KATO Masashi

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering

Title

Associate Professor

Research Fields, Keywords

Semiconductor physics

Graduating School

  •  
    -
    1998.03

    Nagoya Institute of Technology   Faculty of Engineering   Electrical and Computer Engineering   Graduated

Graduate School

  •  
    -
    2003.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering  Electrical and Computer EngineeringDoctor's Course  Completed

  •  
    -
    2000.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering  Electrical and Computer EngineeringMaster's Course  Completed

Degree

  • Nagoya Institute of Technology -  Doctor (Engineering)

External Career

  • 2010.08
    -
    2010.09

      Researcher  

  • 2009.08
    -
    2009.10

    Vilnius University   Researcher  

  • 2008.08
    -
    2008.10

    Vilnius University   Researcher  

Academic Society Affiliations

  • 2005.01
    -
    2010.12

    IEEE

  • 2000.04
    -
    Now

    The Institute of Electronics, Information and Communication Engineers

  • 2000.04
    -
    2005.12

    Materials Research Society

  • 1998.04
    -
    Now

    The Japan Society of Applied Physics

Field of expertise (Grants-in-aid for Scientific Research classification)

  • Electronic materials/Electric materials

  • Device related chemistry

 

Papers

  • Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

    Takato Asada, Yoshihito Ichikawa, Masashi Kato

    Journal of Visualized Experiments   146   e59007   2019.04  [Refereed]  [Invited]

    Research paper (scientific journal)   Multiple Authorship

  • Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction

    Ajinkya K. Ranade, Rakesh D. Mahyavanshi, Pradeep Desai, Masashi Kato, Masaki Tanemura, Golap Kalita

    Applied Physics Letters   114   151102   2019.04  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Impact of intrinsic defects on excitation dependent carrier lifetime in thick4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques

    Patrik Ščajev, Saulius Miasojedovas, Liudvikas Subačius, Kęstutis Jarašiūnas, Alexander V. Mazanik , Olga V. Korolik, Masashi Kato

    Journal of Luminescence   212   92 - 98   2019.04  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC

    Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, and Tsunenobu Kimoto

    Journal of Applied Physics   124 ( 9 ) 095702   2018.09  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Passivation of surface recombination at the Si-face of 4H-SiC by acidic solutions

    Yoshihito Ichikawa, Masaya Ichimura, Tsunenobu Kimoto, Masashi Kato

    the ECS Journal of Solid State Science and Technology   7 ( 8 ) Q127 - Q130   2018.06  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Expansion of a single Shockley stacking fault in a 4H-SiC (1120) epitaxial layer caused by electron beam irradiation

    Yukari Ishikawa, Masaki Sudo, Yong-Zhao Yao, Yoshihiro Sugawara, Masashi Kato

    JOURNAL OF APPLIED PHYSICS   123   225101-1 - 225101-6   2018.06  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Increased expression level of Hsp70 in the inner ears of mice by exposure to low frequency noise

    Hiromasa Ninomiya, Nobutaka Ohgami, Reina Oshino, Masashi Kato, Kyoko Ohgami, Xiang Li, Dandan Shen, Machiko Iida, Ichiro Yajima, Charalampos E. Angelidis, Hiroaki Adachi, Masahisa Katsuno, Gen Sobue, Masashi Kato

    Hearing Research   363   49 - 54   2018.06  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation

    Masaki Sudo, Yukari Ishikawa, Yong Zhao Yao, Yoshihiro Sugawara, Masashi Kato

    Materials Science Forum   924   151 - 154   2018.06  [Refereed]

    Research paper (international conference proceedings)   Multiple Authorship

  • Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC

    Shinichi Mae, Takeshi Tawara, Hidekazu Tsuchida, Masashi Kato

    Materials Science Forum   924   269 - 272   2018.06  [Refereed]

    Research paper (international conference proceedings)   Multiple Authorship

  • Observations of Inhomogeneity of 3C-SiC Layers Grown on 6H-SiC Substrates Using Scanning Internal Photoemission Microscopy

