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Affiliation Department |
Department of Electrical and Mechanical Engineering
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Title |
Associate Professor |
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External Link |
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KUBO Toshiharu
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Research Areas
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment / Electronic device
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials / Electronic device
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Nanotechnology/Materials / Applied physical properties
From School
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Keio University Faculty of Science and Engineering Department of applied physics and physico-informatics Graduated
1995.04 - 1999.03
Country：Japan
From Graduate School
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Keio University Graduate School, Division of Science and Engineering School of Fundamental Science and Technology Doctor's Course Completed
1999.04 - 2005.05
Country：Japan
External Career
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The University of Tokyo School of Engineering Part-time researcher for university or other academic organization
2005.10 - 2008.12
Country：Japan
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Hokkaido University Research Center for Integrated Quantum Electronics Part-time researcher for university or other academic organization
2008.12 - 2010.03
Country：Japan
Professional Memberships
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電子情報通信学会電子デバイス研究会
2018.04
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応用物理学会応用電子物性分科会
2014.04
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日本応用物理学会
2009.12
Qualification Acquired
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Person in Charge of High-pressure Gas Production Security (chemical machinery and frozen machine)
Research Career
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Electronic states at insulator/GaN interface
The Other Research Programs
Project Year： 2010.04
electronic properties at the insulator/GaN interface are investigated.
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Surface properties of AlGaN layers with high Al compositions
The Other Research Programs
Project Year： 2008.12 - 2010.03
Surface properties of AlGaN layers with high Al compositions were studied.
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Improvement of carbon compounds by fast neutron irradiation
The Other Research Programs
Project Year： 2005.10 - 2008.12
Improvement of physical properties of fullerene superconductor by fast neutron irradiation was studied.
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Study on the electrical conductivity of Graphite
The Other Research Programs
Project Year： 1998.04 - 2005.10
Papers
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Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer Reviewed
A. Mase, P. Dalapati, R. Hayafuji, T. Kubo, M. Miyoshi, T. Egawa
Semiconductor Science and Technology 38 095005-1 - 095005-6 2023.08
Language：English Publishing type：Research paper (scientific journal)
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Improved field-effect mobility in transfer-free graphene films synthesized via the metal agglomeration technique using high-crystallinity Ni catalyst films Reviewed
Toshiharu Kubo, Akira Takahashi, Makoto Miyoshi, Takashi Egawa
Applied Physics Express 14 116503 2021.10
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal) Publisher：IOPscience
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Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer Reviewed
PradipDalapati, KosukeYamamoto, ToshiharuKubo, TakashiEgawa, MakotoMiyoshi
Optik 245 167691 2021.07
Language：English Publishing type：Research paper (scientific journal) Publisher：Elsevier
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High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator Reviewed International journal
Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa, and Makoto Miyoshi
