MIYOSHI Makoto

写真a

Affiliation Department

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Research Center for Nano-Device and next generation material

Title

Professor

Contact information

Contact information

Homepage

http://miyoshi.web.nitech.ac.jp/index.html

External Link

Degree

  • Doctor of Engineering ( 2006.03   Nagoya Institute of Technology )

Research Interests

  • 窒化物半導体

  • 受光デバイス

  • 電子デバイス

  • 結晶工学

  • 半導体工学

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  • Nanotechnology/Materials / Applied physical properties

  • Nanotechnology/Materials / Crystal engineering

From School

  • Osaka University   Faculty of Engineering Science   Graduated

    1986.04 - 1990.03

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    Country:Japan

From Graduate School

  • Osaka University   Graduate School, Division of Engineering Science   Master's Course   Completed

    1990.04 - 1992.03

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    Country:Japan

External Career

  • Shin-Etsu Handotai Co., Ltd.   Isobe R&D Center   Chief Researcher

    2011.03 - 2012.01

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    Country:Japan

  • NGK Insulators, Ltd.   Corporate R&D   Chief Researcher

    1992.04 - 2011.02

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    Country:Japan

  • Hokkaido University   Research Center For Integrated Quantum Electronics   Guest Professor

    2020.04 - 2021.03

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    Country:Japan

Professional Memberships

  • 応用物理学会

    1998.01

Qualification Acquired

  • 防火管理者(甲種)

  • Person in Charge of High-pressure Gas Production Security (chemical machinery and frozen machine)

  • Hazardous Material Handler (second kind)

  • X-ray Work Chief Person

 

Papers

  • Characterizations of the sub-bandgap optical absorption in an undoped-GaN and a 90-nm-thick Al1-xInxN thin film on a sapphire substrate grown by MOCVD Reviewed International journal

    K. Noda, Y. Murakami, H. Toyoda, K. Shibata, Y. Tsukada, D. Imai, T. Takeuchi, M. Miyoshi, T. Miyajima

    Physica Status Solidi B: Basic Solid State Physics   2400029-1 - 2400029-7   2024.05

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:WILEY-VCH  

    DOI: 10.1002/pssb.202400029

    Other Link: https://onlinelibrary.wiley.com/doi/10.1002/pssb.202400029

  • Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate Reviewed International journal

    Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi

    Applied Physics Letters   124 ( 18 )   18210-1 - 18210-4   2024.05

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:AIP  

    DOI: 10.1063/5.0187043

    Other Link: https://pubs.aip.org/aip/apl/article/124/18/182102/3286954/Current-collapse-suppression-in-AlGaInN-GaN-HEMTs

  • Over 43%-power-efficiency GaInN-based photoelectric transducer on free-standing GaN substrate for optical wireless power transmission system Reviewed International journal

    Takahiro Fujisawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi

    Semiconductor Science and Technology   39 ( 4 )   045010-1 - 045010-6   2024.02

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP  

    DOI: 10.1088/1361-6641/ad2d62

    Other Link: https://iopscience.iop.org/article/10.1088/1361-6641/ad2d62

  • Characterization of dislocations induced by Vickers indentation in GaN for explaining size ratios of dislocation patterns Reviewed International journal

    Yukari Ishikawa, Yoshihiro Sugawara, Yongzhao Yao, Makoto Miyoshi, Takashi Egawa

    Journal of Materials Science   59 ( 7 )   2974 - 2987   2024.02

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Springer  

    DOI: https://doi.org/10.1007/s10853-024-09392-z

    Other Link: https://link.springer.com/article/10.1007/s10853-024-09392-z#citeas

  • Sub-bandgap optical absorption processes in 300-nm-thick Al1-xInxN alloys grown on a c-plane GaN/sapphire template Reviewed International journal

    Daichi Imai, Yuto Murakami, Hayata Toyoda, Kouki Noda, Kyosuke Masaki, Kazutoshi Kubo, Mayu Nomura, Takao Miyajima, Makoto Miyoshi, Tetsuya Takeuchi

