KATO Masashi

写真a

Affiliation Department etc.

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Center for Research and Development in Higher Engineering-Education

Title

Associate Professor

Research Fields, Keywords

Semiconductor physics

Graduating School

  •  
    -
    1998.03

    Nagoya Institute of Technology   Faculty of Engineering   Electrical and Computer Engineering   Graduated

Graduate School

  •  
    -
    2003.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering  Electrical and Computer EngineeringDoctor's Course  Completed

  •  
    -
    2000.03

    Nagoya Institute of Technology  Graduate School, Division of Engineering  Electrical and Computer EngineeringMaster's Course  Completed

Degree

  • Nagoya Institute of Technology -  Doctor (Engineering)

External Career

  • 2010.08
    -
    2010.09

      Researcher  

  • 2009.08
    -
    2009.10

    Vilnius University   Researcher  

  • 2008.08
    -
    2008.10

    Vilnius University   Researcher  

Academic Society Affiliations

  • 2005.01
    -
    2010.12

    IEEE

  • 2000.04
    -
    Now

    The Institute of Electronics, Information and Communication Engineers

  • 2000.04
    -
    2005.12

    Materials Research Society

  • 1998.04
    -
    Now

    The Japan Society of Applied Physics

Field of expertise (Grants-in-aid for Scientific Research classification)

  • Electronic materials/Electric materials

  • Device related chemistry

 

Papers

  • Depth Distribution of Defects in SiC PiN Diodes FormedUsing Ion Implantation or Epitaxial Growth

    Shuhei Fukaya,Yoshiyuki Yonezawa,Tomohisa Kato,Masashi Kato

    Physica Status Solidi B ( Wiley-VCH GmbH )    2100419-1 - 2100419-6   2021.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Deep levels related to the carbon antisite-vacancy pair in 4H-SiC

    Hiroki Nakane, Masashi Kato, Yutaro Ohkouchi, Xuan Thang Trinh, Ivan G. Ivanov, Takeshi Ohshima, Nguyen Tien Son

    Journal of Applied Physics   130   065703   2021.08  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Durable and efficient photoelectrochemical water splitting using TiO2 and 3C–SiC single crystals in a tandem structure

    Endong Zhang, Zhenhang Liu, Masashi Kato

    Solar Energy Materials and Solar Cells   230 ( 15 ) 111260   2021.06  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Carrier recombination in SrTiO3 single crystals: impacts of crystal faces and Nb doping

    Masashi Kato, Takaya Ozawa, Yoshihito Ichikawa

    Journal of Physics D: Applied Physics ( IOP Science )  54 ( 34 ) 345106   2021.06  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Flexible Photocatalytic Electrode Using Graphene, Non-noble Metal, and Organic Semiconductors for Hydrogen Evolution Reaction

    Kohei Kondo, Yusuke Watanabe, Junya Kuno, Yosuke Ishii, Shinji Kawasaki, Masashi Kato, Golap Kalita, Yoshiyuki Hattori, Oleksandr Mashkov, Mykhailo Sytnyk, Wolfgang Heiss

    Energy Technology   9 ( 8 ) 2100123   2021.05  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Contribution of the carbon-originated hole trap to slow decays of photoluminescence and photoconductivity in homoepitaxial n-type GaN layers

    Masashi Kato, Takato Asada, Takuto Maeda, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi

    Journal of Applied Physics   129 ( 11 ) 115701   2021.03  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Nondestructive measurements of depth distribution of carrier lifetimes in 4H-SiC thick epitaxial layers using time-resolved free carrier absorption with intersectional lights

    Takashi Hirayama, Keisuke Nagaya, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato

    Review of Scientific Instruments ( AIP Publishing LLC )  91 ( 12 ) 123902   2020.12  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy

    Yongzhao Yao, Yoshihiro Sugawara, Daisaku Yokoe, Koji Sato, Yukari Ishikawa, Narihito Okada, Kazuyuki Tadatomo, Masaki Sudo, Masashi Kato, Makoto Miyoshi, Takashi Egawa

    CrystEngComm ( Royal Society of Chemistry )  22   8299 - 8312   2020.10  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Observation of carrier lifetime distribution in 4H-SiC thick epilayers using microscopic time-resolved free carrier absorption system

