WAKEJIMA Akio

写真a

Affiliation Department

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering

Title

Associate Professor

External Link

Degree

  • 博士(工学) ( 2007.09   大阪大学 )

 

Research Career

  • Si基板上のGaN系HEMTの高周波特性

    (not selected)  

    Project Year: 2014.04 - 2017.03

  • レーザ光を用いたGaNの活性化

    (not selected)  

    Project Year: 2013.04 - 2014.03

Papers

  • AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications Invited Reviewed International journal

    Akio WAKEJIMA, Arijit BOSE, Debaleen BISWAS, Shigeomi HISHIKI, Sumito OUCHI, Koichi KITAHARA, and Keisuke KAWAMURA

    IEICE Trans. Electronics   E105.C    457 - 465   2022.10

     More details

    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  • Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex-situ regrown AlGaN layer Reviewed International journal

    Baratov, Ali; Kawabata, Shinsaku; Urano, Shun; Nagase, Itsuki; Ishiguro, Masaki; Maeda, Shogo; Igarashi, Takahiro; Nezu, Toi; Yatabe, Zenji; Matys, Maciej; KACHI, Tetsu; adamowicz, boguslawa; WAKEJIMA, Akio; Kuzuhara, Masaaki; YAMAMOTO, Akio; Asubar, Joel

    Applied Physics Express   15   104002   2022.09

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs using Rational Functions and Dependent Current Sources Reviewed International coauthorship International journal

    A. Jadhav, T. Ozawa, A. Baratov, J. T. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, S. Nitta, Y. Honda, H. Amano, S. Roy and B. Sarkar

    IEEE Journal of the Electron Devices Society   10   797 - 807   2022.09

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Evaluation of electroluminescence of AlGaN/GaN HEMT on free-standing GaN substrate Reviewed International journal

    Ma, Qiang; Ando, Yuji; Tanaka, Atsushi; WAKEJIMA, Akio

    Applied Physics Express   15   094004   2022.09

     More details

    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  • Laser slice thinning ofGaN‑on‑GaN high electron mobility transistors Reviewed International journal

    Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, YutoAndo, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, YujiAndo, HiroshiAmano

    Scientific Reports   76   7363   2022.05

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate Reviewed International journal

    Q. Ma, S. Urano, A. Tanaka, Y. Ando and A. Wakejima,

    IEEE Journal of the Electron Devices Society   10   297 - 300   2022.03

     More details

    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  • Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si Reviewed International journal

    Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, and Akio Wakejima

    IEICE ELEX   19   20210563   2022.01

     More details

    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  • Dependence of Electrical Characteristics on Epitaxial Layer Structure of AlGaN/GaN HEMTs Fabricated on Freestanding GaN Substrates Reviewed International journal

    Y. Ando, R. Makisako, H. Takahashi, A. Wakejima and J. Suda

    IEEE Transactions on Electron Devices   69   88   2021.11

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Modified Small Signal Circuit of AlGaN/GaN MOS-HEMTs Using Rational Functions Reviewed International journal

    Jadhav, Aakash and Ozawa, Takashi and Baratov, Ali and Asubar, Joel T. and Kuzuhara, Masaaki and Wakejima, Akio and Yamashita, Shunpei and Deki, Manato and Nitta, Shugo and Honda, Yoshio and Amano, Hiroshi and Roy, Sourajeet and Sarkar, Biplab

    IEEE Transactions on Electron Devices   68   6059   2021.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

  • Impact of Film Stress of Field-Plate Dielectric on Electric Characteristics of GaN-HEMTs Reviewed International journal

    Yuji Ando; Hidemasa Takahashi; Qiang Ma; Akio Wakejima; Jun Suda

    IEEE Transactions on Electron Devices   2020.10

     More details

    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1109/TED.2020.3029540

display all >>

Books and Other Publications

  • 空間伝送型ワイヤレス給電技術の最前線

    篠原真毅( Role: Joint author)

    シーエムシー出版  2021.05  ( ISBN:978-4-7813-1603-1

     More details

    Total pages:283   Responsible for pages:20   Language:jpn   Book type:Scholarly book

Misc

  • 次世代移動体通信用GaNトランジスタ技術 Invited

    分島 彰男

    2021.11

     More details

    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Lecture material (seminar, tutorial, course, lecture, etc.)  

  • GaN系HEMTを用いたマイクロ波無線電力伝送整流用ダイオード Invited

    分島 彰男

    2020.11

     More details

    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Lecture material (seminar, tutorial, course, lecture, etc.)  

Presentations

  • Gated-Anode AlGaN/GaN Diode for Microwave Wireless Power Transfer International conference

    Akio Wakejima

    2021 Taiwan Wireless Power Transfer International Workshop 

     More details

    Event date: 2021.09

    Language:English   Presentation type:Oral presentation (invited, special)  

  • SiC基板上GaN HEMTのfilm stressとEL発光色

    浦野 紫陽1、馬 強1、安藤 裕二2、田中 敦之2、分島 彰男1

    第82回応用物理学会秋季学術講演会 

     More details

    Event date: 2021.09

    Language:Japanese   Presentation type:Oral presentation (general)  

  • GaNと高熱伝導カーボンコンポジット系材料の接合試料における過渡温度評価

    齊藤 裕人1、福井 青空1、小畑 智弘1、田中 敦之2、須賀 唯知3、竹内 魁3、分島 彰男1

    第82回応用物理学会秋季学術講演会 

     More details

    Event date: 2021.09

    Language:Japanese   Presentation type:Oral presentation (general)  

  • 異方性熱伝導カーボン材の過渡熱特性の測定

    小畑 智弘1、福井 青空1、齊藤 裕人1、Li Lei1、分島 彰男1

    第68回応用物理学会春季学術講演会 

     More details

    Event date: 2021.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • ゲートリセス構造GaN HEMT を用いたゲーテッドアノード型ダイオードの電気的特性

    高橋 英匡1、安藤 裕二1、生島 百恵3、分島 彰男3、須田 淳1,2

    第68回応用物理学会春季学術講演会 

     More details

    Event date: 2021.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • i線ステッパーを用いた150 nmゲートAlGaN/GaN HEMTの作製

    安藤 裕二1、高橋 英匡1、分島 彰男3、須田 淳1,2

    第68回応用物理学会春季学術講演会 

     More details

    Event date: 2021.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • AlGaN/GaN ホール効果測定素子の電流-電圧特性の基板依存性

    田中 大貴1、分島 彰男3、安藤 裕二1、須田 淳1,2

    第68回応用物理学会春季学術講演会 

     More details

    Event date: 2021.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • GaN系HEMTを用いたマイクロ波無線電力伝送整流用ダイオード Invited

    分島 彰男

    MWE2020 

     More details

    Event date: 2020.11 - 2020.12

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

  • Gated-Anode GaN HEMT Based Diode for Microwave Wireless Power Transfer International conference

    Akio Wakejima

    Wireless Power Week 2020 

     More details

    Event date: 2020.11

    Language:English   Presentation type:Oral presentation (general)  

  • 「窒化ガリウム(GaN)により実現可能域にきたマイクロ波電力伝送」 Invited International conference

    分島 彰男

    第12回アカデミックナイト 

     More details

    Event date: 2020.11

    Language:Japanese   Presentation type:Public lecture, seminar, tutorial, course, or other speech  

display all >>

Awards

  • JSAP Outstanding Reviewer Awards

    2022.04  

  • IEEE Senior Member

    2022.01