Affiliation Department |
Department of Electrical and Mechanical Engineering
|
Title |
Professor |
External Link |
EGAWA Takashi
|
|
Degree
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Master of Engineering ( Nagoya Institute of Technology )
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Doctor of Engineering ( Nagoya Institute of Technology )
Research Areas
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
From School
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Nagoya Institute of Technology Faculty of Engineering Graduated
- 1980.03
Country:Japan
From Graduate School
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Nagoya Institute of Technology Graduate School, Division of Engineering Doctor's Course Completed
- 1991.03
Country:Japan
Professional Memberships
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名古屋大学未来材料・システム研究所
2015.10 - 2018.03
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文部科学省科学技術政策研究所
2008.04 - 2012.03
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レーザー学会
1994.07
Research Career
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Heteroepitaxial growth on Si substrate and its application to devices
(not selected)
Project Year: 1991.04
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Optoelectronic devices by use of GaN-based masterials
(not selected)
Project Year: 1991.04
Papers
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GaN/InGaN gate for E-mode GaN HEMTs on Si Reviewed International journal
D. Biswas, T. Tsuboi and T. Egawa
IEEE EDL 2020.12
Authorship:Lead author Language:English Publishing type:Research paper (scientific journal)
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Mass production-ready characteristics of AlGaN/AlN/GaN high-electron-mobility transistor structures grown on 200-mm-diameter silicon substrates using metal-organic chemical vapor deposition International journal
K. Ikejiri, Y. Hiroyama, K. Kasahara, C. Hirooka, T. Osada, M. Tanaka, T. Takada and T. Egawa
Semicond. Sci. Technol. 2020.10
Language:English Publishing type:Research paper (scientific journal)
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Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures Reviewed International journal
P. Dalapati, S. Urata, T. Egawa
Superlattices and Microstructures 147 106709-1 - 106709-10 2020.09
Language:English Publishing type:Research paper (scientific journal)
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Electrical characterization of Si-doped conductive AlInN films grown nearly lattice-matched to c-plane GaN on sapphire by metalorganic chemical vapor deposition Reviewed International journal
M. Miyoshi, T. Nakabayashi, M. Yamanaka, T. Egawa and T. Takeuchi
J. Vac. Sci. Technol. B 38 ( 5 ) 052205-1 - 052205-5 2020.09
Language:English Publishing type:Research paper (scientific journal)
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Current-induced degradation process in (In)AlGaN-based deep-UV light-emitting diode fabricated on AlN/sapphire template Reviewed International journal
Pradip Dalapati, KosukeYamamoto, Takashi Egawa, Makoto Miyoshi
Optical Materials 109 110352-1 - 110352-6 2020.08
Language:English Publishing type:Research paper (scientific journal)
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MOCVD growth of over 150-nm-thick quaternary AlGaInN epitaxial films near alloy compositions lattice-matching to GaN on sapphire and their structural and optical characterization Reviewed International journal
M. Miyoshi, H. Harada, T. Egawa and T. Takeuchi
Physica Status Solidi A 1900597-1 - 1900597-6 2019.10
Language:English Publishing type:Research paper (scientific journal)
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High-breakdown-voltage AlGaN-channel metal-insulator-semiconductor heterostructure field-effect transistors employing a quaternary AlGaInN barrier layer and an Al2O3 gate insulator Reviewed International journal
Daiki Hosomi, Keita Furuoka, Heng Chen, Saki Saito, Toshiharu Kubo, Takashi Egawa and Makoto Miyoshi
J. Vac. Sci. Technol. B 37 ( 4 ) 041205-1 - 041205-4 2019.07
Language:English Publishing type:Research paper (scientific journal)
