YASUDA Kazuhito

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering

Title

Professor

Graduating School

  • 1970.04
    -
    1974.03

    Shibaura Institute of Technology   Faculty of Engineering   Electrical Engineering   Graduated

Graduate School

  •  
    -
    1980.03

    Osaka University  Graduate School, Division of Engineering  Electrical EngineeringDoctor's Course  Accomplished credits for doctoral program

Degree

  • Osaka University -  Doctor of Engineering

  • Osaka University -  Master of Engineering

External Career

  • 1980.04
    -
    1985.08

    Fujitsu Laboratory   Researcher  

Academic Society Affiliations

  • 2012.04
    -
    2014.03

    2013 16th International Conference on II-VI Compounds and Related Mterials

  • 2008.04
    -
    Now

    Materials Research Society, Session Organizer

Field of expertise (Grants-in-aid for Scientific Research classification)

  • Electronic materials/Electric materials

  • Electron device/Electronic equipment

  • Applied materials

 

Research Career

  • Development of high performance CdTe imaging detectors using thick single crystal CdTe layers on Si substrate grown bby MOVPE

    Grant-in-Aid for Scientific Research  

    Project Year:  1995.04  -  Now

  • Development of high performance radiation detectors using single crystal thck CdTe layers grown by MOVPE

    International Collaboration   New Energy Technology Research and Development  

    Project Year:  1993.04  -  Now

  • MOVPE Growth of CdZnTe and Doping Characteristics

    International Collaboration   Cooperative Research  

    Project Year:  1990.04  -  Now

  • MOVPE Growth of HgCdTe layers and its applocation to infrared devices

    International Collaboration   Cooperative Research  

    Project Year:  1980.04  -  Now

Papers

  • Improving the performances of CdTe gamm ray detectors by H2/Ar ECR plasma processing

    M.Niraula,, K.Yasuda, S. Kitagawa, et al.

    IEEE Electron Device Letters ( IEEE )  37 ( 8 ) 1059 - 1062   2016.08  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Surface processing of CdTe detectors using hydrogen bromide-based etching solution

    M.Niraula, K.Yasuda, N.Takai, M.Matsumoto, et al.

    IEEE Electron Device Letters ( IEEE )  16 ( 8 ) 856 - 858   2015.08  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Development of large-area imaging arrays using epitaxially grown thick single crystal CdTe layers on Si substrates

    M.Niraula, K.Yasuda, et al.

    IEEE Trans. Nucl. Sci.   61 ( 5 ) 2555 - 2558   2014.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Development of nuclear-radiation detectros using thick single-crystal CdTe layers grown on (211) p+-Si substrates by MOVPE

    K.Yasuda, M.Niraula et al.

    "J. Electroin Materials   43 ( 8 ) 2860 - 2863   2014.08  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for X-ray and gamma-ray spectroscopic detector development

    M.Niraula, K.Yasuda et al.

    Phys. Status Solid   C11 ( 7-8 ) 1333 - 1336   2014.07  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Post growth annaling of CdTe layers grown on Si substartes by metalorganic vapor phase epitaxy

    K.Yasuda, M.Niraula et al.

    J. Electron. Mater.   42 ( 11 ) 3125 - 3128   2013.11  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Development of nuclear-radiation detectros using thick single-crystal CdTe layers grown on (211) p+-Si substrates by MOVPE

    K.Yasuda, M.Niraula, et al.

    Extend. Abstract 2013 US Workshop on the Phys. Chem. II-VI Materials     149 - 150   2013.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for X-ray and gamma-ray spectroscopic detector development

    M.Niraula, K.Yasuda, et al.

    The 16th International Conference on II-VI Compounds and Related Materials   24 ( Tu ) B4 - B4   2013.09  [Refereed]  [Invited]

    Research paper (international conference proceedings)   Multiple Authorship

  • Charge transport properties of p-CdTe/n-CdTe/n+-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers

    M.Niraula, K.Yasuda, et al.

    J. Appl. Phys.   114 ( 16 ) 164510 - 164515   2013.08  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • MOVPE growth of thick single crystal CdZnTe epitaxial layers on Si substrate for Nuclear Radiation Detector development

    M.Niraula, K.Yasuda et al.