    Journal of Applied Physics   135 ( 3 )   035703-1 - 035703-8   2024.01

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AIP  

    DOI: 10.1063/5.0181231

    Other Link: https://pubs.aip.org/aip/jap/article/135/3/035703/3000640/Sub-bandgap-optical-absorption-processes-in-300-nm

  • Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different-hole-concentration p-base layers Reviewed International journal

    Akira Mase, Yusuke Iida, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi

    Journal of Vacuum Science & Technology B   41 ( 5 )   052206-1 - 052206-6   2023.09

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:AVS  

    DOI: 10.1116/6.0002577

    Other Link: https://pubs.aip.org/avs/jvb/article/41/5/052206/2909805/Simulation-analyses-of-carrier-dynamics-in-npn

  • Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer Reviewed International journal

    Akira Mase, Pradip Dalapati, Ryosuke Hayafuji, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa

    Semiconductor Science and Technology   38 ( 9 )   095005-1 - 095005-6   2023.08

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  • Current-driven degradation dynamics in GaN/InGaN multi-quantum-wells UV photodetectors fabricated with a high-quality Al2O3 passivation film Reviewed International journal

    Pradip Dalapati, Takashi Egawa, Makoto Miyoshi

    Vaccum   213   112159-1 - 112159-6   2023.05

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Elsevier  

    DOI: 10.1016/j.vacuum.2023.112159

    Other Link: https://www.sciencedirect.com/science/article/pii/S0042207X23003561?via%3Dihub

  • DC and pulse I-V characteristics of strain-engineered AlGaInN/GaN HEMTs fabricated on single-crystal AlN substrate Reviewed International journal

    Makoto Miyoshi, Sakura Tanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa

    Physica Status Solidi A: Applications and Materials Science   220   2200733-1 - 2200733-5   2023.01

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:WILEY-VCH  

    DOI: 10.1002/pssa.202200733

    Other Link: https://onlinelibrary.wiley.com/doi/10.1002/pssa.202200733

  • Growth and microstructure analyses of semipolar AlInN epitaxial layers on a fully relaxed semipolar {11-22} GaInN/GaN/m-plane sapphire template Reviewed International journal

    Makoto Miyoshi, Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Tetsuya Takeuchi, Narihito Okada, Kazuyuki Tadatomo

    Physica Status Solidi B: Basic Solid State Physics   260   2200492-1 - 2200492-8   2023.01

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:WILEY-VCH  

    DOI: 10.1002/pssb.202200492

    Other Link: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.202200492

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Misc

  • 四元混晶AlGaInNエミッタとp型GaInNベースを用いたGaN系HBTの作製

    滝本 将也、間瀬 晃、小嶋 智輝、江川 孝志、三好 実人

    2023.11

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    Authorship:Corresponding author   Language:Japanese  

  • 光無線給電システムに向けた自立GaN基板上GaInN系受光素子の作製と特性評価

    藤澤 孝博、Hu Nan、小嶋 智輝、江川 孝志、三好 実人

    2023.11

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    Authorship:Corresponding author   Language:Japanese  

  • 単結晶AlN基板上の薄層UID-GaNチャネルを備えた AlGaInN/GaN HEMTの作製と特性評価

    川出 智之、米谷 宜展、田中 さくら、江川 孝志、三好 実人

    2023.11

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    Authorship:Corresponding author   Language:Japanese  

  • 光無線給電の極限効率を目指すGaN系光電変換デバイス

    三好 実人

    42 ( 10 )   81 - 84   2023.10

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    Authorship:Lead author, Corresponding author   Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)  

    Other Link: https://www.optronics.co.jp/magazine/opt.php?year=2023&month=10

  • 極微細構造を有するNiパターンの凝集現象を用いたサファイア基板上転写フリーグラフェンFETの作製と評価

    加藤 一朗、久保 俊晴、三好 実人、江川 孝志

    123   20 - 23   2023.05

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    Language:Japanese  

  • 単結晶AlN基板上AlGaInN/GaN HEMTの作製と特性評価

    田中 さくら、川出 智之、井上 暁喜、江川 孝志、三好 実人

    122   53 - 56   2022.11

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    Authorship:Last author, Corresponding author   Language:Japanese  