Journal of Vacuum Science & Technology B 37 041205-1 - 041205-4 2019.07
Language：English Publishing type：Research paper (scientific journal)
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Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition Reviewed International journal
Toshiharu Kubo, Takashi Egawa
Physica B 571 210 - 212 2019.07
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Trap state characterization of Al2O3/AlInGaN/GaN metal-insulator-semiconductor heterostructures Reviewed International journal
Debaleen Biswas, Naoki Torii, Hirotaka Fujita, Takahiro Yoshida, Toshiharu Kubo and Takashi Egawa
Semiconductor Science and Technology 34 055014-1 - 055014-6 2019.04
Language：English Publishing type：Research paper (scientific journal)
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Experimental evidence of the existence of multiple charged states at Al2O3/GaN interfaces Reviewed International journal
Noriyuki Taoka, Toshiharu Kubo, Toshikazu Yamada, Takashi Egawa and Mitsuaki Shimizu
Semiconductor science and Technology 34 025009-1 - 025009-7 2019.01
Language：English Publishing type：Research paper (scientific journal)
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Impacts of oxidants in atomic layer deposition method on Al2O3/GaN interface properties Reviewed
N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu
Jpn. J. Appl. Phys. 57 01AD04-1 - 01AD04-5 2017.12
Language：English Publishing type：Research paper (scientific journal)
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Electrical characteristics and interface properties of ALD-HfO2/AlGaN/GaN MIS-HEMTs fabricated with post-deposition annealing Reviewed International journal
Toshiharu Kubo, Takashi Egawa
Semiconductor Science and Technology 32 125016-1 - 125016-5 2017.11
Authorship：Lead author Language：English Publishing type：Research paper (scientific journal)
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Understanding of frequency dispersion in C-V curves of metal-oxide-semiconductor capacitor with wide-bandgap semiconductor Reviewed International journal
N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu
Microelectronic Engineering 178 182 - 185 2017.06
Language：English Publishing type：Research paper (scientific journal)
Presentations
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ALDにより形成した絶縁膜を有するAlGaN/GaN MIS-HFETに対する ゲートリセスエッチング後表面処理の効果
久保俊晴、江川孝志
電子情報通信学会11月研究会 2023.11 電子情報通信学会
Event date： 2023.11 - 2023.12
Language：Japanese Presentation type：Oral presentation (general)
Venue：アクト浜松
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Effects of surface treatments after gate recess etching on AlGaN/GaN MIS-HFETs with an ALD-SiO2/Al2O3 double insulator International conference
T. Kubo, T. Egawa
2023.11 JSAP
Event date： 2023.11
Language：English Presentation type：Oral presentation (general)
Venue：Fukuoka Sea Hawk Country：Japan
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極微細構造を有する厚いNiパターンの凝集現象を用いたサファイア基板上転写フリーグラフェンFETの作製
加藤一朗、久保俊晴、三好実人、江川孝志
第84回応用物理学会秋季学術講演会 2023.09 日本応用物理学会
Event date： 2023.09
Language：English Presentation type：Poster presentation
Venue：熊本城ホール
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極微細構造を有するNiパターンの凝集現象を用いたサファイア基板上転写フリーグラフェンFETの作製
加藤一朗、久保俊晴、三好実人、江川孝志
第70回応用物理学会春季学術講演会 2023.03 日本応用物理学会
Event date： 2023.03
Language：Japanese Presentation type：Poster presentation
Venue：上智大学
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Estimation of Electrical Characteristics of Gate-Recessed AlGaN/GaN MIS-HEMTs with Surface Treatment International conference
K. Toda, T. Kubo, T. Egawa
ISPlasma 2023 2023.03 JSAP
Event date： 2023.03
Language：English Presentation type：Oral presentation (general)
Venue：Gifu University Country：Japan
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Transfer-Free Graphene Synthesis on Sapphire Substrates Utilizing the Agglomeration Phenomenon of the Ni Pattern with Fine Structure International conference
I. Kato, T. Kubo, M. Miyoshi, T. Egawa
2023.03 JSAP
Event date： 2023.03
Language：English Presentation type：Oral presentation (general)
Venue：Gifu University Country：Japan
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リセス構造形成後表面処理を施したAlGaN/GaN MIS-HEMTの電気特性評価
