Affiliation Department |
Department of Electrical and Mechanical Engineering
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Title |
Professor |
Contact information |
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Homepage |
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External Link |
MIYOSHI Makoto
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Research Areas
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
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Nanotechnology/Materials / Applied physical properties
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Nanotechnology/Materials / Crystal engineering
From School
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Osaka University Faculty of Engineering Science Graduated
1986.04 - 1990.03
Country:Japan
From Graduate School
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Osaka University Graduate School, Division of Engineering Science Master's Course Completed
1990.04 - 1992.03
Country:Japan
External Career
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Shin-Etsu Handotai Co., Ltd. Isobe R&D Center Chief Researcher
2011.03 - 2012.01
Country:Japan
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NGK Insulators, Ltd. Corporate R&D Chief Researcher
1992.04 - 2011.02
Country:Japan
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Hokkaido University Research Center For Integrated Quantum Electronics Guest Professor
2020.04 - 2021.03
Country:Japan
Qualification Acquired
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防火管理者(甲種)
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Person in Charge of High-pressure Gas Production Security (chemical machinery and frozen machine)
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Hazardous Material Handler (second kind)
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X-ray Work Chief Person
Papers
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Simulation analyses of carrier dynamics in npn-type GaN-heterojunction bipolar transistors with different-hole-concentration p-base layers Reviewed International journal
Akira Mase, Yusuke Iida, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi
Journal of Vacuum Science & Technology B 41 052206 2023.09
Authorship:Last author Language:English Publishing type:Research paper (scientific journal) Publisher:AVS
DOI: 10.1116/6.0002577
Other Link: https://pubs.aip.org/avs/jvb/article/41/5/052206/2909805/Simulation-analyses-of-carrier-dynamics-in-npn
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Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer Reviewed International journal
Akira Mase, Pradip Dalapati, Ryosuke Hayafuji, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa
Semiconductor Science and Technology 38 095005-1 - 095005-6 2023.08
Publisher:IOP
Other Link: https://iopscience.iop.org/article/10.1088/1361-6641/aceaa2
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Current-driven degradation dynamics in GaN/InGaN multi-quantum-wells UV photodetectors fabricated with a high-quality Al2O3 passivation film Reviewed International journal
Pradip Dalapati, Takashi Egawa, Makoto Miyoshi
Vaccum 213 112159-1 - 112159-6 2023.05
Authorship:Last author Language:English Publishing type:Research paper (scientific journal) Publisher:Elsevier
DOI: 10.1016/j.vacuum.2023.112159
Other Link: https://www.sciencedirect.com/science/article/pii/S0042207X23003561?via%3Dihub
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DC and pulse I-V characteristics of strain-engineered AlGaInN/GaN HEMTs fabricated on single-crystal AlN substrate Reviewed International journal
Makoto Miyoshi, Sakura Tanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa
