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Affiliation Department etc. |
Department of Electrical and Mechanical Engineering
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Title |
Professor |
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Mail Address |
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Research Fields, Keywords |
Electronic Materials, Epitaxial Growth, Radiation Detectors, |
NIRAULA Madan
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Graduate School
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-2000.03
Shizuoka University Graduate School, Division of Electronic Science and Technology Doctor's Course Completed
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-1997.03
Shizuoka University Graduate School, Division of Engineering Master's Course Completed
External Career
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2010.08-2010.09
Brookhaven National Laboratory, USA Department of Nonproliferation and National Security Researcher
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2000.04-2002.03
The Japan Society of Promotion of Science (JSPS) Post-doctoral fellow at Shizuoka University Special researcher of the Japan Society for the Promotion of Science
Field of expertise (Grants-in-aid for Scientific Research classification)
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Electronic materials/Electric materials
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General applied physics
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Applied materials
Research Career
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Development of high-energy resolution nuclear radiation imaging detectors based on cadmium telluride
Collaboration in Organization (not selected)
Project Year： 2003.04 - Now
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Performance enhancement of semiconductor nuclear radiation detectors
Collaboration in Organization (not selected)
Project Year： 2002.04 - Now
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Development of high efficiency, large area semiconductor nuclear radiation detectors for medical imaging
Collaboration in Organization (not selected)
Project Year： 2002.04 - Now
Thesis for a degree
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Development of High-Energy Resolution CdTe Room-Temperature Nuclear Radiation Detectors
Madan Niraula
2000.03 [Refereed]
8 1
Papers
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Synchrotron characterization of high-Z, current-mode x-ray detectors
Quinn Looker, Michael G. Wood, Antonino Miceli, Madan Niraula, Kazuhito Yasuda, and John L. Porter
Review of Scientific Instruments 91 ( 2 ) 023509-1 - 023509-8 2020.02 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Metalorganic Vapor Phase Epitaxy of Thick and Uniform Single Crystal CdTe Epitaxial Layers on (211) Si Substrates for X-ray Imaging Detector Development
M. Niraula, K. Yasuda, R. Torii, R. Tamura, Y. Higashira, and Y. Agata
Journal of Electronic Materials 48 ( 12 ) 7680 - 7685 2019.12 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Characterization of Fine-Pixel X-ray Imaging Detector Array Fabricated by Using Thick Single-Crystal CdTe Layers on Si Substrates Grown by MOVPE
M. Niraula, K. Yasuda, S. Tsubota, T. Yamaguchi, J. Ozawa, T. Mori, and Y. Agata
IEEE Trans. Electron Devices ( The IEEE Electron Devices Society ) 66 ( 1 ) 518 - 523 2019.01 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Reform of laboratory courses to develop students possessing knowledge in both electrical and mechanical engineering
2018 JSEE Annual Conference proceeding ( Japanese Society for Engineering Education ) - ( - ) 294 - 295 2018.08
Research paper (research society, symposium materials, etc.) Multiple Authorship
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Post Growth Annealing of MOVPE-Grown Single Crystal CdTe Epilayers on (211) Si Substrates
M. Niraula, K. Yasuda, J. Ozawa, T. Yamaguchi, S. Tsubota, T. Mori, and Y. Agata
IEEE Transactions on Nuclear Science ( The IEEE Nuclear and Plasma Science Society ) 65 ( 8 ) 2325 - 2328 2018.08 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Development of Large-Area CdTe/n+-Si Epitaxial Layer Based Heterojunction Diode-Type Gamma-Ray Detector Arrays
M. Niraula, K. Yasuda, M. Kojima, S. Kitagawa, S. Tsubota, T. Yamaguchi, J. Ozawa, Y. Agata
IEEE Transactions on Nuclear Science ( IEEE Nuclear and Plasma Science Society ) 65 ( 4 ) 1066 - 1069 2018.04 [Refereed]
Research paper (scientific journal) Multiple Authorship
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K. Yasuda, M. Niraula, M. Kojima, S. Kitagawa, S. Tsubota, T. Yamaguchi, J. Ozawa, and Y. Agata
J. Electronic Materials ( Springer ) 46 ( 11 ) 6704 - 6708 2017.10 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Dry Etching Characteristics of MOVPE Grown CdTe Epilayers in CH4, H2, Ar ECR Plasmas
