KATO Masashi

写真a

Affiliation Department

Department of Electrical and Mechanical Engineering
Department of Electrical and Mechanical Engineering
Center for Research and Development in Higher Engineering-Education

Title

Associate Professor

Homepage

http://ik-lab.web.nitech.ac.jp/

External Link

Degree

  • Doctor (Engineering) ( Nagoya Institute of Technology )

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials  / 半導体材料工学

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment  / 半導体デバイス工学

From School

  • Nagoya Institute of Technology   Faculty of Engineering   Electrical and Computer Engineering   Graduated

    - 1998.03

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    Country:Japan

From Graduate School

  • Nagoya Institute of Technology   Graduate School, Division of Engineering   Electrical and Computer Engineering   Doctor's Course   Completed

    - 2003.03

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    Country:Japan

  • Nagoya Institute of Technology   Graduate School, Division of Engineering   Electrical and Computer Engineering   Master's Course   Completed

    - 2000.03

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    Country:Japan

External Career

  • Vilnius University   Researcher

    2009.08 - 2009.10

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    Country:Lithuania

  • Vilnius University   Researcher

    2008.08 - 2008.10

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    Country:Lithuania

  • ヴィリニュス大学   研究員

    2010.08 - 2010.09

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    Country:Lithuania

  • Nagoya University

    2016.07 - 2021.03

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    Country:Japan

Professional Memberships

  • 第 18 回結晶成長国際会議(ICCGE-18)実行委員会(現地実行委員)

    2014.09 - 2016.08

  • 文部科学省科学技術政策研究所科学技術動向研究センター専門調査員

    2014.02 - 2020.03

  • 自動車技術会

    2013.01

  • GV(グリーンビークル)マテリアルイノベーションの戦略マップ策定・ロードマップ作成およびそれらの「見える化」

    2010.09 - 2011.01

  • IEEE

    2005.01 - 2010.12

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Research Career

  • 単結晶半導体を利用した人工光合成技術開発

    (not selected)  

    Project Year: 2010.04

  • アナログ集積回路による低消費電力、高速信号処理

    (not selected)  

    Project Year: 2003.03 - 2017.03

  • 電気化学法による半導体の加工

    (not selected)  

    Project Year: 2000.03

  • ワイドギャップ半導体の電気的評価と評価技術の開発

    (not selected)  

    Project Year: 1997.04

Papers

  • Vascular endothelium as a target tissue for short-term exposure to low-frequency noise that increases cutaneous blood flow Reviewed International journal

    Yuqi Deng, Nobutaka Ohgami, Takumi Kagawa, Fitri Kurniasari, Dijie Chen, Masashi Kato, Akira Tazaki, Masayo Aoki, Hiroki Katsuta, Keming Tong, Yishuo Gu, Masashi Kato

    Science of The Total Environment   851 ( 1 )   158828   2022.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.scitotenv.2022.158828

    DOI: 10.1016/j.scitotenv.2022.158828

  • Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation Reviewed International journal

    Masashi Kato, Ohga Watanabe, Toshiki Mii, Hitoshi Sakane, Shunta Harada

    Scientific Reports   12   18790   2022.11

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-022-23691-y

    DOI: 10.1038/s41598-022-23691-y

    Other Link: https://www.nature.com/articles/s41598-022-23691-y

  • Trapping effects and surface/interface recombination of carrier recombination in single- or poly-crystalline metal halide perovskites Reviewed International coauthorship International journal

    Ntumba Lobo, Takuya Kawane, Gebhard Matt, Andres Osvet, Shreetu Shrestha, Levchuk Ievgen, Christoph Brabec, Andrii Kanak, Petro Fochuk, Masashi Kato

    2022.11

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/aca05b

    DOI: 10.35848/1347-4065/aca05b

  • Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation Reviewed International journal

    Toshiki Mii, Hitoshi Sakane, Shunta Harada, Masashi Kato

    Materials Science in Semiconductor Processing   153   107126-1 - 107126-5   2022.09

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mssp.2022.107126

  • Metal Organic Frameworks as Synthetic Precursors for SILAR: A Tale of Two Oxides Reviewed International coauthorship International journal