戸田圭太郎, 久保俊晴, 江川孝志
電子情報通信学会11月研究会 2022.11 電子情報通信学会
Event date： 2022.11
Language：Japanese Presentation type：Oral presentation (general)
Venue：ウィンクあいち + オンライン Country：Japan
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Transfer-free graphene synthesis utilizing the agglomeration phenomenon of the Ni pattern Invited International conference
Toshiharu Kubo, Ichiro Kato, Makoto Miyoshi, Takashi Egawa
2022.10
Event date： 2022.10
Language：English Presentation type：Oral presentation (general)
Venue：Busan + Online Country：Korea, Republic of
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AlGaN/GaN MIS-HEMTにおけるリセス構造形成後表面処理の効果
戸田圭太郎, 久保俊晴, 江川孝志
第83回応用物理学会秋季学術講演会 2022.09 日本応用物理学会
Event date： 2022.09
Language：Japanese Presentation type：Oral presentation (general)
Venue：東北大学 + オンライン Country：Japan
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極微細構造を有するNiパターンの凝集現象を用いたサファイア基板上転写フリーグラフェン膜の作製
加藤一朗, 久保俊晴, 三好実人, 江川孝志
第83回応用物理学会秋季学術講演会 2022.09
Event date： 2022.09
Language：Japanese Presentation type：Poster presentation
Venue：東北大学 + オンライン Country：Japan
Industrial Property Rights
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ゲート絶縁膜の形成方法、および、ゲート絶縁膜
座間秀昭, 小林忠正, 久保俊晴, 江川孝志
Application no：2017－20109 Date applied：2017.02
Country of applicant：Domestic Country of acquisition：Domestic
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グラフェンデバイスおよびその製造方法
三好実人, 久保俊晴, 江川孝志
Application no：2015-212450 Date applied：2015.10
Country of applicant：Domestic Country of acquisition：Domestic
Awards
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ISPlasma2017/IC-PLANTS2017 Best Presentation Award
2017.03 ISPlasma2017/IC-PLANTS2017 Committee
N. Taoka, T. Kubo, T. Yamada, T. Egawa, M. Shimizu
Award type：Award from international society, conference, symposium, etc. Country：Japan
Scientific Research Funds Acquisition Results
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Si基板上GaN縦型パワーデバイスの低抵抗および高耐圧化に関する研究
Grant number：23H01464 2023.04 - 2026.03
日本学術振興会 科学研究費補助金 基盤研究(B)
Authorship：Principal investigator Grant type：Competitive
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極微細金属パターン付き基板による高性能低消費電力グラフェンFETの作製
2019.04 - 2022.03
科学研究費補助金 基盤研究(C)
Other External Funds
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極微細金属パターン付き基板による高性能低消費電力グラフェンFETの作製
2022.04 - 2023.03
名古屋工業大学 学内研究推進経費
Authorship：Principal investigator
Grant amount：\2000000 （ Direct Cost: \2000000 ）
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Si基板上GaNパワーデバイスの性能を向上させるゲート構造用絶縁膜の開発
2020.06 - 2021.03
民間財団等 内藤科学技術振興財団 助成金
Grant type：Competitive
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極微細金属パターン付き基板を用いた高性能グラフェン FET の作製
2019.04 - 2020.03
民間財団等 村田財学術振興財団第35回学術助成金
Grant type：Competitive
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新しいグラフェン合成プロセスの開発とエネルギー利用効率化への展開
2016.04 - 2017.03
民間財団等 東燃ゼネラル石油研究奨励・奨学財団研究助成
Grant type：Competitive
エネルギーの効率的な利用に向け、計算機で消費される電力の削減のため、２次元物質であるグラフェンデバイスの普及に向けたデバイス開発を
行う。
Past of Commissioned Research
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低炭素社会を実現する次世代パワーエレクトロニクスプロジェクト／GaNパワーデバイス等の実用化加速技術開発
2017.04 - 2020.03
政府機関 General Consignment Study
江川孝志
Authorship：Coinvestigator(s)
Past of Cooperative Research
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GaN-HEMTを高出力化するゲート絶縁膜プロセス開発に関する共同研究
2016.04 - 2017.03
株式会社アルバック Collaboration in Japan
GaN-HEMTパワーデバイスの実現へ向け、良好な特性を有するゲート絶縁膜の開発をアルバックと共同して行う。
Committee Memberships
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電子情報通信学会電子デバイス研究会 委員
2018.04
Committee type：Academic society
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日本応用物理学会 IWN2018(金沢)実行委員会・現地実行委員
2016.10 - 2018.11
Committee type：Academic society
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日本応用物理学会 IWUMD2017(福岡)実行委員会・寄付/展示委員
2016.10 - 2017.11
Committee type：Academic society
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応用物理学会応用電子物性分科会 幹事
2014.04
Committee type：Other
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ISPlasma2011実行委員会 実行委員
2010.11 - 2011.03
Committee type：Other
Social Activities
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計測分析に関する講演会
Role(s)： Lecturer
あいち産業科学技術総合センター あいち産業科学技術総合センター本部 講習会室 2016.12
Audience： Researchesrs
Type：Lecture