Physica Status Solidi A: Applications and Materials Science 2023.02
Authorship:Lead author, Corresponding author Language:English Publishing type:Research paper (scientific journal) Publisher:WILEY-VCH
Other Link: https://onlinelibrary.wiley.com/doi/10.1002/pssa.202200733
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Growth and microstructure analyses of semipolar AlInN epitaxial layers on a fully relaxed semipolar {11-22} GaInN/GaN/m-plane sapphire template Reviewed International journal
Makoto Miyoshi, Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Tetsuya Takeuchi, Narihito Okada, Kazuyuki Tadatomo
Physica Status Solidi B: Basic Solid State Physics 2023.01
Authorship:Lead author, Corresponding author Language:English Publishing type:Research paper (scientific journal) Publisher:WILEY-VCH
Other Link: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssb.202200492
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High temperature characteristics of GaN/InGaN multiple-quantum-well UV photodetectors: Analysis of photovoltaic and carrier transit time properties Reviewed International journal
Pradip Dalapati, Takashi Egawa, Makoto Miyoshi
Journal of Vacuum Science & Technology B 40 ( 6 ) 062210-1 - 062210-7 2022.11
Authorship:Last author Language:English Publishing type:Research paper (scientific journal) Publisher:AVS
DOI: doi.org/10.1116/6.0002101
Other Link: https://avs.scitation.org/doi/10.1116/6.0002101
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Room-temperature nonradiative recombination lifetimes in c-plane Al1-xInxN epilayers nearly and modestly lattice-matched to GaN (0.11 ≤ x ≤ 0.21) Reviewed International journal
L. Y. Li, K. Shima, M. Yamanaka, T. Egawa, T. Takeuchi, M. Miyoshi, S. Ishibashi, A.Uedono, S. F. Chichibu
Journal of Applied Physics 132 ( 16 ) 163102-1 - 163102-10 2022.10
Language:English Publishing type:Research paper (scientific journal) Publisher:AIP
DOI: 10.1063/5.0106540
Other Link: https://aip.scitation.org/doi/10.1063/5.0106540
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Current-induced degradation behaviors of InGaN/GaN multiple-quantum-well UV photodetectors: Role of electrically active defects Reviewed International coauthorship International journal
Pradip Dalapati, Abdulaziz Almalki, Sultan Alhassan, Saud Alotaibi, Maryam Al Huwayz, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi, Mohamed Henini
Sensors and Actuators: A. Physical 347 113935-1 - 113935-8 2022.10
Language:English Publishing type:Research paper (scientific journal) Publisher:Elsevier
DOI: https://doi.org/10.1016/j.sna.2022.113935
Other Link: https://www.sciencedirect.com/science/article/abs/pii/S0924424722005702
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The role of p-GaN layer thickness for the evaluation of high-performance and ultrafast GaInN/GaN multiple quantum wells UV photodetectors Reviewed International journal
Pradip Dalapati, Taiki Nakabayashi, Kosuke Yamamoto, Takashi Egawa, Makoto Miyoshi
Optical Materials 127 112284-1 - 112284-9 2022.05
Authorship:Last author Language:English Publishing type:Research paper (scientific journal) Publisher:Elsevier
DOI: 10.1016/j.optmat.2022.112284
Other Link: https://www.sciencedirect.com/science/article/pii/S0925346722003184?dgcid=coauthor
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Simulation study on novel GaN-based npn heterojunction bipolar transistors with a quaternary AlGaInN emitter and a two-dimensionally conductive base Reviewed International journal
Akira Mase, Yutaka Nikai, Yusuke Iida, Takashi Egawa, Makoto Miyoshi
Physica Status Solidi A: Applications and Materials Science 219 ( 4 ) 2100397-1 - 2100397-5 2022.02