    Kenji Shiojima, Naoki Mishina, Naoto Ichikawa, Masashi Kato

    Japanese Journal of Applied Physics   57   04FR06   2018.02  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

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Presentations

  • [9p-S321-7] Hydrogen generation by water splitting using TiO2 and 3C-SiC in tandem structure

    Zhenhang Liu、Masashi Kato

    2019年第66回応用物理学会春季学術講演会  2019.03  -  2019.03 

  • Characterization and Suppression of Defects in Silicon Carbide Crystal for Power Semiconductors

    Masashi Kato  [Invited]

    Semiconductor Power Devices  (National Chiao-Tung University)  2018.12  -  2018.12  National Chiao-Tung University

  • CR6-4 Analysis of slow decays in TR-PL signals from a GaN homoepitaxial layer

    Masashi Kato, Takato Asada, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi

    The International Workshop on Nitride Semiconductors 2018 (IWN 2018)  (The Ishikawa Ongakudo, the ANA Crowne Plaza Hotel Kanazawa, Japan)  2018.11  -  2018.11 

  • IIB-25 Hydrogen generation by water Splitting using TiO2 and SiC in tandem structure

    LIU Zhenhang, Masashi Kato

    先進パワー半導体分科会第5回講演会  (京都テルサ)  2018.11  -  2018.11  公益社団法人 応用物理学会 先進パワー半導体分科会

  • [C5-1] Carrier lifetime measurements for wide gap semiconductors SiC and GaN

    Masashi Kato

    EVS31 & EVTeC 2018  (Kobe Convention Center)  2018.09  -  2018.10 

  • MO.04.01 Modeling Physical Properties of Single Shockley-type Stacking Fault in 4H-SiC PiN Diode

    K. Nakayama, T. Kimoto, M. Kato, Y. Yonezawa, H. Okumura

    European Conference on Silicon Carbide and Related Materials (ECSCRM 2018)  (The International Conference Centre, Birmingham, UK)  2018.09  -  2018.09 

  • TH.03.03 Surface recombination velocity for non-polar faces of 4H-SiC

    M. Kato, X. Zhang, K. Kohama, M. Ichimura

    European Conference on Silicon Carbide and Related Materials (ECSCR 2018)  (The International Conference Centre, Birmingham, UK)  2018.09  -  2018.09 

  • Carrier lifetime measurements for power semiconductor materials

    Masashi Kato  [Invited]

    the Collaborative Conference on Materials Research (CCMR) 2018  (Songdo Convensia, Korea)  2018.06  -  2018.06 

  • 7C-3.4 Slow carrier recombination in a GaN epilayer grown on a GaN substrate

    Takato Asada, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi, Masashi Kato

    The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX)  (Nara Kasugano International Forum 甍 IRAKA)  2018.06  -  2018.06 

  • P-Type 3C-SiC Photocathode for Solar to Hydrogen Energy Conversion

    Masashi Kato  [Invited]

    232nd ECS MEETING  (National Harbor, MD)  2017.10  -  2017.10  THE ELECTROCHEMICAL SOCIETY.

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Academic Activity

  • 2018.04
    -
    2019.03

    The Japan Society of Applied Physics  

  • 2017.04
    -
    Now

    The Japan Society of Applied Physics  

  • 2016.12
    -
    2017.11

    The Japan Society of Applied Physics  

  • 2016.04
    -
    2020.03

    The Japan Society of Applied Physics  

  • 2014.01
    -
    2014.12

    The Japan Society of Applied Physics  

  • 2013.12
    -
    2014.11

    The Japan Society of Applied Physics  

  • 2012.11
    -
    2013.10

    The Japan Society of Applied Physics  

  • 2011.12
    -
    2014.12

    The Japan Society of Applied Physics  

  • 2010.12
    -
    2011.11

    The Japan Society of Applied Physics