Affiliation Department |
Department of Electrical and Mechanical Engineering
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Title |
Associate Professor |
External Link |
WAKEJIMA Akio
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Research Career
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Si基板上のGaN系HEMTの高周波特性
(not selected)
Project Year: 2014.04 - 2017.03
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レーザ光を用いたGaNの活性化
(not selected)
Project Year: 2013.04 - 2014.03
Papers
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Transient thermal analysis of GaN HEMT under TDD-LTE signal operation Reviewed
Shunsuke Ito, Yoichi Tsuchiya, Atsushi Tanaka, Tadatomo Suga, Nora T. Martinez, Akio Wakejima
2023 Asia-Pacific Microwave Conference (APMC) 2023.11
Authorship:Corresponding author Language:English Publishing type:Research paper (international conference proceedings)
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Low Thermal Resistance of GaN Devices with Bi-layer Highly Thermal-Conductive Graphite Carbon Reviewed
2023.09
Authorship:Last author, Corresponding author
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RF characteristics of 150-nm AlGaN/GaN high electron mobility transistors fabricated using i-line stepper lithography
Ando, Y., Takahashi, H., Makisako, R., Wakejima, A. and Suda, J.
Electron. Lett. 59 e12798 2023.05
DOI: 10.1049/ell2.12798
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AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications Invited Reviewed International journal
Akio WAKEJIMA, Arijit BOSE, Debaleen BISWAS, Shigeomi HISHIKI, Sumito OUCHI, Koichi KITAHARA, and Keisuke KAWAMURA
IEICE Trans. Electronics E105.C 457 - 465 2022.10
Authorship:Lead author, Corresponding author Language:English Publishing type:Research paper (scientific journal)
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Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex-situ regrown AlGaN layer Reviewed International journal
Baratov, Ali; Kawabata, Shinsaku; Urano, Shun; Nagase, Itsuki; Ishiguro, Masaki; Maeda, Shogo; Igarashi, Takahiro; Nezu, Toi; Yatabe, Zenji; Matys, Maciej; KACHI, Tetsu; adamowicz, boguslawa; WAKEJIMA, Akio; Kuzuhara, Masaaki; YAMAMOTO, Akio; Asubar, Joel
Applied Physics Express 15 104002 2022.09
Language:English Publishing type:Research paper (scientific journal)
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An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs using Rational Functions and Dependent Current Sources Reviewed International coauthorship International journal
A. Jadhav, T. Ozawa, A. Baratov, J. T. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, S. Nitta, Y. Honda, H. Amano, S. Roy and B. Sarkar
IEEE Journal of the Electron Devices Society 10 797 - 807 2022.09
Language:English Publishing type:Research paper (scientific journal)
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Evaluation of electroluminescence of AlGaN/GaN HEMT on free-standing GaN substrate Reviewed International journal
Ma, Qiang; Ando, Yuji; Tanaka, Atsushi; WAKEJIMA, Akio
Applied Physics Express 15 094004 2022.09
Authorship:Last author, Corresponding author Language:English Publishing type:Research paper (scientific journal)
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Laser slice thinning ofGaN‑on‑GaN high electron mobility transistors Reviewed International journal
Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, YutoAndo, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, YujiAndo, HiroshiAmano
Scientific Reports 76 7363 2022.05
Language:English Publishing type:Research paper (scientific journal)
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Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate Reviewed International journal
Q. Ma, S. Urano, A. Tanaka, Y. Ando and A. Wakejima,
IEEE Journal of the Electron Devices Society 10 297 - 300 2022.03
Authorship:Last author, Corresponding author Language:English Publishing type:Research paper (scientific journal)
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Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si Reviewed International journal
Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, and Akio Wakejima
IEICE ELEX 19 20210563 2022.01
Authorship:Last author, Corresponding author Language:English Publishing type:Research paper (scientific journal)
Books and Other Publications
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空間伝送型ワイヤレス給電技術の最前線
篠原真毅( Role: Joint author)
シーエムシー出版 2021.05 ( ISBN:978-4-7813-1603-1 )
Total pages:283 Responsible for pages:20 Language:jpn Book type:Scholarly book
Misc
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次世代移動体通信用GaNトランジスタ技術 Invited
分島 彰男
2021.11
Authorship:Lead author, Corresponding author Language:Japanese Publishing type:Lecture material (seminar, tutorial, course, lecture, etc.)