  • 半極性 {11-22}AlInN/GaInN の成長温度依存性

    藤澤 孝博、中林 泰希、江川 孝志、三好 実人、竹内 哲也、岡田 成仁、只友 一行

    122   81 - 84   2022.11

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    Authorship:Corresponding author   Language:Japanese  

  • GaN系HBTに向けたp-GaInN base層と四元AlGaInN emitter層の検討

    飯田 悠介、間瀬 晃、滝本 将也、二階 祐宇、江川 孝志、三好 実人

    122   57 - 60   2022.11

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    Authorship:Last author, Corresponding author   Language:Japanese  

  • c面Al0.83In0.17N/GaN格子整合ヘテロ構造の光学特性評価

    李 リヤン、嶋 紘平、山中 瑞樹、小島 一信、江川 孝志、上殿 明良、石橋 章司、竹内 哲也、三好 実人、秩父 重英

    121 ( 261 )   45 - 50   2021.11

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    Language:Japanese  

    Other Link: https://ken.ieice.org/ken/paper/202111250Cgs/

  • AlN/AlGaInNバリアを備えた高耐圧Al0.36Ga0.64NチャネルHFET

    井上 暁喜、田中 さくら、江川 孝志、三好 実人

    121 ( 259 )   79 - 82   2021.11

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    Authorship:Last author, Corresponding author   Language:Japanese  

    Other Link: https://ken.ieice.org/ken/paper/20211126LCgR/

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Presentations

  • Near-UV photoelectric transducers for OWPT systems based on GaInN multiple quantum-well structures Invited International conference

    Makoto Miyoshi

    The 6th Optical Wireless and Fiber Power Transmission Conference (OWPT 2024)  2024.04 

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    Event date: 2024.04

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:PACIFICO Yokohama, Kanagawa, JAPAN   Country:Japan  

  • Wavelength dependence of temperature characteristics of InGaN photodetectors for optical wireless power supply International conference

    Junichi Suzuki, Shunki Hayashi, Shunsuke Shibui, Masahiro Koga, Ryusei Takahashi, Reo Aoyama, Takahiro Noguchi, Takahiro Fujisawa, Toshihiko Fukamachi, Koichi Naniwae, Shiori Ii, Ruka Watanabe, Makoto Miyoshi, Tetsuya Takeuchi, Satoshi Kamiyama, Shiro Uchida

    The 6th Optical Wireless and Fiber Power Transmission Conference (OWPT 2024)  2024.04 

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    Event date: 2024.04

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO Yokohama, Kanagawa, JAPAN   Country:Japan  

  • 厚いNiパターンの凝集現象を利用したサファイア基板上微細幅転写フリーグラフェンの作製

    加藤 一朗、久保 俊晴、三好 実人、江川 孝志

    第71回応用物理学会春季学術講演会   2024.04 

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    Event date: 2024.03

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学 世田谷キャンパス+オンライン   Country:Japan  

  • 四元混晶n型AlGaInNエミッタとp型GaInNベースを備えたGaN系HBTの作製と特性評価 Invited

    滝本 将也、間瀬 晃、小嶋 智輝、井上 諒星、江川 孝志、三好 実人

    電子情報通信学会総合大会  2024.03 

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    Event date: 2024.03

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:広島大学   Country:Japan  

  • Fabrication of high AlN-mole-fraction Al0.7Ga0.3N channel HFETs using a single-crystal AlN substrate International conference

    Yoshinobu Kometani, Tomoyuki Kawaide, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi

    16th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2024)   2024.03 

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    Event date: 2024.03

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya University, Japan   Country:Japan  

  • InGaN photovoltaic cells for applications in laser power beaming International conference

    Masahiro Koga, Shunsuke Shibui, Ryusei Takahashi, Junichi Suzuki, Reo Aoyama, Takahiro Noguchi, Shunki Hayashi, Takahiro Fujisawa, Shiori Ii, Ruka Watanabe, Toshihiko Fukamachi, Koichi Naniwae, Makoto Miyoshi, Tetsuya Takeuchi, Satoshi Kamiyama, Shiro Uchida

    SPIE Photonics West 2024  2024.01 

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    Event date: 2024.01 - 2024.02

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Moscone Center, San Francisco, CA, US   Country:United States  