    Noseung Myung, Kongshik Rho, Eun Bee Shon, Tae Wan Park, Soo Yeon Kim, Masashi Kato, Krishnan Rajeshwar

    ECS Journal of Solid State Science and Technology   11   093007   2022.09

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1149/2162-8777/ac8fb3

  • Estimation of surface recombination velocities and bulk carrier lifetime for SrTiO3 using angle-lapped structures Reviewed International journal

    Masashi Kato, Yosuke Kato

    Chemical Physics Letters   805   139955-1 - 139955-3   2022.08

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: https://doi.org/10.1016/j.cplett.2022.139955

  • Suppression of stacking fault expansion in a 4H-SiC epitaxial layer by proton irradiation Reviewed International journal

    Shunta Harada, Toshiki Mii, Hitoshi Sakane, Masashi Kato

    Scientific Reports   12   13542   2022.08

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-022-17060-y

  • Relationship of carbon concentration and slow decays of photoluminescence in homoepitaxial n-type GaN layers Reviewed International journal

    Masashi Kato, Takuto Maeda, Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita, Tetsu Kachi

    Japanese Journal of Applied Physics   61   078004-1 - 078004-4   2022.07

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ac79ec

  • Hole capture cross section of the Al acceptor level in 4H-SiC Reviewed International journal

    Masashi Kato, Jing Di, Yutaro Ohkouchi, Taisuke Mizuno, Masaya Ichimura, Kazutoshi Kojima

    Materials Today Communications   31   103648-1 - 103648-3   2022.05

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    Authorship:Lead author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.mtcomm.2022.103648

  • Characterization of Defect Structure in Epilayer Grown on On‑Axis SiC by Synchrotron X‑ray Topography Reviewed International journal

    Kotaro Ishiji, Masashi Kato, Ryuichi Sugie

    Journal of Electronic Materials   51   1541 - 1547   2022.01

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1007/s11664-021-09423-4

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Books and Other Publications

  • 次世代パワー半導体の開発・評価と実用化

    監修者 岩室 憲幸( Role: Contributor ,  第1編 第1章 第3節)

    (株)エヌ・ティー・エス  2022.02 

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    Total pages:414   Responsible for pages:31-38   Language:jpn   Book type:General book, introductory book for general audience

  • 薄膜の評価技術ハンドブック

    加藤 正史( Role: Joint editor ,  第2章第4節第4項 DLTS法)

    株式会社テクノシステム  2013.01 

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    Language:jpn   Book type:Scholarly book

  • SiCパワーデバイスの開発と最新動向 -普及に向けたデバイスプロセスと実装技術-

    加藤正史( Role: Sole author ,  第3章第4節 陽極酸化欠陥抑制法によるn型4H-SiCのショットキーダイオードの整流特性改善)

    S&T出版  2012.10  ( ISBN:978-4-907002-06-0

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    Language:jpn   Book type:Scholarly book

  • SiCパワーデバイス最新技術 =次世代パワーエレクトロニクス=

    加藤 正史( Role: Sole author ,  第12章.SiCへの金属電極の形成方法)

    サイエンス&テクノロジー株式会社  2010.05  ( ISBN:9784903413846

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    Language:jpn   Book type:Scholarly book

Misc

  • パワーデバイス材料SiC の表面再結合速度を数値化

    加藤 正史

    55 ( 9 )   699 - 699   2020.09

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    Authorship:Lead author   Language:Japanese   Publishing type:Book review, literature introduction, etc.  

    Other Link: http://www.ceramic.or.jp/ihensyub/topics/topics2020.9.pdf

  • 高耐性セラミックスSiCの新たな応用可能性:人工光合成 Invited

    加藤 正史

    54 ( 1 )   36 - 39   2019.01

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)   Publisher:日本セラミックス協会  

  • 人はなぜ研究者を続けることができるか

    加藤 正史

    86 ( 6 )   505 - 506   2017.06

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    Authorship:Lead author   Language:Japanese  

  • SiC光陰極による人工光合成

    加藤 正史

    62 ( 1 )   19 - 23   2017.01

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Publisher:化学工業社  

  • 半導体を用いた水素生成技術

    加藤 正史

    85 ( 2 )   100 - 104   2016.02

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (international conference proceedings)   Publisher:公益社団法人 応用物理学会  

