ICHIMURA Masaya

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering

Title

Professor

Mail Address

E-mail address

Degree

  •  -  Master of Engineering

  •  -  Doctor of Engineering

Academic Society Affiliations

  • 2010.09
    -
    Now

    The Materials Research Society of Japan

Field of expertise (Grants-in-aid for Scientific Research classification)

  • Electronic materials/Electric materials

 

Research Career

  • Electrical Characterization of Semiconductors

    Collaboration in Japan   (not selected)  

    Project Year:   - 

  • Electro- and photochemical Deposition of Semiconductors

    Individual   (not selected)  

    Project Year:   - 

Papers

  • Semiconducting Cu-doped AlOx films fabricated by drop-photochemical deposition

    M. Umemura, M. Ichimura

    Mater. Res. Express     2019.03  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • On the Possibility of Valence Control of Aluminum Oxide for Electronics Applications

    M. Ichimura

    J. Electron. Mater.   6 ( 1 ) 583 - 588   2019.01  [Refereed]

    Research paper (scientific journal)   Single Author

  • Fabrication of Pyrite FeS2 Films from Electrochemically Deposited FeOOH by Sulfur Annealing

    S. Maki, N. Takeda, M. Ichimura

    Int. J. Electrochem. Sci.   13   10829 - 10836   2018.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Fabrication of Copper Oxide Thin Films by Galvanostatic Deposition from Weakly Acidic Solutions

    M. Keikhaei, M. Ichimura

    Int. J. Electrochem. Sci.   13   9931 - 9941   2018.09  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Electrochemical deposition of Cu-doped p-type iron oxide thin films

    S. Kobayashi, M. Ichimura

    Semicond. Sci. Technol.   33 ( 9 ) 105006   2018.09  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Passivation of surface recombination at the Si-face of 4H-SiC by acidic solutions

    Y. Ichikawa, M. Ichimura, T. Kimoto, M. Kato

    ECS J. Solid St. Sci. Technol.   7 ( 8 ) Q127 - Q130   2018.08  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Fast electrochemical deposition of Ni(OH)2 precursor involving water electrolysis for fabrication of NiO thin films

    M. Koyama, M. Ichimura

    Semicond. Sci. Technol.   33 ( 5 ) 055011   2018.05  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Effects of Complexing Agents on Electrochemical Deposition of FeSxOy in ZnO/FeSxOy Heterostructures

    A. Supee, M. Ichimura

    Applied Physics A   123   722   2017.11  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Improved performance of 3C-SiC photocathodes by using a pn junction

    N. Ichikawa, M. Ichimura, M. Kato

    Int. J. Hydrogen Energy   42   22698 - 22703   2017.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Electrochemical deposition of transparent p-type semiconductor NiO

      137   542 - 546   2017.09  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

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Review Papers

  • Tips for vacuum measurement

      85 ( 6 ) 508   2016.06  [Refereed]  [Invited]

    Introduction and explanation (scientific journal)   Single Author

  • Tips for Basic Vacuum Science and Technology

    M. Ichimura

      85 ( 1 ) 49 - 52   2016.01

    Introduction and explanation (international conference proceedings)   Single Author

  • Introduction to Vacuum Science and Technology for Absolute Beginners

    M. Ichimura

      58 ( 8 ) 273 - 281   2015.08

    Introduction and explanation (international conference proceedings)   Single Author

  • Thin film Si solar cells

        29 - 36   2008.11

    Introduction and explanation (others)   Single Author

Presentations

  • Impurity Doping in Aluminum Oxide for Electronics Applications

    28th Annual Meeting of MRS-J   2018.12  -  2018.12  MRS-J

  • Fabrication of MgO Thin Films by Electrochemical Deposition with Cu Catalyst

    M. KEIKHAEI, M. ICHIMURA

    第28回日本MRS年次大会  2018.12  -  2018.12 

  • Fabrication of FeOOH/FeS2 Heterojunctions by Electrochemical Deposition

    27th annual meeting of MRS-J  2017.12  -  2017.12 

  • FABRICATION OF FeOOH/FeS2 HETERO JUNCTIONS by ELECTROCHEMICAL DEPOSITION AND SULFUR ANNEALING

    S. Maki, M. Ichimura

    27th Int. Photovoltaic Sci. Eng. Conf.  (Otsu)  2017.11  -  2017.11 

  • CHARACTERIZATION OF FeS O THIN FILMS PREPARED BY THREE-STEP PULSE ELECTROCHEMICAL DEPOSITION

    A. Supee, M. Ichimura

    XXVI International Materials Research Congress  (Mexico)  2017.08  -  2017.08 

  • ELECTROCHEMICAL DEPOSITION OF Cu-DOPED P-TYPE γ-FeOOH THIN FILMS

    S. Kobayashi, M. Ichimura

    XXVI International Materials Research Congress  (Mexico)  2017.08  -  2017.08 

  • FABRICATION OF NiO THIN FILMS BY GALVANOSTATIC ELECTROCHEMICAL DEPOSITION

    M. Koyama, M. Ichimura

    XXVI International Materials Research Congress  2017.08  -  2017.08 

  • N TYPE AlOx THIN FILMS FABRICATED BY DROP PHOTOCHEMICAL DEPOSITION

    M. Umemura, M. Ichimura

    XXVI International Materials Research Congress  (Mexico)  2017.08  -  2017.08 

  • Fabrication of Fe-S-O thin films by sulfur annealing of electrochemically deposited FeOOH films

    S. Maki, M. Ichimura

    26th Annual Meeting of MRS-J (Englich session)  2016.12  -  2016.12 

  • Fabrication of Fe-S/FeOOH hetero junctions by electrochemical deposition

    N. Takeda, M. Ichimura

    26th Annual Meeting of MRS-J (Englich session)  2016.12  -  2016.12 

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Industrial Property

  • Method and apparatus for forming gold plating by photochemical deposition

    特願 2004-210430  特開 2005-60828  特許 4521228

    Method and apparatus for forming gold plating by photochemical deposition

Academic Awards Received

  • SEMI Silicon Wafer Committee, Technical Committee Award 2006

    2006.04    

  • Prof. Ramasamy National Award for Crystal Growth 2004

    2004.04    

 
 

Academic Activity

  • 2010.07
    -
    2010.12

    The Materials Research Society of Japan