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Affiliation Department etc. |
Department of Electrical and Mechanical Engineering
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Title |
Associate Professor |
NIRAULA Madan
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Graduate School
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-2000.03
Shizuoka University Graduate School, Division of Electronic Science and Technology Doctor's Course Completed
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-1997.03
Shizuoka University Graduate School, Division of Engineering Master's Course Completed
External Career
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2010.08-2010.09
Brookhaven National Laboratory, USA Department of Nonproliferation and National Security Researcher
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2000.04-2002.03
The Japan Society of Promotion of Science (JSPS) Post-doctoral fellow at Shizuoka University Special researcher of the Japan Society for the Promotion of Science
Field of expertise (Grants-in-aid for Scientific Research classification)
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General applied physics
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Electronic materials/Electric materials
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Applied materials
Research Career
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Development of high-energy resolution nuclear radiation imaging detectors based on cadmium telluride
Collaboration in Organization (not selected)
Project Year： 2003.04 - Now
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Development of high efficiency, large area semiconductor nuclear radiation detectors for medical imaging
Collaboration in Organization (not selected)
Project Year： 2002.04 - Now
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Performance enhancement of semiconductor nuclear radiation detectors
Collaboration in Organization (not selected)
Project Year： 2002.04 - Now
Thesis for a degree
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Development of High-Energy Resolution CdTe Room-Temperature Nuclear Radiation Detectors
Madan Niraula
2000.03 [Refereed]
8 1
Papers
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Dry Etching Characteristics of MOVPE Grown CdTe Epilayers in CH4, H2, Ar ECR Plasmas
K. Yasuda, M. Niraula, N. Araki, M. Miyata, S. Kitagawa, M. Kojima, J. Ozawa, S. Tsubota, T. Yamaguchi, and Y. Agata
Journal of Electronic Materials ( Springer ) 46 ( 9 ) 5400 - 5404 2017.09 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Improving the Performances of CdTe Gamma Ray Detectors by H2/Ar ECR Plasma Processing
M. Niraula, K. Yasuda, S. Kitagawa, M. Kojima, and Y. Agata
IEEE Electron Device Letter 37 ( 8 ) 1059 - 1062 2016.08 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Surface Processing of CdTe Detectors Using Hydrogen Bromide-Based Etching Solution
M. Niraula, K. Yasuda, N. Takai, M. Matsumoto, Y. Suzuki, Y. Tsukamoto, Y. Ito, S. Sugimoto, S. Kouno, D. Yamazaki, and Y. Agata
IEEE Electron Device Letter 36 ( 8 ) 856 - 858 2015.08 [Refereed]
Research paper (scientific journal) Multiple Authorship
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M.Niraula, K. Yasuda, H. Yamashita, Y. Wajima, M. Matsumoto, N. Takai, Y. Tsukamoto, Y. Suzuki, Y. Tsukamoto, Y. Agata
IEEE Trans. Nucl. SCi. 61 ( 5 ) 2555 - 2558 2014.10 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Development of Nuclear Radiation Detectors by Use of Thick Single-Crystal CdTe Layers Grown on (211) p+-Si Substrates by MOVPE
K. Yasuda, M. Niraula, Y. Wajima, H. Yamashita, N. Takai, Y. Suzuki, M. Matsumoto, Yudai. Tsukamoto, Yuki Tsukamoto, and Y. Agata
Journal of Electronic Materials 43 ( 8 ) 2860 - 2863 2014.08 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for x-ray, gamma ray spectroscopic detector development
Madan Niraula, Kazuhito Yasuda, Hayate Yamashita, Yuto Wajima, Yudai Tsukamoto, Masahiko Matsumoto, Yuta Suzuki, Noriaki Takai, Yuki Tsukamoto, and Yasunori Agata,
Phys. Status Solidi c 11 ( 7-8 ) 1333 - 1336 2014.07 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Postgrowth Annealing of CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy
K. Yasuda, M. Niraula, S. Namba, T. Kondo, S. Muramatsu, H. Yamashita, Y. Wajima, and Y. Agata,