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Electron-spin-resonance studies of AlGaN/GaN MIS-HEMT structures with Al2O3 fabricated by atomic layer deposition Reviewed International journal
Toshiharu Kubo and Takashi Egawa
Physica B: Condensed Matter 571 210 - 212 2019.07
Language:English Publishing type:Research paper (scientific journal)
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Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si Reviewed International journal
Debaleen Biswas, Hirotaka Fujita, Naoki Torii and Takashi Egawa
J. Appl. Phys. 125 ( 22 ) 225707-1 - 225707-6 2019.06
Language:English Publishing type:Research paper (scientific journal)
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A 300 nm thick epitaxial AlInN film with a highly flat surface grown almost perfectly lattice-matched to c-plane free-standing GaN substrate Reviewed
M. Miyoshi, M. Yamanaka, T. Egawa and T. Takeuchi
Jpn. J. Appl. Phys. 58 SC1006-1 - SC1006-4 2019.04
Language:English Publishing type:Research paper (scientific journal)
Books and Other Publications
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パワーエレクトロニクスの新展開(普及版)
大橋弘道、江川孝志 他( Role: Contributor)
(株)シーエムシ―出版 2015.08 ( ISBN:978-4-7813-1029-9 )
Language:jpn Book type:Scholarly book
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次世代パワー半導体の高性能化とその産業展開
佐藤克己、江川孝志 他( Role: Contributor)
(株)シーエムシ―出版 2015.06 ( ISBN:978-4-7813-1076-3 )
Language:jpn Book type:Scholarly book
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2015パワーデバイス技術大全
江川孝志 他( Role: Joint author)
株式会社電子ジャーナル 2014.07
Language:jpn Book type:Scholarly book
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GaNパワー半導体を活用した研究開発テーマの発掘
江川孝志( Role: Joint author)
技術情報協会 2013.07
Language:jpn Book type:Scholarly book
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GaNパワーデバイスの技術展開
江川孝志他( Role: Joint author)
サイエンス&テクノロジー㈱ 2012.04 ( ISBN:978-4-86428-044-0 )
Language:jpn Book type:Scholarly book
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電子デバイス
-( Role: Joint author)
オーム社 1997.10
Language:jpn Book type:Textbook, survey, introduction
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Electronic Devices
( Role: Sole author)
Ohmsha Ltd. 1997.04
Language:jpn
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Ultrafast and Ultra-parallel Optoelectronics
( Role: Joint author)
Ohmsha Ltd. 1995.04
Language:jpn
Misc
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MOCVD法を用いたSi基板上GaN系パワーデバイス Invited Reviewed
江川孝志
11 ( 5 ) 260 - 263 2016.11
Authorship:Lead author Language:Japanese Publishing type:Article, review, commentary, editorial, etc. (scientific journal)
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Si基板上AlGaN/GaN HEMTを用いたパワーデバイス Invited Reviewed
江川孝志
51 ( 2 ) 98 - 100 2016.02
Authorship:Lead author Language:Japanese Publishing type:Article, review, commentary, editorial, etc. (scientific journal)
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ノーマリオフGaNトランジスタのパワーエレクトロニクス応用 Invited Reviewed
江川孝志
2 ( 6 ) 62 - 64 2015.08
Language:Japanese Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)
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GaN半導体の研究開発の動向と今後の展開
江川孝志
34 - 38 2013.10
Authorship:Lead author Language:Japanese Publishing type:Article, review, commentary, editorial, etc. (scientific journal) Publisher:㈱電気評論社
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Si基板上へのGaN単結晶の成長とデバイス応用
江川孝志
81 ( 6 ) 485 - 488 2012.06
Authorship:Lead author Language:Japanese Publishing type:Article, review, commentary, editorial, etc. (international conference proceedings) Publisher:応用物理学会
Presentations
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ALDにより成膜したSiO2/Al2O3 2層絶縁膜を用いたAlGaN/GaN MIS-HEMTの電気特性評価
横井駿一, 久保俊晴, 江川孝志
電子情報通信学会11月研究会
Event date: 2020.11
Language:Japanese Presentation type:Oral presentation (general)
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選択再成長オーミックコンタクトを用いた高耐圧AlGaNチャネルHFET
井上暁喜,原田紘希, 山中瑞樹, 江川孝志, 三好実人
電子情報通信学会11月研究会
Event date: 2020.11
Language:Japanese Presentation type:Oral presentation (general)
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光無線給電システムに向けたGaN系受光素子の検討
山本皓介, Pradip Dalapati, 江川孝志, 三好実人
電子情報通信学会11月研究会
Event date: 2020.11
Language:Japanese Presentation type:Oral presentation (general)
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エピタキシャルAlInN膜のp/n導電性制御に関する研究
