WAKEJIMA Akio

写真a

Affiliation Department

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering

Title

Associate Professor

External Link

Degree

  • 博士(工学) ( 2007.09   大阪大学 )

 

Research Career

  • Si基板上のGaN系HEMTの高周波特性

    (not selected)  

    Project Year: 2014.04 - 2017.03

  • レーザ光を用いたGaNの活性化

    (not selected)  

    Project Year: 2013.04 - 2014.03

Papers

  • Transient thermal analysis of GaN HEMT under TDD-LTE signal operation Reviewed

    Shunsuke Ito, Yoichi Tsuchiya, Atsushi Tanaka, Tadatomo Suga, Nora T. Martinez, Akio Wakejima

    2023 Asia-Pacific Microwave Conference (APMC)   2023.11

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (international conference proceedings)  

  • Low Thermal Resistance of GaN Devices with Bi-layer Highly Thermal-Conductive Graphite Carbon Reviewed

    2023.09

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    Authorship:Last author, Corresponding author  

  • RF characteristics of 150-nm AlGaN/GaN high electron mobility transistors fabricated using i-line stepper lithography

    Ando, Y., Takahashi, H., Makisako, R., Wakejima, A. and Suda, J.

    Electron. Lett.   59   e12798   2023.05

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  • AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications Invited Reviewed International journal

    Akio WAKEJIMA, Arijit BOSE, Debaleen BISWAS, Shigeomi HISHIKI, Sumito OUCHI, Koichi KITAHARA, and Keisuke KAWAMURA

    IEICE Trans. Electronics   E105.C    457 - 465   2022.10

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  • Evidence of reduced interface states in Al2O3/AlGaN MIS structures via insertion of ex-situ regrown AlGaN layer Reviewed International journal

    Baratov, Ali; Kawabata, Shinsaku; Urano, Shun; Nagase, Itsuki; Ishiguro, Masaki; Maeda, Shogo; Igarashi, Takahiro; Nezu, Toi; Yatabe, Zenji; Matys, Maciej; KACHI, Tetsu; adamowicz, boguslawa; WAKEJIMA, Akio; Kuzuhara, Masaaki; YAMAMOTO, Akio; Asubar, Joel

    Applied Physics Express   15   104002   2022.09

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    Language:English   Publishing type:Research paper (scientific journal)  

  • An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs using Rational Functions and Dependent Current Sources Reviewed International coauthorship International journal

    A. Jadhav, T. Ozawa, A. Baratov, J. T. Asubar, M. Kuzuhara, A. Wakejima, S. Yamashita, M. Deki, S. Nitta, Y. Honda, H. Amano, S. Roy and B. Sarkar

    IEEE Journal of the Electron Devices Society   10   797 - 807   2022.09

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Evaluation of electroluminescence of AlGaN/GaN HEMT on free-standing GaN substrate Reviewed International journal

    Ma, Qiang; Ando, Yuji; Tanaka, Atsushi; WAKEJIMA, Akio

    Applied Physics Express   15   094004   2022.09

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  • Laser slice thinning ofGaN‑on‑GaN high electron mobility transistors Reviewed International journal

    Atsushi Tanaka, Ryuji Sugiura, Daisuke Kawaguchi, Yotaro Wani, Hirotaka Watanabe, Hadi Sena, YutoAndo, Yoshio Honda, Yasunori Igasaki, Akio Wakejima, YujiAndo, HiroshiAmano

    Scientific Reports   76   7363   2022.05

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    Language:English   Publishing type:Research paper (scientific journal)  

  • Bias-Dependence of Electroluminescence in AlGaN/GaN High-Electron-Mobility Transistors on SiC Substrate Reviewed International journal

    Q. Ma, S. Urano, A. Tanaka, Y. Ando and A. Wakejima,

    IEEE Journal of the Electron Devices Society   10   297 - 300   2022.03

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

  • Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si Reviewed International journal

    Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura, and Akio Wakejima

    IEICE ELEX   19   20210563   2022.01

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

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Books and Other Publications

  • 空間伝送型ワイヤレス給電技術の最前線

    篠原真毅( Role: Joint author)

    シーエムシー出版  2021.05  ( ISBN:978-4-7813-1603-1

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    Total pages:283   Responsible for pages:20   Language:jpn   Book type:Scholarly book

    researchmap

Misc

  • 次世代移動体通信用GaNトランジスタ技術 Invited

    分島 彰男

    2021.11

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Lecture material (seminar, tutorial, course, lecture, etc.)  

