced Technology Development Research
Project Year： 2021.10
-
Development of high-energy resolution nuclear radiation imaging detectors based on cadmium telluride
(not selected)
Project Year： 2003.04
-
Development of high efficiency, large area semiconductor nuclear radiation detectors for medical imaging
(not selected)
Project Year： 2002.04
-
Performance enhancement of semiconductor nuclear radiation detectors
(not selected)
Project Year： 2002.04
Papers
-
Correlation of reverse dark current-voltage characteristics and gamma detection properties of a p-CdTe/n-CdTe/n+-Si vertical diode-type radiation detector Reviewed
M. Niraula, I. Torimoto, R. Okumura
Materials Science in Semiconductor Processing 186 109039-1 - 109039-6 2025.02
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
-
Strategies for dislocation density reduction in CdTe epilayers grown directly on (211) Si substrates using MOVPE Reviewed
M. Niraula, B. S. Chaudhari, R. Okumura, Y. Takagi
Journal of Materials Science: Materials in Electronics 35 31(1) - 31(6) 2024.01
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
-
Dislocation reduction in an MOVPE-grown CdTe/Si epilayer by ex-situ annealing and its effect on the performances of gamma ray detectors fabricated Reviewed
B. S. Chaudhari, M. Niraula, R. Okumura, and T. Maruyama
Physica Scripta 99 015931(1) - 015931(7) 2024.01
Authorship：Corresponding author Language：English Publishing type：Research paper (scientific journal)
-
Dislocation Density Reduction in MOVPE-Grown (211)CdTe/Si by Post-Growth Pattering and Annealing Reviewed
B. S. Chaudhari, M. Niraula, Y. Takagi, R. Okumura, K. P. Sharma, T. Maruyama
J. Electronic Materials 52 3431 - 3435 2023.03
Authorship：Corresponding author Publishing type：Research paper (scientific journal)
-
Growth and Characterization of Single-Crystal Lead Halide Perovskites for X-ray Detector Application Reviewed
M. Niraula, MM. Islam; Y. Nakashima; T. Matsubara; S. Hirano; Y. Takagi
IEEE Trans. Nucl. Sci 70 ( 2 ) 173 - 176 2023.02
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
-
Low-Temperature Annealing of CdTe Detectors With Evaporated Gold Contacts and Its Effect on Detector Performance Reviewed
M. Niraula, K. Yasuda, Y. Takagi, and S. Fuji
IEEE Trans. Nucl. Sci. 69 ( 8 ) 1960 - 964 2022.08
Authorship：Lead author, Corresponding author Language：English Publishing type：Research paper (scientific journal)
-
Analysis of dislocations and their correlation with dark currents in CdTe/Si heterojunction diode-type x-ray detectors Reviewed International journal
B. S. Chaudhari, H. Goto, M. Niraula, and K. Yasuda
J. Appl. Phys. 130 055302 -(1 ) - 055302 -(5) 2021.08
Language：English Publishing type：Research paper (scientific journal) Publisher：AIP Publishing
DOI： 10.1063/5.0058504
-
Properties of iodine-doped CdTe layers on (211) Si grown at high substrate temperatures by MOVPE Reviewed International journal
M. Niraula, K. Yasuda, R. Torii, Y. Higashira, R. Tamura, B. S. Chaudhari, T. Kobayashi, H. Goto, S. Fujii, and Y. Agata
Journal of Electronic Materials 49 ( 11 ) 6996 - 6999 2020.11
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal) Publisher：Springer
-
Synchrotron characterization of high-Z, current-mode x-ray detectors Reviewed International journal
Quinn Looker, Michael G. Wood, Antonino Miceli, Madan Niraula, Kazuhito Yasuda, and John L. Porter
Review of Scientific Instruments 91 ( 2 ) 023509-1 - 023509-8 2020.02
Language：English Publishing type：Research paper (scientific journal)
-
Metalorganic Vapor Phase Epitaxy of Thick and Uniform Single Crystal CdTe Epitaxial Layers on (211) Si Substrates for X-ray Imaging Detector Development Reviewed International journal
M. Niraula, K. Yasuda, R. Torii, R. Tamura, Y. Higashira, and Y. Agata
