KATO Masashi

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Center for Research and Development in Higher Engineering-Education

Title

Associate Professor

Research Fields, Keywords

Semiconductor physics
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Graduating School

  • 　
    -
    1998.03

    Nagoya Institute of Technology   Faculty of Engineering   Electrical and Computer Engineering   Graduated

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Graduate School

  • 　
    -
    2003.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering  Electrical and Computer EngineeringDoctor's Course  Completed

  • 　
    -
    2000.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering  Electrical and Computer EngineeringMaster's Course  Completed

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Degree

  • Nagoya Institute of Technology -  Doctor (Engineering)

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External Career

  • 2010.08
    -
    2010.09

      Researcher  

  • 2009.08
    -
    2009.10

    Vilnius University   Researcher  

  • 2008.08
    -
    2008.10

    Vilnius University   Researcher  

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Academic Society Affiliations

  • 2005.01
    -
    2010.12

    IEEE

  • 2000.04
    -
    Now

    The Institute of Electronics, Information and Communication Engineers

  • 2000.04
    -
    2005.12

    Materials Research Society

  • 1998.04
    -
    Now

    The Japan Society of Applied Physics

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Field of expertise (Grants-in-aid for Scientific Research classification)

  • Electronic materials/Electric materials

  • Device related chemistry

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Papers

  • Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers

    Masashi Kato, Takato Asada, Takuto Maeda, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi

    Journal of Applied Physics   129 ( 11 ) 115701   2021.03  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Nondestructive measurements of depth distribution of carrier lifetimes in 4H-SiC thick epitaxial layers using time-resolved free carrier absorption with intersectional lights

    Takashi Hirayama, Keisuke Nagaya, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato

    Review of Scientific Instruments ( AIP Publishing LLC )  91 ( 12 ) 123902   2020.12  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy

    Yongzhao Yao, Yoshihiro Sugawara, Daisaku Yokoe, Koji Sato, Yukari Ishikawa, Narihito Okada, Kazuyuki Tadatomo, Masaki Sudo, Masashi Kato, Makoto Miyoshi, Takashi Egawa

    CrystEngComm ( Royal Society of Chemistry )  22   8299 - 8312   2020.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Observation of carrier lifetime distribution in 4H-SiC thick epilayers using microscopic time-resolved free carrier absorption system

    K. Nagaya, T. Hirayama, T. Tawara, K. Murata, H. Tsuchida, A. Miyasaka, K. Kojima, T. Kato, H. Okumura, M. Kato

    Journal of Applied Physics   128   105702-1 - 105702-7   2020.09  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Mapping of large structural defects in SiC Schottky contacts using internal photoemission microscopy

    Kenji Shiojima, Masashi Kato

    Materials Science in Semiconductor Processing   118   105182-1 - 105182-12   2020.05  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces

    Masashi Kato, Zhang Xinchi, Kimihiro Kohama, Shuhei Fukaya, Masaya Ichimura

    Journal of Applied Physics   127   195702-1 - 195702-7   2020.05  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Highly efficient 3C-SiC photocathodes with texture structures formed by electrochemical etching

    Masashi Kato, Tomohiro Ambe

    Applied Physics Express   13   026506   2020.02  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Heat shock protein 70 is a key molecule to rescue imbalance caused by low‑frequency noise

    Reina Negishi‑Oshino, Nobutaka Ohgami, Tingchao He, Xiang Li, Masashi Kato, Masayoshi Kobayashi, Yishuo Gu, Kanako Komuro, Charalampos E. Angelidis, Masashi Kato

    Archives of Toxicology     2019.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates

    Masashi Kato, Naoto Ichikawa, Yoshitaka Nakano

    Materials Letters   254   96 - 98   2019.07  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Effects of Nb Doping on the Photocatalytic Performance of Rutile TiO2 Single Crystals

    Masashi Kato, Hayao Najima, Takaya Ozawa

    Journal of The Electrochemical Society   166 ( 10 ) H468 - H472   2019.06  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

