Awards - MIYOSHI Makoto
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電子情報通信学会 電子デバイス (ED) 研究専門委員会 論文発表奨励賞
2024.01 電子情報通信学会 エレクトロニクスソサエティ 電子デバイス (ED) 研究専門委員会 四元混晶AlGaInNエミッタとp型GaInNベースを用いたGaN系HBTの作製
滝本 将也、間瀬 晃、小嶋 智輝、江川 孝志、三好 実人
Award type：Award from Japanese society, conference, symposium, etc. Country：Japan
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Outstanding Poster Award
2023.11 14th International Conference on Nitride Semiconductors, ICNS-14 High-efficiency GaInN-based photovoltaic cells on free-standing GaN substrate for optical wireless power transmission system
Takahiro Fujisawa, Nan Hu, Tomoki Kojima, Takashi Egawa, Makoto Miyoshi
Award type：Award from international society, conference, symposium, etc.
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IOP Outstanding Reviewer Awards 2022
2023.03 IOP publishing
Makoto Miyoshi
Award type：Honored in official journal of a scientific society, scientific journal Country：Japan
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The Best Poster Presentation
2022.10 International Workshop on Nitride Semiconductors, IWN 2022 AlGaInN/GaN HEMTs on single-crystal AlN substrate
Sakura Tanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa, Makoto Miyoshi
Award type：Award from international society, conference, symposium, etc.
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名古屋工業大学教員評価優秀賞
2022.06 名古屋工業大学
三好 実人
Country：Japan
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IOP Outstanding Reviewer Awards 2021
2022.04 IOP publishing
Makoto Miyoshi
Award type：Honored in official journal of a scientific society, scientific journal Country：Japan
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The ISPlasma Prize, The 2022 Best Short Presentation Awards
2022.03 The ISPlasma Prize 2022 Effect of a Thin AlN Layer Inserted into the GaN Drift Layers on Reverse Breakdown Behavior for Fully Vertical GaN-on-Si Schottky Barrier Diodes
Akira Mase, Pradip Dalapati, Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa
Award type：Award from international society, conference, symposium, etc. Country：Japan
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Editor's Pick Article
2021.09 AIP Advances Improved epilayer qualities and electrical characteristics for GaInN multiple-quantum-well photovoltaic cells and their operation under artificial sunlight and monochromatic light illuminations
Makoto Miyoshi, Taiki Nakabayashi, Kosuke Yamamoto, Pradip Dalapati, Takashi Egawa
Award type：Honored in official journal of a scientific society, scientific journal
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電子情報通信学会 電子デバイス (ED) 研究専門委員会 論文発表奨励賞
2019.01 電子情報通信学会 エレクトロニクスソサエティ 電子デバイス (ED) 研究専門委員会 歪み制御AlGaInNバリア層を備えた耐圧2.5kV級AlGaNチャネルHFET
細見 大樹、古岡 啓太、陳 珩、斉藤 早紀、久保 俊晴、江川 孝志、三好 実人
Award type：Award from Japanese society, conference, symposium, etc. Country：Japan
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名古屋工業大学教員評価優秀賞
2018.06 名古屋工業大学
三好 実人
Country：Japan
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Editor's Choice
2017 Solid-State Electronics Effect of well layer thickness on quantum and energy conversion efficiencies for InGaN/GaN multiple quantum well solar cell
Makoto Miyoshi, Tatsuya Tsutsumi, Tomoki Kabata, Takuma Mori, Takashi Egawa
Award type：Honored in official journal of a scientific society, scientific journal
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Spotlights
2015 Applied Physics Express Nearly lattice-matched InAlN/AlGaN two-dimensional electron gas heterostructures grown by metalorganic chemical vapor deposition
Makoto Miyoshi, Shu Fujita, Takashi Egawa
Award type：Honored in official journal of a scientific society, scientific journal
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