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GaN系HEMTを用いたマイクロ波無線電力伝送整流用ダイオード Invited
分島 彰男
2020.11
Authorship:Lead author, Corresponding author Language:Japanese Publishing type:Lecture material (seminar, tutorial, course, lecture, etc.)
Presentations
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Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Process
Yuji Ando1 , Kensuke Oishi1 , Hidemasa Takahashi1 , Ryutaro Makisako1 , Akio Wakejima2 , Jun Suda1
The 14th International Conference on Nitride Semiconductors (ICNS-14) 2023.11
Event date: 2023.11
Language:English Presentation type:Oral presentation (general)
Venue:Fukuoka
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Microwave Power Performance of AlGaN/GaN HEMT on Semi-insulating Mndoped GaN Substrate
Tomoharu Sugino1 , Kenji Osaki1 , Kentaro Nonaka2 , Tomohiko Sugiyama2 , Yoshitaka Kuraoka2 , Akio Wakejima1
The 14th International Conference on Nitride Semiconductors (ICNS-14) 2023.11
Event date: 2023.11
Language:English Presentation type:Oral presentation (general)
Venue:Fukuoka
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Improvement of Breakdown Voltage by Utilizing Moderately-Doped Contact Layers in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification
Tomoya Watanabe1 , Hidemasa Takahashi1 , Akio Wakejima2 , Yuji Ando1,3, Jun Suda1,
The 14th International Conference on Nitride Semiconductors (ICNS-14) 2023.11
Event date: 2023.11
Language:English Presentation type:Oral presentation (general)
Venue:Fukuoka
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GaN HEMTの実測温度特性を用いた変調動作下の熱過渡特性解析
伊東 俊祐1、土屋 洋一1、田中 敦之2、須賀 唯知3、分島 彰男1
第84回応用物理学会秋季学術講演会 2023.09
Event date: 2023.09
Language:Japanese Presentation type:Oral presentation (general)
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二層カーボンコンポジット高熱伝導材によるGaNデバイスの低熱抵抗化
大崎 賢司1、土屋 洋一1、齊藤 裕人1、田中 敦之2、須賀 唯知3、マルティネス ノラ3、竹馬 克洋4、分島 彰男
第84回応用物理学会秋季学術講演会 2023.09
Event date: 2023.09
Language:Japanese Presentation type:Oral presentation (general)
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サーマルロックインによるGaN HEMTのゲートリーク電流箇所の同定
崎田 由樹1、小林 久雄2、馬 強1、齊藤 裕人1、大崎 賢司1、伊東 俊祐1、分島 彰男1
第70回応用物理学会春季学術講演会 2023.03
Event date: 2023.03
Language:Japanese Presentation type:Oral presentation (general)
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マイクロ波整流用AlGaN/GaNワイドリセス構造ゲーテッドアノードダイオードの高耐圧化に向けた中濃度コンタクト層の活用
渡邉 智也1、高橋 英匡1、安藤 裕二1,2、分島 彰男3、須田 淳1,2
第70回応用物理学会春季学術講演会 2023.03
Event date: 2023.03
Language:Japanese Presentation type:Oral presentation (general)
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エッチング停止位置検出層の導入によるゲートリセス構造AlGaN/GaN HEMTのしきい値電圧制御性の向上
大石 健介1、高橋 英匡1、安藤 裕二1,2、分島 彰男3、須田 淳
第70回応用物理学会春季学術講演会 2023.03
Event date: 2023.03
Language:Japanese Presentation type:Oral presentation (general)
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Gated-Anode AlGaN/GaN Diode for Microwave Wireless Power Transfer International conference
Akio Wakejima
2021 Taiwan Wireless Power Transfer International Workshop
Event date: 2021.09
Language:English Presentation type:Oral presentation (invited, special)
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SiC基板上GaN HEMTのfilm stressとEL発光色
浦野 紫陽1、馬 強1、安藤 裕二2、田中 敦之2、分島 彰男1
第82回応用物理学会秋季学術講演会
Event date: 2021.09
Language:Japanese Presentation type:Oral presentation (general)
Awards
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JSAP Outstanding Reviewer Awards
2022.04
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IEEE Senior Member
2022.01
Other External Funds
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地球と宇宙で使える 24GHz 高効率大電力伝送システム及び新規GaN 系整流 素子の開発
2023.12 - 2025.11
国立研究開発法人宇宙航空研究開発機構 宇宙探査イノベーションハブ RFP10
Authorship:Principal investigator Grant type:Competitive
Grant amount:\1700000 ( Direct Cost: \1700000 、 Indirect Cost:\1870000 )