  • ハウリングを高速応答のアナログ回路で除去

    加藤正史、久保真奈美、谷口淳紀、ナラサンビ アヌスヤ

    65 - 71   2014.10

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Publisher:日経BP社  

  • 世界初!「SiCと水から水素を製造!」

    加藤正史

    ( 2月 )   64 - 66   2014.02

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Publisher:技術情報協会  

  • シリコンカーバイドの太陽光吸収を利用した水素生成

    加藤 正史

    58 ( 10 )   7 - 11   2013.10

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    Authorship:Lead author   Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (trade magazine, newspaper, online media)   Publisher:化学工業社  

Presentations

  • Excitation dependence of surface recombination velocities for oxidized 4H-SiC

    2022.12 

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    Event date: 2022.12

    Language:Japanese   Presentation type:Poster presentation  

  • Angular detection for channeling ion implantation by optical techniques

    2022.12 

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    Event date: 2022.12

    Language:Japanese   Presentation type:Poster presentation  

  • Suppression of bipolar degradation by H+ injection into SiC PiN diodes

    2022.12 

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    Event date: 2022.12

    Language:Japanese   Presentation type:Poster presentation  

  • Difference in PL signals for GaN epilayers on HVPE and OVPE substrates

    2022.12 

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    Event date: 2022.12

    Language:Japanese   Presentation type:Poster presentation  

  • 3D observation of dislocation SiC using a focused polarized laser

    2022.12 

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    Event date: 2022.12

    Language:Japanese   Presentation type:Poster presentation  

  • OTC-06 Observation of carrier lifetimes inside of SiC epilayers and devices Invited International conference

    Masashi Kato

    The 10th Asia-Pacific Workshop on Widegap Semiconductors  2022.11 

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    Event date: 2022.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:COZZI Blu, Taoyuan, Taiwan   Country:Taiwan, Province of China  

  • [J-5-03] Auger recombination coefficient in 4H-SiC under the high injection condition International conference

    Kazuhiro TANAKA, Keisuke NAGAYA , Masashi KATO

    2022 International Conference on Solid State Devices and Materials  2022.09 

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    Event date: 2022.09

    Language:English   Presentation type:Oral presentation (general)  

  • [C-4-03] Accurate estimation of surface recombination velocities for SrTiO3 using angle-lapped structures International conference

    Masashi Kato, Yosuke Kato

    2022 International Conference on Solid State Devices and Materials  2022.09 

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    Event date: 2022.09

    Language:English   Presentation type:Oral presentation (general)  

  • 20p-C306-6 酸化処理を施した4H-SiCの表面再結合速度

    小川 斐士, 韓 磊, 加藤 智久, 加藤 正史

    2022年 第83回応用物理学会秋春季学術講演会  2022.09 

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    Event date: 2022.09

    Language:Japanese   Presentation type:Oral presentation (general)  

  • 20p-C306-5 H+注入によるSiC PiNダイオード内積層欠陥拡張の抑制

    渡邉 王雅, 三井 俊樹, 原田 俊太, 坂根 仁, 加藤 正史

    2022年 第83回応用物理学会秋春季学術講演会  2022.09 

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    Event date: 2022.09

    Language:Japanese   Presentation type:Oral presentation (general)  

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Industrial Property Rights

  • 前庭刺激装置、めまい治療装置、健康促進装置

    加藤 昌志、大神 信孝、曾根 三千彦、杉本 賢文、加藤 正史

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    Application no:特願2018-104637  Date applied:2018.05

    Patent/Registration no:19230941  Date registered:2021.07  Date issued:2021.07

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 高変換効率SiC光電極およびそれを用いた水素製造装置

    加藤正史、市川尚澄

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    Application no:特願2016-033015  Date applied:2016.02

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 高変換効率SiC光電極およびそれを用いた水素製造装置

    加藤 正史,長谷川 貴大,市川 尚澄

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    Application no:特願2015-076647  Date applied:2015.04

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 高変換効率SiC光電極およびそれを用いた水素製造装置

    加藤 正史、長谷川 貴大、市川 尚澄

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    Application no:特願2015-014184  Date applied:2015.01

