KATO Masashi

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering

Title

Associate Professor

Research Fields, Keywords

Semiconductor physics

Graduating School

  •  
    -
    1998.03

    Nagoya Institute of Technology   Faculty of Engineering   Electrical and Computer Engineering   Graduated

Graduate School

  •  
    -
    2003.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering  Electrical and Computer EngineeringDoctor's Course  Completed

  •  
    -
    2000.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering  Electrical and Computer EngineeringMaster's Course  Completed

Degree

  • Nagoya Institute of Technology -  Doctor (Engineering)

External Career

  • 2010.08
    -
    2010.09

      Researcher  

  • 2009.08
    -
    2009.10

    Vilnius University   Researcher  

  • 2008.08
    -
    2008.10

    Vilnius University   Researcher  

Academic Society Affiliations

  • 2005.01
    -
    2010.12

    IEEE

  • 2000.04
    -
    Now

    The Institute of Electronics, Information and Communication Engineers

  • 2000.04
    -
    2005.12

    Materials Research Society

  • 1998.04
    -
    Now

    The Japan Society of Applied Physics

Field of expertise (Grants-in-aid for Scientific Research classification)

  • Electronic materials/Electric materials

  • Device related chemistry

 

Papers

  • Heat shock protein 70 is a key molecule to rescue imbalance caused by low‑frequency noise

    Reina Negishi‑Oshino, Nobutaka Ohgami, Tingchao He, Xiang Li, Masashi Kato, Masayoshi Kobayashi, Yishuo Gu, Kanako Komuro, Charalampos E. Angelidis, Masashi Kato

    Archives of Toxicology     2019.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Characterisation of defects in p-type 4H-, 6H- and 3C-SiC epilayers grown on SiC substrates

    Masashi Kato, Naoto Ichikawa, Yoshitaka Nakano

    Materials Letters   254   96 - 98   2019.07  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Effects of Nb Doping on the Photocatalytic Performance of Rutile TiO2 Single Crystals

    Masashi Kato, Hayao Najima, Takaya Ozawa

    Journal of The Electrochemical Society   166 ( 10 ) H468 - H472   2019.06  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method

    Takato Asada, Yoshihito Ichikawa, Masashi Kato

    Journal of Visualized Experiments   146   e59007   2019.04  [Refereed]  [Invited]

    Research paper (scientific journal)   Multiple Authorship

  • RECOMBINATION AND DIFFUSION PROCESSES IN ELECTRONIC GRADE 4H SILICON CARBIDE

    P. Ščajev, L. Subačius, K. Jarašiūnas, M. Kato

    Lithuanian Journal of Physics   59 ( 1 ) 26 - 34   2019.04  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Ultraviolet light induced electrical hysteresis effect in graphene-GaN heterojunction

    Ajinkya K. Ranade, Rakesh D. Mahyavanshi, Pradeep Desai, Masashi Kato, Masaki Tanemura, Golap Kalita

    Applied Physics Letters   114   151102   2019.04  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Impact of intrinsic defects on excitation dependent carrier lifetime in thick4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques

    Patrik Ščajev, Saulius Miasojedovas, Liudvikas Subačius, Kęstutis Jarašiūnas, Alexander V. Mazanik , Olga V. Korolik, Masashi Kato

    Journal of Luminescence   212   92 - 98   2019.04  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC

    Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, and Tsunenobu Kimoto

    Journal of Applied Physics   124 ( 9 ) 095702   2018.09  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Passivation of surface recombination at the Si-face of 4H-SiC by acidic solutions

    Yoshihito Ichikawa, Masaya Ichimura, Tsunenobu Kimoto, Masashi Kato

    the ECS Journal of Solid State Science and Technology   7 ( 8 ) Q127 - Q130   2018.06  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Expansion of a single Shockley stacking fault in a 4H-SiC (1120) epitaxial layer caused by electron beam irradiation

    Yukari Ishikawa, Masaki Sudo, Yong-Zhao Yao, Yoshihiro Sugawara, Masashi Kato

    JOURNAL OF APPLIED PHYSICS   123   225101-1 - 225101-6   2018.06  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