Journal of Electronic Materials 42 ( 11 ) 3125 - 3128 2013.11 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Charge transport properties of p-CdTe/n-CdTe/n+-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers
M. Niraula, K. Yasuda, Y. Wajima, H. Yamashita, Y. Tsukamoto, Y. Suzuki, M. Matsumoto, N. Takai, Y. Tsukamoto, and Y. Agata
Journal of Applied Physics 114 ( 16 ) 164510-1 - 164510-5 2013.10 [Refereed]
Research paper (scientific journal) Multiple Authorship
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MOVPE Growth of Thick Single Crystal CdZnTe Epitaxial Layers on Si Substrates for Nuclear Radiation Detector Development
M. Niraula, K. Yasuda, S. Namba, T. Kondo, S. Muramatsu, Y. Wajima, H. Yamashita, and Y. Agata
IEEE Transactions on Nuclear Science 60 ( 4 ) 2859 - 2863 2013.08 [Refereed]
Research paper (scientific journal) Multiple Authorship
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M. Niraula, K. Yasuda, N. Fujimura, T. Tachi, H. Inuzuka, S. Namba, T. Kondo,S. Muramatu, and Y. Agata
IEEE Transactions on Nuclear Science 59 ( 6 ) 3201 - 3204 2012.12 [Refereed]
Research paper (scientific journal) Multiple Authorship
Presentations
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Investigation of growth orientation of CdTe crystals grown on (211)Si layers by MOVPE
The 64th JSAP Spring Meeting 2017.03 - 2017.03 The Japan Society of Applied Physics
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Fabrication of large area imaging array using MOVPE grown CdTe layers on (211) Si Substrates
The 64th JSAP Spring Meeting 2017.03 - 2017.03 The Japan Society of Applied Physics
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Surface Processing of CdTe Crystals in H2 /Ar ECR Plasma
The 64th JSAP Spring Meeting 2017.03 - 2017.03 The Japan Society of Applied Physics
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Surface Processing of CdTe Crystals in H2/Ar Electron Cyclotron Resonance Plasma
M. Niraula, K. Yasuda, 他
IEEE- The 23rd International Symposium on Room-Temperature Semiconductor Detectors (RTSD) (Strasbourg, France) 2016.10 - 2016.11 IEEE Nuclear and Plasma Science Society
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Recent Progress in CdTe/n+-Si Epitaxial Layer Based Heterojunction Diode-Type Gamma Detectors
M. Niraula, K. Yasuda, 他 [Invited]
IEEE- The 23rd International Symposium on Room-Temperature Semiconductor Detectors (RTSD) (Strasbourg, France) 2016.10 - 2016.11 IEEE Nuclear and Plasma Science Society
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Dry Etching Characteristics of MOVPE Grown CdTe Epilayers in CH4, H2, Ar ECR Plasmas
K. Yasuda, M. Niraula,他
The 2016 US Workshop on the Physics and Chemistry of II-VI Materials (Baltimore, USA) 2016.10 - 2016.10 The American Physical Society
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Characterization of (211) and (100) CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy
K. Yasuda, M. Niraula,他
The 2016 US Workshop on the Physics and Chemistry of II-VI Materials (Baltimore, USA) 2016.10 - 2016.10 The American Physical Society
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Photoluminescence of CdTe layers grown on (211) Si substrates by MOVPE
M. Kojima, K. Yasuda, M. Niraula, others
The 77th JSAP Autumn Meeting, 2016 (Nigata) 2016.09 - 2016.09 The Japan Society of Applied Physics
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Etch pit evaluation of (211) CdTe/Si layers grown by MOVPE
2016.03 - 2016.03
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Photo-luminescence of As-doped CdTe layers grown on (211) Si substrates by MOVPE
2016.03 - 2016.03
Academic Awards Received
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The Electrical Science and Engineering Promotion Awards
2012.11.27
Winner： Niraula Madan, Yasuda Kazuhito
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The Spring Meeting of The Japan Society of Applied Physics
2002.04
Academic Activity
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2016.12-Now
The Institute of Electrical and ElectronicsEngineers 2017 Room Temperature Semiconductor Detectors Advisory Committee
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2016.02-2018.01
The Japan Society of Applied Physics
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2015.09-Now
The International Society for Optics and Photonics Program committee
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2008.04-Now
The Japan Society of Applied Physics