  • GaN系HEMTを用いたマイクロ波無線電力伝送整流用ダイオード Invited

    分島 彰男

    2020.11

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    Authorship:Lead author, Corresponding author   Language:Japanese   Publishing type:Lecture material (seminar, tutorial, course, lecture, etc.)  

Presentations

  • Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Process

    Yuji Ando1 , Kensuke Oishi1 , Hidemasa Takahashi1 , Ryutaro Makisako1 , Akio Wakejima2 , Jun Suda1

    The 14th International Conference on Nitride Semiconductors (ICNS-14)  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka  

  • Microwave Power Performance of AlGaN/GaN HEMT on Semi-insulating Mndoped GaN Substrate

    Tomoharu Sugino1 , Kenji Osaki1 , Kentaro Nonaka2 , Tomohiko Sugiyama2 , Yoshitaka Kuraoka2 , Akio Wakejima1

    The 14th International Conference on Nitride Semiconductors (ICNS-14)  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka  

  • Improvement of Breakdown Voltage by Utilizing Moderately-Doped Contact Layers in AlGaN/GaN Gated-Anode Diodes for Microwave Rectification

    Tomoya Watanabe1 , Hidemasa Takahashi1 , Akio Wakejima2 , Yuji Ando1,3, Jun Suda1,

    The 14th International Conference on Nitride Semiconductors (ICNS-14)  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka  

  • GaN HEMTの実測温度特性を用いた変調動作下の熱過渡特性解析

    伊東 俊祐1、土屋 洋一1、田中 敦之2、須賀 唯知3、分島 彰男1

    第84回応用物理学会秋季学術講演会  2023.09 

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    Event date: 2023.09

    Language:Japanese   Presentation type:Oral presentation (general)  

  • 二層カーボンコンポジット高熱伝導材によるGaNデバイスの低熱抵抗化

    大崎 賢司1、土屋 洋一1、齊藤 裕人1、田中 敦之2、須賀 唯知3、マルティネス ノラ3、竹馬 克洋4、分島 彰男

    第84回応用物理学会秋季学術講演会  2023.09 

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    Event date: 2023.09

    Language:Japanese   Presentation type:Oral presentation (general)  

  • サーマルロックインによるGaN HEMTのゲートリーク電流箇所の同定

    崎田 由樹1、小林 久雄2、馬 強1、齊藤 裕人1、大崎 賢司1、伊東 俊祐1、分島 彰男1

    第70回応用物理学会春季学術講演会  2023.03 

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    Event date: 2023.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • マイクロ波整流用AlGaN/GaNワイドリセス構造ゲーテッドアノードダイオードの高耐圧化に向けた中濃度コンタクト層の活用

    渡邉 智也1、高橋 英匡1、安藤 裕二1,2、分島 彰男3、須田 淳1,2

    第70回応用物理学会春季学術講演会  2023.03 

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    Event date: 2023.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • エッチング停止位置検出層の導入によるゲートリセス構造AlGaN/GaN HEMTのしきい値電圧制御性の向上

    大石 健介1、高橋 英匡1、安藤 裕二1,2、分島 彰男3、須田 淳

    第70回応用物理学会春季学術講演会  2023.03 

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    Event date: 2023.03

    Language:Japanese   Presentation type:Oral presentation (general)  

  • Gated-Anode AlGaN/GaN Diode for Microwave Wireless Power Transfer International conference

    Akio Wakejima

    2021 Taiwan Wireless Power Transfer International Workshop 

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    Event date: 2021.09

    Language:English   Presentation type:Oral presentation (invited, special)  

  • SiC基板上GaN HEMTのfilm stressとEL発光色

    浦野 紫陽1、馬 強1、安藤 裕二2、田中 敦之2、分島 彰男1

    第82回応用物理学会秋季学術講演会 

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    Event date: 2021.09

    Language:Japanese   Presentation type:Oral presentation (general)  

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Awards

  • JSAP Outstanding Reviewer Awards

    2022.04  

  • IEEE Senior Member

    2022.01  

Other External Funds

  • 地球と宇宙で使える 24GHz 高効率大電力伝送システム及び新規GaN 系整流 素子の開発

    2023.12 - 2025.11

    国立研究開発法人宇宙航空研究開発機構  宇宙探査イノベーションハブ RFP10 

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\1700000 ( Direct Cost: \1700000 、 Indirect Cost:\1870000 )