    Trans. Nucl. Sci.   60 ( 4 ) 2859 - 2863   2013.08  [Refereed]  [Invited]

    Research paper (scientific journal)   Multiple Authorship

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Books

  • MRS Symp. Proceedings, Nuclear Radiation Detection Materials

    A.Burger, M.Fiederle, L.Franks, K.Lynn, D.L.Perry, K.Yasuda (Part: Joint Editing and Writing )

    Materials Research Society  2012.04

  • MRS Symp. Proceedings, Nuclear Radiation Detection Materials

    M.Fiederle, D.L.Perry, A.Burger, L.Franks, K.Yasuda (Part: Joint Editing and Writing )

    Materials Research Society  2010.04 ISBN: 978-1-60511-137-7

  • Optoelectronics

    (Part: Multiple Authorship )

    Ohmsha  2009.04 ISBN: 978-4-274-20786-0

Presentations

  • Recent progress in CdTe/n+-Si epitaxial layer based Heterojunction diode-type gamma detectros

    M.Niraula, K.Yasuda, M.Kojima, et al.  [Invited]

    IEEE 2016 23rd International Workshop on Room-Temperature Semiconductor X-ray and Gamma Ray Detectors   (Strassbourg, France)  2016.10  -  2016.11  IEEE

  • Surface processing of CdTe crystals in H2/Ar electron cyclotron resonance plasma

    M.Niraula, K.Yasuda, S.Kitagawa, et al.

    IEEE 2016 23rd International Workshop on Room-Temperature Semiconductor X-ray and Gamma Ray Detectors  (Strasbourg France)  2016.10  -  2016.11  IEEE

  • Characterization of (211) and (100) CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy

    K.Yasuda, M.Niraula, M.Kojima, et al.

    2016 US Workshop on the Phys. Chem. II-VI Materials  (Baltimore, USA)  2016.10  -  2016.10  2016 US Workshop on the Phys. Chem. II-VI Materials

  • Dry etching characyeristics of MOVPE grown CdTE epilayers in CH4, H2, Ar ECR plasmas

    K.Yasuda, M.Niraula, N.Araki, M.Miyata, et al.

    2016 US Workshop on the Phys. Chem. II-VI Materials  (Baltimore, USA)  2016.10  -  2016.10  2016 US Workshop on the Phys. Chem. II-VI Materials

  • Photoluminescence of As doped CdTe layers grown on (211) Si substrates by MOVPE

    M.Kojima, S.Kitagawa, K.Yasuda , et al.

    77th JSAP Autumn Meeting   (Toki Messe, Niigata)  2016.09  -  2016.09  JSAP

  • Chracterization of large-area spectroscopic imaging array fabricated using epitaxially grown thick single crystal CdTe layers on Si substrates

    M.Niraula, K.Yasuda, S.Kouno, et al.  [Invited]

    "IEEE 2015 22nd International Workshop on Room-Temperature Semiconductor X-ray and Gamma Ray Detectors  (San Diego)  2015.11  -  2015.11  IEEE

  • Study of CdTe surface processed with hydrogen bromide based etching solution

    M.Niraula, K.Yasuda, Y.Ito, et al.

    IEEE 2015 22nd International Workshop on Room-Temperature Semiconductor X-ray and Gamma Ray Detectors   (San Diego)  2015.11  -  2015.11  IEEE

  • Development of large-area imaging arrays using epitavially grown thick single crystal CdTe layers on Si substrates

    M. Niraula, K.Yasyuda、Yamashita、他

    IEEE 2013 20th RTSD (Seoul)  (Seoul, KOrea)  2013.10  -  2013.11  IEEE

  • Development of nuclear-radiation detectros using thick single-crystal CdTe layers grown on (211) p+-Si substrates by MOVPE

    K.Yasuda, M.Niraula, Y.Wajima, et al.

    2013 US Workshop on the Phys. Chem. II-VI Materials  (Chicago, USA)  2013.10  -  3013.10 

  • Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for X-ray and gamma-ray spectroscopic detector development

    M.Niraula, K.Yasuda, H.Yamashita, et al.

    The 16th International Conference on II-VI Compounds and Related Materials  (Nagahama Japan)  2013.09  -  2013.09 

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Industrial Property

  • Semiconductor Radiation Detector and Process for Producing the Same

    特願 PCT/JP2004/017891  特開 WO2005/053038  特許 7,355,185

    Semiconductor Radiation Detector and Process for Producing the Same

  • Rare earth oxide coated phosphors and a process for preparing the same

    特願 US:6,699,523 

    Rare earth oxide coated phosphors and a process for preparing the same

  • Process for fabricating an avalanche photodiode

    特願 US:4,840,916  特許 US:4,840,916

    Process for fabricating an avalanche photodiode

  • Process for fabricating an avalanche photodiode and an avalanche photodiode thus-obtained

    特願 EP19850303862 1985053  特許 EP19850303862 1985053

    Process for fabricating an avalanche photodiode and an avalanche photodiode thus-obtained

 
 

Academic Activity

  • 2012.04
    -
    2014.03

    2013 16th International Conference on II-VI Compounds and Related Mterials   International Program Committee

  • 2009.05
    -
    2012.03

    Materials Research Society, Session Organizer   Session Organizer, Session Chair, "Nuclear Radiation Detection Materials", Spring Meeting in San Francisco

  • 2008.04
    -
    2009.04

    Materials Research Society, Session Organizer   Session Organizer, Session Chair, "Nuclear Radiation Detection Materials", Spring Meeting in San Francisco