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Affiliation Department etc. |
Department of Electrical and Mechanical Engineering
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Title |
Associate Professor |
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Research Fields, Keywords |
Semiconductor physics |
KATO Masashi
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Graduating School
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-1998.03
Nagoya Institute of Technology Faculty of Engineering Electrical and Computer Engineering Graduated
Graduate School
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-2003.03
Nagoya Institute of Technology Graduate School, Division of Engineering Electrical and Computer EngineeringDoctor's Course Completed
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-2000.03
Nagoya Institute of Technology Graduate School, Division of Engineering Electrical and Computer EngineeringMaster's Course Completed
External Career
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2010.08-2010.09
Researcher
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2009.08-2009.10
Vilnius University Researcher
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2008.08-2008.10
Vilnius University Researcher
Academic Society Affiliations
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2005.01-2010.12
IEEE
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2000.04-Now
The Institute of Electronics, Information and Communication Engineers
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2000.04-2005.12
Materials Research Society
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1998.04-Now
The Japan Society of Applied Physics
Field of expertise (Grants-in-aid for Scientific Research classification)
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Electronic materials/Electric materials
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Device related chemistry
Papers
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Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC
Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, and Tsunenobu Kimoto
Journal of Applied Physics 124 ( 9 ) 095702 2018.09 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Passivation of surface recombination at the Si-face of 4H-SiC by acidic solutions
Yoshihito Ichikawa, Masaya Ichimura, Tsunenobu Kimoto, Masashi Kato
the ECS Journal of Solid State Science and Technology 7 ( 8 ) Q127 - Q130 2018.06 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Expansion of a single Shockley stacking fault in a 4H-SiC (1120) epitaxial layer caused by electron beam irradiation
Yukari Ishikawa, Masaki Sudo, Yong-Zhao Yao, Yoshihiro Sugawara, Masashi Kato
JOURNAL OF APPLIED PHYSICS 123 225101-1 - 225101-6 2018.06 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation
Masaki Sudo, Yukari Ishikawa, Yong Zhao Yao, Yoshihiro Sugawara, Masashi Kato
Materials Science Forum 924 151 - 154 2018.06 [Refereed]
Research paper (international conference proceedings) Multiple Authorship
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Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC
Shinichi Mae, Takeshi Tawara, Hidekazu Tsuchida, Masashi Kato
Materials Science Forum 924 269 - 272 2018.06 [Refereed]
Research paper (international conference proceedings) Multiple Authorship
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Increased expression level of Hsp70 in the inner ears of mice by exposure to low frequency noise
Hiromasa Ninomiya, Nobutaka Ohgami, Reina Oshino, Masashi Kato, Kyoko Ohgami, Xiang Li, Dandan Shen, Machiko Iida, Ichiro Yajima, Charalampos E. Angelidis, Hiroaki Adachi, Masahisa Katsuno, Gen Sobue, Masashi Kato
Hearing Research 363 49 - 54 2018.06 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Observations of Inhomogeneity of 3C-SiC Layers Grown on 6H-SiC Substrates Using Scanning Internal Photoemission Microscopy
Kenji Shiojima, Naoki Mishina, Naoto Ichikawa, Masashi Kato
Japanese Journal of Applied Physics 57 04FR06 2018.02 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Solar Water Splitting Utilizing a SiC Photocathode, a BiVO4 Photoanode, and a Perovskite Solar Cell
Akihide Iwase, Akihiko Kudo, Youhei Numata, Masashi Ikegami, Tsutomu Miyasaka, Naoto Ichikawa, Masashi Kato, Hideki Hashimoto, Haruo Inoue, Osamu Ishitani, Hitoshi Tamiaki
ChemSusChem 10 ( 22 ) 4420 - 4423 2017.11 [Refereed]
Research paper (scientific journal) Multiple Authorship