Journal of Electronic Materials 48 ( 12 ) 7680 - 7685 2019.12
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
Misc
-
放射線エネルギーを識別可能な画像検出器の開発
安田 和人, Niraula Madan
23 ( 6 ) 33 - 36 2012.06
Language：Japanese Publishing type：Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media) Publisher：日本工業出版（株）
Presentations
-
Growth studies of conductive SnO2 films for their application in SnO2/CdTe diode-type gamma ray detectors International conference
Ko Misato, Masaya Ichimura and Madan Niraula
The International Conference on Materials, Energy, and Environments (ICMEE '24) 2024.09 Discovery Conference, USA (Virtual conference)
Event date： 2024.09
Language：English Presentation type：Poster presentation
Venue：Virtual Confernce , USA time zone Country：United States
-
Dislocation density reduction in epitaxial CdTe/Si through annealing and its effect on the performance of gamma ray detectors fabricated Invited International conference
Madan Niraula, Bal Singh Chaudhari, Ryo Okumura, Ikuei Torimoto
The International Conference on Materials, Energy, and Environments (ICMEE '24) 2024.09 Discovery Conference, USA (Virtual conference)
Event date： 2024.09
Language：English Presentation type：Oral presentation (invited, special)
Venue：Virtual Confernce , USA time zone Country：United States
-
Properties of SnO₂ films grown by low temperature solution process
2024.09
Event date： 2024.09
Language：Japanese Presentation type：Oral presentation (general)
Country：Japan
-
Enhancement of hole density in arsenic-doped CdTe growth layers by annealing treatment
Madan Niraula, Ryo Okumura, Yutaka Takagi
2024.03
Event date： 2024.03
Language：Japanese Presentation type：Oral presentation (general)
Country：Japan
-
Growth and characterization of space confined lead halide perovskite single crystal
Madan Niraula, Ryo Okumura, Yutaka Takagi
The 12th International Symposium on Materials Science and Surface Technology 2023 (MSST 2023) 2024.03 Materials and Surface Engineering Research Institute, Kanto Gaguin University
Event date： 2024.03
Language：Japanese Presentation type：Oral presentation (general)
Venue： Kannai Campus, Yokohama Country：Japan
-
Developments in CdTe semiconductor detector materials for large-area X-ray gamma ray imaging Invited International conference
Madan Niraula, Ryo Okumura, Yutaka Takagi
The 12th International Symposium on Materials Science and Surface Technology 2023 (MSST 2023) 2023.10 Materials and Surface Engineering Research Institute, Kanto Gaguin University
Event date： 2023.10
Language：English Presentation type：Oral presentation (invited, special)
Venue： Kannai Campus, Yokohama Country：Japan
-
Study of dislocations distribution in (211) CdTe/ Si epitaxial layer and their reduction methods International conference
Bal Singh Chaudhari, Yutaka Takagi, Ryo Okumura, Madan Niraula
International Conference on Thin Films and Nanotechnology-Knowledge, Leadership and Commercialization 2023.07 Indian Institute of Technology Madras, India
Event date： 2023.07
Language：English Presentation type：Oral presentation (general)
Venue：IIT Madras, Chennai Country：India
-
Growth of large-area lead halide perovskite single crystals for radiation detectors
2022.09
Event date： 2022.09
Language：Japanese Presentation type：Oral presentation (general)
Country：Japan
-
Investigation on threading dislocation reduction in CdTe/Si epitaxial layer using post-growth patterning and annealing technique
Bal Singh Chaudhari, Yutaka Takagi, Ryo Okumura, Madan Niraula
2022.09
Event date： 2022.09
Language：English Presentation type：Oral presentation (general)
Country：Japan
-
Growth and Characterization of Large Single-Crystal Lead Halide Perovskites for X-ray Detector Development International conference