K. Yasuda, M. Niraula, N. Araki, M. Miyata, S. Kitagawa, M. Kojima, J. Ozawa, S. Tsubota, T. Yamaguchi, and Y. Agata
Journal of Electronic Materials ( Springer ) 46 ( 9 ) 5400 - 5404 2017.09 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Improving the Performances of CdTe Gamma Ray Detectors by H2/Ar ECR Plasma Processing
M. Niraula, K. Yasuda, S. Kitagawa, M. Kojima, and Y. Agata
IEEE Electron Device Letter 37 ( 8 ) 1059 - 1062 2016.08 [Refereed]
Research paper (scientific journal) Multiple Authorship
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Surface Processing of CdTe Detectors Using Hydrogen Bromide-Based Etching Solution
M. Niraula, K. Yasuda, N. Takai, M. Matsumoto, Y. Suzuki, Y. Tsukamoto, Y. Ito, S. Sugimoto, S. Kouno, D. Yamazaki, and Y. Agata
IEEE Electron Device Letter 36 ( 8 ) 856 - 858 2015.08 [Refereed]
Research paper (scientific journal) Multiple Authorship
Presentations
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In-situ annealing of MOVPE grown CdTe layers on Si substrate
S. Fuji, R. Tamura, R. Torii, Y. Higashira, T. Kobayashi, H. Goto, Y. Agata, M. Niraula, K. Yasuda
The 67th JSAP Spring Meeting 2020 2020.03 - 2020.03 JSAP
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Properties of iodine-doped CdTe layers on (211) Si grown at high substrate temperatures by MOVPE
M. Niraula, K. Yasuda, R. Torii, Y. Higashira, R. Tamura, B. S. Chaudhari, T. Kobayashi, H. Goto, S. Fujii, and Y. Agata
The 2019 U.S. Workshop on the Physics and Chemistry of II-VI Materials (Chicago, USA) 2019.11 - 2019.11 American Physical Society
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MOVPE growth of thick n-CdTe layers with high electron density grown on (211)Si substrate [II]
The 66th JSAP Spring Meeting, 2019 2019.03 - 2019.03 The Japan Society of Applied Physics
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MOVPE growth of thick n-CdTe layers with high electron density grown on (211)Si substrate [Ⅰ]
The 66th JSAP Spring Meeting, 2019 2019.03 - 2019.03 The Japan Society of Applied Physics
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MOVPE Growth and Characterization of Iodine-Doped n-CdTe Layers on (211)Si Substrates Grown at High Substrate Temperatures
M. Niraula, K. Yasuda, T. Mori, B. S. Chaudhari, R. Tamura, Y. Higashira, R. Torii, and Y. Agata
IEEE 2018- 25th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors (Sydney, Australia) 2018.11 - 2018.11 IEEE Nuclear and Plasma Science Society
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Advances in the Crystal Growth and Device Fabrication Techniques of Thick CdTe/Si Epitaxial Layers based Nuclear Radiation Detectors
M. Niraula, K. Yasuda, T. Mori, R. Torii, R. Tamura, Y. Higashira, and Y. Agata [Invited]
IEEE 2018- 25th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors, (Sydney, Australia) 2018.11 - 2018.11 IEEE Nuclear and Plasma Science Society
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Study of MOVPE growth to improve thickness uniformity of CdTe epilayers on Si substrate
The 79th JSAP Autumn Meeting, 2018 (Nagoya Congress Center) 2018.09 - 2018.09 JSAP
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Development of X-ray Imaging Sensors Based on Epitaxially Grown Thick CdTe Layers on Si Substrates
M. Niraula, K. Yasuda, S. Tsubota, T. Yamaguchi, J. Ozawa, T. Mori, and Y. Agata
2018年第79回応用物理学会学秋季学術講演会 (名古屋国際会議場) 2018.09 - 2018.09 公益社団法人 応用物理学会
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Reform of laboratory courses to develop students possessing knowledge in both electrical and mechanical engineering
2018 JSEE Annual Conference 2018.08 - 2018.08 JSEE
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Development of Fine-Pixel X-ray Imaging Arrays using CdTe/n+-Si Epitaxial Layers
M. Niraula, K. Yasuda, S. Tsubota, T. Yamaguchi, J. Ozawa, T. Mori, Y. Agata [Invited]
IEEE 2017- 24th International Workshop on Room-Temperature Semiconductor X-and Gamma-Ray Detectors (Atlanta, USA) 2017.10 - 2017.10 IEEE Nuclear and Plasma Science Society
Academic Awards Received
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The Electrical Science and Engineering Promotion Awards
2012.11.27
Winner： Niraula Madan, Yasuda Kazuhito
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The Spring Meeting of The Japan Society of Applied Physics
2002.04
Academic Activity
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2016.12-Now
The Institute of Electrical and ElectronicsEngineers 2017 Room Temperature Semiconductor Detectors Advisory Committee
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2016.02-2018.01
The Japan Society of Applied Physics
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2015.09-Now
The International Society for Optics and Photonics Program committee
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2008.04-Now
The Japan Society of Applied Physics