中林泰希, 江川孝志, 三好実人, 竹内哲也
電子情報通信学会11月研究会
Event date: 2020.11
Language:Japanese Presentation type:Oral presentation (general)
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GaNに格子整合するc面AlInN薄膜の空間分解カソードルミネッセンス
李リヤン,嶋紘平, 山中瑞樹, 小島一信, 江川孝志, 竹内哲也, 三好実人, 秩父重英
第81回応用物理学会秋季学術講演会
Event date: 2020.09
Language:Japanese Presentation type:Oral presentation (general)
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ALD により成膜したSiO2/Al2O3 2層絶縁膜を用いたAlGaN/GaN MIS-HEMT の電気特性 Ⅱ
横井駿一, 久保俊晴, 江川孝志
第81回応用物理学会秋季学術講演会
Event date: 2020.09
Language:Japanese Presentation type:Oral presentation (general)
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GaNに格子整合するc面AlInN薄膜の空間分解陰極線ルミネッセンス
李リヤン、嶋紘平、山中瑞樹、小島一信、江川孝志、竹内哲也、三好実人、秩父重英
第67回応用物理学会春季学術講演会
Event date: 2020.03
Language:Japanese Presentation type:Oral presentation (general)
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ALDにより成膜したSiO2/Al2O3 2層絶縁膜を用いたAlGaN/GaN MIS-HEMTの電気特性
横井駿一, 古岡啓太, 久保俊晴, 江川孝志
第67回応用物理学会春季学術講演会
Event date: 2020.03
Language:Japanese Presentation type:Oral presentation (general)
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SLS層によるAlGaN/GaN HEMT構造の転位低減
浦田峻佑, キムヒョンス, 江川孝志
第67回応用物理学会春季学術講演会
Event date: 2020.03
Language:Japanese Presentation type:Poster presentation
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コンタクト抵抗を改善したAlGaNチャネルHFETのデバイス特性評価
三好実人, ChenHeng, 斉藤早紀, 井上暁喜, 江川孝志
第67回応用物理学会春季学術講演会
Event date: 2020.03
Language:Japanese Presentation type:Oral presentation (general)
Industrial Property Rights
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半導体装置およびその製造方法
大竹伸幸、星新一、小山和博、江川孝志
Applicant:株式会社デンソー、国立大学法人名古屋工業大学
Application no:特願2015-034230 Date applied:2015.02
Patent/Registration no:特許第6447231号 Date registered:2018.12 Date issued:2018.12
Country of applicant:Domestic Country of acquisition:Domestic
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オーミック特性を改善したノーマリオフ型窒化物半導体電界効果トランジスタ
分島彰男、江川孝志
Application no:特願2014-256754 Date applied:2014.12
Patent/Registration no:特許第6548065号 Date registered:2019.07 Date issued:2019.07
Country of applicant:Domestic Country of acquisition:Domestic
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半導体積層構造およびこれを用いた半導体素子
江川孝志
Applicant:江川孝志
Application no:特願2017-202448 Date applied:2013.07
Patent/Registration no:特許第6512669号 Date registered:2019.04 Date issued:2019.04
Country of applicant:Domestic Country of acquisition:Domestic
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半導体積層構造およびこれを用いた半導体素子
江川孝志
Application no:特願2013-156638 Date applied:2013.07
Patent/Registration no:特許第6265328号 Date registered:2018.01 Date issued:2018.01
Country of applicant:Domestic Country of acquisition:Domestic
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紫外線受光素子
分島彰男、江川孝志
Application no:特願2011-243007 Date applied:2011.11
Patent/Registration no:特許第6048718号 Date registered:2016.12 Date issued:2016.12
Country of applicant:Domestic Country of acquisition:Domestic
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III族窒化物積層基板
江川孝志、坂本 陵、伊藤統夫
Application no:特願2009-252982 Date applied:2009.11
Patent/Registration no:特許第5334057号 Date registered:2013.08 Date issued:2013.08
Country of applicant:Domestic Country of acquisition:Domestic
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半導体装置およびその製造方法
山本信幸、杉本重幸、江川孝志
Application no:2008-178786 Date applied:2008.07
Patent/Registration no:特許第5581471号 Date registered:2014.07 Date issued:2014.07
Country of applicant:Domestic Country of acquisition:Domestic
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半導体素子
江川孝志、三好実人、倉岡義孝
Application no:特願2006-227898 Date applied:2006.08
Patent/Registration no:特許第5415668号 Date registered:2013.11 Date issued:2013.11
Country of applicant:Domestic Country of acquisition:Domestic
Other research activities
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超高周波用窒化物半導体ヘテロ接合トランジスタの開発研究
2001.04
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InAlGaN/GaN ヘテロ構造の研究
2001.04
-
AlGaN/GaN HEMTのヘテロエピタキシャル成長技術に関する研究
2001.04
-
大口径Si基板上の超高周波AlGaN/GaN HEMTの研究開発
2001.04
-
有機金属気相成長法を用いた短波長フォトディテクターの研究開発
2001.04
-
電子デバイス用GaN系化合物半導体材料の研究開発
2001.04
-
有機金属気相成長法を用いたシリコン基板上の高輝度窒化ガリウム系発光ダイオードの研究開発
2001.04
-
窒化ガリウム系半導体を用いた青・緑・赤色発光ダイオードの研究開発
2001.04
-
高周波・電力用GaN系HEMTのヘテロエピタキシャル成長技術に関する研究開発
2001.04
-
有機金属気相成長法を用いた通信放送衛星用AlGaN/GaN HEMTの研究開発