M. Niraula, Y. Nakashima, Y. Takagi, R. Okumura, and K. Yasuda
European MRS Spring Meeting 2022, France Virtual Conference 2022.06 European Material Research Society
Event date： 2022.05 - 2022.06
Language：English Presentation type：Poster presentation
Venue：online Country：France
Industrial Property Rights
-
半導体放射線検出器
安田和人,ニラウラマダン
Application no：特願2017-107264 Date applied：2017.05
Country of applicant：Domestic Country of acquisition：Domestic
-
放射線検出器の製造方法
安田和人,ニラウラマダン
Application no：2011-109374 Date applied：2011.05
Country of applicant：Domestic Country of acquisition：Domestic
-
Semiconductor Radiation Detector and Process for Producing the Same
Kazuhito Yasuda, Madan Niraula
Application no：10/580,833 Date applied：2004.11
Patent/Registration no：US 7,355,185 Date registered：2008.04 Date issued：2008.04
Country of applicant：Foreign country Country of acquisition：Foreign country
-
Method for manufacturing a semiconductor radiation detector
YASUDA, Kazuhito; NIRAULA, Madan
Application no：04819480.7 Date applied：2004.11
Patent/Registration no：1691422 Date registered：2011.07 Date issued：2011.07
Country of applicant：Foreign country Country of acquisition：Foreign country
-
Method for manufacturing a semiconductor radiation detector
YASUDA, Kazuhito ; NIRAULA, Madan
Application no：04819480.7 Date applied：2004.11
Patent/Registration no：1691422 Date registered：2011.07 Date issued：2011.07
Country of applicant：Foreign country Country of acquisition：Foreign country
-
Method for manufacturing a semiconductor radiation detector
安田和人,ニラウラマダン
Application no：04819480.7 Date applied：2004.11
Patent/Registration no：1691422 Date registered：2011.07 Date issued：2011.07
Country of applicant：Foreign country Country of acquisition：Foreign country
-
半導体放射線検出器の製造方法
安田 和人、ニラウラ マダン
Application no：2007-276652 Date applied：2003.11
Announcement no：第4107616号 Date announced：2008.04
Country of applicant：Domestic Country of acquisition：Domestic
-
半導体放射線検出器
安田 和人、ニラウラ マダン
Application no：2003-397978 Date applied：2003.11
Announcement no：第4131498号 Date announced：2008.06
Country of applicant：Domestic Country of acquisition：Domestic
Awards
-
The Electrical Science and Engineering Promotion Awards
2012.11
Niraula Madan, Yasuda Kazuhito
Award type：Award from publisher, newspaper, foundation, etc. Country：Japan
-
2004 年東海学術奨励会賞
2004.04 財団法人東海学術奨励会 CdTe 厚膜を用いた医療用高性能大面積放射線画像検出器の開発
ニラウラ マダン
Country：Japan
-
The Spring Meeting of The Japan Society of Applied Physics
2002.04
Award type：Award from Japanese society, conference, symposium, etc. Country：Japan
Scientific Research Funds Acquisition Results
-
Development of highly efficient and stable photon-counting type X-ray detectors using single crystal
2024.04 - 2027.03
Niraula Madan
Authorship：Principal investigator Grant type：Competitive
-
Si基板上のCdTe成長層を用いたX線画像検出器の性能と信頼性向上に関する研究
2020.04 - 2023.03
科学研究費補助金 基盤研究(C)
ニラウラ マダン
-
半導体放射線検出器の高性能化に関する研究
2008.04 - 2011.03
科学研究費補助金 基盤研究(B)
ニラウラ マダン
-
テルル化カドミウムによる高エネルギー分解能放射線画像検出器の開発
2003.04 - 2006.03
科学研究費補助金 若手研究(B)
ニラウラ マダン
Other External Funds
-
CdTe成長層を用いた医療用高感度大面積Ｘ線画像検出器アレイの開発
2017.04 - 2018.03
民間財団等 財）中谷医工計測技術振興財団 平成28年度開発研究助成
ニラウラ マダン
Grant type：Competitive
-
医療用高性能大面積半導体放射線画像検出器の開発
2003.10 - 2006.09
経済産業省 産業技術研究助成(NEDO)
ニラウラ マダン
Grant type：Competitive
Committee Memberships
-
応用物理学会 放射線分科会 放射線分科会 幹事
2023.04 - 2025.03
Committee type：Academic society
-
The Institute of Electrical and ElectronicsEngineers 2017 Room Temperature Semiconductor Detectors Advisory Committee
2016.12
Committee type：Academic society
-
応用物理学会 応用物理学会代議員
2016.02 - 2018.01
Committee type：Academic society
-
The International Society for Optics and Photonics Program committee
2015.09
Committee type：Academic society
-
応用物理学会 審査員
2008.04
Committee type：Academic society