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Presentations

  • [Fr-1B-03] High Performance 3C-SiC Photocathode with Texture Structure Formed by Electrochemical Etching

    Masashi Kato, Tomohiro Ambe

    ICSCRM2019  (Kyoto ICC)  2019.09  -  2019.10  ICSCRM2019 Organizing Committee

  • [Fr-3B-05LN] Microscopic FCA system for carrier lifetime measurement in SiC with high spatial resolution

    Keisuke Nagaya, Takashi Hirayama, Takeshi Tawara, Koichi Murata, Hidekazu Tsuchida, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato

    ICSCRM2019  (Kyoto ICC)  2019.09  -  2019.10  ICSCRM2019 Organizing Committee

  • [Th-P-51LN] Nondestructive depth distribution measurements of carrier lifetime in 4H-SiC thick epitaxial layers with high spatial resolution

    akashi Hirayama, Keisuke Nagaya, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato

    ICSCRM2019  (Kyoto ICC)  2019.09  -  2019.10  ICSCRM2019 Organizing Committee

  • [A-1-03] Observation of Photoexcited Carrier Recombination in Metal Halide Perovskite Materials with Single and Poly crystalline structures

    T. Kawane, G.J. Matt, S. Shrestha, L. Jevgen, C.J. Brabec, A. Kanak, P. Fochuk, M. Kato

    SSDM2019  (Nagoya University)  2019.09  -  2019.09  JSAP

  • [PS-4-22] Observation of Slow Carrier Recombination in p-type GaN Epilayers on GaN Substrates

    S. Zhu, K. Ito, K. Tomita, T. Narita, T. Kachi, M. Kato

    SSDM2019  (Nagoya University)  2019.09  -  2019.09  JSAP

  • Temperature dependent carrier lifetime measurements on free-standing 4H-SiC epilayer

    Jan Beyer, Masashi Kato, Nadine Schüler, Kay Dornich, Johannes Heitmann

    European Materials Research Society 2019 Spring Meeting  (Nice, France)  2019.05  -  2019.05 

  • [9p-S321-7] Hydrogen generation by water splitting using TiO2 and 3C-SiC in tandem structure

    Zhenhang Liu、Masashi Kato

    2019年第66回応用物理学会春季学術講演会  2019.03  -  2019.03 

  • Characterization and Suppression of Defects in Silicon Carbide Crystal for Power Semiconductors

    Masashi Kato  [Invited]

    Semiconductor Power Devices  (National Chiao-Tung University)  2018.12  -  2018.12  National Chiao-Tung University

  • CR6-4 Analysis of slow decays in TR-PL signals from a GaN homoepitaxial layer

    Masashi Kato, Takato Asada, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi

    The International Workshop on Nitride Semiconductors 2018 (IWN 2018)  (The Ishikawa Ongakudo, the ANA Crowne Plaza Hotel Kanazawa, Japan)  2018.11  -  2018.11 

  • IIB-25 Hydrogen generation by water Splitting using TiO2 and SiC in tandem structure

    LIU Zhenhang, Masashi Kato

    先進パワー半導体分科会第5回講演会  (京都テルサ)  2018.11  -  2018.11  公益社団法人 応用物理学会 先進パワー半導体分科会

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Academic Activity

  • 2018.04
    -
    2019.03

    The Japan Society of Applied Physics  

  • 2017.04
    -
    Now

    The Japan Society of Applied Physics  

  • 2016.12
    -
    2017.11

    The Japan Society of Applied Physics  

  • 2016.04
    -
    2020.03

    The Japan Society of Applied Physics  

  • 2014.01
    -
    2014.12

    The Japan Society of Applied Physics  

  • 2013.12
    -
    2014.11

    The Japan Society of Applied Physics  

  • 2012.11
    -
    2013.10

    The Japan Society of Applied Physics  

  • 2011.12
    -
    2014.12

    The Japan Society of Applied Physics  

  • 2010.12
    -
    2011.11

    The Japan Society of Applied Physics