2001.04
Awards
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第25回エレクトロニクスソサイエティ賞
2022.09 電子情報通信学会 シリコン基板上窒化物パワー半導体の先駆的研究
江川孝志
Award type:Award from Japanese society, conference, symposium, etc. Country:Japan
-
2021年日本結晶成長学会第16回業績賞および赤﨑 勇賞
2021.10 日本結晶成長学会 シリコン基板上窒化物パワー半導体の開拓及び実用化
江川孝志
Award type:Award from Japanese society, conference, symposium, etc. Country:Japan
-
Best Presentation Award at ISPlasma2017/IC-PLANT2017
2017.03 ISPlasma2017/IC-PLANT2017 Organizing Committee Impacts of Oxidants for ALD Process on Al2O3/GaN Interface Properties
N. Taoka, T. Kubo, T. Yamada, T. Egawa and M. Shimizu
Award type:Award from international society, conference, symposium, etc. Country:Japan
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第13回産学官連携功労者表彰科学技術政策担当大臣賞
2015.08 内閣府
江川孝志
Award type:International academic award (Japan or overseas) Country:Japan
-
第38回(平成25年)井上春成賞受賞
2013.07 井上春成賞委員会
江川孝志
Award type:Award from publisher, newspaper, foundation, etc. Country:Japan
-
日本結晶成長学会賞第17回技術賞
2010.08 日本結晶成長学会
江川孝志、梅野正義
Award type:Award from Japanese society, conference, symposium, etc. Country:Japan
-
平成22年度科学技術分野の文部科学大臣表彰科学技術賞(科学技術振興部門)
2010.04 文部科学省
江川孝志
Country:Japan
-
Award of the Laser Society of Japan
1996.05
Award type:Award from Japanese society, conference, symposium, etc. Country:Japan
-
Award of the Kodaira Memorial, Japan
1991.06
Award type:Award from publisher, newspaper, foundation, etc. Country:Japan
-
Award of the Institute of Electrical Engineers of Japan
1991.05
Award type:Award from Japanese society, conference, symposium, etc. Country:Japan
Past of Commissioned Research
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省エネ用縦型GaN/Siパワーデバイスに関する基盤技術開発
2016.01 - 2016.06
政府機関 General Consignment Study
Authorship:Principal investigator
Committee Memberships
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応用物理学会 ISPlasma 2020/IC-PLANTS2020組織委員会委員
2019.04 - 2020.03
Committee type:Academic society
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応用物理学会 ISPlasma 2019/IC-PLANTS2019組織委員会委員
2018.04 - 2019.03
Committee type:Academic society
-
応用物理学会 ISPlasma 2018/IC-PLANTS2018組織委員会委員
2017.04 - 2018.03
Committee type:Academic society
-
応用物理学会 ISPlasma 2017/IC-PLANTS2017組織委員会委員
2016.04 - 2017.03
Committee type:Academic society
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名古屋大学未来材料・システム研究所 共同利用・共同研究委員会委員
2015.10 - 2018.03
Committee type:Other
-
応用物理学会 ISPlasma 2015/IC-PLANTS2015編集委員会委員
2014.07 - 2016.03
Committee type:Academic society
-
文部科学省科学技術政策研究所 専門調査委員
2008.04
Committee type:Other
Social Activities
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半導体ナノテクノロジー:日本を支える最先端技術
Role(s): Informant, Planner, Organizing member
2019.08
Audience: Teachers, Guardians, Researchesrs, General, Scientific, Company, Civic organization, Governmental agency, Media
Type:Lecture
-
半導体ナノテクノロジー:日本を支える最先端技術
Role(s): Informant, Planner, Organizing member
2018.08
Audience: Teachers, Guardians, Researchesrs, General, Scientific, Company, Civic organization, Governmental agency, Media
Type:Lecture
-
名工大テクノフェア2017
Role(s): Informant
2017.11
Audience: College students, Graduate students, Teachers, Researchesrs, General, Company, Governmental agency, Media
-
イノベーション・ジャパン2017
Role(s): Advisor, Informant, Organizing member
2017.08 - 2017.09
Audience: Teachers, Researchesrs, General, Scientific, Company, Governmental agency, Media
Type:Lecture
-
愛知地域スーパークラスター成果報告会
Role(s): Lecturer
2016.11
Audience: Teachers, Researchesrs, General, Scientific, Company, Governmental agency
-
名工大テクノフェア2016
Role(s): Advisor, Informant
2016.11
Audience: Graduate students, Teachers, Researchesrs, General, Scientific, Company, Governmental agency
-
半導体ナノテクノロジー:日本を支える最先端技術
Role(s): Appearance, Lecturer, Planner
2016.08
Audience: General
Type:Lecture
-
イノベーション・ジャパン2016
Role(s): Advisor, Informant
2016.08
Audience: Teachers, Researchesrs, General, Scientific, Company, Governmental agency, Media
-
国際ワークショップ「The 7th International Joint Workshop on Nitride Semiconductors and Devices」の開催
Role(s): Lecturer, Advisor, Planner, Organizing member
2016.04
Audience: Graduate students, Researchesrs, Company
-
GaN/Si結晶成長及びパワーデバイスへの応用
Role(s): Lecturer
2015.11
Audience: Researchesrs, General, Scientific, Company
Type:Seminar, workshop