    DOI: https://doi.org/10.1117/12.3001576

  • GaN、AlGaN系半導体デバイスの進展 ~ワイドバンドギャップから超ワイドバンドギャップへ~ Invited

    次世代パワー半導体(GaN・酸化ガリウム・ダイヤモンド半導体)の基礎と最新技術およびデバイス開発への応用  2023.12 

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    Event date: 2023.12

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

    Venue:オンライン   Country:Japan  

  • 単結晶AlN基板上の薄層UID-GaNチャネルを備えた AlGaInN/GaN HEMTの作製と特性評価

    川出 智之、米谷 宜展、田中 さくら、江川 孝志、三好 実人

    電子情報通信学会 CPM/ED/LQE研究会  2023.11 

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    Event date: 2023.11 - 2023.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松   Country:Japan  

  • 光無線給電システムに向けた自立GaN基板上GaInN系受光素子の作製と特性評価

    藤澤 孝博、Hu Nan、小嶋 智輝、江川 孝志、三好 実人

    電子情報通信学会 CPM/ED/LQE研究会  2023.11 

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    Event date: 2023.11 - 2023.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松   Country:Japan  

  • 四元混晶AlGaInNエミッタとp型GaInNベースを用いたGaN系HBTの作製

    滝本 将也、間瀬 晃、小嶋 智輝、江川 孝志、三好 実人

    電子情報通信学会 CPM/ED/LQE研究会  2023.11 

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    Event date: 2023.11 - 2023.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:アクトシティ浜松   Country:Japan  

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Industrial Property Rights

  • 半導体装置および半導体装置用エピタキシャル基板

    三好 実人、間瀬 晃、二階 祐宇、飯田 悠介

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    Applicant:国立大学法人名古屋工業大学

    Application no:2021-026922  Date applied:2021.02

    Announcement no:2022-128613  Date announced:2022.09

    Country of applicant:Domestic   Country of acquisition:Domestic

  • ヘテロ接合バイポーラトランジスタ用エピタキシャル基板及びヘテロ接合バイポーラトランジスタ

    三好 実人

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    Applicant:国立大学法人名古屋工業大学

    Application no:2019-213233  Date applied:2019.11

    Announcement no:2021-086878  Date announced:2021.06

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 紫外線発光素子

    三好 実人、江川 孝志

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    Applicant:国立大学法人 名古屋工業大学

    Application no:2017-141421  Date applied:2017.07

    Announcement no:2019-021852   Date announced:2019.02

    Country of applicant:Domestic   Country of acquisition:Domestic

  • グラフェンデバイスおよびその製造方法

    三好 実人、久保 俊晴、江川 孝志

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    Applicant:国立大学法人 名古屋工業大学

    Application no:2015-212450  Date applied:2015.10

    Announcement no:2017-084981  Date announced:2017.05

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 半導体素子用エピタキシャル基板、半導体素子、および半導体素子用エピタキシャル基板の作製方法

    三好 実人、倉岡 義孝、角谷 茂明、田中 光浩

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    Application no:2014-192231  Date applied:2014.09

    Announcement no:2015-043437  Date announced:2015.03

    Patent/Registration no:6170893   Date registered:2017.07  Date issued:2017.07

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 半導体発光素子および半導体発光素子の製造方法

    杉山 智彦、角谷 茂明、三好 実人、田中 光浩

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    Application no:2014-152754  Date applied:2014.07

    Announcement no:2014-199953   Date announced:2014.10

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 半導体装置用エピタキシャル基板および半導体装置用エピタキシャル基板の製造方法

    倉岡 義孝、三好 実人、角谷 茂明、田中 光浩

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    Application no:2014-038629   Date applied:2014.02

    Announcement no:2014-123767   Date announced:2014.07

    Patent/Registration no:5671168  Date registered:2015.02  Date issued:2015.02

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 半導体素子用エピタキシャル基板、半導体素子、および半導体素子用エピタキシャル基板の製造方法

    三好 実人、角谷 茂明、市村 幹也、田中 光浩

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    Application no:2013-258021  Date applied:2013.12

    Announcement no:2014-099623   Date announced:2014.05

    Patent/Registration no:5671127  Date registered:2014.12  Date issued:2014.12

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 半導体素子用エピタキシャル基板、半導体素子用エピタキシャル基板の製造方法、および半導体素子

