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Affiliation Department etc. |
Department of Electrical and Mechanical Engineering
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Title |
Associate Professor |
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Research Fields, Keywords |
Semiconductor physics |
KATO Masashi
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Graduating School
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-1998.03
Nagoya Institute of Technology Faculty of Engineering Electrical and Computer Engineering Graduated
Graduate School
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-2003.03
Nagoya Institute of Technology Graduate School, Division of Engineering Electrical and Computer EngineeringDoctor's Course Completed
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-2000.03
Nagoya Institute of Technology Graduate School, Division of Engineering Electrical and Computer EngineeringMaster's Course Completed
External Career
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2010.08-2010.09
Researcher
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2009.08-2009.10
Vilnius University Researcher
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2008.08-2008.10
Vilnius University Researcher
Academic Society Affiliations
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2005.01-2010.12
IEEE
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2000.04-Now
The Institute of Electronics, Information and Communication Engineers
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2000.04-2005.12
Materials Research Society
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1998.04-Now
The Japan Society of Applied Physics
Field of expertise (Grants-in-aid for Scientific Research classification)
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Electronic materials/Electric materials
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Device related chemistry
Papers
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Heat shock protein 70 is a key molecule to rescue imbalance caused by low‑frequency noise
Reina Negishi‑Oshino, Nobutaka Ohgami, Tingchao He, Xiang Li, Masashi Kato, Masayoshi Kobayashi, Yishuo Gu, Kanako Komuro, Charalampos E. Angelidis, Masashi Kato
Archives of Toxicology 2019.10 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates
Masashi Kato, Naoto Ichikawa, Yoshitaka Nakano
Materials Letters 254 96 - 98 2019.07 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Effects of Nb Doping on the Photocatalytic Performance of Rutile TiO2 Single Crystals
Masashi Kato, Hayao Najima, Takaya Ozawa
Journal of The Electrochemical Society 166 ( 10 ) H468 - H472 2019.06 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Takato Asada, Yoshihito Ichikawa, Masashi Kato
Journal of Visualized Experiments 146 e59007 2019.04 [Refereed] [Invited]
Research paper (scientific journal) Multiple Authorship
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RECOMBINATION AND DIFFUSION PROCESSES IN ELECTRONIC GRADE 4H SILICON CARBIDE
P. Ščajev, L. Subačius, K. Jarašiūnas, M. Kato
Lithuanian Journal of Physics 59 ( 1 ) 26 - 34 2019.04 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction
Ajinkya K. Ranade, Rakesh D. Mahyavanshi, Pradeep Desai, Masashi Kato, Masaki Tanemura, Golap Kalita
Applied Physics Letters 114 151102 2019.04 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Impact of intrinsic defects on excitation dependent carrier lifetime in thick4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques
Patrik Ščajev, Saulius Miasojedovas, Liudvikas Subačius, Kęstutis Jarašiūnas, Alexander V. Mazanik , Olga V. Korolik, Masashi Kato
Journal of Luminescence 212 92 - 98 2019.04 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC
Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, and Tsunenobu Kimoto
Journal of Applied Physics 124 ( 9 ) 095702 2018.09 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Passivation of surface recombination at the Si-face of 4H-SiC by acidic solutions
Yoshihito Ichikawa, Masaya Ichimura, Tsunenobu Kimoto, Masashi Kato
the ECS Journal of Solid State Science and Technology 7 ( 8 ) Q127 - Q130 2018.06 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Expansion of a single Shockley stacking fault in a 4H-SiC (1120) epitaxial layer caused by electron beam irradiation
Yukari Ishikawa, Masaki Sudo, Yong-Zhao Yao, Yoshihiro Sugawara, Masashi Kato
JOURNAL OF APPLIED PHYSICS 123 225101-1 - 225101-6 2018.06 [Refereed]
Research paper (scientific journal) Multiple Authorship
Presentations
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[Fr-1B-03] High Performance 3C-SiC Photocathode with Texture Structure Formed by Electrochemical Etching
Masashi Kato, Tomohiro Ambe
ICSCRM2019 (Kyoto ICC) 2019.09 - 2019.10 ICSCRM2019 Organizing Committee
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[Fr-3B-05LN] Microscopic FCA system for carrier lifetime measurement in SiC with high spatial resolution
Keisuke Nagaya, Takashi Hirayama, Takeshi Tawara, Koichi Murata, Hidekazu Tsuchida, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato
ICSCRM2019 (Kyoto ICC) 2019.09 - 2019.10 ICSCRM2019 Organizing Committee
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[Th-P-51LN] Nondestructive depth distribution measurements of carrier lifetime in 4H-SiC thick epitaxial layers with high spatial resolution
akashi Hirayama, Keisuke Nagaya, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato
ICSCRM2019 (Kyoto ICC) 2019.09 - 2019.10 ICSCRM2019 Organizing Committee
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[A-1-03] Observation of Photoexcited Carrier Recombination in Metal Halide Perovskite Materials with Single and Poly crystalline structures
T. Kawane, G.J. Matt, S. Shrestha, L. Jevgen, C.J. Brabec, A. Kanak, P. Fochuk, M. Kato
SSDM2019 (Nagoya University) 2019.09 - 2019.09 JSAP
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[PS-4-22] Observation of Slow Carrier Recombination in p-type GaN Epilayers on GaN Substrates
S. Zhu, K. Ito, K. Tomita, T. Narita, T. Kachi, M. Kato
SSDM2019 (Nagoya University) 2019.09 - 2019.09 JSAP
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Temperature dependent carrier lifetime measurements on free-standing 4H-SiC epilayer
Jan Beyer, Masashi Kato, Nadine Schüler, Kay Dornich, Johannes Heitmann
European Materials Research Society 2019 Spring Meeting (Nice, France) 2019.05 - 2019.05
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[9p-S321-7] Hydrogen generation by water splitting using TiO2 and 3C-SiC in tandem structure
Zhenhang Liu、Masashi Kato
2019年第66回応用物理学会春季学術講演会 2019.03 - 2019.03
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Characterization and Suppression of Defects in Silicon Carbide Crystal for Power Semiconductors
Masashi Kato [Invited]
Semiconductor Power Devices (National Chiao-Tung University) 2018.12 - 2018.12 National Chiao-Tung University
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CR6-4 Analysis of slow decays in TR-PL signals from a GaN homoepitaxial layer
Masashi Kato, Takato Asada, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi
The International Workshop on Nitride Semiconductors 2018 (IWN 2018) (The Ishikawa Ongakudo, the ANA Crowne Plaza Hotel Kanazawa, Japan) 2018.11 - 2018.11
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IIB-25 Hydrogen generation by water Splitting using TiO2 and SiC in tandem structure
LIU Zhenhang, Masashi Kato
先進パワー半導体分科会第5回講演会 (京都テルサ) 2018.11 - 2018.11 公益社団法人 応用物理学会 先進パワー半導体分科会
Academic Activity
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2018.04-2019.03
The Japan Society of Applied Physics
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2017.04-Now
The Japan Society of Applied Physics
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2016.12-2017.11
The Japan Society of Applied Physics
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2016.04-2020.03
The Japan Society of Applied Physics
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2014.01-2014.12
The Japan Society of Applied Physics
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2013.12-2014.11
The Japan Society of Applied Physics
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2012.11-2013.10
The Japan Society of Applied Physics
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2011.12-2014.12
The Japan Society of Applied Physics
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2010.12-2011.11
The Japan Society of Applied Physics