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Presentations

  • D4-12-O03 Difference in carrier lifetimes for SiC measured by microwave photoconductivity decay and time-resolved photoluminescence methods

    Masashi KATO

    MATERIALS RESEARCH MEETING 2019  (YOKOHAMA SYMPOSIA)  2019.12  -  2019.12 

  • D4-11-I08 Carrier Recombination Velocity in 4H-SiC: at Surfaces and Defects

    Masashi KATO  [Invited]

    MATERIALS RESEARCH MEETING 2019  (YOKOHAMA SYMPOSIA)  2019.12  -  2019.12 

  • WP2-9 Mapping of Large Structural Defects in SiC Schottky Contacts Using Internal Photoemission Microscopy

    Kenji Shiojima, Masashi Kato

    8th International Symposium on Control of Semiconductor Interfaces  (Sendai)  2019.11  -  2019.11 

  • [Fr-1B-03] High Performance 3C-SiC Photocathode with Texture Structure Formed by Electrochemical Etching

    Masashi Kato, Tomohiro Ambe

    ICSCRM2019  (Kyoto ICC)  2019.09  -  2019.10  ICSCRM2019 Organizing Committee

  • [Fr-3B-05LN] Microscopic FCA system for carrier lifetime measurement in SiC with high spatial resolution

    Keisuke Nagaya, Takashi Hirayama, Takeshi Tawara, Koichi Murata, Hidekazu Tsuchida, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato

    ICSCRM2019  (Kyoto ICC)  2019.09  -  2019.10  ICSCRM2019 Organizing Committee

  • [Th-P-51LN] Nondestructive depth distribution measurements of carrier lifetime in 4H-SiC thick epitaxial layers with high spatial resolution

    akashi Hirayama, Keisuke Nagaya, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato

    ICSCRM2019  (Kyoto ICC)  2019.09  -  2019.10  ICSCRM2019 Organizing Committee

  • [A-1-03] Observation of Photoexcited Carrier Recombination in Metal Halide Perovskite Materials with Single and Poly crystalline structures

    T. Kawane, G.J. Matt, S. Shrestha, L. Jevgen, C.J. Brabec, A. Kanak, P. Fochuk, M. Kato

    SSDM2019  (Nagoya University)  2019.09  -  2019.09  JSAP

  • [PS-4-22] Observation of Slow Carrier Recombination in p-type GaN Epilayers on GaN Substrates

    S. Zhu, K. Ito, K. Tomita, T. Narita, T. Kachi, M. Kato

    SSDM2019  (Nagoya University)  2019.09  -  2019.09  JSAP

  • Temperature dependent carrier lifetime measurements on free-standing 4H-SiC epilayer

    Jan Beyer, Masashi Kato, Nadine Schüler, Kay Dornich, Johannes Heitmann

    European Materials Research Society 2019 Spring Meeting  (Nice, France)  2019.05  -  2019.05 

  • [9p-S321-7] Hydrogen generation by water splitting using TiO2 and 3C-SiC in tandem structure

    Zhenhang Liu、Masashi Kato

    2019年第66回応用物理学会春季学術講演会  2019.03  -  2019.03 

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Academic Activity

  • 2018.04
    -
    2019.03

    The Japan Society of Applied Physics  

  • 2017.04
    -
    Now

    The Japan Society of Applied Physics  

  • 2016.12
    -
    2017.11

    The Japan Society of Applied Physics  

  • 2016.04
    -
    2020.03

    The Japan Society of Applied Physics  

  • 2014.01
    -
    2014.12

    The Japan Society of Applied Physics  

  • 2013.12
    -
    2014.11

    The Japan Society of Applied Physics  

  • 2012.11
    -
    2013.10

    The Japan Society of Applied Physics  

  • 2011.12
    -
    2014.12

    The Japan Society of Applied Physics  

  • 2010.12
    -
    2011.11

    The Japan Society of Applied Physics  

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