    角谷 茂明、三好 実人、市村 幹也、杉山 智彦、倉岡 義孝、田中 光浩

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    Application no:2013-251963   Date applied:2013.12

    Announcement no:2014-103400   Date announced:2014.06

    Country of applicant:Domestic   Country of acquisition:Domestic

  • ワイドギャップの窒化物半導体を利用した高温動作が可能な高感度ガスセンサー

    三好 実人

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    Application no:2013-245916  Date applied:2013.11

    Announcement no:2015-102538   Date announced:2015.06

    Country of applicant:Domestic   Country of acquisition:Domestic

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Awards

  • 電子情報通信学会 電子デバイス (ED) 研究専門委員会 論文発表奨励賞

    2024.01   電子情報通信学会 エレクトロニクスソサエティ 電子デバイス (ED) 研究専門委員会   四元混晶AlGaInNエミッタとp型GaInNベースを用いたGaN系HBTの作製

    滝本 将也、間瀬 晃、小嶋 智輝、江川 孝志、三好 実人

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  • Outstanding Poster Award

    2023.11   14th International Conference on Nitride Semiconductors, ICNS-14   High-efficiency GaInN-based photovoltaic cells on free-standing GaN substrate for optical wireless power transmission system

    Takahiro Fujisawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi

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    Award type:Award from international society, conference, symposium, etc. 

  • IOP Outstanding Reviewer Awards 2022

    2023.03   IOP publishing  

    Makoto Miyoshi

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    Award type:Honored in official journal of a scientific society, scientific journal  Country:Japan

  • The Best Poster Presentation

    2022.10   International Workshop on Nitride Semiconductors, IWN 2022   AlGaInN/GaN HEMTs on single-crystal AlN substrate

    Sakura Tanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa, Makoto Miyoshi

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    Award type:Award from international society, conference, symposium, etc. 

  • 名古屋工業大学教員評価優秀賞

    2022.06   名古屋工業大学  

    三好 実人

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    Country:Japan

  • IOP Outstanding Reviewer Awards 2021

    2022.04   IOP publishing  

    Makoto Miyoshi

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    Award type:Honored in official journal of a scientific society, scientific journal  Country:Japan

  • The ISPlasma Prize, The 2022 Best Short Presentation Awards

    2022.03   The ISPlasma Prize 2022   Effect of a Thin AlN Layer Inserted into the GaN Drift Layers on Reverse Breakdown Behavior for Fully Vertical GaN-on-Si Schottky Barrier Diodes

    Akira Mase, Pradip Dalapati, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa

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    Award type:Award from international society, conference, symposium, etc.  Country:Japan

  • Editor's Pick Article

    2021.09   AIP Advances   Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations

    Makoto Miyoshi, Taiki Nakabayashi, Kosuke Yamamoto, Pradip Dalapati, Takashi Egawa

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    Award type:Honored in official journal of a scientific society, scientific journal 

  • 電子情報通信学会 電子デバイス (ED) 研究専門委員会 論文発表奨励賞

    2019.01   電子情報通信学会 エレクトロニクスソサエティ 電子デバイス (ED) 研究専門委員会   歪み制御AlGaInNバリア層を備えた耐圧2.5kV級AlGaNチャネルHFET

    細見 大樹、古岡 啓太、陳 珩、斉藤 早紀、久保 俊晴、江川 孝志、三好 実人

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

  • 名古屋工業大学教員評価優秀賞

    2018.06   名古屋工業大学  

    三好 実人

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    Country:Japan

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Scientific Research Funds Acquisition Results

  • 窒化物半導体異種界面パラレル伝導制御とマルチチャネル高周波トランジスタの開発

    Grant number:23H01437  2023.04 - 2026.03

    日本学術振興会(JSPS)  科学研究費補助金  基盤研究(B)

    佐藤 威友(北海道大学)

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  • 超ワイドギャップAlN系半導体を用いたパワートランジスタの開発

    Grant number:21H01389  2021.04 - 2024.03

    日本学術振興会(JSPS)  科学研究費補助金  基盤研究(B)