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 高変換効率SiC光電極

    加藤 正史、長谷川 貴大、市川 尚澄

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    Application no:2014-227634  Date applied:2014.11

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 界面抵抗を低減したSiC光電極およびその製造方法、ならびにSiC光電極を用いた水素製造装置

    加藤 正史, 長谷川 貴大

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    Application no:2014-015515  Date applied:2014.01

    Country of applicant:Domestic   Country of acquisition:Domestic

  • 半導体キャリアライフタイム測定方法

    加藤 正史,森 祐人

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    Application no:2013-165683  Date applied:2013.08

    Country of applicant:Domestic   Country of acquisition:Domestic

  • ハウリング低減システム及びそれに用いられるアナログ電子回路

    加藤正史、久保真奈美

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    Application no:特願2013-051477  Date applied:2013.03

    Country of applicant:Domestic   Country of acquisition:Domestic

  • ハウリング低減システム及びそれに用いられるアナログ電子回路

    加藤 正史,久保 真奈美,谷口 淳紀

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    Application no:特願2013-051488  Date applied:2013.03

    Country of applicant:Domestic   Country of acquisition:Domestic

  • ハウリング低減システム及びそれに用いられるアナログ電子回路

    加藤正史、久保真奈美、谷口 淳紀

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    Application no:特願2013-051469  Date applied:2013.03

    Country of applicant:Domestic   Country of acquisition:Domestic

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Awards

  • 永井技術賞

    2021.03   永井科学技術財団   SiC単結晶内の電気伝導キャリアの評価および制御技術開発

    加藤正史

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

  • Japanese Journal of Applied Physics: 2020 Reviewer Awards

    2021   IOP Publishing  

    Masashi Kato

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    Award type:Honored in official journal of a scientific society, scientific journal  Country:Japan

  • the Award for Encouragement of Research in IUMRS-ICA2014

    2014.10   MRS-J  

    Masashi Kato

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    Award type:Award from international society, conference, symposium, etc.  Country:Japan

  • 文部科学大臣表彰科学技術賞(理解増進部門)

    2014.04   文部科学省  

    平田晃正、丸田章博、加藤正史、江龍修

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    Country:Japan

  • 安藤博記念学術奨励賞

    2010.06   財団法人安藤研究所  

    加藤正史

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

  • 電子情報通信学会学生研究奨励賞

    2003.06   -  

    -

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    Country:Japan

  • Best Paper Award

    2003.02   The Indian Science Congress Association, Chennai Chapter  

    Masashi Kato, Masaya Ichimura, Eisuke Arai

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    Award type:Award from international society, conference, symposium, etc.  Country:India

 

Committee Memberships

  • 応用物理学会   応用物理学会 2023年国際固体素子・材料コンファレンス実行委員  

    2022.08 - 2022.09   

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    Committee type:Academic society

  • 応用物理学会   先進パワー半導体分科会第9回講演会プログラム委員長  

    2022.01 - 2022.12   

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    Committee type:Academic society

  • 応用物理学会   ISPlasma2019/IC-PLANTS2019プログラム委員  

    2018.04 - 2019.03   

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    Committee type:Academic society

  • 応用物理学会   学術講演会プログラム委員  

    2017.04   

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    Committee type:Academic society

  • 応用物理学会   先進パワー半導体分科会第4回講演会実行委員長  

    2016.12 - 2017.11   

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    Committee type:Academic society

  • 応用物理学会   先進パワー半導体分科会幹事  

    2016.04 - 2020.03   

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    Committee type:Academic society

  • 応用物理学会   先進パワー半導体分科会庶務幹事  

    2014.01 - 2014.12   

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    Committee type:Academic society

  • 応用物理学会   先進パワー半導体分科会第1回講演会実行委員  

    2013.12 - 2014.11   

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    Committee type:Academic society

  • 応用物理学会   ICSCRM2013プログラム委員  

    2012.11 - 2013.10   

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    Committee type:Academic society

  • 応用物理学会   国際固体素子・材料コンファレンス論文委員  

    2011.12 - 2014.12   

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    Committee type:Academic society

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