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Affiliation Department etc. |
Department of Electrical and Mechanical Engineering
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Title |
Associate Professor |
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Research Fields, Keywords |
Semiconductor physics |
KATO Masashi
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Graduating School
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-1998.03
Nagoya Institute of Technology Faculty of Engineering Electrical and Computer Engineering Graduated
Graduate School
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-2003.03
Nagoya Institute of Technology Graduate School, Division of Engineering Electrical and Computer EngineeringDoctor's Course Completed
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-2000.03
Nagoya Institute of Technology Graduate School, Division of Engineering Electrical and Computer EngineeringMaster's Course Completed
External Career
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2010.08-2010.09
Researcher
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2009.08-2009.10
Vilnius University Researcher
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2008.08-2008.10
Vilnius University Researcher
Academic Society Affiliations
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2005.01-2010.12
IEEE
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2000.04-Now
The Institute of Electronics, Information and Communication Engineers
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2000.04-2005.12
Materials Research Society
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1998.04-Now
The Japan Society of Applied Physics
Field of expertise (Grants-in-aid for Scientific Research classification)
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Electronic materials/Electric materials
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Device related chemistry
Papers
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Depth Distribution of Defects in SiC PiN Diodes FormedUsing Ion Implantation or Epitaxial Growth
Shuhei Fukaya,Yoshiyuki Yonezawa,Tomohisa Kato,Masashi Kato
Physica Status Solidi B ( Wiley-VCH GmbH ) 2100419-1 - 2100419-6 2021.10 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Deep levels related to the carbon antisite-vacancy pair in 4H-SiC
Hiroki Nakane, Masashi Kato, Yutaro Ohkouchi, Xuan Thang Trinh, Ivan G. Ivanov, Takeshi Ohshima, Nguyen Tien Son
Journal of Applied Physics 130 065703 2021.08 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Durable and efficient photoelectrochemical water splitting using TiO2 and 3C–SiC single crystals in a tandem structure
Endong Zhang, Zhenhang Liu, Masashi Kato
Solar Energy Materials and Solar Cells 230 ( 15 ) 111260 2021.06 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Carrier recombination in SrTiO3 single crystals: impacts of crystal faces and Nb doping
Masashi Kato, Takaya Ozawa, Yoshihito Ichikawa
Journal of Physics D: Applied Physics ( IOP Science ) 54 ( 34 ) 345106 2021.06 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Flexible Photocatalytic Electrode Using Graphene, Non-noble Metal, and Organic Semiconductors for Hydrogen Evolution Reaction
Kohei Kondo, Yusuke Watanabe, Junya Kuno, Yosuke Ishii, Shinji Kawasaki, Masashi Kato, Golap Kalita, Yoshiyuki Hattori, Oleksandr Mashkov, Mykhailo Sytnyk, Wolfgang Heiss
Energy Technology 9 ( 8 ) 2100123 2021.05 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Masashi Kato, Takato Asada, Takuto Maeda, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi
Journal of Applied Physics 129 ( 11 ) 115701 2021.03 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Takashi Hirayama, Keisuke Nagaya, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato
Review of Scientific Instruments ( AIP Publishing LLC ) 91 ( 12 ) 123902 2020.12 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy
Yongzhao Yao, Yoshihiro Sugawara, Daisaku Yokoe, Koji Sato, Yukari Ishikawa, Narihito Okada, Kazuyuki Tadatomo, Masaki Sudo, Masashi Kato, Makoto Miyoshi, Takashi Egawa
CrystEngComm ( Royal Society of Chemistry ) 22 8299 - 8312 2020.10 [Refereed]
Research paper (scientific journal) Multiple Authorship
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K. Nagaya, T. Hirayama, T. Tawara, K. Murata, H. Tsuchida, A. Miyasaka, K. Kojima, T. Kato, H. Okumura, M. Kato
Journal of Applied Physics 128 105702-1 - 105702-7 2020.09 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Mapping of large structural defects in SiC Schottky contacts using internal photoemission microscopy
Kenji Shiojima, Masashi Kato
Materials Science in Semiconductor Processing 118 105182-1 - 105182-12 2020.05 [Refereed]
Research paper (scientific journal) Multiple Authorship
Presentations
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[D-4-07] Effects of the ion implantation process on carrier lifetimes in 4H-SiC SJ-MOSFET
Takuya Fukui, Takeshi Tawara, Masashi Kato
2021 International Conference on Solid State Devices and Materials (online) 2021.09 - 2021.09 The Japan Society of Applied Physics.
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[F-2-04] Estimation of surface recombination velocities of SrTiO3 for optimum structures as a photocatalyst
Masashi Kato, Takaya Ozawa, Yoshihito Ichikawa
2021 International Conference on Solid State Devices and Materials (online) 2021.09 - 2021.09 The Japan Society of Applied Physics.
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[H2.4] Effects of crystalline defects on degradation of SiC devices
Masashi Kato
EVTeC 2021 (Virtual) 2021.05 - 2021.05 JSAE
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[P23] Mapping Of Schottky Contacts On P-4H-SiC Wafers Using Scanning Internal Photoemission Microscopy
Kenji Shiojima, Masashi Kato
Compound Semiconductor Week 2021 (online) 2021.05 - 2021.05
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D4-12-O03 Difference in carrier lifetimes for SiC measured by microwave photoconductivity decay and time-resolved photoluminescence methods
Masashi KATO
MATERIALS RESEARCH MEETING 2019 (YOKOHAMA SYMPOSIA) 2019.12 - 2019.12
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D4-11-I08 Carrier Recombination Velocity in 4H-SiC: at Surfaces and Defects
Masashi KATO [Invited]
MATERIALS RESEARCH MEETING 2019 (YOKOHAMA SYMPOSIA) 2019.12 - 2019.12
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WP2-9 Mapping of Large Structural Defects in SiC Schottky Contacts Using Internal Photoemission Microscopy
Kenji Shiojima, Masashi Kato
8th International Symposium on Control of Semiconductor Interfaces (Sendai) 2019.11 - 2019.11
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[Fr-1B-03] High Performance 3C-SiC Photocathode with Texture Structure Formed by Electrochemical Etching
Masashi Kato, Tomohiro Ambe
ICSCRM2019 (Kyoto ICC) 2019.09 - 2019.10 ICSCRM2019 Organizing Committee
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[Fr-3B-05LN] Microscopic FCA system for carrier lifetime measurement in SiC with high spatial resolution
Keisuke Nagaya, Takashi Hirayama, Takeshi Tawara, Koichi Murata, Hidekazu Tsuchida, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato
ICSCRM2019 (Kyoto ICC) 2019.09 - 2019.10 ICSCRM2019 Organizing Committee
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[Th-P-51LN] Nondestructive depth distribution measurements of carrier lifetime in 4H-SiC thick epitaxial layers with high spatial resolution
akashi Hirayama, Keisuke Nagaya, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato
ICSCRM2019 (Kyoto ICC) 2019.09 - 2019.10 ICSCRM2019 Organizing Committee
Academic Activity
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2018.04-2019.03
The Japan Society of Applied Physics
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2017.04-Now
The Japan Society of Applied Physics
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2016.12-2017.11
The Japan Society of Applied Physics
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2016.04-2020.03
The Japan Society of Applied Physics
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2014.01-2014.12
The Japan Society of Applied Physics
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2013.12-2014.11
The Japan Society of Applied Physics
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2012.11-2013.10
The Japan Society of Applied Physics
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2011.12-2014.12
The Japan Society of Applied Physics
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2010.12-2011.11
The Japan Society of Applied Physics