Authorship:Last author Language:English Publishing type:Research paper (scientific journal) Publisher:WILEY-VCH
Other Link: https://onlinelibrary.wiley.com/doi/10.1002/pssa.202100397
Misc
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四元混晶AlGaInNエミッタとp型GaInNベースを用いたGaN系HBTの作製
滝本 将也、間瀬 晃、小嶋 智輝、江川 孝志、三好 実人
2023.11
Authorship:Corresponding author Language:Japanese
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光無線給電システムに向けた自立GaN基板上GaInN系受光素子の作製と特性評価
藤澤 孝博、Hu Nan、小嶋 智輝、江川 孝志、三好 実人
2023.11
Authorship:Corresponding author Language:Japanese
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単結晶AlN基板上の薄層UID-GaNチャネルを備えた AlGaInN/GaN HEMTの作製と特性評価
川出 智之、米谷 宜展、田中 さくら、江川 孝志、三好 実人
2023.11
Authorship:Corresponding author Language:Japanese
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光無線給電の極限効率を目指すGaN系光電変換デバイス
三好 実人
42 ( 10 ) 81 - 84 2023.10
Authorship:Lead author, Corresponding author Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)
Other Link: https://www.optronics.co.jp/magazine/opt.php?year=2023&month=10
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極微細構造を有するNiパターンの凝集現象を用いたサファイア基板上転写フリーグラフェンFETの作製と評価
加藤 一朗、久保 俊晴、三好 実人、江川 孝志
123 20 - 23 2023.05
Language:Japanese
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単結晶AlN基板上AlGaInN/GaN HEMTの作製と特性評価
田中 さくら、川出 智之、井上 暁喜、江川 孝志、三好 実人
122 53 - 56 2022.11
Authorship:Last author, Corresponding author Language:Japanese
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半極性 {11-22}AlInN/GaInN の成長温度依存性
藤澤 孝博、中林 泰希、江川 孝志、三好 実人、竹内 哲也、岡田 成仁、只友 一行
122 81 - 84 2022.11
Authorship:Corresponding author Language:Japanese
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GaN系HBTに向けたp-GaInN base層と四元AlGaInN emitter層の検討
飯田 悠介、間瀬 晃、滝本 将也、二階 祐宇、江川 孝志、三好 実人
122 57 - 60 2022.11
Authorship:Last author, Corresponding author Language:Japanese
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c面Al0.83In0.17N/GaN格子整合ヘテロ構造の光学特性評価
李 リヤン、嶋 紘平、山中 瑞樹、小島 一信、江川 孝志、上殿 明良、石橋 章司、竹内 哲也、三好 実人、秩父 重英
121 ( 261 ) 45 - 50 2021.11
Language:Japanese
Other Link: https://ken.ieice.org/ken/paper/202111250Cgs/
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AlN/AlGaInNバリアを備えた高耐圧Al0.36Ga0.64NチャネルHFET
井上 暁喜、田中 さくら、江川 孝志、三好 実人
121 ( 259 ) 79 - 82 2021.11
Authorship:Last author, Corresponding author Language:Japanese
Other Link: https://ken.ieice.org/ken/paper/20211126LCgR/
Presentations
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GaN、AlGaN系半導体デバイスの進展 ~ワイドバンドギャップから超ワイドバンドギャップへ~ Invited
次世代パワー半導体(GaN・酸化ガリウム・ダイヤモンド半導体)の基礎と最新技術およびデバイス開発への応用 2023.12
Event date: 2023.12
Language:Japanese Presentation type:Public lecture, seminar, tutorial, course, or other speech
Venue:オンライン Country:Japan
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単結晶AlN基板上の薄層UID-GaNチャネルを備えた AlGaInN/GaN HEMTの作製と特性評価
川出 智之、米谷 宜展、田中 さくら、江川 孝志、三好 実人
電子情報通信学会 CPM/ED/LQE研究会 2023.11
Event date: 2023.11 - 2023.12
Language:Japanese Presentation type:Oral presentation (general)
Venue:アクトシティ浜松 Country:Japan
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光無線給電システムに向けた自立GaN基板上GaInN系受光素子の作製と特性評価
藤澤 孝博、Hu Nan、小嶋 智輝、江川 孝志、三好 実人
電子情報通信学会 CPM/ED/LQE研究会 2023.11
Event date: 2023.11 - 2023.12
Language:Japanese Presentation type:Oral presentation (general)
Venue:アクトシティ浜松 Country:Japan
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四元混晶AlGaInNエミッタとp型GaInNベースを用いたGaN系HBTの作製
滝本 将也、間瀬 晃、小嶋 智輝、江川 孝志、三好 実人
電子情報通信学会 CPM/ED/LQE研究会 2023.11
Event date: 2023.11 - 2023.12
Language:Japanese Presentation type:Oral presentation (general)
Venue:アクトシティ浜松 Country:Japan
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Improved performance of GaInN multiple-quantum-well photovoltaic cells on free-standing GaN substrates with a TMAH treatment International conference