    K. Nagaya, T. Hirayama, T. Tawara, K. Murata, H. Tsuchida, A. Miyasaka, K. Kojima, T. Kato, H. Okumura, M. Kato

    Journal of Applied Physics   128   105702-1 - 105702-7   2020.09  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

  • Mapping of large structural defects in SiC Schottky contacts using internal photoemission microscopy

    Kenji Shiojima, Masashi Kato

    Materials Science in Semiconductor Processing   118   105182-1 - 105182-12   2020.05  [Refereed]

    Research paper (scientific journal)   Multiple Authorship

display all >>

Presentations

  • [D-4-07] Effects of the ion implantation process on carrier lifetimes in 4H-SiC SJ-MOSFET

    Takuya Fukui, Takeshi Tawara, Masashi Kato

    2021 International Conference on Solid State Devices and Materials  (online)  2021.09  -  2021.09  The Japan Society of Applied Physics.

  • [F-2-04] Estimation of surface recombination velocities of SrTiO3 for optimum structures as a photocatalyst

    Masashi Kato, Takaya Ozawa, Yoshihito Ichikawa

    2021 International Conference on Solid State Devices and Materials  (online)  2021.09  -  2021.09  The Japan Society of Applied Physics.

  • [H2.4] Effects of crystalline defects on degradation of SiC devices

    Masashi Kato

    EVTeC 2021  (Virtual)  2021.05  -  2021.05  JSAE

  • [P23] Mapping Of Schottky Contacts On P-4H-SiC Wafers Using Scanning Internal Photoemission Microscopy

    Kenji Shiojima, Masashi Kato

    Compound Semiconductor Week 2021  (online)  2021.05  -  2021.05 

  • D4-12-O03 Difference in carrier lifetimes for SiC measured by microwave photoconductivity decay and time-resolved photoluminescence methods

    Masashi KATO

    MATERIALS RESEARCH MEETING 2019  (YOKOHAMA SYMPOSIA)  2019.12  -  2019.12 

  • D4-11-I08 Carrier Recombination Velocity in 4H-SiC: at Surfaces and Defects

    Masashi KATO  [Invited]

    MATERIALS RESEARCH MEETING 2019  (YOKOHAMA SYMPOSIA)  2019.12  -  2019.12 

  • WP2-9 Mapping of Large Structural Defects in SiC Schottky Contacts Using Internal Photoemission Microscopy

    Kenji Shiojima, Masashi Kato

    8th International Symposium on Control of Semiconductor Interfaces  (Sendai)  2019.11  -  2019.11 

  • [Fr-1B-03] High Performance 3C-SiC Photocathode with Texture Structure Formed by Electrochemical Etching

    Masashi Kato, Tomohiro Ambe

    ICSCRM2019  (Kyoto ICC)  2019.09  -  2019.10  ICSCRM2019 Organizing Committee

  • [Fr-3B-05LN] Microscopic FCA system for carrier lifetime measurement in SiC with high spatial resolution

    Keisuke Nagaya, Takashi Hirayama, Takeshi Tawara, Koichi Murata, Hidekazu Tsuchida, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato

    ICSCRM2019  (Kyoto ICC)  2019.09  -  2019.10  ICSCRM2019 Organizing Committee

  • [Th-P-51LN] Nondestructive depth distribution measurements of carrier lifetime in 4H-SiC thick epitaxial layers with high spatial resolution

    akashi Hirayama, Keisuke Nagaya, Akira Miyasaka, Kazutoshi Kojima, Tomohisa Kato, Hajime Okumura, Masashi Kato

    ICSCRM2019  (Kyoto ICC)  2019.09  -  2019.10  ICSCRM2019 Organizing Committee

display all >>

 
 

Academic Activity

  • 2018.04
    -
    2019.03

    The Japan Society of Applied Physics  

  • 2017.04
    -
    Now

    The Japan Society of Applied Physics  

  • 2016.12
    -
    2017.11

    The Japan Society of Applied Physics  

  • 2016.04
    -
    2020.03

    The Japan Society of Applied Physics  

  • 2014.01
    -
    2014.12

    The Japan Society of Applied Physics  

  • 2013.12
    -
    2014.11

    The Japan Society of Applied Physics  

  • 2012.11
    -
    2013.10

    The Japan Society of Applied Physics  

  • 2011.12
    -
    2014.12

    The Japan Society of Applied Physics  

  • 2010.12
    -
    2011.11

    The Japan Society of Applied Physics