    三好 実人

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    Authorship:Principal investigator  Grant type:Competitive

  • 強力な酸化剤を用いた窒化物半導体ウェットエッチング技術の開発とトランジスタ応用

    Grant number:20H02175  2020.04 - 2023.03

    日本学術振興会(JSPS)  科学研究費補助金  基盤研究(B)

    佐藤 威友(北海道大学)

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  • 極微細金属パターン付き基板による高性能低消費電力グラフェンFETの作製

    Grant number:19K04531  2019.04 - 2022.03

    日本学術振興会(JSPS)  科学研究費補助金  基盤研究(C)

    久保 俊晴

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  • 超低損失・新規窒化物ヘテロ構造トランジスタの実現に向けたプロセス・設計基盤の構築

    Grant number:16K06298  2016.04 - 2019.03

    日本学術振興会(JSPS)  科学研究費補助金  基盤研究(C)

    三好 実人

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    Authorship:Principal investigator  Grant type:Competitive

Other External Funds

  • 次世代無線通信に向けた高周波GaN系バイポーラトランジスタの研究開発

    2023.05 - 2024.03

    総務省  戦略的情報通信研究開発推進事業(SCOPE) 

    三好 実人

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    Authorship:Principal investigator  Grant type:Competitive

  • 移動体への光無線給電システムの研究開発

    2022 - 2024

    国立研究開発法人 新エネルギー・産業技術総合開発機構(NEDO)  先導研究プログラム/エネルギー・環境新技術先導研究プログラム(エネ環) 

    上山 智(名城大学)

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    Authorship:Coinvestigator(s)  Grant type:Competitive

  • 次世代無線通信システムに資する新構造・窒化物系バイポーラトランジスタの開発

    2020.12 - 2023.03

    国立研究開発法人 科学技術振興機構(JST)  研究成果最適展開支援プログラム(A-STEP)/産学共同(育成型) 

    三好 実人

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    Authorship:Principal investigator  Grant type:Competitive

  • ワイドギャップ半導体による格子整合ヘテロ構造を利用した新規・ミリ波用バイポーラトランジスタの試験的研究

    2019.09 - 2020.08

    国立研究開発法人 科学技術振興機構(JST)  研究成果最適展開支援プログラム(A-STEP)/機能検証フェーズ試験研究タイプ 

    三好 実人

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    Authorship:Principal investigator  Grant type:Competitive

  • GaNパワーデバイスの高性能化と高機能電源回路の開発

    2019 - 2021

    公益財団法人 科学技術交流財団  知の拠点あいち重点研究プロジェクトⅢ期/近未来自動車技術開発プロジェクト 

    清水 三聡(産業技術総合研究所)

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    Authorship:Coinvestigator(s)  Grant type:Competitive

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Social Activities

  • 半導体ナノテクノロジー:日本を支える最先端技術

    Role(s): Lecturer

    2023.08

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    Audience: High school students, General

  • 半導体ナノテクノロジー:日本を支える最先端技術

    Role(s): Lecturer

    2022.08

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    Audience: High school students, General

  • イノベーション・ジャパン2021 ~大学見本市~

    Role(s): Informant

    2021.08

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    Audience: General

  • 半導体ナノテクノロジー:日本を支える最先端技術

    Role(s): Lecturer

    2021.08

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    Audience: General

  • 半導体ナノテクノロジー:日本を支える最先端技術

    Role(s): Lecturer

    2019.08

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    Audience: General

  • 半導体ナノテクノロジー:日本を支える最先端技術

    Role(s): Lecturer

    2018.08

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    Audience: General

  • 半導体ナノテクノロジー:日本を支える最先端技術

    Role(s): Lecturer

    2017.08

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    Audience: General

  • イノベーション・ジャパン2017 ~大学見本市~

    Role(s): Informant

    2017.08

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    Audience: General

  • 半導体ナノテクノロジー:日本を支える最先端技術

    Role(s): Lecturer

    2016.08

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    Audience: General

  • イノベーション・ジャパン2016 ~大学見本市~

    Role(s): Informant

    2016.08

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    Audience: General

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Media Coverage

  • シリコン基板上GaN系パワーデバイスの最新技術動向

    2015.06