Nan Hu, Takahiro Fujisawa, Mase Akira, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi
14th International Conference on Nitride Semiconductors (ICNS-14) 2023.11
Event date: 2023.11
Language:English Presentation type:Poster presentation
Venue:Fukuoka, Japan Country:Japan
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In composition dependence of the sub-bandgap optical absorption processes in Al1-xInxN thin films grown on a c-plane GaN/Sapphire template International conference
Kouki Noda, Yuto Murakami, Hayata Toyoda, Kana Shibata, Daichi Imai, Makoto Miyoshi, Tetsuya Takeuchi, Takao Miyajima
14th International Conference on Nitride Semiconductors (ICNS-14) 2023.11
Event date: 2023.11
Language:English
Venue:Fukuoka, Japan Country:Japan
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InGaN MQW photonic power converter under 394 nm laser irradiation International conference
Ryusei Takahashi, Shunsuke Shibui, Masahiro Koga, Junichi Suzuki, Reo Aoyama, Takahiro Noguchi, Shunki Hayashi, Takahiro Fujisawa, Toshihiko Fukamachi, Koichi Naniwae, Shiori Ii, Ruka Watanabe, Makoto Miyoshi, Tetsuya Takeuchi, Satoshi Kamiyama, Shiro Uchida
14th International Conference on Nitride Semiconductors (ICNS-14) 2023.11
Event date: 2023.11
Language:English Presentation type:Poster presentation
Venue:Fukuoka, Japan Country:Japan
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High-efficiency GaInN-based photovoltaic cells on free-standing GaN substrate for optical wireless power transmission system International conference
Takahiro Fujisawa, Hu Nan, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi
14th International Conference on Nitride Semiconductors (ICNS-14) 2023.11
Event date: 2023.11
Language:English Presentation type:Oral presentation (general)
Venue:Fukuoka, Japan Country:Japan
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Device characteristics of AlGaInN/GaN HEMTs with a thin 150-nm-thick UID-GaN channel fabricated on single-crystal AlN substrate International conference
Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi
14th International Conference on Nitride Semiconductors (ICNS-14) 2023.11
Event date: 2023.11
Language:English Presentation type:Oral presentation (general)
Venue:Fukuoka, Japan Country:Japan
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Fabrication and device characteristics of GaN-based npn-type HBTs using a Quaternary AlGaInN Emitter and a GaInN Base International conference
Masaya Takimoto, Akira Mase, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi
14th International Conference on Nitride Semiconductors (ICNS-14) 2023.11
Event date: 2023.11
Language:English Presentation type:Poster presentation
Venue:Fukuoka, Japan Country:Japan
Industrial Property Rights
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半導体装置および半導体装置用エピタキシャル基板
三好 実人、間瀬 晃、二階 祐宇、飯田 悠介
Applicant:国立大学法人名古屋工業大学
Application no:2021-026922 Date applied:2021.02
Announcement no:2022-128613 Date announced:2022.09
Country of applicant:Domestic Country of acquisition:Domestic
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ヘテロ接合バイポーラトランジスタ用エピタキシャル基板及びヘテロ接合バイポーラトランジスタ
三好 実人
Applicant:国立大学法人名古屋工業大学
Application no:2019-213233 Date applied:2019.11
Announcement no:2021-086878 Date announced:2021.06
Country of applicant:Domestic Country of acquisition:Domestic
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紫外線発光素子
三好 実人、江川 孝志
Applicant:国立大学法人 名古屋工業大学
Application no:2017-141421 Date applied:2017.07
Announcement no:2019-021852 Date announced:2019.02
Country of applicant:Domestic Country of acquisition:Domestic
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グラフェンデバイスおよびその製造方法
三好 実人、久保 俊晴、江川 孝志