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P-Type 3C-SiC Photocathode for Solar to Hydrogen Energy Conversion
Masashi Kato
ECS Transactions 80 ( 4 ) 43 - 55 2017.09 [Refereed] [Invited]
Research paper (international conference proceedings) Single Author
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Improved performance of 3Csingle bondSiC photocathodes by using a pn junction
Naoto Ichikawa, Masaya Ichimura, Masashi Kato
International Journal of Hydrogen Energy 42 ( 36 ) 22698 - 22703 2017.09 [Refereed]
Research paper (scientific journal) Multiple Authorship
Presentations
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MO.04.01 Modeling Physical Properties of Single Shockley-type Stacking Fault in 4H-SiC PiN Diode
K. Nakayama, T. Kimoto, M. Kato, Y. Yonezawa, H. Okumura
European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) (The International Conference Centre, Birmingham, UK) 2018.09 - 2018.09
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TH.03.03 Surface recombination velocity for non-polar faces of 4H-SiC
M. Kato, X. Zhang, K. Kohama, M. Ichimura
European Conference on Silicon Carbide and Related Materials (ECSCR 2018) (The International Conference Centre, Birmingham, UK) 2018.09 - 2018.09
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Carrier lifetime measurements for power semiconductor materials
Masashi Kato [Invited]
the Collaborative Conference on Materials Research (CCMR) 2018 (Songdo Convensia, Korea) 2018.06 - 2018.06
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7C-3.4 Slow carrier recombination in a GaN epilayer grown on a GaN substrate
Takato Asada, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi, Masashi Kato
The 19th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XIX) (Nara Kasugano International Forum 甍 IRAKA) 2018.06 - 2018.06
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P-Type 3C-SiC Photocathode for Solar to Hydrogen Energy Conversion
Masashi Kato [Invited]
232nd ECS MEETING (National Harbor, MD) 2017.10 - 2017.10 THE ELECTROCHEMICAL SOCIETY.
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Correlation Between Carrier Lifetime and Photolytic Performance of Nb-Doped TiO2 Single Crystals
T. Ozawa, H. Najima, M. Ichimura, M. Kato
232nd ECS MEETING (National Harbor, MD) 2017.10 - 2017.10 THE ELECTROCHEMICAL SOCIETY.
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Observations of Inhomogeneity of 3C-SiC Layers Grown on 6H-SiC Substrates Using Scanning Internal Photoemission Microscopy
K. Shiojima, N. Mishina, N. Ichikawa, M. Kato
the 2017 International Conference on Solid State Devices and Materials (SSDM2017) (Sendai International Center) 2017.09 - 2017.09
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Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement
Shinichi Mae, Takeshi Tawara, Hidekazu Tsuchida, Masashi Kato
International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) (Washington, D.C.) 2017.09 - 2017.09
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Decay Time of Photoluminescence from 1SSFs and PDs in 4H-SiC
Masashi Kato, Shinya Katahira, Yoshihito Ichikawa, Shunta Harada, Tsunenobu Kimoto
International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) (Washington, D.C.) 2017.09 - 2017.09
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Expansion of Basal Plane Dislocation in 4H-SiC Epitaxial Layer on A-Plane by Electron Beam Irradiation
Masaki Sudo, Yukari Ishikawa, Yongzhao Yao, Yoshihiro Sugawara, Masashi Kato
International Conference on Silicon Carbide and Related Materials (ICSCRM 2017) (Washington, D.C.) 2017.09 - 2017.09
Academic Activity
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2018.04-2019.03
The Japan Society of Applied Physics
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2017.04-Now
The Japan Society of Applied Physics
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2016.12-2017.11
The Japan Society of Applied Physics
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2016.04-2020.03
The Japan Society of Applied Physics
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2014.01-2014.12
The Japan Society of Applied Physics
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2013.12-2014.11
The Japan Society of Applied Physics
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2012.11-2013.10
The Japan Society of Applied Physics
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2011.12-2014.12
The Japan Society of Applied Physics
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2010.12-2011.11
The Japan Society of Applied Physics