Applicant:国立大学法人 名古屋工業大学
Application no:2015-212450 Date applied:2015.10
Announcement no:2017-084981 Date announced:2017.05
Country of applicant:Domestic Country of acquisition:Domestic
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半導体素子用エピタキシャル基板、半導体素子、および半導体素子用エピタキシャル基板の作製方法
三好 実人、倉岡 義孝、角谷 茂明、田中 光浩
Application no:2014-192231 Date applied:2014.09
Announcement no:2015-043437 Date announced:2015.03
Patent/Registration no:6170893 Date registered:2017.07 Date issued:2017.07
Country of applicant:Domestic Country of acquisition:Domestic
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半導体発光素子および半導体発光素子の製造方法
杉山 智彦、角谷 茂明、三好 実人、田中 光浩
Application no:2014-152754 Date applied:2014.07
Announcement no:2014-199953 Date announced:2014.10
Country of applicant:Domestic Country of acquisition:Domestic
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半導体装置用エピタキシャル基板および半導体装置用エピタキシャル基板の製造方法
倉岡 義孝、三好 実人、角谷 茂明、田中 光浩
Application no:2014-038629 Date applied:2014.02
Announcement no:2014-123767 Date announced:2014.07
Patent/Registration no:5671168 Date registered:2015.02 Date issued:2015.02
Country of applicant:Domestic Country of acquisition:Domestic
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半導体素子用エピタキシャル基板、半導体素子、および半導体素子用エピタキシャル基板の製造方法
三好 実人、角谷 茂明、市村 幹也、田中 光浩
Application no:2013-258021 Date applied:2013.12
Announcement no:2014-099623 Date announced:2014.05
Patent/Registration no:5671127 Date registered:2014.12 Date issued:2014.12
Country of applicant:Domestic Country of acquisition:Domestic
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半導体素子用エピタキシャル基板、半導体素子用エピタキシャル基板の製造方法、および半導体素子
角谷 茂明、三好 実人、市村 幹也、杉山 智彦、倉岡 義孝、田中 光浩
Application no:2013-251963 Date applied:2013.12
Announcement no:2014-103400 Date announced:2014.06
Country of applicant:Domestic Country of acquisition:Domestic
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ワイドギャップの窒化物半導体を利用した高温動作が可能な高感度ガスセンサー
三好 実人
Application no:2013-245916 Date applied:2013.11
Announcement no:2015-102538 Date announced:2015.06
Country of applicant:Domestic Country of acquisition:Domestic
Awards
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IOP Outstanding Reviewer Awards 2022
2023.03 IOP publishing
Makoto Miyoshi
Award type:Honored in official journal of a scientific society, scientific journal Country:Japan
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The Best Poster Presentation
2022.10 International Workshop on Nitride Semiconductors, IWN 2022 AlGaInN/GaN HEMTs on single-crystal AlN substrate
Sakura Tanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa, Makoto Miyoshi
Award type:Award from international society, conference, symposium, etc.
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名古屋工業大学教員評価優秀賞
2022.06 名古屋工業大学
三好 実人
Country:Japan
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IOP Outstanding Reviewer Awards 2021
2022.04 IOP publishing
Makoto Miyoshi
Award type:Honored in official journal of a scientific society, scientific journal Country:Japan
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The ISPlasma Prize, The 2022 Best Short Presentation Awards
2022.03 The ISPlasma Prize 2022 Effect of a Thin AlN Layer Inserted into the GaN Drift Layers on Reverse Breakdown Behavior for Fully Vertical GaN-on-Si Schottky Barrier Diodes
Akira Mase, Pradip Dalapati, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa
Award type:Award from international society, conference, symposium, etc. Country:Japan
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電子情報通信学会 電子デバイス (ED) 研究専門委員会 論文発表奨励賞
2019.01 電子情報通信学会 エレクトロニクスソサエティ 電子デバイス (ED) 研究専門委員会 歪み制御AlGaInNバリア層を備えた耐圧2.5kV級AlGaNチャネルHFET
細見 大樹、古岡 啓太、陳 珩、斉藤 早紀、久保 俊晴、江川 孝志、三好 実人
Award type:Award from Japanese society, conference, symposium, etc. Country:Japan
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名古屋工業大学教員評価優秀賞
2018.06 名古屋工業大学
三好 実人
Country:Japan
Scientific Research Funds Acquisition Results
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窒化物半導体異種界面パラレル伝導制御とマルチチャネル高周波トランジスタの開発
Grant number:23H01437 2023.04 - 2026.03
日本学術振興会(JSPS) 科学研究費補助金 基盤研究(B)
佐藤 威友(北海道大学)
Authorship:Coinvestigator(s) Grant type:Competitive
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超ワイドギャップAlN系半導体を用いたパワートランジスタの開発
Grant number:21H01389 2021.04 - 2024.03
日本学術振興会(JSPS) 科学研究費補助金 基盤研究(B)
三好 実人
Authorship:Principal investigator Grant type:Competitive
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強力な酸化剤を用いた窒化物半導体ウェットエッチング技術の開発とトランジスタ応用
Grant number:20H02175 2020.04 - 2023.03
日本学術振興会(JSPS) 科学研究費補助金 基盤研究(B)
佐藤 威友(北海道大学)
Authorship:Coinvestigator(s) Grant type:Competitive
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極微細金属パターン付き基板による高性能低消費電力グラフェンFETの作製
Grant number:19K04531 2019.04 - 2022.03
日本学術振興会(JSPS) 科学研究費補助金 基盤研究(C)
久保 俊晴
Authorship:Coinvestigator(s) Grant type:Competitive
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超低損失・新規窒化物ヘテロ構造トランジスタの実現に向けたプロセス・設計基盤の構築
Grant number:16K06298 2016.04 - 2019.03
日本学術振興会(JSPS) 科学研究費補助金 基盤研究(C)
三好 実人
Authorship:Principal investigator Grant type:Competitive
Other External Funds
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次世代無線通信に向けた高周波GaN系バイポーラトランジスタの研究開発
2023.05 - 2024.03
総務省 戦略的情報通信研究開発推進事業(SCOPE)
三好 実人
Authorship:Principal investigator Grant type:Competitive
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移動体への光無線給電システムの研究開発
2022 - 2024
国立研究開発法人 新エネルギー・産業技術総合開発機構(NEDO) 先導研究プログラム/エネルギー・環境新技術先導研究プログラム(エネ環)
上山 智(名城大学)
Authorship:Coinvestigator(s) Grant type:Competitive
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次世代無線通信システムに資する新構造・窒化物系バイポーラトランジスタの開発
2020.12 - 2023.03
国立研究開発法人 科学技術振興機構(JST) 研究成果最適展開支援プログラム(A-STEP)/産学共同(育成型)
三好 実人
Authorship:Principal investigator Grant type:Competitive
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ワイドギャップ半導体による格子整合ヘテロ構造を利用した新規・ミリ波用バイポーラトランジスタの試験的研究
2019.09 - 2020.08
国立研究開発法人 科学技術振興機構(JST) 研究成果最適展開支援プログラム(A-STEP)/機能検証フェーズ試験研究タイプ
三好 実人
Authorship:Principal investigator Grant type:Competitive
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GaNパワーデバイスの高性能化と高機能電源回路の開発
2019 - 2021
公益財団法人 科学技術交流財団 知の拠点あいち重点研究プロジェクトⅢ期/近未来自動車技術開発プロジェクト
清水 三聡(産業技術総合研究所)
Authorship:Coinvestigator(s) Grant type:Competitive
Social Activities
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半導体ナノテクノロジー:日本を支える最先端技術
Role(s): Lecturer
2023.08
Audience: High school students, General
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半導体ナノテクノロジー:日本を支える最先端技術
Role(s): Lecturer
2022.08
Audience: High school students, General
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イノベーション・ジャパン2021 ~大学見本市~
Role(s): Informant
2021.08
Audience: General
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半導体ナノテクノロジー:日本を支える最先端技術
Role(s): Lecturer
2021.08
Audience: General
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半導体ナノテクノロジー:日本を支える最先端技術
Role(s): Lecturer
2019.08
Audience: General
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半導体ナノテクノロジー:日本を支える最先端技術
Role(s): Lecturer
2018.08
Audience: General
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半導体ナノテクノロジー:日本を支える最先端技術
Role(s): Lecturer
2017.08
Audience: General
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イノベーション・ジャパン2017 ~大学見本市~
Role(s): Informant
2017.08
Audience: General
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半導体ナノテクノロジー:日本を支える最先端技術
Role(s): Lecturer
2016.08
Audience: General
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イノベーション・ジャパン2016 ~大学見本市~
Role(s): Informant
2016.08
Audience: General